Proceedings of the Topical Workshop on III-V Nitrides: Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford
Pergamon
1997
|
| Schriftenreihe: | Solid state electronics
41,2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zeitschr.-H. |
| Beschreibung: | S. 129 - 357 Ill., graph. Darst. |
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Datensatz im Suchindex
| _version_ | 1804126508267077632 |
|---|---|
| adam_text | SOLID-STATE ELECTRONICS
VOLUME
41
NUMBER
2
FEBRUARY
1997
SPECIAL ISSUE
PROCEEDINGS
OF THE TOPICAL WORKSHOP ON
III-V NITRIDES
CONTENTS
Foreword
..................................................................................................................................... viii
Preface
......................................................................................................................................... ix
Committees
.................................................................................................................................
χ
SESSION A
PHOTONIC DEVICES
Robert F. Davis, T. W. Weeks Jr, M. D.
Bremser,
S. Tanaka,
R.
S. Kern, Z.
Sitar,
К.
S.
AiLEY,
W.
G.
Perry
and C.
Wang: Growth of
AIN
and GaN thin films via
OMVPE and gas source MBE and their characterization
................................................... 129
SESSION
В
GROWTH
K. Uchida, A. Watanabe, F. Yano, M. Kouguchi, T. Tanaka and S. Minagawa:
Characterization of nitridated layers and their effect on the growth and quality of GaN
135
F. Scholz,
V.
Härle,
H.
Bola y,
F. Steuber,
В.
Kaufmann,
G. Reyher,
Α.
Dornen,
Ο.
Gfrörer,
S.-!.
Im
and
Α.
Hangleiter:
Low pressure metalorganic vapor phase
epitaxial growth of GaN/GalnN heterostructures
................................................................ 141
Masaya Shimizu, Yasutoshi Kawaguchi, Kazumasa Hiramatsu and Nobuhiko
Sawaki: MOVPE growth of thick homogeneous InGaN directly on sapphire substrate
using A1N buffer layer
............................................................................................................... 145
Akio Yamamoto, Yasuyuki Yamauchi, Mitsugu Ohkubo, Akihiro Hashimoto and
Tohru Saitoh: Heteroepitaxial growth on InN on Si(lll) using a GaAs intermediate
layer
.............................................................................................................................................. 149
SESSION
С
LEDs
Marek Osiński and
Petr
G.
Eliseev: Radiative recombination mechanisms in high
brightness Nichia blue
LEDs.................................................................................................... 155
[continued
INDEXED IN Ret. Alert, Cam.
Sci.
Abstr.,
Chem.
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Curr. Cont./Phvs.
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ISSN
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SSELAS 41(2) 129-358 (1997)
SOLID-STATE ELECTRONICS
VOLUME
41
NUMBER
2
FEBRUARY
1997
CONTENTS conlinuedj
SESSION
D
DEVICE PROCESS
S. J. Pearton, R. J. Shul, G. F. McLANEand C.
Constantine:
Reactive ion etching of
ПІ
-V
nitrides
..............................................................................................................................
159
Y.-F. Wu, W.-N. Jiang, B. P. Keller, S. Keller, D. Kapolnek, S. P. Denbaars,
U. K. MiSHRAand B. Wilson: Low resistance ohmic contact to n-GaN with a separate
layer method
............................................................................................................................... 165
W.
Kim, O. Aktas,
A. Salvador, A. Botchkarev,
B. Sverdlov, S.
N.
Mohammad
and H.
Morkoç: MBE
grown high quality GaN films and devices
.................................. 169
SESSION
E
ELECTRON DEVICES
Steven
С
Binari,
К.
Doverspike,
G.
Kelner,
H. B.
Dietrich and A. E.
Wickenden:
GaN FETs for microwave and high-temperature applications
........................................... 177
SESSION
F
CHARACTERIZATION
B. Monemar, J. P. Bergman,
T. Lundström, C.
I. Harris, H.
Amano,
I. Akasaki,
T. Detchprohm, K. Hiramatsu and
N.
Sa
w
aki:
Optical characterization of GaN and
related materials
......................................................................................................................... 181
J.
A. Freitas
Jr,
T.
A. Kennedy,
Ε.
R.
Glaser and
W.
E.
Carlos: Optical and
magnetic resonance characterization of undoped and doped wurtzite GaN films
deposited on sapphire substrates
.............................................................................................. 185
M. Kunzer, J. Baur, U.
Kaufmann,
J. Schneider, H.
Amano
and I. Akasaki:
Properties of Mg and Zn acceptors in MOVPE GaN as studied by optically detected
magnetic resonance
.................................................................................................................... 189
Walter R. L. Lambrecht: Band-gap bowing in Ga^In^N alloys
................................. 195
H. Okumura, K. Ohta, K.
Ando,
W.
W. ROhle, T. Nagatomo and S. Yoshida:
Bandgap
energy of cubic GaN
................................................................................................. 201
Hisao Sato, Mihir
Ranjan Sarkar,
Yoshiki Naoi and Shiro Sakai: XPS
measurement of valence band discontinuity at GaP/GaN
heterointerfaces
....................... 205
SESSION
G
GROWTH AND CHARACTERIZATION
M. Kondow, K. Uomi,
A. Niwa,
T. Kitatani,
S. Watahiki, Y.
Yazawa, K. Hosomi
and T. Mozume: GaNAs grown by gas-source molecular beam epitaxy
.......................... 209
[continued
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PERGAMON issNOose-uoi
SSELAS
41(2) 129-358 (1997)
SOLID-STATE ELECTRONICS
VOLUME
41
NUMBER
2
FEBRUARY
1997
CONTENTS—continued]
M. A. L. Johnson, Shizuo Fujita, W. H. Rowland Jr, K. A. Bowers, W.
С
Hughes,
Y. W. He,
N.
A. El Masry, J. W. Cook Jr, J. F. Schetzina, J. Ren and J.
A. Edmond:
MBE growth and properties of GaN on GaN/SiC substrates
............................................ 213
J. W. Orton, D. E. Lacklison, A. V. Andrianov, T. S. Cheng, D. J. Dewsnip,
C. T. Foxon, L. C. Jenkins and
S. E.
Hooper:
Photoluminescence
study of silicon-
doped GaN grown by MBE on GaAs substrates
.................................................................. 219
Michio Sato: Nitrogen radical densities during GaN growth by molecular beam epitaxy,
plasma-assisted metalorganic chemical vapor deposition, and conventional metalorganic
chemical vapor deposition
........................................................................................................ 223
T.
Като,
P.
Kung, A. Saxler, C
J. Sun, H. Ohsato, M. Razeghi and T. Okuda:
Morphology of twinned GaN grown on
(110)
sapphire substrates
................................... 227
H. Yaguchi, S. Miyoshi, H. Arimoto, S.
Saito,
H.
Akiyama, K. Onabe, Y. Shiraki
and R.
Ito:
Nitrogen concentration dependence of
photoluminescence
decay time in
GaP^N* alloys
........................................................................................................................ 231
SESSION
H
LATE NEWS
K. H. Ploog, O. Brandt, H. Yang, J. Menniger and R. Klann: Interplay between
growth kinetics and material quality of cubic GaN
.............................................................. 235
B. Monemar, J. P. Bergman, I. A. Buyanova, H.
Amano,
I. Akasaki, T. Detchprohm,
K. Hiramatsu and
N.
Sawaki: The excitonic
bandgap
of GaN: dependence on substrate
239
R. D. Underwood, D. Kapolnek, B. P. Keller, S. Keller, S. P. Denbaars and
U. K. Mishra: Selective-area regrowth of GaN field emission tips
................................... 243
Jinwook Burm, W. J.
Schaff,
G. H. Martin, L. F. Eastman, H.
Amano
and
I. Akasaki: Recessed gate GaN MODFETs
......................................................................... 247
SPECIAL SESSION
PROSPECT OF NITRIDE LASERS
A. Kuramata, K. Horino, K.
Domen
and T. Tanahashi: Properties of GaN epitaxial
layer grown on (111) MgAl2O4 substrate
.............................................................................. 251
T. Tanaka, K. Uchida, S. Kawanaka and S. Minagawa: Stimulated emission from
rectangular GaN optical waveguides by photo-pumping and stripe design of optical
waveguides formed with a selectively grown GalnN/GaN buried heterostructure
........... 255
H. Okazaki, A. Arakawa, T. Asahi, O.
Oda
and K. Aiki: GaN epitaxial growth on
neodium
gallate
substrates
........................................................................................................ 263
¡continued
INDEXED IN Res Alert Cam.
Sci. Abstr.
Chem. Abstr. Serv.,
Curr. Com. Phys.
Chem.
&
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Sci.,
Curr.
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С
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Indx,
INSPEC
Data.,
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,
Curr.
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Cit
Indx, Curr
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CISA
ECA/ISMEC. Mater
Sci
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Indi, Appi.
Sci.
&
Tech. Indx, Wilson
Appi. Sci.
&
Tech. Abstr.
PERGAMON issN
оозв-иоі
SSELAS 41(2) 129-358 (1997)
SOLID-STATE ELECTRONICS
VOLUME
41
NUMBER
2
FEBRUARY
1997
CONTENTS—continued!
POSTER SESSION
Seiro Miyoshi and Kentaro Onabe: Semi-empirical tight-binding calculation of the
electronic structure of
GaP,_vNţ (x = 0.25,
0.5, 0.75)
alloys
............................................... 267
Masakatsu Suzuki and Takeshi Uenoyama: First-principles calculation of effective
mass parameters of GaN
.......................................................................................................... 271
A. Hoffmann, L. Eckey, P. Maxim, J.-Chr.
Holst,
R.
Heitz, D. M.
Hofmann,
D.
KovALEV,
G.
Steude,
D.
Volm, B. K. Meyer,
T. Detchprohm, K.
Hiramatsu,
H.
Amano
and I. Akasaki: Dynamical study of the yellow luminescence band in GaN
275
Bing
Zhou, K. S. A. Butcher, Helen
Zou, Xin
Li and
T. L.
Tansley:
Photoconductive decay in LCVD/PECVD low temperature grown GaN
......................... 279
Ichirou Nomura, Katsumi Kjshino and Akihiko Kikuchi: Theoretical estimation of
threshold current of cubic GalnN/GaN/AlGaN quantum well lasers
............................... 283
Mohammad Rezaul Huque Khan, Hisashi Nakayama, Theeradetch Detch¬
prohm, Kazumasa Hiramatsu and Nobuhiko Sawaki: A study on barrier height of
Au-AljGai^N Schottky diodes in the range
0^x^0.20.................................................. 287
Yawara Kaneko, Norihide Yamada, Tetsuya Takeuchi, Yoshifumi Yamaoka,
Hiroshi
Amano
and Isamu Akasaki: Melt-back etching of GaN
.................................... 295
Kazutoshi Fukui, Masatake Ichikawa, Akio Yamamoto and Masao Kamada:
Photoemission
and core absorption studies of indium nitride
............................................. 299
K. S. A. Butcher, T. L. Tansley, Xin Li and
Bing
Zhou: Photolytic
absórbate
removal during the growth of aluminium nitride by remote microwave plasma chemical
vapour deposition
....................................................................................................................... 305
O. Briot, J. P. Alexis, S. Sanchez, B. Gil and R. L. Aulombard: Influence of the
V/III molar ratio on the structural and electronic properties of MOVPE grown GaN
.. 315
Hiroyuki Naoi, Yoshiki Naoi and Shiro Sakai: MOCVD growth of InAsN for
infrared applications
.................................................................................................................. 319
M. Sato: Critical layer thickness of GaN thin layers embedded in GaAs
........................ 323
S. Yoshida and M. Sasaki: Cubic GaN formation using dimethylhy
d
razine
and an
etching method
........................................................................................................................... 327
H. Tsuchiya, A. Takeuchi, A. Matsuo and F. Hasegawa: Dependence of the HPVE
GaN epilayer on GaN buffer layer for GaN direct growth on
(001)
GaAs substrate
..... 333
K. R. Evans, Ting Lei and C. R. Jones: Gallium incorporation kinetics during gas-
source molecular beam epitaxy growth of GaN
.................................................................... 339
[continued
INDEXED IN Res. Alert, Cam
Sci
Abstr..
Chem.
Abstr.
Serv.,
Cuit
Cont.
Phys.
Chem
&
Earth
Sci., Curi. Cont./Eng. Tech.
&
Appi. Sci., Curr. Tech. Indi,
Eng.
Ind*
INSPEC
Data..
PASCAL-CNRS
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.
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Cit
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SCISEARCH Data., SSSA/CISA/ECA/ISMEC,
Mater.
Sci.
Cit.
Indi, Appi.
Sci.
4
Tech. Indi,
Wilson
Appi. Sci.
&
Tech. Abstr.
PERGAMON issN
оода-поі
SSELAS 41(2) 129-358 (1997)
SOLID-STATE ELECTRONICS
VOLUME
41
NUMBER
2
FEBRUARY
1997
CONTENTS—continued]
T. MAKiMOToand
N.
Kobayashi: Formation and etching of thin nitride layers on GaAs
using atomic nitrogen and hydrogen
....................................................................................... 345
D. J. Smith, S.-C. Y. Tsen, B.
N.
Sverdlov, G. Martin and
H. Morkoç:
Stacking
mismatch boundaries in GaN: implications for substrate selection
.................................... 349
J. M.
Zavada,
C. R.
Abernathy,
S. J.
Pearton,
J. D.
Mackenzie,
J. R. Mileham,
R. G.
Wilson,
R. N.
Schwartz,
M. Haggerott-Crawford, R. J. Shul, S. P. Kilcoyne,
D.
Zhang
and R. M. Kolbas:
Microdisk
laser
structures formed
in
III—
V nitride
epilayers
....................................................................................................................................... 353
Author Index
.
INDEXED IN
Res Alen
Cam
Sci
Abstr
,
Chem. Abstr. Serv.,
Curr.
Cont.,
Phys.
Chem
&.
Earth
Sci.,
Сшт.
Cont.
Eng. Tech. &
Appi. Sci., Curr. Tech. Indx.
Eng.
Indi, INSPEC Data., PASCAL-CNRS Data.. Curr
Cont
Sci
Cit
Indx, Curr
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SCISEARCH Data
„
SSSA
CISA
ECA ISMÈC.
Mater
Su
Cit Indx,
Appi
Sci.
& Tech. Indx, Wilson
Appi. Sci.
*
Tech. Abstr.
PERGAMON «SSN
оозв-пої
SSELAS 41(2) 129-358(1997)
|
| any_adam_object | 1 |
| author_corporate | Topical Workshop on III-V Nitrides Nagoya |
| author_corporate_role | aut |
| author_facet | Topical Workshop on III-V Nitrides Nagoya |
| author_sort | Topical Workshop on III-V Nitrides Nagoya |
| building | Verbundindex |
| bvnumber | BV011919738 |
| classification_tum | PHY 693f |
| ctrlnum | (OCoLC)174372304 (DE-599)BVBBV011919738 |
| discipline | Physik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV011919738 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:18:34Z |
| institution | BVB |
| institution_GND | (DE-588)5201664-X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-008057465 |
| oclc_num | 174372304 |
| open_access_boolean | |
| owner | DE-703 DE-91 DE-BY-TUM |
| owner_facet | DE-703 DE-91 DE-BY-TUM |
| physical | S. 129 - 357 Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Pergamon |
| record_format | marc |
| series2 | Solid state electronics |
| spelling | Topical Workshop on III-V Nitrides 1995 Nagoya Verfasser (DE-588)5201664-X aut Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 TWN '95 Nagoya Oxford Pergamon 1997 S. 129 - 357 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Solid state electronics 41,2 Einzelaufnahme eines Zeitschr.-H. Gallium (DE-588)4155859-5 gnd rswk-swf Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Stickstoffverbindungen (DE-588)4183288-7 gnd rswk-swf Elektronische Schaltung (DE-588)4113419-9 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Nitride (DE-588)4171929-3 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Drei-Fünf-Halbleiter (DE-588)4150649-2 s Nitride (DE-588)4171929-3 s DE-604 Gallium (DE-588)4155859-5 s 1\p DE-604 Epitaxie (DE-588)4152545-0 s 2\p DE-604 Kristallwachstum (DE-588)4123579-4 s 3\p DE-604 Elektronische Schaltung (DE-588)4113419-9 s 4\p DE-604 Stickstoffverbindungen (DE-588)4183288-7 s 5\p DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008057465&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 Gallium (DE-588)4155859-5 gnd Kristallwachstum (DE-588)4123579-4 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Elektronische Schaltung (DE-588)4113419-9 gnd Epitaxie (DE-588)4152545-0 gnd Nitride (DE-588)4171929-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| subject_GND | (DE-588)4155859-5 (DE-588)4123579-4 (DE-588)4183288-7 (DE-588)4113419-9 (DE-588)4152545-0 (DE-588)4171929-3 (DE-588)4150649-2 (DE-588)1071861417 |
| title | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 |
| title_auth | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 |
| title_exact_search | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 |
| title_full | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 TWN '95 Nagoya |
| title_fullStr | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 TWN '95 Nagoya |
| title_full_unstemmed | Proceedings of the Topical Workshop on III-V Nitrides Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 TWN '95 Nagoya |
| title_short | Proceedings of the Topical Workshop on III-V Nitrides |
| title_sort | proceedings of the topical workshop on iii v nitrides nagoya congress center nagoya japan 21 23 september 1995 |
| title_sub | Nagoya Congress Center, Nagoya, Japan, 21 - 23 September 1995 |
| topic | Gallium (DE-588)4155859-5 gnd Kristallwachstum (DE-588)4123579-4 gnd Stickstoffverbindungen (DE-588)4183288-7 gnd Elektronische Schaltung (DE-588)4113419-9 gnd Epitaxie (DE-588)4152545-0 gnd Nitride (DE-588)4171929-3 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd |
| topic_facet | Gallium Kristallwachstum Stickstoffverbindungen Elektronische Schaltung Epitaxie Nitride Drei-Fünf-Halbleiter Konferenzschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=008057465&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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