Control of semiconductor surfaces and interfaces: symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A.
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Pittsburgh, Pa.
Materials Research Soc.
1997
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| Series: | Materials Research Society: Materials Research Society symposia proceedings
448 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Physical Description: | XIII, 505 S. graph. Darst. |
| ISBN: | 1558993525 |
Staff View
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Record in the Search Index
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 448 CONTROL OF
SEMICONDUCTOR SURFACES AND INTERFACES SYMPOSIUM HELD DECEMBER 2-5,1996,
BOSTON, MASSACHUSETTS, U.S.A. EDITORS: S.M. PROKES NAVAL RESEARCH
LABORATORY WASHINGTON, D.C., U.S.A. O.J. GLEMBOCKI NAVAL RESEARCH
LABORATORY WASHINGTON, D.C., U.S.A. S.K. BRIERLEY RAYTHEON COMPANY
ANDOVER, MASSACHUSETTS, U.S.A. J.M. GIBSON UNIVERSITY OF ILLINOIS,
URBANA URBANA, ILLINOIS, U.S.A. J.M. WOOD * IJ PURDUE UNIVERSITY WEST
LAFAYETTE, INDIANA, U.S.A. MATERIALS RESEARCH SOCIETY PITTSBURGH,
PENNSYLVANIA CONTENTS PREFACE XIII MATERIALS RESEARCH SOCIETY SYMPOSIUM
PROCEEDINGS XIV PARTI: CHEMICAL MODIFICATION OF SURFACES CHEMICALLY
STABLE SEMICONDUCTOR SURFACE LAYERS USING LOW-TEMPERATURE GROWN GAAS 3
D.B. JANES, S. HONG, V.R. KOLAGUNTA, D. MCLNTURFF, T-B. NG, R.
REIFENBERGER, S.D. WEST, AND J.M. WOODALL SURFACE RECONSTRUCTION AND
MORPHOLOGY OF HYDROGEN SULFIDE TREATED GAAS(OOL) SUBSTRATE 15 JUN SUDA,
YOICHI KAWAKAMI, SHIZUO FUJITA, AND SHIGEO FUJITA IMPROVEMENT OF
INGAP/GAAS HETEROINTERFACE QUALITY BY CONTROLLING ASH/* FLOW CONDITIONS
21 YOSHINO K. FUKAI, FUMIAKI HYUGA, TAKUMI NITTONO, KAZUO WATANABE, AND
HIROHIKO SUGAHARA PROCESSING OF INP AND GAAS SURFACES BY HYDROGEN AND
OXYGEN PLASMAS: IN SITU REAL-TIME ELLIPSOMETRIC MONITORING 27 M.
LOSURDO, P. CAPEZZUTO, AND Q, BRUNO CHARACTERIZATION OF GAAS SURFACES
SUBJECTED TO A CL 2 /AR HIGH-DENSITY PLASMA-ETCHING PROCESS 33 CR. EDDY,
JR., O.J. OLEMBOCKI, V.A. SHAMAMIAN, D. LEONHARDT, R.T. HOLM, J.E.
BUTLER, B.D. THORNS, S.W. PANG, K.K. **, E.W. BERG, AND C.E. STUTZ CL 2
PLASMA ETCHING OF SI(100): SURFACE CHEMISTRY AND DAMAGE 39 N. LAYADI,
V.M. DONNELLY, AND J.T.C LEE THEORY OF REACTIVE ADSORPTION ON SI(100) 45
D.J. DOREN, A. ROBINSON BROWN, AND R. KONECNY NONRADIATIVE RECOMBINATION
ON SI SURFACES DURING ANODIC OXIDATION IN FLUORIDE SOLUTION 51 J.
RAPPICH, V. YU. TIMOSHENKO, AND TH. DITTRICH ADVANCED LITHOGRAPHY FOR
NANOFABRICATION 57 FRANK Y.C HUI AND QYULA ERES IN SITU INFRARED
OBSERVATION OF HYDROGENATION, OXIDATION, AND ADSORPTION ON SILICON
SURFACES IN SOLUTIONS 63 YOSHIHIRO SUGITA AND SATORU WATANABE INVITED
PAPER V ANALYSIS OF INP PASSIVATED WITH THIOUREA/AMMONIA SOLUTIONS AND
THIN CDS FILMS 69 U.M. DAUPLAISE, A. DAVIS, K. VACCARO, W.D. WATERS,
S.M. SPAZIANI, *.*. MARTIN, AND J. P. LORENZO SURFACE OXIDATION STUDY OF
SILICON-DOPED GAAS WAFERS BY FTIR SPECTROSCOPY 75 R-H. CHANG, M.
AL-SHEIKHLY, A. CHRISTOU, AND * VARMAZIS CHEMICAL CHARACTERIZATION BY
FT-IR SPECTROMETRY AND MODIFICATION OF THE VERY FIRST ATOMIC LAYER OF A
**2 NANOSIZED POWDER 81 M-I. BARATON, L. MERHARI, F. CHANCEL, AND J.
TRIBOUT IN SITU ETCH TO IMPROVE CHEMICAL BEAM EPITAXY REGROWN
AIGAAS/GAAS INTERFACES FOR HBT APPLICATIONS 87 Y.M. TISIN, RI.Y. LI,
C.W. TU, AND P.M. ASBECK PART II: CONTROL OF GROWTH I: SURFACES AND
INTERFACES ULTRAHIGH VACUUM SCANNING TUNNELING MICROSCOPY OBSERVATION OF
MULTILAYER STEP STRUCTURE ON GAAS AND ALAS VICINAL SURFACE GROWN BY
METALORGANIC VAPOR-PHASE EPITAXY 95 JUN-YA ISHIZAKI, YASUHIKO ISHIKAWA,
AND TAKASHI FUKUI IN SITU OPTICAL OBSERVATION AND CONTROL OF INITIAL
STAGES OF GAAS GROWTH ON CAF2 SURFACE MODIFIED BY ELECTRON BEAM
IRRADIATION 101 K. KAWASAKI AND K. TSUTSUI FORMATION OF ZNSE/GAAS
HETEROVALENT HETEROSTRUCTURES BY MOVPE 107 MITSURU FUNATO, SATOSHI AOKI,
SHIZUO FUJITA, AND SHIGEO FUJITA ATOMIC HYDROGEN-ASSISTED GROWTH OF
SI-GE HETEROSTRUCTURES ON (001 )SI 113 J-M. BARIBEAU, D.J. LOCKWOOD,
S.J. ROLFE, R. W. Q. SYME, AND N.J. LABBE SURFACE REACTIONS DURING THE
DEPOSITION OF GE FROM CHEMICAL SOURCES ON GE(100)-(2XL) 119 C. MICHAEL
OREENIIEF AND JIHONG CHEN PHYSICS AND CONTROL OF SI/GE HETEROINTERFACES
125 S. FUKATSU, N. USAMI, H. SUNAMURA, Y. SHIRAKI, AND R. ITO
SURFACTANT-MEDIATED SI/GE EPITAXIAL CRYSTAL GROWTH 135 EUNJA KIM, CHAN
WUK OH, AND YOUNG *** LEE GROWTH OF ZNSE-BASED COMPOUNDS ON
GE-TERMINATED GAAS SURFACE 141 T. SAITOH, A. TSUJIMURA, T. RIISHIKAWA,
A. WATAKABE, AND Y. SASAI INVITED PAPER VI ANISOTROPY IN ATOMIC-SCALE
INTERFACE STRUCTURE AND MOBILITY IN LNAS/GAI. X LN X SB SUPERLATTICES
147 A.Y. LEW, S.L. ZUO, E.T. YU, AND R.H. MILES INTERFACE ROUGHNESS IN
STRAINED SI/SIGE MULTILAYERS 153 A.A. DARHUBER, V. HOLY, J. STANGI, Q.
BAUER, J. RIUETZEL, AND O. ABSTREITER SURFACE ROUGHENING AND COMPOSITION
MODULATION OF ZNSE- RELATED LL-VI EPITAXIAL FILMS 159 SHIGETAKA TOMIYA,
HIRONORI TSUKAMOTO, SATOSHI ITOH, KAZUSHI TIAKANO, ETSUO MORITA, AND
AKIRA ISHIBASHI DIRECT-BANDGAP QUANTUM WELLS ON GAP 165 JONG-WON LEE,
ALFRED T. SCHREMER, DAN FEKETE, JAMES R. SHEALY, AND JOSEPH M.
BALIANTYNE FORMATION OF LARGE CONDUCTION BAND DISCONTINUITIES OF
HETEROINTERFACES USING CDF 2 AND CAF 2 ON SI(L 11) 171 AKIRA IZUMI,
RIORIYUKI MATSUBARA, YUSUKE KUSHIDA, KAZUO TSUTSUI, AND NIKOLAI S.
SOKOLOV MODIFICATION OF THE SURFACE AND BAND-BENDING OF A SILICON CCD
FOR LOW-ENERGY ELECTRON DETECTION 177 AIMEE L. SMITH, QIUMING YU, S.T.
ELLIOTT, T.A. TOMBRELLO, AND SHOUIEH NIKZAD PARTIM: CONTROL OF GROWTH
II: NANOSTRUCTURE FORMATIONS/SELF-ASSEMBLY COMPARISON OF THE
MORPHOLOGICAL AND OPTICAL CHARACTERISTICS OF INP ISLANDS ON GALNP/GAAS
(311)A AND (100) 187 R.I. PELZEL, CM. REAVES, S.P. DENBAARS, AND W.U.
WEINBERG A SELF-ORGANIZED MOLECULAR BEAM EPITAXIAL GROWTH OF THE
INSB/AIGASB QUANTUM DOTS ON HIGH-INDEX GAAS SUBSTRATES 193 MITSUAKI
YANO, KAZUTO KOIKE, MASATAKA INOUE, TOSHIYA SAITOH, AND TXANJI YOH
STRUCTURAL INVESTIGATIONS OF SELF-ASSEMBLED GE DOTS BY X-RAY DIFFRACTION
AND REFLECTION 199 A.A. DARHUBER, V. HOLY, J. STANGI, O. BAUER, P.
SCHITTENHEIM, AND Q. ABSTREITER ANTIMONY CLUSTER MANIPULATION ON THE
SI(001) SURFACE BY MEANS OF STM 205 /./. KRAVCHENKO, C.T. SAILING, AND
M.Q. LAGALLY DIRECT FORMATION OF FINE STRUCTURE BY LOW-ENERGY FOCUSED
ION BEAM 211 T. CHIKYOW, A. SHIKANAI, AND *. KOGUCHI 1 VII SURFACE
ADSORPTION KINETICS OF GA WIRE ARRAYS ON SI(L 12) 217 S.M. PROKES AND
O.J. OLEMBOCKI SURFACE MORPHOLOGY OF NANOSCALE TISI2 EPITAXIAL ISLANDS
ON SI(OOL) 223 WOOCHUL YANG, F.J. JEDEMA, H. ADE, AND R.J. NEMANICH PART
IV: CONTROL OF GROWTH III: SELECTED AREA EPITAXY STRUCTURAL DEFECTS IN
THICK INGAAS LAYERS GROWN BY LPEE ON PARTIALLY MASKED GAAS SUBSTRATES
231 T. BRYSKIEWICZ FACET FORMATION IN SUBMICRON SELECTIVE GROWTH OF
SI/SIGE 241 K.L. WANG AND DAWEN WANG GALNP SELECTIVE AREA EPITAXY FOR
HETEROJUNCTION BIPOLAR TRANSISTOR APPLICATIONS 253 S.U. PARK, S-L. FU,
P.K.L. YU, AND P.M. ASBECK SELECTIVE GROWTH OF MOVPE ON AIGAAS/GAAS
PATTERNED SUBSTRATES FOR QUANTUM NANOSTRUCTURES 259 MAKOTO SAKUMA,
TAKASHI FUKUI, KAZUHIDE KUMAKURA, AND JUNICHI MOTOHISA SELECTIVE
EPITAXIAL GROWTH OF STRAINED SILICON-GERMANIUM FILMS IN TUBULAR HOT-WALL
LOW-PRESSURE CHEMICAL VAPOR DEPOSITION SYSTEMS 265 I-N. LEE, W-C. WANG,
M.T.K. KOH, J.P. DENTON, E.P. KVAM, O.W. NEUDECK, AND CO. TAKOUDIS
ULTRATHIN SI0 2 MASK LAYER FOR NANOSCALE SELECTIVE- AREA PECVD OF SI 271
J. W. PARK, T. YASUDA, K. IKUTA, L.TI. KUO, S. YAMASAKI, AND K. TANAKA
SOLID-PHASE CRYSTALLIZATION OF LPCVD AMORPHOUS SI FILMS BY NUCLEATION
INTERFACE CONTROL 277 EUI-HOON HWANG AND JAE-SANG RO PARTV: DIELECTRIC
AND SEMICONDUCTOR INTERFACES INTERFACIAL ARSENIC FROM WET OXIDATION OF
AL X GAI. X AS/GAAS: ITS EFFECTS ON ELECTRONIC PROPERTIES AND NEW
APPROACHES TO MIS DEVICE FABRICATION 285 CAROL L.H. ASHBY, JOHN P.
SULLIVAN, PAULA P. NEWCOMER, ***** A. MISSERT, HONG Q. HOU, B.E.
HAMMONS, MICHAEL J. HAFICH, AND ALBERT O. BACA INVITED PAPER VIII
MICROSTRUCTURE AND INTERRACIAL PROPERTIES OF LATERALLY OXIDIZED AL X
GAI. X AS 291 R.D. TWESTEN, D.M. FOLLSTAEDT, AND K.D. CHOQUETTE
NITRIDATION OF SI(L 11)-7 X 7 SURFACE BY LOW-ENERGY NITROGEN IONS: STM
INVESTIGATION 297 JEONG SOOK HA, KANG-HO PARK, WAN SOO YUN, EL-HANG LEE,
AND SEONG-JU PARK THE EFFECT OF PROCESSING CONDITIONS ON THE STRUCTURE
OF BURIED INTERFACES BETWEEN SILICON AND SILICON DIOXIDE 303 XIDONG CHEN
AND J. MURRAY OIBSON SPECTROSCOPIC INVESTIGATION OF LITHIUM
INTERCALATION IN THIN FILMS OF ANATASE TITANIUM DIOXIDE 309 R. VAN DE
KROL, A. QOOSSENS, AND J. SCHOONMAN IMPROVEMENT OF ULTRATHIN OXIDES BY
POSTOXIDATION ANNEALING 315 TOMOYUKI SAKODA, MIEKO MATSUMURA, AND
YASUSHIRO NISHIOKA CHARGE TRAPPING AND DEGRADATION OF HIGH PERMITTIVITY
**2 DIELECTRIC METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTORS 321
HYEON-SEAG KIM, S.A. CAMPBELL, D.C. GILMER, AND D.L. POLLA INTERFACE
PROPERTIES OF SI 3 N 4 /SI/N-GAAS METAL-INSULATOR- SEMICONDUCTOR
STRUCTURES GROWN ON GAAS(L 11)B SUBSTRATE 327 D.O. PARK, D.M. DIATEZUA,
Z. CHEN, S.N. MOHAMMAD, AND H. MORKOC INTERRACIAL LAYER FORMATION OF A
HEAT-TREATED TEOS- BASED OXIDE PREPARED BY A PECVD TECHNIQUE 333 T.J.
LEE, D.S. JEONG, CS. SONG, S.Y. LEE, AND C.H. PARK FIELD EMISSION
THROUGH DIAMOND/MO INTERFACES 339 W.B. CHOI, A.F. MYERS, J.J. CUOMO, AND
J.J. TIREN SUPPRESSION OF SURFACE SI0 2 LAYER AND SOLID-PHASE EPITAXY OF
AMORPHOUSLY DEPOSITED SI FILMS USING HEATING-UP UNDER SI 2 H 6
ENVIRONMENT 345 TAE-TLEE CHOE, SE-JUNE KIM, WOON CHOI, AND TLYOUNG-JUNE
KIM PART VI: METAL/SEMICONDUCTOR INTERFACES: STRUCTURAL AND ELECTRICAL
PROPERTIES HRLEED AND STM STUDY OF MISORIENTED SI(100) WITH AND WITHOUT
A ** OVERLAYER 353 SALIMA YALA AND PEDRO A. MONTANO MICROSTRUCTURAL
STUDIES OF CO SUICIDE LAYERS FORMED ON SIGE AND SIGEC 359 S. JIN, H.
BENDER, R.A. DONATON, K. MAEX, A. VANTOMME, G. LANGOUCHE, A. ST. AMOUR,
AND J. C. STURM THIN FILMS OF COSI 2 CO-DEPOSITED ONTO SII- X GE X
ALLOYS 365 PETER T. QOELLER, BOYAN I. BOYANOV, DALE E. SAYERS, AND
ROBERT J. RIEMANICH SEGREGATION OF COPPER TO (100) AND (111) SILICON
SURFACES IN EQUILIBRIUM WITH INTERNAL CUESI PRECIPITATES 371 W.R. WARN
PIER SURFACE AND INTERFACE ANALYSIS OF THIN-FILM/SI(SUBSTRATE) CONTACTS
BY SXES 377 C. HECK, M. KUSAKA, M. TLIRAI, H. MAKAMURA, M. IWAMI, AND H.
WATABE INVESTIGATION OF CU-GE/GAAS METAL-SEMICONDUCTOR INTERFACES FOR
LOW-RESISTANCE OHMIC CONTACTS 383 SERGE OKTYABRSKY, M.A. BOREK, M.O.
ABOELFOTOH, AND J. HARAYAN ALLOYING BEHAVIOR AND RELIABILITY OF
PT-EMBEDDED METAL/N + -GAAS THIN OHMIC CONTACT SYSTEM 389 C.Y. KIM, W.S.
LEE, H.J. KWON, Y.W. JEONG, J.S. LEE, AND **. WHANG IMPROVEMENT OF THE
REFRACTORY METAL/N-GAAS INTERFACE BY LOW-TEMPERATURE ANNEAL 395 A. SINGH
AND L. VELASQUEZ RELATIONSHIP BETWEEN STRUCTURAL AND ELECTRICAL
PROPERTIES OF ZN-BASED CONTACTS TO P-GAAS: TOWARD THE MECHANISM OF THE
OHMIC CONTACT FORMATION 401 E. KAMINSKA, A. PIOTROWSKA, S. KASJANIUK,
AND S. OIERLOTKA NOVEL METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON
SEMI-INSULATING INDIUM PHOSPHIDE 407 J. W. PALMER AND W.A. ANDERSON
ENHANCED PHOTOYIELD WITH DECREASING FILM THICKNESS ON
METAL-SEMICONDUCTOR STRUCTURES 413 V. HOFFMAN, M. BRAUER, AND M. SCHMIDT
EFFECTS OF THE SUBSTRATE PRETREATMENTS ON THE LEAKAGE CURRENT IN THE
LOW-TEMPERATURE POLY-SI TFTS 419 TAE-KYUNG KIM, BYUNG-IL LEE, TAE-HYUNG
IHN, AND SEUNG-KI JOO MONITORING OF DOPANT ACTIVATION IN SUBSURFACE
P-TYPE SI USING THE SURFACE CHARGE PROFILING (SCP) METHOD 425 P. ROMAN,
J. STAFFA, S. FAKHOURI, J. RUZYLLO, AND E. KAMIENIECKI X A STUDY OF THE
INTERACTION BETWEEN CUSSGE AND (100)SI AND ITS EFFECT ON ELECTRICAL
PROPERTIES 431 *.*. BOREK, S. OKTYABRSKY, M.O. ABOELFOTOH, AND J.
NARAYAN ELECTRICAL CHARACTERIZATION OF IN SCHOTTKY CONTACTS TO EPITAXIAL
N-LNO.46GAO.54P GROWN ON N + -GAAS BY MODVD 437 N. MARCANO AND A. SINGH
CONVERSION TUNNELING IN NONIDEAL SCHOTTKY BARRIERS: VIRTUAL RESONANCE
MANIFESTATION AND INTERFACE STATES INFLUENCE 443 D.A. ROMANOV, A. V.
KALAMEITSEV, A.P. KOVCHAVTSEV, AND L.M. SUBHOTIN PART VII: OPTICAL
CHARACTERIZATION: REAL-TIME AND EX SITU MULTILEVEL APPROACHES TOWARD
MONITORING AND CONTROL OF SEMICONDUCTOR EPITAXY 451 D.E. ASPNES, N.
DLETZ, U. ROSSOW, AND K.J. BACHMANN STRAIN-RELATED EXCITONIC IN-PLANE
OPTICAL ANISOTROPY IN (100)LNGAAS/LNAIAS/LNP MQW 463 A. DIMOULAS, R.
TOBER, R. LEAVITT, T. FENG, AND A. CHRLSTOU BAND LINEUP OF VAN DER
WAALS-EPITAXY INTERFACES 469 R. SCHLAF, *. HOEHER, *. LANG, *. KLEIN, *.
PETTENKOFER, AND W. JAEGERMANN INVESTIGATION OF ELECTRIC FIELDS,
INTERFACE CHARGES, AND CONDUCTION-BAND OFFSETS AT ZNSE/GAAS
HETEROJUNCTIONS WITH A NOVEL PHOTOREFLECTANCE TECHNIQUE 475 D.J.
DOUGHERTY, S.B. FLEISCHER, E.L. WARLICK, J.L. HOUSE, Q.S. FETRICH, E.
HO, L.A. KOIODZIEJSKI, AND E.F. IPPEN CONTACTLESS ELECTROFLECTANCE STUDY
OF LN X GAI. X AS/LNP MULTIPLE-QUANTUM-WELL STRUCTURES INCLUDING THE
OBSERVATION OF SURFACE/INTERFACE ELECTRIC FIELDS 481 L.V. MALIKOVA, J.Z.
WAN, FRED TL. FOLLAK, J.O. SIMMONS, AND D.A. THOMPSON OPTICAL
INVENTIGATIONS OF INAS GROWTH ON GAAS AND LOSING IN SINGLY- AND
MULTIPLY-STACKED ISLAND QUANTUM BOXES 487 A. KALBURGE, T.R.
RAMACHANDRAN, R. TIEITZ, Q. XIE, P. CHEN, AND A. MADHUKAR METROLOGY OF
VERY THIN SILICON EPITAXIAL FILMS USING SPECTROSCOPIC ELLIPSOMETRY 493
WEIZE CHEN AND RAFAEL REIF AUTHOR INDEX 499 SUBJECT INDEX 503 INVITED
PAPER XI
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| genre | (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content |
| genre_facet | Konferenzschrift 1996 Boston Mass. |
| id | DE-604.BV011500602 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:10:50Z |
| institution | BVB |
| isbn | 1558993525 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007739741 |
| oclc_num | 37141073 |
| open_access_boolean | |
| owner | DE-29T DE-703 DE-83 |
| owner_facet | DE-29T DE-703 DE-83 |
| physical | XIII, 505 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. eds.: S. M. Prokes ... Pittsburgh, Pa. Materials Research Soc. 1997 XIII, 505 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 448 Crystal growth Congresses Semiconductors Junctions Congresses Semiconductors Surfaces Congresses Surface chemistry Congresses Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Halbleiteroberfläche (DE-588)4137418-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content Halbleiteroberfläche (DE-588)4137418-6 s DE-604 Halbleitergrenzfläche (DE-588)4158802-2 s Prokes, S. M. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 448 (DE-604)BV001899105 448 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007739741&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. Materials Research Society: Materials Research Society symposia proceedings Crystal growth Congresses Semiconductors Junctions Congresses Semiconductors Surfaces Congresses Surface chemistry Congresses Halbleitergrenzfläche (DE-588)4158802-2 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| subject_GND | (DE-588)4158802-2 (DE-588)4137418-6 (DE-588)1071861417 |
| title | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. |
| title_auth | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. |
| title_exact_search | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. |
| title_full | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. eds.: S. M. Prokes ... |
| title_fullStr | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. eds.: S. M. Prokes ... |
| title_full_unstemmed | Control of semiconductor surfaces and interfaces symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. eds.: S. M. Prokes ... |
| title_short | Control of semiconductor surfaces and interfaces |
| title_sort | control of semiconductor surfaces and interfaces symposium held december 2 5 1996 boston massachusetts u s a |
| title_sub | symposium held December 2 - 5, 1996, Boston, Massachusetts, U.S.A. |
| topic | Crystal growth Congresses Semiconductors Junctions Congresses Semiconductors Surfaces Congresses Surface chemistry Congresses Halbleitergrenzfläche (DE-588)4158802-2 gnd Halbleiteroberfläche (DE-588)4137418-6 gnd |
| topic_facet | Crystal growth Congresses Semiconductors Junctions Congresses Semiconductors Surfaces Congresses Surface chemistry Congresses Halbleitergrenzfläche Halbleiteroberfläche Konferenzschrift 1996 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007739741&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT prokessm controlofsemiconductorsurfacesandinterfacessymposiumhelddecember251996bostonmassachusettsusa |