Chemical beam epitaxy and related techniques:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Chichester [u.a.]
Wiley
1997
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 444 S. Ill., graph. Darst. |
| ISBN: | 0471967483 |
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| 245 | 1 | 0 | |a Chemical beam epitaxy and related techniques |c ed. by J. S. Foord ... |
| 264 | 1 | |a Chichester [u.a.] |b Wiley |c 1997 | |
| 300 | |a XIV, 444 S. |b Ill., graph. Darst. | ||
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| 650 | 4 | |a Epitaxy | |
| 650 | 4 | |a Molecular beam epitaxy | |
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Datensatz im Suchindex
| _version_ | 1804126002997100544 |
|---|---|
| adam_text | Contents
List of Contributors xiii
Preface xv
CHAPTER 1 Chemical Beam Epitaxy: An introduction 1
G. /. Davies, J. S. Foord, and W. T. Tsang
1.1 Introduction 1
1.2 Growth Mechanisms 4
1.3 Comparisons of Epitaxial Growth Processes 6
References 11
CHAPTER 2 Growth Apparatus Design and Safety Considerations 13
F. Alexandre andj. L. Benchimol
2.1 Introduction 13
2.2 System Configuration 14
2.2.1 System Design Considerations 14
2.2.2 Sample Loading Chamber 16
2.2.3 Growth Chamber 17
2.2.4 Gas Handling System 20
2.3 Pumping System 21
2.3.1 Static Pumps 23
2.3.2 Dynamic Pumps 25
2.4 Source Injectors 26
2.4.1 Low-Temperature Injector 26
2.4.2 High-Temperature Injector 28
2.4.3 Evaporation Cell for Solid Sources 31
2.5 Source Control and Switching 31
2.5.1 Mass Flow Control with Carrier Gas 32
2.5.2 Mass Flow Control without Carrier Gas 35
vi Chemical Beam Epitaxy and Related Techniques
2.5.3 Pressure Control 36
2.5.4 Source Switching 39
2.6 Safety Systems 40
2.6.1 Hazards of Gas Sources 41
2.6.2 Safety Considerations in Equipment Design 41
2.6.3 Gas Detection 42
2.6.4 Safety Interlocking 42
2.6.5 Exhaust Treatment 43
2.6.6 Safe Experimental Procedures 44
2.7 Future System Developments 45
2.7.1 Substrate Stage 45
2.7.2 Common Low-Temperature Injector 46
2.7.3 Multiwafer Scale-up 47
2.8 Conclusions 47
References 48
CHAPTER 3 Precursors for Chemical Beam Epitaxy 51
D. A. Bohling
3.1 Introduction 51
3.2 Review of CBE Precursors 53
3.2.1 Group III Sources for III-V Compound
Semiconductors 53
3.2.2 Group V Sources for III-V Compound
Semiconductor CBE 60
3.2.3 Dopant Sources for Compound Semiconductor
CBE 66
3.2.4 Chemical Precursors for Silicon and Silicon Dioxide
CBE 67
3.3 Conclusions 68
Acknowledgements 69
References 69
CHAPTER 4 Reaction Mechanisms for III-V Semiconductor Growth
by Chemical Beam Epitaxy: Physical Origins of the Growth Kinetics
and Film Purities Observed 73
/. 5. Foord
4.1 Introduction 73
4.2 An Approach to the Determination of CBE Growth
Mechanisms 74
Contents vii
4.2.1 The Chemical Nature and Fluxes of Species
Impinging on to and Leaving the Growth
Surface 75
4.2.2 Structure, Composition and Adsorbates at the
Growth Surface 75
4.2.3 Dynamic Surface Chemistry 75
4.3 The CBE Growth of GaAs from Triethylgallium 76
4.3.1 The Occurrence of a Threshold Growth
Temperature 78
4.3.2 The Decrease in the Growth Rate at High
Temperatures 79
4.3.3 Spill-over Effects in Carbon Incorporation 80
4.3.4 Variation in Growth Rate with III-V Ratio 81
4.4 Variation of Growth Rate with Semiconductor Matrix 81
4.5 Growth Kinetics Using Other Alkyl Precursors 84
4.6 Impurity Incorporation Mechanisms 88
4.7 Concluding Remarks 91
References 91
CHAPTER 5 Growth of GaAs-Based Devices by Chemical Beam
Epitaxy 93
C. R. Abernathy
5.1 Introduction 93
5.2 Heterojunction Bipolar Transistors 94
5.2.1 HBT Structures 95
5.2.2 Growth of the Base 96
5.2.3 The AlGaAs Emitter 102
5.2.4 The InGaP Emitter 105
5.2.5 The Collector and Subcollector 109
5.2.6 Npn Device Results 110
5.2.7 Selective Epitaxial Growth of Extrinsic
Contacts 110
5.2.8 PnpHBTs 115
5.3 Field Effect Transistors 117
5.3.1 MESFETs 117
5.3.2 HEMTs 117
5.4 Optical Devices 121
5.5 Conclusions 123
References 123
viii Chemical Beam Epitaxy and Related Techniques
CHAPTER 6 CBE InP-Based Materials and Devices 129
W. T. Tsang and T. H. Chiu
6.1 Introduction 129
6.2 System Design Considerations 130
6.2.1 Gas Injectors 132
6.2.2 Cryopanel 132
6.2.3 Pumping 134
6.2.4 Flow Rate Control 135
6.2.5 Growth Temperature Monitoring 137
6.3 Growth Mechanism 137
6.4 Progress in Material Growth 142
6.4.1 Binary Compound 142
6.4.2 Ternary and Quaternary Alloys 143
6.4.3 Gaseous Doping in InP-Based Materials 145
6.5 Progress in Devices 147
6.5.1 InGaAs/InGaAsP MQW Lasers and Modulators 147
6.5.2 Strained InAsP MQW Lasers and Modulators 153
6.5.3 InP/InGaAsP/InGaAs Avalanche Photodiodes 155
6.5.4 Monolithic Integrated Photoreceivers 156
6.5.5 InGaAsP-based Electronic Devices 158
References 160
CHAPTER 7 MOMBE of Antimonides and Growth Model 163
H. Asahi
7.1 Introduction 163
7.2 MOMBE Growth System 164
7.3 MOMBE of GaAs and GaSb and Growth Model 165
7.3.1 Use of TEGa, As4 and Sb4 and Growth Model 165
7.3.2 Use of TEGa, TESb, and TEAs 172
7.3.3 Use of TEGa, TDMASb, and TDMAAs: Etching
Effect 174
7.3.4 Substrate Orientation Dependence 178
7.4 AlSb and AlGaSb Growth 181
7.4.1 Growth with TIBAL 181
7.4.2 Growth with TMAAL 183
7.5 III-III-V Alloy Growth 186
7.5.1 InGaAs 186
7.5.2 InGaSb 186
Contents ix
7.6 III-V-V Alloy Growth 187
7.6.1 InAsSb 187
7.6.2 GaAsSb 190
7.7 Selective Growth 191
7.7.1 Growth on SiO2 Masked Substrate 191
7.7.2 Growth on Patterned Substrate 193
7.8 Concluding Remarks 194
References 195
CHAPTER 8 Chemical Beam Epitaxy of Widegap II-VI Compound
Semiconductors 199
A. Yoshikawa
8.1 Introduction 199
8.2 CBE of Widegap II-VI Compounds 200
8.2.1 Growth of Zn- and Cd-Based Binary II-VI
Compounds 201
8.2.2 Growth of (Zn,Cd,Mg)(S,Se) Ternary and Quaternary
II-VI Compounds and Novel Structures 209
8.3 Growth Mechanism in CBE of ZnSe and CdSe 214
8.3.1 An in situ Optical Probing Method Suitable for CBE
of II-VI Compounds 214
8.3.2 Surface Reaction Models in CBE of ZnSe and
CdSe 219
8.4 Impurity Doping and Device Applications 223
8.4.1 p-Type Doping 223
8.4.2 n-Type Doping 225
8.4.3 Blue/green LDs and LEDs 226
8.5 Summary 228
References 229
CHAPTER 9 Gas Source Molecular Beam Epitaxy of Silicon and
Related Materials 231
231
232
234
239
239
Y. Shiraki
9.1 Introduction
9.2 Equipment for Silicon Gas Source MBE
9.3 Growth Mechanisms
9.4 Growth of SiGe Alloys
9.4.1 Formation and Control of SiGe Alloys
Chemical Beam Epitaxy and Related Techniques
9.4.2 Surface Segregation 242
9.4.3 Surfactant-Mediated Growth and Segregant-Assisted
Growth (SAG) 246
9.4.4 Critical Thickness 251
9.4.5 Ge Composition Dependence 253
9.5 Growth of SiC 255
9.6 Doping 257
9.7 Formation of Si/Ge Heterostructures 260
9.7.1 Band Structures of Si/Ge Heterostructures 260
9.7.2 Formation of Superlattices and Quantum Wires 263
9.8 Selective Growth 267
9.9 Device Applications of GSMBE 270
Acknowledgements 274
References 274
CHAPTER 10 Gas Source Molecular Beam Epitaxy 279
L. Goldstein
10.1 Introduction 279
10.2 Safety Aspects of GSMBE 280
10.2.1 Organometallic Low-Pressure Group V Sources 280
10.2.2 Hydride Generator 281
10.3 Growth of the Quaternary InGaAsP 282
10.3.1 Influence of Group III Composition 282
10.3.2 Influence of Growth Rate and Temperature 283
10.3.3 Immiscibility Growth of GalnAsP on InP 284
10.4 Growth of Strain Layer Quantum Wells in the InGaAsP
System 288
10.4.1 Interface Control of GalnAsP/InP QW 288
10.4.2 Strained Layer Multiquantum Wells (InGaAsP) 289
10.4.3 Compressive Strained Quantum Wells (InGaAsP) 290
10.4.4 Tensile Strained Quantum Wells (InGaAsP) 292
10.4.5 Strain Compensated Layers 292
10.5 Multistep Epitaxy with GSMBE 294
References 297
CHAPTER 11 Dopants and Dopant Incorporation 299
T. Whitaker and T. Martin
11.1 Introduction 299
Contents xi
11.2 Solid Dopant Sources 300
11.3 Gaseous Dopant Sources 301
11.4 Carbon Doping in GaAs/AlGaAs 302
11.4.1 Carbon Doping with TMGa 303
11.4.2 Hydrogen Passivation 303
11.4.3 Halomethane Sources 304
11.4.4 Carbon Doping in the Presence of TDMAAs 307
11.5 Mg, Zn, and Be as p-Type Dopants for GaAs/AlGaAs 313
11.6 n-Type Dopants for GaAs/AlGaAs 313
11.6.1 Silicon 313
11.6.2 Tin 313
11.6.3 Sulphur 315
11.7 p-Type Doping of InGaAs/InP 317
11.8 Carbon doping of InGaAs 319
11.9 n-Type Doping of InGaAs/InP 323
11.10 Semi-insulating InP by Fe Doping 324
11.11 Antimonides 325
11.12 Conclusions 326
References 326
CHAPTER 12 Selected Area Epitaxy 331
H. Heinecke and G. J. Davies
12.1 Introduction 331
12.2 Growth Techniques 333
12.2.1 Molecular Beam Epitaxy 333
12.2.2 Metal Organic Vapour Phase Epitaxy 335
12.2.3 Chemical Beam Epitaxy/Metal Organic Molecular
Beam Epitaxy 343
12.3 Surface Reaction Mechanisms of Selected Area
Epitaxy 344
12.3.1 The Influence of the Group III Species in Selected
Area Epitaxy 345
12.3.2 The Influence of Group V Species in Selected Area
Epitaxy 349
12.4 The Surface Selective Growth Process in CBE/MOMBE 355
12.4.1 Surface Orientation Dependence 355
12.4.2 Planar Selective Area Epitaxy 360
12.4.3 Embedded Selective Area Epitaxy 375
12.5 Devices Fabricated Using SAE by CBE/MOMBE 384
Acknowledgements 391
References 391
xii Chemical Beam Epitaxy and Related Techniques
CHAPTER 13 Chemical Beam Etching 395
W. T. Rang and T. H. Chiu
13.1 Introduction 395
13.2 In situ Etching Technologies 396
13.3 Chemical Beam Etching of GaAs and InP 397
13.3.1 Monolayer Control 397
13.3.2 Surface Chemistry 399
13.3.3 Etching Kinetics 402
13.4 Surface Morphology 403
13.4.1 Continuous Etching 403
13.4.2 Pulsed Etching 405
13.5 Etch Cleaning 408
13.6 Patterned Etch and Regrowth 410
13.7 Summary 412
References 413
CHAPTER 14 Laser-Assisted Epitaxy 415
H. Sugiura
14.1 Introduction 415
14.1.1 Background of Photoassisted Epitaxy 415
14.1.2 Current Status of Photoassisted Epitaxy 416
14.1.3 Apparatus for Laser-Assisted CBE 417
14.1.4 Laser Irradiation Effects 419
14.2 Experimental Results 420
14.2.1 Binary Epilayers 420
14.2.2 InGaAs 421
14.3 InGaAsP 424
14.3.1 InGaAsP MQW 424
14.4 Optical Device Applications 427
14.4.1 Two-Wavelength Laser Diode Array 428
14.4.2 Multiple-wavelength Laser Diode Array 430
14.4.3 Photodetector for Multiple Wavelengths 432
14.5 Summary 434
References 434
Index 437
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| spelling | Chemical beam epitaxy and related techniques ed. by J. S. Foord ... Chichester [u.a.] Wiley 1997 XIV, 444 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Epitaxy Molecular beam epitaxy Surface chemistry Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 s DE-604 Foord, J. S. Sonstige oth HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007725987&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
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| title | Chemical beam epitaxy and related techniques |
| title_auth | Chemical beam epitaxy and related techniques |
| title_exact_search | Chemical beam epitaxy and related techniques |
| title_full | Chemical beam epitaxy and related techniques ed. by J. S. Foord ... |
| title_fullStr | Chemical beam epitaxy and related techniques ed. by J. S. Foord ... |
| title_full_unstemmed | Chemical beam epitaxy and related techniques ed. by J. S. Foord ... |
| title_short | Chemical beam epitaxy and related techniques |
| title_sort | chemical beam epitaxy and related techniques |
| topic | Epitaxy Molecular beam epitaxy Surface chemistry Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Epitaxy Molecular beam epitaxy Surface chemistry Molekularstrahlepitaxie |
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