High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1997
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 117 S. graph. Darst. |
Internformat
MARC
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| 100 | 1 | |a Ramgopal Rao, V. |e Verfasser |0 (DE-588)1223941701 |4 aut | |
| 245 | 1 | 0 | |a High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |c V. Ramgopal Rao |
| 264 | 1 | |c 1997 | |
| 300 | |a 117 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Univ. der Bundeswehr, Diss., 1997 | ||
| 650 | 0 | 7 | |a Gate-Oxid |0 (DE-588)4269383-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kurzkanal-FET |0 (DE-588)4207298-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Niedrigtemperatur |0 (DE-588)4417434-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Kurzkanal-FET |0 (DE-588)4207298-0 |D s |
| 689 | 0 | 2 | |a Gate-Oxid |0 (DE-588)4269383-4 |D s |
| 689 | 0 | 3 | |a Niedrigtemperatur |0 (DE-588)4417434-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007664410&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-007664410 | |
Datensatz im Suchindex
| _version_ | 1807681849844039680 |
|---|---|
| adam_text |
CONTENTS
ABSTRACT
.
II
1.
INTRODUCTION
.
1
2.
ALTERNATIVE
THIN
SIO
2
GATE
DIELECTRICS
.
5
2.1
INTRODUCTION
.
5
2.2
LOW
TEMPERATURE
OXIDES
.
7
2.2.1
FABRICATION
AND
ELECTRICAL
CHARACTERISATION
.
7
2.2.2
CONSTANT
CURRENT
STRESS
EXPERIMENTS
.
8
2.3
ALTERNATIVE
SIO
2
DIELECTRICS
.
11
2.3.1
FABRICATION
.
15
2.3.2
ELECTRICAL
CHARACTERISATION
.
15
2.3.3
CONSTANT
CURRENT
STRESS
AND
RADIATION
EXPERIMENTS
.
20
2.4
OXIDES
ON
THE
VERTICAL
SURFACES
.
30
3.
OXYNITRIDES
.
34
3.1
INTRODUCTION
.
34
3.2
REOXIDISED
NITRIDED
OXIDES
.
35
3.2.1
FABRICATION
.
35
3.2.2
HIGH
ENERGY
IRRADIATION
EXPERIMENTS
.
36
4.
VERTICAL
PLANAR
DOPED
BARRIER
MOSFETS
.
45
4.1
INTRODUCTION
.
45
4.2
FABRICATION
.
46
4.3
ELECTRICAL
CHARACTERISATION
.
47
4.4
ELECTRON
VELOCITY
OVERSHOOT
.
49
4.4.1
EXPERIMENTAL
PROOF
.
54
4.4.2
SIMULATIONS
.
62
4.5
COMPARISONS
WITH
CONVENTIONAL
SUB
100
NM
CHANNEL
LENGTH
MOSFETS
.
65
4.5.1
LOW-FIELD
MOBILITY
.
68
4.5.2
ELECTRON
VELOCITY
.
72
4.5.3
HOT
ELECTRON
EFFECTS
AND
LDD
STRUCTURES
.
72
4.5.4
ELECTRIC
FIELD
TAILORING
.
81
4.5.5.
PARASITIC
CAPACITANCES
.
84
4.5.6
DRAIN
INDUCED
BARRIER
LOWERING
.
85
4.5.7
3-D
INTEGRATION
.
87
4.6
COMPARISONS
WITH
SOI-MOSFETS
.
88
4.6.1.
ECONOMIC
FACTORS
.
88
4.6.2
RELIABILITY
CONCERNS
.
90
4.6.3
HYSTERESIS
BEHAVIOUR
.
92
4.7
LOW-TEMPERATURE
CHARACTERISATIONS
.
101
5.
SUMMARY
.
104
REFERENCES
.
106
APPENDIX
.
113
PUBLICATIONS
.
114
ACKNOWLEDGMENTS
.
116 |
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| author | Ramgopal Rao, V. |
| author_GND | (DE-588)1223941701 |
| author_facet | Ramgopal Rao, V. |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV011400825 |
| illustrated | Illustrated |
| indexdate | 2024-08-18T00:09:11Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007664410 |
| oclc_num | 635357745 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-355 DE-BY-UBR |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-355 DE-BY-UBR |
| physical | 117 S. graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| record_format | marc |
| spelling | Ramgopal Rao, V. Verfasser (DE-588)1223941701 aut High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao 1997 117 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Univ. der Bundeswehr, Diss., 1997 Gate-Oxid (DE-588)4269383-4 gnd rswk-swf Kurzkanal-FET (DE-588)4207298-0 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf Niedrigtemperatur (DE-588)4417434-2 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Kurzkanal-FET (DE-588)4207298-0 s Gate-Oxid (DE-588)4269383-4 s Niedrigtemperatur (DE-588)4417434-2 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007664410&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Ramgopal Rao, V. High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths Gate-Oxid (DE-588)4269383-4 gnd Kurzkanal-FET (DE-588)4207298-0 gnd MOS-FET (DE-588)4207266-9 gnd Niedrigtemperatur (DE-588)4417434-2 gnd |
| subject_GND | (DE-588)4269383-4 (DE-588)4207298-0 (DE-588)4207266-9 (DE-588)4417434-2 (DE-588)4113937-9 |
| title | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_auth | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_exact_search | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_full | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_fullStr | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_full_unstemmed | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths V. Ramgopal Rao |
| title_short | High performance planar doped barrier silicon MOSFETs with sub 100 nm channel lengths |
| title_sort | high performance planar doped barrier silicon mosfets with sub 100 nm channel lengths |
| topic | Gate-Oxid (DE-588)4269383-4 gnd Kurzkanal-FET (DE-588)4207298-0 gnd MOS-FET (DE-588)4207266-9 gnd Niedrigtemperatur (DE-588)4417434-2 gnd |
| topic_facet | Gate-Oxid Kurzkanal-FET MOS-FET Niedrigtemperatur Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007664410&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT ramgopalraov highperformanceplanardopedbarriersiliconmosfetswithsub100nmchannellengths |