Gate dielectrics and MOS ULSIs: principles, technologies and applications
Saved in:
| Main Author: | |
|---|---|
| Format: | Book |
| Language: | German |
| Published: |
Berlin [u.a.]
Springer
1997
|
| Series: | Springer series in electronics and photonics
34 |
| Subjects: | |
| Physical Description: | XIV, 352 S. graph. Darst. |
| ISBN: | 3540631828 |
Staff View
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| 245 | 1 | 0 | |a Gate dielectrics and MOS ULSIs |b principles, technologies and applications |c Takashi Hori |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 1997 | |
| 300 | |a XIV, 352 S. |b graph. Darst. | ||
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| 650 | 7 | |a Technologie silicium sur isolant |2 ram | |
| 650 | 4 | |a Dielectric devices | |
| 650 | 4 | |a Integrated circuits |x Ultra large scale integration | |
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Record in the Search Index
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|---|---|
| any_adam_object | |
| author | Hori, Takashi |
| author_facet | Hori, Takashi |
| author_role | aut |
| author_sort | Hori, Takashi |
| author_variant | t h th |
| building | Verbundindex |
| bvnumber | BV011523821 |
| callnumber-first | T - Technology |
| callnumber-label | TK7874 |
| callnumber-raw | TK7874.76 |
| callnumber-search | TK7874.76 |
| callnumber-sort | TK 47874.76 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4870 |
| ctrlnum | (OCoLC)37277576 (DE-599)BVBBV011523821 |
| dewey-full | 621.3815/284 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/284 |
| dewey-search | 621.3815/284 |
| dewey-sort | 3621.3815 3284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV011523821 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:11:12Z |
| institution | BVB |
| isbn | 3540631828 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007755275 |
| oclc_num | 37277576 |
| open_access_boolean | |
| owner | DE-703 DE-29T DE-1050 DE-706 DE-83 DE-634 |
| owner_facet | DE-703 DE-29T DE-1050 DE-706 DE-83 DE-634 |
| physical | XIV, 352 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in electronics and photonics |
| series2 | Springer series in electronics and photonics |
| spelling | Hori, Takashi Verfasser aut Gate dielectrics and MOS ULSIs principles, technologies and applications Takashi Hori Berlin [u.a.] Springer 1997 XIV, 352 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in electronics and photonics 34 Circuits intégrés à grande échelle ram Dispositifs diélectriques ram MOS (électronique) ram Technologie silicium sur isolant ram Dielectric devices Integrated circuits Ultra large scale integration Metal oxide semiconductors Silicon-on-insulator technology SOI-Technik (DE-588)4128029-5 gnd rswk-swf ULSI (DE-588)4226286-0 gnd rswk-swf Dielektrische Schicht (DE-588)4194257-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s ULSI (DE-588)4226286-0 s Dielektrische Schicht (DE-588)4194257-7 s SOI-Technik (DE-588)4128029-5 s DE-604 Springer series in electronics and photonics 34 (DE-604)BV000023098 34 |
| spellingShingle | Hori, Takashi Gate dielectrics and MOS ULSIs principles, technologies and applications Springer series in electronics and photonics Circuits intégrés à grande échelle ram Dispositifs diélectriques ram MOS (électronique) ram Technologie silicium sur isolant ram Dielectric devices Integrated circuits Ultra large scale integration Metal oxide semiconductors Silicon-on-insulator technology SOI-Technik (DE-588)4128029-5 gnd ULSI (DE-588)4226286-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4128029-5 (DE-588)4226286-0 (DE-588)4194257-7 (DE-588)4207266-9 |
| title | Gate dielectrics and MOS ULSIs principles, technologies and applications |
| title_auth | Gate dielectrics and MOS ULSIs principles, technologies and applications |
| title_exact_search | Gate dielectrics and MOS ULSIs principles, technologies and applications |
| title_full | Gate dielectrics and MOS ULSIs principles, technologies and applications Takashi Hori |
| title_fullStr | Gate dielectrics and MOS ULSIs principles, technologies and applications Takashi Hori |
| title_full_unstemmed | Gate dielectrics and MOS ULSIs principles, technologies and applications Takashi Hori |
| title_short | Gate dielectrics and MOS ULSIs |
| title_sort | gate dielectrics and mos ulsis principles technologies and applications |
| title_sub | principles, technologies and applications |
| topic | Circuits intégrés à grande échelle ram Dispositifs diélectriques ram MOS (électronique) ram Technologie silicium sur isolant ram Dielectric devices Integrated circuits Ultra large scale integration Metal oxide semiconductors Silicon-on-insulator technology SOI-Technik (DE-588)4128029-5 gnd ULSI (DE-588)4226286-0 gnd Dielektrische Schicht (DE-588)4194257-7 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | Circuits intégrés à grande échelle Dispositifs diélectriques MOS (électronique) Technologie silicium sur isolant Dielectric devices Integrated circuits Ultra large scale integration Metal oxide semiconductors Silicon-on-insulator technology SOI-Technik ULSI Dielektrische Schicht MOS-FET |
| volume_link | (DE-604)BV000023098 |
| work_keys_str_mv | AT horitakashi gatedielectricsandmosulsisprinciplestechnologiesandapplications |