Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Pennington, NJ
Electrochemical Soc.
1996
|
| Schriftenreihe: | Electrochemical Society: Proceedings
1996,4 |
| Schlagworte: | |
| Beschreibung: | X, 527 S. graph. Darst. |
| ISBN: | 1566771544 |
Internformat
MARC
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| 245 | 1 | 0 | |a Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology |c ed. G. R. Srinivasan ... |
| 246 | 1 | 3 | |a Process physics and modeling in semiconductor technology |
| 264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1996 | |
| 300 | |a X, 527 S. |b graph. Darst. | ||
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| 490 | 1 | |a Electrochemical Society: Proceedings |v 1996,4 | |
| 650 | 7 | |a Cristaux - Simulation par ordinateur |2 ram | |
| 650 | 7 | |a Ions - Implantation - Simulation par ordinateur |2 ram | |
| 650 | 7 | |a Semiconducteurs - Modèles mathématiques |2 ram | |
| 650 | 7 | |a Semiconducteurs - Simulation par ordinateur |2 ram | |
| 650 | 4 | |a Mathematisches Modell | |
| 650 | 4 | |a Crystals |x Defects |x Mathematical models |v Congresses | |
| 650 | 4 | |a Ion implantation |x Mathematical models |v Congresses | |
| 650 | 4 | |a Semiconductors |x Mathematical models |v Congresses | |
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Datensatz im Suchindex
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| author_corporate | International Symposium on Process Physics and Modeling in Semiconductor Technology Los Angeles, Calif |
| author_corporate_role | aut |
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| building | Verbundindex |
| bvnumber | BV012135059 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3200 |
| ctrlnum | (OCoLC)35791959 (OCoLC)889719518 (DE-599)BVBBV012135059 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1996 Los Angeles, Calif. gnd-content |
| genre_facet | Konferenzschrift 1996 Los Angeles, Calif. |
| id | DE-604.BV012135059 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:22:19Z |
| institution | BVB |
| institution_GND | (DE-588)5191199-1 |
| isbn | 1566771544 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008218857 |
| oclc_num | 35791959 889719518 |
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| physical | X, 527 S. graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Electrochemical Soc. |
| record_format | marc |
| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spelling | International Symposium on Process Physics and Modeling in Semiconductor Technology 4 1996 Los Angeles, Calif. Verfasser (DE-588)5191199-1 aut Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. G. R. Srinivasan ... Process physics and modeling in semiconductor technology Pennington, NJ Electrochemical Soc. 1996 X, 527 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1996,4 Cristaux - Simulation par ordinateur ram Ions - Implantation - Simulation par ordinateur ram Semiconducteurs - Modèles mathématiques ram Semiconducteurs - Simulation par ordinateur ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Los Angeles, Calif. gnd-content Halbleitertechnologie (DE-588)4158814-9 s DE-604 Srinivasan, G. R. Sonstige oth Electrochemical Society: Proceedings 1996,4 (DE-604)BV001900941 1996,4 |
| spellingShingle | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology Electrochemical Society: Proceedings Cristaux - Simulation par ordinateur ram Ions - Implantation - Simulation par ordinateur ram Semiconducteurs - Modèles mathématiques ram Semiconducteurs - Simulation par ordinateur ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)1071861417 |
| title | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology |
| title_alt | Process physics and modeling in semiconductor technology |
| title_auth | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology |
| title_exact_search | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology |
| title_full | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. G. R. Srinivasan ... |
| title_fullStr | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. G. R. Srinivasan ... |
| title_full_unstemmed | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology ed. G. R. Srinivasan ... |
| title_short | Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology |
| title_sort | proceedings of the fourth international symposium on process physics and modeling in semiconductor technology |
| topic | Cristaux - Simulation par ordinateur ram Ions - Implantation - Simulation par ordinateur ram Semiconducteurs - Modèles mathématiques ram Semiconducteurs - Simulation par ordinateur ram Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Cristaux - Simulation par ordinateur Ions - Implantation - Simulation par ordinateur Semiconducteurs - Modèles mathématiques Semiconducteurs - Simulation par ordinateur Mathematisches Modell Crystals Defects Mathematical models Congresses Ion implantation Mathematical models Congresses Semiconductors Mathematical models Congresses Halbleitertechnologie Konferenzschrift 1996 Los Angeles, Calif. |
| volume_link | (DE-604)BV001900941 |
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