Microstructure evolution during irradiation: symposium held December 2 - 5, 1996, Boston, Massachusetts, USA
Gespeichert in:
Format: | Buch |
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Sprache: | English |
Veröffentlicht: |
Pittsburgh, Pa.
MRS
1997
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Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
439 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XVII, 733 S. Ill., graph. Darst. |
ISBN: | 1558993436 |
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adam_text | MATERIALS RESEARCH SOCKXY SYMPOSIUM PROCEEDINGS VOLUME 459
MICROSTRUCTURE EVOLUTION DURING IRRADIATION SYMPOSIUM HELD DECEMBER
2-5,1996, BOSTON, MASSACHUSETTS, U.S.A. EDITORS: IAN M. ROBERTSON
UNIVERSITY OF ILLINOIS URBANA, ILLINOIS, U.S.A. GARY S. WAS UNIVERSITY
OF MICHIGAN ANN ARBOR, MICHIGAN, U.S.A. LINN W. IFOBBS MASSACHUSETTS
INSTITUTE OF TECHNOLOGY CAMBRIDGE, MASSACHUSETTS, U.S.A. TOMAS DIAZ DE
LA RUBIA LAWRENCE LIVERMORE NATIONAL LABORATORY LIVERMORE, CALIFORNIA,
U.S.A. IMTRTSI MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA
CONTENTS PREFACE XV ACKNOWLEDGMENTS XVII MATERIALS RESEARCH SOCIETY
SYMPOSIUM PROCEEDINGS XVIII PARTI: ION-IMPLANTATION DAMAGE IN
SEMICONDUCTORS MODELING OF EXTENDED DEFECTS IN SILICON 3 M.E. LAW, K.S.
JONES, S.U. EARLES, A.D. LILAK, AND J-W. XU TRANSIENT-ENHANCED
DIFFUSION OF DOPANTS IN PREAMORPHIZED SI LAYERS 11 A. CLAVERIE, C.
BONEFOS, M. OMRI, B. DE MAUDUIT, Q. BEN ASSAYAG, A. MARTINEZ, D.
ALQUIER, AND D. MATHIOT TRANSIENT-ENHANCED DIFFUSION OF BORON IN
SILICON: THE INTERSTITIAL FLUX 23 T.W. SIMPSON, R.D. GOLDBERG, I.V.
MITCHELL, AND J-M. BARIBEAU EFFECT OF ENERGY AND DOSE ON
TRANSIENT-ENHANCED DIFFUSION AND DEFECT MICROSTRUCTURE IN
LOW-ENERGY-HIGH-DOSE AS + - IMPLANTED SI 29 V. LIRISHNAMOORTHY, D.
VENABLES, K. MOELLER, K.S. JONES, AND B. FREER MODELING OF DISLOCATION
LOOP GROWTH AND TRANSIENT- ENHANCED DIFFUSION IN SILICON FOR AMORPHIZING
IMPLANTS 35 ALP H. QENCER AND SCOTT T. DUNHAM BORON TRANSIENT-ENHANCED
DIFFUSION IN HEAVILY PHOSPHORUS- DOPED SILICON 41 M.B. HUANG, U. MYIER,
T. W. SIMPSON, P.J. SIMPSON, AND I. V. MITCHELL RAMAN SPECTROSCOPY OF
ION-IMPLANTED SILICON 47 DAVID D. TUSCHEL AND JAMES P. LAVINE DEFECT
DIFFUSION DURING ANNEALING OF LOW-ENERGY ION-IMPLANTED SILICON 53 P.J.
BEDROSSIAN, M-J. CATURLA, AND T. DIAZ DE LA RUBIA AB INITIO
PSEUDOPOTENTIAL CALCULATIONS OF CARBON IMPURITIES IN SI 59 JING ZHU, T.
DIAZ DE LA RUBIA, AND CHRISTIAN MAILHIOT EFFECTS OF INTERSTITIAL
CLUSTERING ON TRANSIENT-ENHANCED DIFFUSION OF BORON IN SILICON 65 S.
SOLMI AND S. VALMORRI INVITED PAPER V *LON-BEAM-LNJECTED POINT DEFECTS
IN CRYSTALLINE SILICON: MIGRATION, INTERACTION, AND TRAPPING PHENOMENA
71 F. PRIOLO, V. PRIVITERA, S. COFFA, AND S. LIBERTINO THE EFFECT OF
IMPURITY CONTENT AND ION MASS ON THE DEPTH PROFILES OF VACANCY-TYPE
DEFECTS IN MEV-LMPLANTED SI 83 S. LIBERTINO, S. COFFA, V. PRIVITERA, AND
F. PRIOLO DIFFUSE X-RAY SCATTERING STUDY OF DEFECTS CREATED BY KEV ION
IMPLANTS IN SI 89 P.J. PARTYKA, R.S. AVERBACK, *. TIORDLUND, I.*.
ROBINSON, D. WALKO, P. EHRHART, *. DIAZ DE LA RUBIA, AND M. TANG EFFECTS
OF VACANCY-TYPE DEFECTS ON ELECTRICAL ACTIVATION OF P+ IMPLANTED INTO
SILICON 95 M. WATANABE, T. KITANO, S. ASADA, A. UEDONO, T. MORIYA, T.
KAWANO, S. TANIGAWA, R. SUZUKI, T. OHDAIRA, AND T. MIKADO MODELING OF
DAMAGE EVOLUTION DURING ION IMPLANTATION INFO SILICON: A MONTE CARLO
APPROACH 101 S. TIAN, M. MORRIS, S.J. MORRIS, B. OBRADOVIC, AND A.F.
TASCH AN ELECTRONIC STOPPING POWER MODEL IN SINGLE-CRYSTAL SILICON FROM
A FEW KEV TO SEVERAL MEV 107 S.J. MORRIS, B. OBRADOVIC, S-H. YANG, A.F.
TASCH, AND L. RUBIN HEAT AND MASS TRANSPORT INDUCED BY COLLISION
CASCADES 113 A. CARO, M. ALURRALDE, R. SALIBA, AND M. CARO MASK-EDGE
DISTRIBUTIONS PRODUCED BY 80 KEV AS + ION IMPLANTATION INTO SI 119 D.
DANAILOV, D. KARPUZOV, A. ALMAZOUZI, P. DE ALMEIDA, AND M. VICTORIA DOSE
RATE EFFECTS DURING DAMAGE ACCUMULATION IN SILICON 125 M-J. CATURIA AND
T. DIAZ DE LA RUBIA CHARGE-STATE DEFECT ENGINEERING OF SILICON DURING
ION IMPLANTATION 131 R.A. BROWN, J. RAVI, Y. EROKHIN, O.A. ROZGONYI, AND
C. W. WHITE KINETICS OF INTRINSIC AND DOPANT-ENHANCED SOLID-PHASE
EPITAXY IN BURIED AMORPHOUS SI LAYERS 137 J.C. MCCALLUM ANNEALING
PROPERTIES OF DEFECTS IN BF 2+ -IMPLANTED SI 143 T. KITANO, M. WATANABE,
A. YAOITA, S. OGURO, A. UEDONO, T. MORIYA, S. TANIGAWA, T. KAWANO, R.
SUZUKI, T. OHDAIRA, AND T. MIKADO COMPETITION BETWEEN GETTERING BY
IMPLANTATION-INDUCED CAVITIES IN SILICON AND INTERNAL GETTERING
ASSOCIATED WITH SI02 PRECIPITATION 149 S.A. MCFIUGO, E.R. WEBER, S.M.
MYERS, AND O.A. PETERSEN INVITED PAPER VI SECONDARY DEFECT FORMATION
AND GETTERING IN MEV SELF-IMPLANTED SILICON 155 R.A. BROWN, O.
KONONCHUK, Z. RADZIMSKI, O.A. ROZGONYI, AND F. GONZALEZ ELECTRONIC
STRUCTURE AND GATE CAPACITANCE-VOLTAGE CHARACTERISTICS OF MBE SILICON
5-FETS 161 J.E. MANZOLI AND O. HIPOLITO ION-BEAM SYNTHESIS OF SIC/SI
HETEROSTRUCTURES BY MEVVA IMPLANTATION 167 S.P. WONG, L.C. HO, DIHU
CHEN, W.S. QUO, H. YAN, AND R.W.M. KWOK SIC PRECIPITATE FORMATION DURING
HIGH-DOSE CARBON IMPLANTATION INTO SILICON 173 J.TI.N. LINDNER, TI.
VOLZ, AND B. STRITZKER CONDUCTIVE TUNGSTEN-BASED LAYERS SYNTHESIZED BY
ION IMPLANTATION INTO 6H-SILICON CARBIDE 179 TI. WEISHART, J. SCHOENEICH,
M. VOELSKOW, AND W. SKORUPA VACANCY-TYPE DEFECTS IN ELECTRON AND PROTON
IRRADIATED LL-VI COMPOUNDS 185 S. BRUNNER, W. PUFF, P. MASCHER, A.O.
BALOGH, AND TI. BAUMANN ELEVATED-TEMPERATURE IMPLANTATION OF GAAS WITH
SI IONS 191 R.A. BROWN AND J.S. WILLIAMS AMORPHIZATION MECHANISMS IN AL
X GAI. X AS 197 B.W. LAGOW, B.A. TURKOT I.M. ROBERTSON, L.E. REHN, P.M.
BALDO, S.D. ROH, D.V. FORBES, AND J.J. COLEMAN ELECTRON-BEAM ENHANCED
PRECIPITATION IN HIGHLY CARBON- DOPED GAAS LAYERS 203 P. WERNER, U.
OOESELE, AND TI. KOHDA INTERACTION OF CAVITIES AND DISLOCATIONS IN
SEMICONDUCTORS 209 D.M. FOLLSTAEDT, S.M. MYERS, S.R. LEE, J.L. RENO,
R.L. DAWSON, AND J. HAN GERMANIUM REDISTRIBUTION PHENOMENA IN THE
SYNTHESIS OF SIGE LAYERS 215 C.J. PATEI AND J.B. BUTCHER ION-BEAM
MODIFICATION OF CLUSTER-COVERED SILICON SURFACES 221 O.V. QULKO AND M.T.
ZINKE-ALLMANG MICROSTRUCTURAL OBSERVATION OF FOCUSED ION-BEAM
MODIFICATION OF NI SILICIDE/SI THIN FILMS 227 MIYOKO TANAKA, KAZUO
FURUYA, AND TETSUYA SAITO VUE GROWTH OF GEI-XCX ALLOYS ON SI BY COMBINED
LOW-ENERGY ION-BEAM AND MOLECULAR-BEAM-EPITAXY METHOD 233 *. SHIBATA, S.
KIMURA, P. FONS, A. YAMADA, Y. MAKITA, A. OBARA, N. KOBAYASHI, H.
TAKAHASHI, H. KATSUMATA, J. TANABE, AND S. UEKUSA FORMATION AND
CHARACTERISTICS OF COSI 2 LAYERS SYNTHESIZED BY MEWA IMPLANTATION 239
S.P. WONG, QICAI PENG, W.Y. CHEUNG, W.S. QUO, J.B. XU, L.H. WILSON, S.K.
HARK, * MORTON, AND S.S. LAU ELECTRICAL RESISTIVITY OF COPPER FILMS BY
PARTIALLY IONIZED BEAM DEPOSITION 245 S. HAN, K.H. YOON, K.H. KIM, *.*.
JANG, S.C. CHOI, H-J. JUNG, AND S.K. KOH X-RAY PHOTOELECTRON
SPECTROSCOPY INVESTIGATION OF THE INTERACTION OF NF 3 WITH SILICON 251
T.W. LITTLE AND P.S. OHUCHI THERMAL STABILITY OF CU FILMS ON
TIN/TI/SI(100) BY PARTIALLY IONIZED BEAM DEPOSITION 257 *.*. JANG H.H.
KIM, D.J. CHOI, S. HAN, S.C. CHOI, W.K. CHOI, H-J. JUNG, AND S.K. KOH
EFFECT OF ARGON ION BOMBARDMENT ON THE STABILITY OF NARROW COBALT
SILICIDE/POLYSILICON STRUCTURE 263 JER-SHEN MAA AND CHIEN-HSIUNG PENG
INVESTIGATIONS OF PLASMA IMMERSION ION IMPLANTATION HYDROGENATION FOR
POLY-SI TFTS USING AN INDUCTIVELY- COUPLED PLASMA SOURCE 269 YUANZHONG
ZHOU, SHU QIN, AND CHUNG CHAN PART II: RADIATION DAMAGE IN METALS IN
SITU ION-BEAM RESEARCH IN ARGONNE S INTERMEDIATE VOLTAGE ELECTRON
MICROSCOPE 277 CHARLES W. ALLEN AND EDWARD A. RYAN ON THE DETERMINATION
OF LOOP NATURE IN THE *** 289 M.L. JENKINS, H. PUKUSHIMA, AND M.A. KIRK
CASCADE DEFECTS BEYOND THE PRIMARY DAMAGE STATE 301 H.L. HEINISCH THE
EFFECT OF TEMPERATURE ON DEFECT PRODUCTION BY DISPLACEMENT CASCADES IN
A-LRON 307 P. QAO, D.J. BACON, P.E.J. PLEWITT, AND T.A. LEWIS INVITED
PAPER VIII TRANSMISSION ELECTRON MICROSCOPY STUDY IN SIFU OF
RADIATION-INDUCED DEFECTS IN COPPER AT ELEVATED TEMPERATURES 313 T.L.
DAULTON, M.A. KIRK, AND L.E. REHN DEFECT CLUSTER STRUCTURE AND TENSILE
PROPERTIES OF COPPER SINGLE CRYSTALS IRRADIATED WITH 600 MEV PROTONS 319
YONG DAL AND MAX VICTORIA EFFECTS OF THE SURFACE ON DISPLACEMENT
CASCADES PRODUCED BY HEAVY-ION IRRADIATION OF NI 3 AI AND CU 3 AU 325 S.
MUELLER, M.L. JENKINS, * ABROMEIT, AND TI. WOLLENBERGER HIGH-RESOLUTION
TRANSMISSION ELECTRON MICROSCOPY OF DEFECT CLUSTERS IN ALUMINUM DURING
ELECTRON AND ION IRRADIATION AT ROOM TEMPERATURE 331 KAZUO FURUYA, MIN
PIAO, RIOBUHIRO ISHIKAWA, AND TETSUYA SAITO IN SITU IRRADIATION STUDIES
ON THE EFFECTS OF HELIUM ON THE MICROSTRUCTURAL EVOLUTION OF
V-3.8CR-3.9TI 337 N. DORAISWAMY, B. KESTEL, AND D.E. ALEXANDER
MICROSTRUCTURE OF V-4CR-4TI FOLLOWING LOW-TEMPERATURE NEUTRON
IRRADIATION 343 P.M. RICE, L.L. SNEAD, D.J. ALEXANDER, AND S.J. ZINKLE
EFFECTS OF HEAVY-ION IRRADIATION ON MICROSTRUCTURE OF V-4CR-4TI ALLOY AT
MODERATE TEMPERATURES 349 J. OAZDA, U.M. CHUNG, B.A. LOOMIS, AND M.
MESHII PLASTIC FLOW INDUCED BY SINGLE-ION IMPACTS ON GOLD 355 R.C.
BIRTCHER AND S.E. DONNELLY SURFACE TOPOGRAPHY OF THIN AU AND PD FILMS
AFTER ION BOMBARDMENT STUDIED WITH STM 361 K.P. REIMANN, A. REHMET, W.
BOISE, AND U. OEYER MOLECULAR-DYNAMICS SIMULATION OF CASCADE DAMAGE IN
GOLD 367 E. ALONSO, M.J. CATURLA, M. TANG, TI. HUANG, AND T. DIAZ DE LA
RUBIA SHORT- AND LONG-RANGE ORDERING OF (NIO.67CR 0 .33)I- X FEX ALLOYS
UNDER ELECTRON IRRADIATION 373 E. FRELY, B. BEUNEU, A. BARBU, AND O.
JASKIEROWICZ ATOM TRANSPORT IN NICKEL BY DISPLACEMENT CASCADES FOR
SPATIALLY DEPENDENT DISPLACEMENT RATE AND SINK STRENGTH 379 TI.
WOLLENBERGER, P. FIELITZ, M-P. MACHT, AND V. RIAUNDORF MONTE CARLO
SIMULATION OF CLUSTER GROWTH AND DEFECT ANNEALING 383 A. V. FEDOROV, A.
VAN VEEN, AND J.TH. DE HOSSON IX COMPUTER SIMULATION OF THE MIGRATION OF
SELF-INTERSTITIAL ATOMS IN ALPHA-ZIRCONIUM 389 B.J. WHITING AND D.J.
BACON COMPUTER SIMULATION OF DISPLACEMENT CASCADES IN A-ZIRCONIUM 395 F.
QAO, S.J. WOODING, D.J. BACON, A.F. CALDER, AND L.M. HOWE
MICROSTRUCTURAL KINETICS IN ALLOYS UNDERGOING TRANSMUTATIONS:
APPLICATION TO AIC NEUTRON ABSORBERS 401 C. DESGRANGES, Q. MARTIN, AND
F. DEFOORT NITROGEN VACANCY COMPLEXES IN NITROGEN-IRRADIATED METALS 407
A. VAN VEEN, K.T. WESTERDUIN, TL. SCHUT, E.J.E. MELKER, B.J. THIJSSE, B.
RIIELSEN, P. ASOHA KUMAR, V.J. QHOSH, AND *. *. LYNN MIXING OF AL INTO
URANIUM SILICIDE REACTOR FUELS 413 FU-RONG DING, R.C. BIRTCHER, B.J.
KESTEL, AND P.M. BALDO ION-BEAM MIXING AND SOLID-STAFE REACTION IN ZR-FE
MULTILAYERS 419 A. FAESANO, JR., A.T. MOTTA, R.C. BIRTCHER, E.A. RYAN,
S.R. TEIXEIRA, M.E. BRUCKMANN, AND L. AMARAL IRRADIATION-INDUCED
CHANGES IN THE MECHANICAL PROPERTIES AND MICROSTRUCTURES OF
SOLUTION-ANNEALED AUSTENITIC STAINLESS STEEL AT LOW TO INTERMEDIATE
TEMPERATURES 425 O.E. LUCAS DEFECT MICROSTRUCTURES AND DEFORMATION
MECHANISMS IN IRRADIATED AUSTENITIC STAINLESS STEELS 437 S.M. BRUEMMER,
J.I. COLE, R.D. CARTER, AND Q.S. WAS THE DEPENDENCE OF PROTON-IRRADIATED
MICROSTRUCTURE ON DOSE, TEMPERATURE, AND COMPOSITION OF AUSTENITIC
STAINLESS STEELS 445 J. QAN, T. ALLEN, AND Q.S. WAS MICROSTRUCTURE
EVOLUTION OF SELECTED FERRITIC-MARTENSITIC STEELS UNDER DUAL-BEAM
IRRADIATION 451 RIELJA WANDERKA, ERIC CAMUS, AND HEINRICH WOLLENBERGER
*ON THE COMPOSITION AND STRUCTURE OF NANOPRECIPITATES IN IRRADIATED
PRESSURE-VESSEL STEELS 457 Q.R. ODETTE, C.L. LIU, AND B.D. WIRTH
*MICROSTRUCTURE AND MODELING OF RPV EMBRITTLEMENT 471 C.A. ENGLISH, W.J.
PHYTHIAN, AND R.J. MCELROY INVITED PAPER X NEUTRON DAMAGE IN REACTOR
PRESSURE-VESSEL STEEL EXAMINED WITH POSITRON ANNIHILATION LIFETIME
SPECTROSCOPY 483 STEPHEN E. CUMBLIDGE, ARTHUR T. MOTTA, AND OARY L.
CATCHEN SMALL-ANGLE NEUTRON SCATTERING MODELING OF COPPER-RICH
PRECIPITATES IN STEEL 489 STEPHEN SPOONER COMPUTER SIMULATION STUDY OF
THE EFFECTS OF COPPER PRECIPITATES ON DISLOCATION CORE STRUCTURE IN
FERRITIC STEELS 495 T. HARRY AND D.J. BACON SPECIFIC EFFECTS OF THE
DISPLACEMENT CASCADES ON THE KINETICS OF PRECIPITATION OF COPPER IN IRON
503 A. BARBU, D. LESUEUR, AND J. DURAL CLUSTERING OF POINT DEFECTS UNDER
ELECTRON IRRADIATION IN DILUTE IRON ALLOYS AND AN IRON MANGANESE NICKEL
ALLOY 509 A. HARDOULN-DUPARC AND A. BARBU INFLUENCE OF THE IRRADIATION
TEMPERATURE ON THE FORMATION OF DEFECTS IN REACTOR PRESSURE-VESSEL
STEELS 515 M. QROSSE, A. TLEMPEL, J. BOEHMERT, Q. BRAUER, AND F.M. TLAGGAG
COMPUTER SIMULATION STUDY OF THE EFFECTS OF COPPER SOLUTES ON CASCADE
DAMAGE IN FE-CU ALLOYS 521 A.F. CALDER AND D.J. BACON RADIATION-INDUCED
SEGREGATION IN ALLOY X-750 527 E.A. KENIK A COMPARISON OF GRAIN BOUNDARY
MONOLAYER SEGREGATION MEASUREMENTS MADE USING FEGSTEM AND AUGER
SPECTROSCOPY 533 S.B. FISHER, P. SPELLWARD, K. SCOWEN, AND B. LEE
MODELING OF RADIATION-INDUCED SEGREGATION IN AUSTENITIC FE-CR-NI ALLOYS
539 T.R. ALLEN AND G.S. WAS COMPARATIVE STUDY ON INTERGRANULAR
SEGREGATION OF SULFUR AND PHOSPHORUS INDUCED DURING NEUTRON IRRADIATION
AND THERMAL AGING IN VANADIUM-20 WT% TITANIUM ALLOYS 545 *.*. BLOOMER,
D.Y. LYU, AND J. KAMEDA EFFECTS OF ION IMPLANTATION AND TEMPERATURE ON
RADIATION-INDUCED SEGREGATION IN NI-9AI ALLOYS 551 M.J. QIACOBBE, N.Q.
LAM, F.R. OKAMOTO, N.J. ZALUZEC, AND J.F. STUBBINS REFINEMENT OF
IRRADIATION AND ANALYSIS TECHNIQUES FOR RADIATION-INDUCED SEGREGATION
557 T.R. ALLEN, J.M. COOKSON, D.L. DAMCOTT, AND Q.S. WAS DOSE DEPENDENCE
OF RADIATION-INDUCED SEGREGATION IN PROTON-IRRADIATED AUSTENITIC ALLOYS
563 J.T. BUSBY, T.R. ALLEN, R.D. CARTER, E.A. KENIK, AND G.5. WAS
RADIATION-INDUCED MINOR ELEMENT SEGREGATION AT AUSTENITIC STAINLESS
STEEL GRAIN BOUNDARIES 569 E.P. SIMONEN AND S.M. BRUEMMER
RADIATION-INDUCED SEGREGATION OF METALS AT MOVING SI0 2 -AMORPHOUS SI
INTERFACES 575 J.S. WILLIAMS, M. PETRAVIC, M. CONWAY, AND K.T. SHORT
PART III: RADIATION DAMAGE IN CERAMICS AMORPHIZATION OF CERAMIC
MATERIALS BY ION-BEAM IRRADIATION: PARALLELS TO GLASS FORMATION 583 L.M.
WANG, S.X. WANG, W.L. OONG, AND *.*. EWING THRESHOLD IRRADIATION DOSE
FOR AMORPHIZATION OF SILICON CARBIDE 595 L.L. SNEAD AND S.J. ZINHLE
RADIATION EFFECTS IN GLASS WASTE FORMS FOR HIGH-LEVEL WASTE AND
PLUTONIUM DISPOSAL 607 W.J. WEBER AND R.C. EWING ION IRRADIATION-INDUCED
AMORPHIZATION IN THE MGO-AL203-SI0 2 SYSTEM: A CASCADE QUENCHING MODEL
619 S.X. WANG, L.M. WANG, AND R.C. EWING BEHAVIOR OF ZIRCONIA-BASED FUEL
MATERIAL UNDER XE IRRADIATION 625 C. DEGUELDRE, P. HEIMGARTNER, O.
LEDERGERBER, *. SASAJIMA, *. TLOJOU, *. MUROMURA, L. WANG, W. OONG, AND
R. EWING MODELING AMORPHIZATION OF TETRAHEDRAL STRUCTURES USING LOCAL
APPROACHES 633 * ESTHER JESURUM, VINAY PULIM, BONNIE BERGER, AND LINN W.
HOBBS HRTEM OF EXTENDED DEFECTS IN TL-2212 THIN FILMS 639 P.P. NEWCOMER,
E.L. VENTURINI, *. SCHOENE, B.L. DOYLE, AND K.E. MYERS THERMAL NEUTRON
IRRADIATION OF LINB0 3 CRYSTALS DOPED WITH HF AND HF.MG 645 J.O.
MARQUES, A. RILING, J.* SOARES, M.F. DA SILVA, E. DIEGUEZ, AND F.
AGULLOE-LOEPEZ FORMATION OF ALKALI METAL LAYERS AT THE SURFACE OF
ELECTRON-IRRADIATED ALKALI HALIDES 651 E. PAPARAZZO, *. ZEMA, AND L.
MORETTO INVITED PAPER XII PART IV: RADIATION EFFECTS IN POLYMERS
NONDESTRUCTIVE OPTICAL CHARACTERIZATION OF RADIATION-HARDENED POLYIMIDE
FILMS 659 RANDY LOGAN, A.A. MAZNEV, KEITH A. NELSON, AND J. MEGUSAR
PARTV: BEAM-INDUCED EFFECTS IRRADIATION SPECTRUM AND LONIZATION-LNDUCED
DIFFUSION EFFECTS IN CERAMICS 667 S.J. ZINKTE PARTICLE-INDUCED AND
PHOTOCONDUCTIVITIES IN AMORPHOUS SI:H UNDER PROTON IRRADIATION 679 *.
KISHIMOTO, FL. AMEKURA, K. KONO, AND T. SAITO ELECTRON-BEAM DRIVEN
DISORDERING IN SMALL PARTICLES 685 RICHARD R. VANFLEET AND JACK MOCHEL
DETERMINATION OF THE ELECTRON-BEAM-INDUCED SHRINKAGE RATES OF ISOLATED
AMORPHOUS ZONES IN GERMANIUM 691 /. JENCIC, I.M. ROBERTSON, AND J.
SKVARC ELECTRON-IRRADIATION-INDUCED CRYSTALLIZATION OF AMORPHOUS
ORTHOPHOSPHATES 697 A. MELDRUM, L.A. BOATNER, AND R.C. EWING 1.8 MEV
ELECTRON BOMBARDMENT-INDUCED STRUCTURAL CHANGES ON GRAPHITE SURFACES
OBSERVED BY SCANNING TUNNELING MICROSCOPY 703 Y.J. CHEN, I.TI. WILSON,
LIN LIBIN, AND J.B. XU ELECTRON AND X-RAY PHOTON RADIATION EFFECTS ON
SURFACES OF LEAD SILICATE GLASSES 709 PAUL W. WANG RADIATION EFFECTS OF
VACUUM ULTRAVIOLET LASER PHOTONS ON SILICON DIOXIDE 715 K. KUROSAWA,
P.R. HERMAN, E.Z. KURMAEV, S.N. SHAMIN, V.E. QALAKHOV, Y. TAKIGAWA, W.
SASAKI, AND A. YOKOTANI DEFECTS AND PHASE CHANGE INDUCED BY GIANT
ELECTRONIC EXCITATIONS WITH GEV IONS AND 30 MEV CLUSTER BEAM 721 P.
THEVENARD, M. BERANGER, B. CANUT, S.M.I4. RAMOS, *. BONARDI, AND O.
FUCHS AUTHOR INDEX 727 SUBJECT INDEX 731 INVITED PAPER XIII
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any_adam_object | 1 |
building | Verbundindex |
bvnumber | BV011523145 |
callnumber-first | T - Technology |
callnumber-label | TA418 |
callnumber-raw | TA418.6 |
callnumber-search | TA418.6 |
callnumber-sort | TA 3418.6 |
callnumber-subject | TA - General and Civil Engineering |
classification_rvk | UD 8400 |
ctrlnum | (OCoLC)36327560 (DE-599)BVBBV011523145 |
dewey-full | 620.1/1228 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 620 - Engineering and allied operations |
dewey-raw | 620.1/1228 |
dewey-search | 620.1/1228 |
dewey-sort | 3620.1 41228 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik |
format | Book |
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genre | (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content |
genre_facet | Konferenzschrift 1996 Boston Mass. |
id | DE-604.BV011523145 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:11:11Z |
institution | BVB |
isbn | 1558993436 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007754700 |
oclc_num | 36327560 |
open_access_boolean | |
owner | DE-384 DE-703 DE-83 |
owner_facet | DE-384 DE-703 DE-83 |
physical | XVII, 733 S. Ill., graph. Darst. |
publishDate | 1997 |
publishDateSearch | 1997 |
publishDateSort | 1997 |
publisher | MRS |
record_format | marc |
series | Materials Research Society: Materials Research Society symposia proceedings |
series2 | Materials Research Society: Materials Research Society symposia proceedings |
spelling | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Ian M. Robertson ... Pittsburgh, Pa. MRS 1997 XVII, 733 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 439 Materials Effect of radiation on Congresses Metals Effect of radiation on Congresses Microstructure Congresses Polymers Effect of radiation on Congresses Semiconductors Effect of radiation on Congresses Mikrostruktur (DE-588)4131028-7 gnd rswk-swf Bestrahlung (DE-588)4144952-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content Mikrostruktur (DE-588)4131028-7 s Bestrahlung (DE-588)4144952-6 s DE-604 Robertson, Ian M. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 439 (DE-604)BV001899105 439 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007754700&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Materials Effect of radiation on Congresses Metals Effect of radiation on Congresses Microstructure Congresses Polymers Effect of radiation on Congresses Semiconductors Effect of radiation on Congresses Mikrostruktur (DE-588)4131028-7 gnd Bestrahlung (DE-588)4144952-6 gnd |
subject_GND | (DE-588)4131028-7 (DE-588)4144952-6 (DE-588)1071861417 |
title | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
title_auth | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
title_exact_search | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
title_full | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Ian M. Robertson ... |
title_fullStr | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Ian M. Robertson ... |
title_full_unstemmed | Microstructure evolution during irradiation symposium held December 2 - 5, 1996, Boston, Massachusetts, USA ed.: Ian M. Robertson ... |
title_short | Microstructure evolution during irradiation |
title_sort | microstructure evolution during irradiation symposium held december 2 5 1996 boston massachusetts usa |
title_sub | symposium held December 2 - 5, 1996, Boston, Massachusetts, USA |
topic | Materials Effect of radiation on Congresses Metals Effect of radiation on Congresses Microstructure Congresses Polymers Effect of radiation on Congresses Semiconductors Effect of radiation on Congresses Mikrostruktur (DE-588)4131028-7 gnd Bestrahlung (DE-588)4144952-6 gnd |
topic_facet | Materials Effect of radiation on Congresses Metals Effect of radiation on Congresses Microstructure Congresses Polymers Effect of radiation on Congresses Semiconductors Effect of radiation on Congresses Mikrostruktur Bestrahlung Konferenzschrift 1996 Boston Mass. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007754700&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV001899105 |
work_keys_str_mv | AT robertsonianm microstructureevolutionduringirradiationsymposiumhelddecember251996bostonmassachusettsusa |