Bufler, F. M. (1998). Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe. Utz, Wiss.
Chicago Style (17th ed.) CitationBufler, Fabian M. Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe. München: Utz, Wiss, 1998.
MLA (9th ed.) CitationBufler, Fabian M. Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe. Utz, Wiss, 1998.
Warning: These citations may not always be 100% accurate.