GaN and related materials:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam
Gordon and Breach Science Publ.
1997
|
| Schriftenreihe: | Optoelectronic properties of semiconductors and superlattices
2 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XI, 538 S. Ill., graph. Darst. |
| ISBN: | 9056995162 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV011683752 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 971215s1997 ad|| |||| 00||| eng d | ||
| 020 | |a 9056995162 |9 90-5699-516-2 | ||
| 035 | |a (OCoLC)37516244 | ||
| 035 | |a (DE-599)BVBBV011683752 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-29T |a DE-20 |a DE-384 |a DE-355 |a DE-83 | ||
| 050 | 0 | |a TK7871.15.G33 | |
| 082 | 0 | |a 621.3815/2 |2 21 | |
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 245 | 1 | 0 | |a GaN and related materials |c ed. by Stephen J. Pearton |
| 264 | 1 | |a Amsterdam |b Gordon and Breach Science Publ. |c 1997 | |
| 300 | |a XI, 538 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Optoelectronic properties of semiconductors and superlattices |v 2 | |
| 650 | 7 | |a GALLIUM COMPOUNDS |2 nasat | |
| 650 | 7 | |a GALLIUM NITRIDES |2 nasat | |
| 650 | 7 | |a Gallium - Composés |2 ram | |
| 650 | 7 | |a NITRIDES |2 nasat | |
| 650 | 7 | |a Nitrures |2 ram | |
| 650 | 7 | |a SEMICONDUCTORS (MATERIALS) |2 nasat | |
| 650 | 7 | |a Semiconducteurs à l'arséniure de gallium |2 ram | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 4 | |a Gallium compounds | |
| 650 | 4 | |a Nitrides | |
| 650 | 4 | |a Semiconductors |x Materials | |
| 650 | 0 | 7 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumverbindungen |0 (DE-588)4155888-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumnitrid |0 (DE-588)4375592-6 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Galliumverbindungen |0 (DE-588)4155888-1 |D s |
| 689 | 0 | 1 | |a Drei-Fünf-Halbleiter |0 (DE-588)4150649-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Galliumnitrid |0 (DE-588)4375592-6 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Pearton, Stephen J. |e Sonstige |4 oth | |
| 830 | 0 | |a Optoelectronic properties of semiconductors and superlattices |v 2 |w (DE-604)BV011683729 |9 2 | |
| 856 | 4 | 2 | |m GBV Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007877406&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007877406 | ||
Datensatz im Suchindex
| _version_ | 1804126219874074624 |
|---|---|
| adam_text | GAN AND RELATED MATERIALS EDITED BY STEPHEN J. PEARTON UNIVERSITY OF
FLORIDA GAINESVILLE, USA GORDON AND BREACH SCIENCE PUBLISHERS AUSTRALIA
* CANADA * CHINA * FRANCE * GERMANY * INDIA * JAPAN LUXEMBOURG *
MALAYSIA * THE NETHERLANDS * RUSSIA * SINGAPORE SWITZERLAND * THAILAND *
UNITED KINGDOM CONTENTS ABOUT THE SERIES VII INTRODUCTION IX 1 A
HISTORICAL SURVEY OF RESEARCH ON GALLIUM NITRIDE 1 JACQUES I. PANKOVE 2
GROWTH OF GROUP-ILL NITRIDES FROM MOLECULAR BEAMS 11 C. R. ABERNATHY 3
TERNARY ALLOYS 53 TAKASHI MATSUOKA 4 OPTICAL CHARACTERIZATION OF GAN AND
RELATED MATERIALS 85 B. MONEMAR, J. P. BERGMAN AND I. A. BUYANOVA 5
MICROSTRUCTURE OF EPITAXIAL III-V NITRIDE THIN FILMS 141 FERNANDO A.
PONCE 6 THEORETICAL STUDIES IN GAN 171 STEFAN K. ESTREICHER AND DERRICK
E. BOUCHER 7 GAASN ALLOYS AND GAN/GAAS THIN LAYER STRUCTURES 201 MICHIO
SATO 8 THE CONTRIBUTION OF DEFECTS TO THE ELECTRICAL AND OPTICAL
PROPERTIES OF GAN 233 T. L. TANSLEY, E. M. GOLDYS, M. GODLEWSKI, B. ZHOU
AND H. Y. ZUO 9 GROWTH OF GAN SINGLE CRYSTALS UNDER HIGH NITROGEN
PRESSURE 295 S. POROWSKI AND I. GRZEGORY 10 PHYSICAL PROPERTIES OF THE
BULK GAN CRYSTALS GROWN BY THE HIGH-PRESSURE, HIGH TEMPERATURE METHOD
315 PIOTR PERLIN, TADEUSZ SUSKI, MICHAL LESZCZYNSKI AND HENRYK TEISSEYRE
11 THE ROLE OF HYDROGEN IN GAN AND RELATED COMPOUNDS 333 STEPHEN J.
PEARTON VI CONTENTS 12 ION IMPLANTATION DOPING AND ISOLATION OF
ILL-NITRIDE MATERIALS 371 J. C. ZOLPER 13 HIGH-DENSITY ECR ETCHING OF
GROUP-ILL NITRIDES 399 R. J. SHUL 14 CONTACTS ON ILL-NITRIDES 433 FAN
REN 15 III-V NITRIDE BASED LEDS 471 SHUJI NAKAMURA 16 III-V NITRIDE
ELECTRONIC DEVICES 509 STEVEN C. BINARI AND HARRY B. DIETRICH INDEX 535
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV011683752 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.15.G33 |
| callnumber-search | TK7871.15.G33 |
| callnumber-sort | TK 47871.15 G33 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 3100 |
| ctrlnum | (OCoLC)37516244 (DE-599)BVBBV011683752 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02168nam a2200553 cb4500</leader><controlfield tag="001">BV011683752</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">971215s1997 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9056995162</subfield><subfield code="9">90-5699-516-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)37516244</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV011683752</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-384</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.15.G33</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">21</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">GaN and related materials</subfield><subfield code="c">ed. by Stephen J. Pearton</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam</subfield><subfield code="b">Gordon and Breach Science Publ.</subfield><subfield code="c">1997</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XI, 538 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Optoelectronic properties of semiconductors and superlattices</subfield><subfield code="v">2</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">GALLIUM COMPOUNDS</subfield><subfield code="2">nasat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">GALLIUM NITRIDES</subfield><subfield code="2">nasat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium - Composés</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">NITRIDES</subfield><subfield code="2">nasat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nitrures</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SEMICONDUCTORS (MATERIALS)</subfield><subfield code="2">nasat</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs à l'arséniure de gallium</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Semiconducteurs</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium compounds</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nitrides</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Materials</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumverbindungen</subfield><subfield code="0">(DE-588)4155888-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Galliumverbindungen</subfield><subfield code="0">(DE-588)4155888-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Drei-Fünf-Halbleiter</subfield><subfield code="0">(DE-588)4150649-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Galliumnitrid</subfield><subfield code="0">(DE-588)4375592-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pearton, Stephen J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Optoelectronic properties of semiconductors and superlattices</subfield><subfield code="v">2</subfield><subfield code="w">(DE-604)BV011683729</subfield><subfield code="9">2</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">GBV Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007877406&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007877406</subfield></datafield></record></collection> |
| id | DE-604.BV011683752 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:13:59Z |
| institution | BVB |
| isbn | 9056995162 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007877406 |
| oclc_num | 37516244 |
| open_access_boolean | |
| owner | DE-703 DE-29T DE-20 DE-384 DE-355 DE-BY-UBR DE-83 |
| owner_facet | DE-703 DE-29T DE-20 DE-384 DE-355 DE-BY-UBR DE-83 |
| physical | XI, 538 S. Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Gordon and Breach Science Publ. |
| record_format | marc |
| series | Optoelectronic properties of semiconductors and superlattices |
| series2 | Optoelectronic properties of semiconductors and superlattices |
| spelling | GaN and related materials ed. by Stephen J. Pearton Amsterdam Gordon and Breach Science Publ. 1997 XI, 538 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Optoelectronic properties of semiconductors and superlattices 2 GALLIUM COMPOUNDS nasat GALLIUM NITRIDES nasat Gallium - Composés ram NITRIDES nasat Nitrures ram SEMICONDUCTORS (MATERIALS) nasat Semiconducteurs à l'arséniure de gallium ram Semiconducteurs ram Gallium compounds Nitrides Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Galliumverbindungen (DE-588)4155888-1 gnd rswk-swf Galliumnitrid (DE-588)4375592-6 gnd rswk-swf Galliumverbindungen (DE-588)4155888-1 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 Galliumnitrid (DE-588)4375592-6 s Pearton, Stephen J. Sonstige oth Optoelectronic properties of semiconductors and superlattices 2 (DE-604)BV011683729 2 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007877406&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaN and related materials Optoelectronic properties of semiconductors and superlattices GALLIUM COMPOUNDS nasat GALLIUM NITRIDES nasat Gallium - Composés ram NITRIDES nasat Nitrures ram SEMICONDUCTORS (MATERIALS) nasat Semiconducteurs à l'arséniure de gallium ram Semiconducteurs ram Gallium compounds Nitrides Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumverbindungen (DE-588)4155888-1 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| subject_GND | (DE-588)4150649-2 (DE-588)4155888-1 (DE-588)4375592-6 |
| title | GaN and related materials |
| title_auth | GaN and related materials |
| title_exact_search | GaN and related materials |
| title_full | GaN and related materials ed. by Stephen J. Pearton |
| title_fullStr | GaN and related materials ed. by Stephen J. Pearton |
| title_full_unstemmed | GaN and related materials ed. by Stephen J. Pearton |
| title_short | GaN and related materials |
| title_sort | gan and related materials |
| topic | GALLIUM COMPOUNDS nasat GALLIUM NITRIDES nasat Gallium - Composés ram NITRIDES nasat Nitrures ram SEMICONDUCTORS (MATERIALS) nasat Semiconducteurs à l'arséniure de gallium ram Semiconducteurs ram Gallium compounds Nitrides Semiconductors Materials Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Galliumverbindungen (DE-588)4155888-1 gnd Galliumnitrid (DE-588)4375592-6 gnd |
| topic_facet | GALLIUM COMPOUNDS GALLIUM NITRIDES Gallium - Composés NITRIDES Nitrures SEMICONDUCTORS (MATERIALS) Semiconducteurs à l'arséniure de gallium Semiconducteurs Gallium compounds Nitrides Semiconductors Materials Drei-Fünf-Halbleiter Galliumverbindungen Galliumnitrid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007877406&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV011683729 |
| work_keys_str_mv | AT peartonstephenj ganandrelatedmaterials |