Nitride semiconductors 1997: proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
1998
|
| Schriftenreihe: | Journal of crystal growth
189/190 |
| Schlagworte: | |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-Bd. |
| Beschreibung: | XX, 866 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV012048281 | ||
| 003 | DE-604 | ||
| 005 | 20200716 | ||
| 007 | t | ||
| 008 | 980709s1998 ad|| |||| 10||| eng d | ||
| 035 | |a (OCoLC)39790260 | ||
| 035 | |a (DE-599)BVBBV012048281 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-355 |a DE-706 | ||
| 050 | 0 | |a QD921.A1 | |
| 245 | 1 | 0 | |a Nitride semiconductors 1997 |b proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |c ed. by: K. Hiramatsu ... |
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 1998 | |
| 300 | |a XX, 866 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Journal of crystal growth |v 189/190 | |
| 500 | |a Einzelaufnahme eines Zeitschr.-Bd. | ||
| 650 | 7 | |a Nitrures - Congrès |2 ram | |
| 650 | 7 | |a Semiconducteurs - Congrès |2 ram | |
| 650 | 7 | |a Semiconducteurs à large bande interdite - Congrès |2 ram | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Stickstoffverbindungen |0 (DE-588)4183288-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Nanostruktur |0 (DE-588)4204530-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Stickstoffverbindungen |0 (DE-588)4183288-7 |D s |
| 689 | 0 | 1 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 2 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 0 | 3 | |a Nanostruktur |0 (DE-588)4204530-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Hiramatsu, Kazumasa |4 edt | |
| 711 | 2 | |a International Conference on Nitride Semiconductors |n 2 |d 1997 |c Tokushima |j Sonstige |0 (DE-588)5287966-5 |4 oth | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008154811 | ||
Datensatz im Suchindex
| _version_ | 1804126645797257216 |
|---|---|
| any_adam_object | |
| author2 | Hiramatsu, Kazumasa |
| author2_role | edt |
| author2_variant | k h kh |
| author_facet | Hiramatsu, Kazumasa |
| building | Verbundindex |
| bvnumber | BV012048281 |
| callnumber-first | Q - Science |
| callnumber-label | QD921 |
| callnumber-raw | QD921.A1 |
| callnumber-search | QD921.A1 |
| callnumber-sort | QD 3921 A1 |
| callnumber-subject | QD - Chemistry |
| ctrlnum | (OCoLC)39790260 (DE-599)BVBBV012048281 |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01781nam a2200445 cb4500</leader><controlfield tag="001">BV012048281</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20200716 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">980709s1998 ad|| |||| 10||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)39790260</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012048281</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD921.A1</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Nitride semiconductors 1997</subfield><subfield code="b">proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997</subfield><subfield code="c">ed. by: K. Hiramatsu ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam [u.a.]</subfield><subfield code="b">Elsevier</subfield><subfield code="c">1998</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XX, 866 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Journal of crystal growth</subfield><subfield code="v">189/190</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Einzelaufnahme eines Zeitschr.-Bd.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrures - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs à large bande interdite - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Stickstoffverbindungen</subfield><subfield code="0">(DE-588)4183288-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Stickstoffverbindungen</subfield><subfield code="0">(DE-588)4183288-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Nanostruktur</subfield><subfield code="0">(DE-588)4204530-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hiramatsu, Kazumasa</subfield><subfield code="4">edt</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference on Nitride Semiconductors</subfield><subfield code="n">2</subfield><subfield code="d">1997</subfield><subfield code="c">Tokushima</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5287966-5</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008154811</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV012048281 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:20:45Z |
| institution | BVB |
| institution_GND | (DE-588)5287966-5 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008154811 |
| oclc_num | 39790260 |
| open_access_boolean | |
| owner | DE-703 DE-355 DE-BY-UBR DE-706 |
| owner_facet | DE-703 DE-355 DE-BY-UBR DE-706 |
| physical | XX, 866 S. Ill., graph. Darst. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Elsevier |
| record_format | marc |
| series2 | Journal of crystal growth |
| spelling | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... Amsterdam [u.a.] Elsevier 1998 XX, 866 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Journal of crystal growth 189/190 Einzelaufnahme eines Zeitschr.-Bd. Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd rswk-swf Stickstoffverbindungen (DE-588)4183288-7 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Stickstoffverbindungen (DE-588)4183288-7 s Halbleiter (DE-588)4022993-2 s Kristallwachstum (DE-588)4123579-4 s Nanostruktur (DE-588)4204530-7 s DE-604 Hiramatsu, Kazumasa edt International Conference on Nitride Semiconductors 2 1997 Tokushima Sonstige (DE-588)5287966-5 oth |
| spellingShingle | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Nanostruktur (DE-588)4204530-7 gnd Kristallwachstum (DE-588)4123579-4 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4183288-7 (DE-588)4204530-7 (DE-588)4123579-4 (DE-588)1071861417 |
| title | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
| title_auth | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
| title_exact_search | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
| title_full | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
| title_fullStr | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
| title_full_unstemmed | Nitride semiconductors 1997 proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 ed. by: K. Hiramatsu ... |
| title_short | Nitride semiconductors 1997 |
| title_sort | nitride semiconductors 1997 proceedings of the second international conference on nitride semiconductors tokushima japan october 27 31 1997 |
| title_sub | proceedings of the second International Conference on Nitride Semiconductors, Tokushima, Japan, October 27 - 31, 1997 |
| topic | Nitrures - Congrès ram Semiconducteurs - Congrès ram Semiconducteurs à large bande interdite - Congrès ram Halbleiter (DE-588)4022993-2 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Nanostruktur (DE-588)4204530-7 gnd Kristallwachstum (DE-588)4123579-4 gnd |
| topic_facet | Nitrures - Congrès Semiconducteurs - Congrès Semiconducteurs à large bande interdite - Congrès Halbleiter Stickstoffverbindungen Nanostruktur Kristallwachstum Konferenzschrift |
| work_keys_str_mv | AT hiramatsukazumasa nitridesemiconductors1997proceedingsofthesecondinternationalconferenceonnitridesemiconductorstokushimajapanoctober27311997 AT internationalconferenceonnitridesemiconductorstokushima nitridesemiconductors1997proceedingsofthesecondinternationalconferenceonnitridesemiconductorstokushimajapanoctober27311997 |