Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Helsinki
Finnish Acad. of Technology
1997
|
| Schriftenreihe: | Acta polytechnica Scandinavica / Applied physics series
213 |
| Schlagworte: | |
| Beschreibung: | Zugl.: Helsinki, Univ., Diss., 1997 |
| Beschreibung: | 29 S. graph. Darst. |
| ISBN: | 9525148238 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV012002716 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 980615s1997 d||| m||| 00||| eng d | ||
| 020 | |a 9525148238 |9 952-5148-23-8 | ||
| 035 | |a (OCoLC)42701504 | ||
| 035 | |a (DE-599)BVBBV012002716 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-355 |a DE-83 | ||
| 082 | 0 | |a 537.622 6 |2 21 | |
| 100 | 1 | |a Väkeväinen, Kyösti |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |c Kyösti Väkeväinen |
| 264 | 1 | |a Helsinki |b Finnish Acad. of Technology |c 1997 | |
| 300 | |a 29 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Acta polytechnica Scandinavica / Applied physics series |v 213 | |
| 500 | |a Zugl.: Helsinki, Univ., Diss., 1997 | ||
| 650 | 7 | |a Dissipation d'énergie |2 ram | |
| 650 | 7 | |a Faisceaux ioniques |2 ram | |
| 650 | 7 | |a Interactions ion-ion |2 ram | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 810 | 2 | |a Applied physics series |t Acta polytechnica Scandinavica |v 213 |w (DE-604)BV023821053 |9 213 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-008121919 | ||
Datensatz im Suchindex
| _version_ | 1804126597304811520 |
|---|---|
| any_adam_object | |
| author | Väkeväinen, Kyösti |
| author_facet | Väkeväinen, Kyösti |
| author_role | aut |
| author_sort | Väkeväinen, Kyösti |
| author_variant | k v kv |
| building | Verbundindex |
| bvnumber | BV012002716 |
| ctrlnum | (OCoLC)42701504 (DE-599)BVBBV012002716 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 6 |
| dewey-search | 537.622 6 |
| dewey-sort | 3537.622 16 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01280nam a2200361 cb4500</leader><controlfield tag="001">BV012002716</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">980615s1997 d||| m||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9525148238</subfield><subfield code="9">952-5148-23-8</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)42701504</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV012002716</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.622 6</subfield><subfield code="2">21</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Väkeväinen, Kyösti</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques</subfield><subfield code="c">Kyösti Väkeväinen</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Helsinki</subfield><subfield code="b">Finnish Acad. of Technology</subfield><subfield code="c">1997</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">29 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Acta polytechnica Scandinavica / Applied physics series</subfield><subfield code="v">213</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Zugl.: Helsinki, Univ., Diss., 1997</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Dissipation d'énergie</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Faisceaux ioniques</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Interactions ion-ion</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="810" ind1="2" ind2=" "><subfield code="a">Applied physics series</subfield><subfield code="t">Acta polytechnica Scandinavica</subfield><subfield code="v">213</subfield><subfield code="w">(DE-604)BV023821053</subfield><subfield code="9">213</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-008121919</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV012002716 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:19:59Z |
| institution | BVB |
| isbn | 9525148238 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008121919 |
| oclc_num | 42701504 |
| open_access_boolean | |
| owner | DE-355 DE-BY-UBR DE-83 |
| owner_facet | DE-355 DE-BY-UBR DE-83 |
| physical | 29 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Finnish Acad. of Technology |
| record_format | marc |
| series2 | Acta polytechnica Scandinavica / Applied physics series |
| spelling | Väkeväinen, Kyösti Verfasser aut Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques Kyösti Väkeväinen Helsinki Finnish Acad. of Technology 1997 29 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Acta polytechnica Scandinavica / Applied physics series 213 Zugl.: Helsinki, Univ., Diss., 1997 Dissipation d'énergie ram Faisceaux ioniques ram Interactions ion-ion ram Semiconducteurs ram (DE-588)4113937-9 Hochschulschrift gnd-content Applied physics series Acta polytechnica Scandinavica 213 (DE-604)BV023821053 213 |
| spellingShingle | Väkeväinen, Kyösti Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques Dissipation d'énergie ram Faisceaux ioniques ram Interactions ion-ion ram Semiconducteurs ram |
| subject_GND | (DE-588)4113937-9 |
| title | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |
| title_auth | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |
| title_exact_search | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |
| title_full | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques Kyösti Väkeväinen |
| title_fullStr | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques Kyösti Väkeväinen |
| title_full_unstemmed | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques Kyösti Väkeväinen |
| title_short | Energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |
| title_sort | energy loss interactions of ions in semiconductor materials as studied by ion beam techniques |
| topic | Dissipation d'énergie ram Faisceaux ioniques ram Interactions ion-ion ram Semiconducteurs ram |
| topic_facet | Dissipation d'énergie Faisceaux ioniques Interactions ion-ion Semiconducteurs Hochschulschrift |
| volume_link | (DE-604)BV023821053 |
| work_keys_str_mv | AT vakevainenkyosti energylossinteractionsofionsinsemiconductormaterialsasstudiedbyionbeamtechniques |