Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure: device development, characteristics and selected applications
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Mikrofilm Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
1997
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| Ausgabe: | [Mikrofiche-Ausg.] |
| Schlagworte: | |
| Beschreibung: | Zürich, Techn. Hochsch., Diss., 1997. - Mikrofiche-Ausg.: 2 Mikrofiches : 24x |
| Beschreibung: | III, 183 S. graph. Darst. |
Internformat
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| 245 | 1 | 0 | |a Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure |b device development, characteristics and selected applications |c presented by Christoph Holtmann |
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Datensatz im Suchindex
| _version_ | 1804126342628769792 |
|---|---|
| any_adam_object | |
| author | Holtmann, Christoph 1964- |
| author_GND | (DE-588)115783806 |
| author_facet | Holtmann, Christoph 1964- |
| author_role | aut |
| author_sort | Holtmann, Christoph 1964- |
| author_variant | c h ch |
| building | Verbundindex |
| bvnumber | BV011798444 |
| classification_tum | ELT 361d |
| ctrlnum | (OCoLC)634498127 (DE-599)BVBBV011798444 |
| discipline | Elektrotechnik |
| edition | [Mikrofiche-Ausg.] |
| format | Microfilm Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV011798444 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:15:56Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007965489 |
| oclc_num | 634498127 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T |
| owner_facet | DE-91 DE-BY-TUM DE-29T |
| physical | III, 183 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| record_format | marc |
| spelling | Holtmann, Christoph 1964- Verfasser (DE-588)115783806 aut Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications presented by Christoph Holtmann Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge-waveguide structure [Mikrofiche-Ausg.] 1997 III, 183 S. graph. Darst. txt rdacontent h rdamedia he rdacarrier Zürich, Techn. Hochsch., Diss., 1997. - Mikrofiche-Ausg.: 2 Mikrofiches : 24x Mikroform (DE-588)4039216-8 gnd rswk-swf Optischer Halbleiterverstärker (DE-588)4272151-9 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Optischer Halbleiterverstärker (DE-588)4272151-9 s Indiumarsenid (DE-588)4249718-8 s Galliumarsenid (DE-588)4019155-2 s Indiumphosphid (DE-588)4161535-9 s Heterostruktur (DE-588)4123378-5 s DE-604 Mikroform (DE-588)4039216-8 s |
| spellingShingle | Holtmann, Christoph 1964- Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications Mikroform (DE-588)4039216-8 gnd Optischer Halbleiterverstärker (DE-588)4272151-9 gnd Galliumarsenid (DE-588)4019155-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Indiumphosphid (DE-588)4161535-9 gnd Heterostruktur (DE-588)4123378-5 gnd |
| subject_GND | (DE-588)4039216-8 (DE-588)4272151-9 (DE-588)4019155-2 (DE-588)4249718-8 (DE-588)4161535-9 (DE-588)4123378-5 (DE-588)4113937-9 |
| title | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications |
| title_alt | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge-waveguide structure |
| title_auth | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications |
| title_exact_search | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications |
| title_full | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications presented by Christoph Holtmann |
| title_fullStr | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications presented by Christoph Holtmann |
| title_full_unstemmed | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure device development, characteristics and selected applications presented by Christoph Holtmann |
| title_short | Polarization insensitive semiconductor optical amplifiers in InGaAsP-InP for 1.3 mym wavelengths exploiting bulk ridge waveguide structure |
| title_sort | polarization insensitive semiconductor optical amplifiers in ingaasp inp for 1 3 mym wavelengths exploiting bulk ridge waveguide structure device development characteristics and selected applications |
| title_sub | device development, characteristics and selected applications |
| topic | Mikroform (DE-588)4039216-8 gnd Optischer Halbleiterverstärker (DE-588)4272151-9 gnd Galliumarsenid (DE-588)4019155-2 gnd Indiumarsenid (DE-588)4249718-8 gnd Indiumphosphid (DE-588)4161535-9 gnd Heterostruktur (DE-588)4123378-5 gnd |
| topic_facet | Mikroform Optischer Halbleiterverstärker Galliumarsenid Indiumarsenid Indiumphosphid Heterostruktur Hochschulschrift |
| work_keys_str_mv | AT holtmannchristoph polarizationinsensitivesemiconductoropticalamplifiersiningaaspinpfor13mymwavelengthsexploitingbulkridgewaveguidestructuredevicedevelopmentcharacteristicsandselectedapplications AT holtmannchristoph polarizationinsensitivesemiconductoropticalamplifiersiningaaspinpfor13mymwavelengthsexploitingbulkridgewaveguidestructure |