Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
München
Utz, Wiss.
1998
|
| Schriftenreihe: | Elektrotechnik
|
| Schlagworte: | |
| Beschreibung: | Zugl.: Bremen, Univ., Diss., 1997 |
| Beschreibung: | VI, 178 S. Ill. |
| ISBN: | 3896752707 |
Internformat
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| 264 | 1 | |a München |b Utz, Wiss. |c 1998 | |
| 300 | |a VI, 178 S. |b Ill. | ||
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Datensatz im Suchindex
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| author | Bufler, Fabian M. |
| author_facet | Bufler, Fabian M. |
| author_role | aut |
| author_sort | Bufler, Fabian M. |
| author_variant | f m b fm fmb |
| building | Verbundindex |
| bvnumber | BV011753591 |
| classification_rvk | ZN 4810 |
| ctrlnum | (OCoLC)643099744 (DE-599)BVBBV011753591 |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV011753591 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:15:13Z |
| institution | BVB |
| isbn | 3896752707 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007931399 |
| oclc_num | 643099744 |
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| owner_facet | DE-19 DE-BY-UBM DE-12 DE-355 DE-BY-UBR DE-83 |
| physical | VI, 178 S. Ill. |
| publishDate | 1998 |
| publishDateSearch | 1998 |
| publishDateSort | 1998 |
| publisher | Utz, Wiss. |
| record_format | marc |
| series2 | Elektrotechnik |
| spelling | Bufler, Fabian M. Verfasser aut Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe Fabian M. Bufler München Utz, Wiss. 1998 VI, 178 S. Ill. txt rdacontent n rdamedia nc rdacarrier Elektrotechnik Zugl.: Bremen, Univ., Diss., 1997 Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Mischkristall (DE-588)4170112-4 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Monte-Carlo-Simulation (DE-588)4240945-7 gnd rswk-swf Elastische Deformation (DE-588)4193856-2 gnd rswk-swf Germanium (DE-588)4135644-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Elastische Deformation (DE-588)4193856-2 s Elektronischer Transport (DE-588)4210733-7 s Monte-Carlo-Simulation (DE-588)4240945-7 s DE-604 Germanium (DE-588)4135644-5 s Mischkristall (DE-588)4170112-4 s |
| spellingShingle | Bufler, Fabian M. Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe Elektronischer Transport (DE-588)4210733-7 gnd Mischkristall (DE-588)4170112-4 gnd Silicium (DE-588)4077445-4 gnd Monte-Carlo-Simulation (DE-588)4240945-7 gnd Elastische Deformation (DE-588)4193856-2 gnd Germanium (DE-588)4135644-5 gnd |
| subject_GND | (DE-588)4210733-7 (DE-588)4170112-4 (DE-588)4077445-4 (DE-588)4240945-7 (DE-588)4193856-2 (DE-588)4135644-5 (DE-588)4113937-9 |
| title | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe |
| title_auth | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe |
| title_exact_search | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe |
| title_full | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe Fabian M. Bufler |
| title_fullStr | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe Fabian M. Bufler |
| title_full_unstemmed | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe Fabian M. Bufler |
| title_short | Full-band Monte Carlo simulation of electrons and holes in strained Si and SiGe |
| title_sort | full band monte carlo simulation of electrons and holes in strained si and sige |
| topic | Elektronischer Transport (DE-588)4210733-7 gnd Mischkristall (DE-588)4170112-4 gnd Silicium (DE-588)4077445-4 gnd Monte-Carlo-Simulation (DE-588)4240945-7 gnd Elastische Deformation (DE-588)4193856-2 gnd Germanium (DE-588)4135644-5 gnd |
| topic_facet | Elektronischer Transport Mischkristall Silicium Monte-Carlo-Simulation Elastische Deformation Germanium Hochschulschrift |
| work_keys_str_mv | AT buflerfabianm fullbandmontecarlosimulationofelectronsandholesinstrainedsiandsige |