Electronic states at the silicon-silicon dioxide interface:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Oxford [u.a.]
Pergamon Press
1977
|
| Schriftenreihe: | Progress in surface science
8,5 |
| Schlagworte: | |
| Beschreibung: | Umschlagt. -Einzelaufn. eines Zeitschr.-Heftes |
| Beschreibung: | S. 181 - 218 graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV011757572 | ||
| 003 | DE-604 | ||
| 005 | 20100528 | ||
| 007 | t | ||
| 008 | 980206s1977 d||| |||| 00||| eng d | ||
| 035 | |a (OCoLC)5184719 | ||
| 035 | |a (DE-599)BVBBV011757572 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-19 | ||
| 050 | 0 | |a QD939 | |
| 100 | 1 | |a Cheng, Y. C. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Electronic states at the silicon-silicon dioxide interface |c Y. C. Cheng |
| 264 | 1 | |a Oxford [u.a.] |b Pergamon Press |c 1977 | |
| 300 | |a S. 181 - 218 |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Progress in surface science |v 8,5 | |
| 500 | |a Umschlagt. -Einzelaufn. eines Zeitschr.-Heftes | ||
| 650 | 4 | |a Silicon crystals |x Electric properties | |
| 830 | 0 | |a Progress in surface science |v 8,5 |w (DE-604)BV005624528 |9 8,5 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007934805 | ||
Datensatz im Suchindex
| _version_ | 1804126301828677632 |
|---|---|
| any_adam_object | |
| author | Cheng, Y. C. |
| author_facet | Cheng, Y. C. |
| author_role | aut |
| author_sort | Cheng, Y. C. |
| author_variant | y c c yc ycc |
| building | Verbundindex |
| bvnumber | BV011757572 |
| callnumber-first | Q - Science |
| callnumber-label | QD939 |
| callnumber-raw | QD939 |
| callnumber-search | QD939 |
| callnumber-sort | QD 3939 |
| callnumber-subject | QD - Chemistry |
| ctrlnum | (OCoLC)5184719 (DE-599)BVBBV011757572 |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00949nam a2200301 cb4500</leader><controlfield tag="001">BV011757572</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20100528 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">980206s1977 d||| |||| 00||| eng d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)5184719</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV011757572</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-19</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QD939</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cheng, Y. C.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electronic states at the silicon-silicon dioxide interface</subfield><subfield code="c">Y. C. Cheng</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Oxford [u.a.]</subfield><subfield code="b">Pergamon Press</subfield><subfield code="c">1977</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">S. 181 - 218</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Progress in surface science</subfield><subfield code="v">8,5</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Umschlagt. -Einzelaufn. eines Zeitschr.-Heftes</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon crystals</subfield><subfield code="x">Electric properties</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Progress in surface science</subfield><subfield code="v">8,5</subfield><subfield code="w">(DE-604)BV005624528</subfield><subfield code="9">8,5</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007934805</subfield></datafield></record></collection> |
| id | DE-604.BV011757572 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:15:17Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007934805 |
| oclc_num | 5184719 |
| open_access_boolean | |
| owner | DE-19 DE-BY-UBM |
| owner_facet | DE-19 DE-BY-UBM |
| physical | S. 181 - 218 graph. Darst. |
| publishDate | 1977 |
| publishDateSearch | 1977 |
| publishDateSort | 1977 |
| publisher | Pergamon Press |
| record_format | marc |
| series | Progress in surface science |
| series2 | Progress in surface science |
| spelling | Cheng, Y. C. Verfasser aut Electronic states at the silicon-silicon dioxide interface Y. C. Cheng Oxford [u.a.] Pergamon Press 1977 S. 181 - 218 graph. Darst. txt rdacontent n rdamedia nc rdacarrier Progress in surface science 8,5 Umschlagt. -Einzelaufn. eines Zeitschr.-Heftes Silicon crystals Electric properties Progress in surface science 8,5 (DE-604)BV005624528 8,5 |
| spellingShingle | Cheng, Y. C. Electronic states at the silicon-silicon dioxide interface Progress in surface science Silicon crystals Electric properties |
| title | Electronic states at the silicon-silicon dioxide interface |
| title_auth | Electronic states at the silicon-silicon dioxide interface |
| title_exact_search | Electronic states at the silicon-silicon dioxide interface |
| title_full | Electronic states at the silicon-silicon dioxide interface Y. C. Cheng |
| title_fullStr | Electronic states at the silicon-silicon dioxide interface Y. C. Cheng |
| title_full_unstemmed | Electronic states at the silicon-silicon dioxide interface Y. C. Cheng |
| title_short | Electronic states at the silicon-silicon dioxide interface |
| title_sort | electronic states at the silicon silicon dioxide interface |
| topic | Silicon crystals Electric properties |
| topic_facet | Silicon crystals Electric properties |
| volume_link | (DE-604)BV005624528 |
| work_keys_str_mv | AT chengyc electronicstatesatthesiliconsilicondioxideinterface |