Advances in microcrystalline and nanocrystalline semiconductors - 1996: symposium held December 2 - 6, 1996, Boston, Massachusetts, USA
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, Pa.
Materials Research Soc.
1997
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
452 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXV, 1060 S. Ill., graph. Darst. |
| ISBN: | 1558993568 |
Internformat
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| 245 | 1 | 0 | |a Advances in microcrystalline and nanocrystalline semiconductors - 1996 |b symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |c eds.: Robert W. Collins ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1997 | |
| 300 | |a XXV, 1060 S. |b Ill., graph. Darst. | ||
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| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 452 | |
| 650 | 4 | |a Luminescence |v Congresses | |
| 650 | 4 | |a Nanostructured materials |v Congresses | |
| 650 | 4 | |a Polycrystalline semiconductors |v Congresses | |
| 650 | 4 | |a Porous materials |v Congresses | |
| 650 | 4 | |a Porous silicon |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Thin film devices |v Congresses | |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSKJM PROCEEDINGS VOLUME 452 ADVANCES IN
MICROCIYSTAILINE AND NANOCRYSTALLINE SEMICONDUCTORS-1996 SYMPOSIUM HELD
DECEMBER 2-6,1996, BOSTON, MASSACHUSETTS, U.S.A. EDITORS: ROBERT W.
COLLINS THE PENNSYLVANIA STATE UNIVERSITY UNIVERSITY PARK, PENNSYLVANIA,
U.S.A. PHILIPPE M. FAUCHET UNIVERSITY OF ROCHESTER ROCHESTER, NEW YORK,
U.S.A. ISAMII SHIMIZU TOKYO INSTITUTE OF TECHNOLOGY YOKOHAMA, JAPAN
JEAN-CLAUDE VIAL UNIVERSITE JOSEPH FOURIER GRENOBLE, FRANCE TOSHIKAZU
SHIMADA HITACHI LTD. TOKYO, JAPAN A. PAUL ALIVISATOS UNIVERSITY OF
CALIFORNIA, BERKELEY BERKELEY, CALIFORNIA, U.S.A. |M|R|S| MATERIALS
RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA CONTENTS PREFACE XXI MATERIALS
RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XXVI PARTI: CURRENT STATUS AND
FUTURE PROSPECTS OF RESEARCH IN MICROCRYSTALLINE AND NANOCRYSTALLINE
SEMICONDUCTORS *RECENT PROGRESS IN MICROCRYSTALLINE SEMICONDUCTOR THIN
FILMS 3 *. TANAKA SEMICONDUCTOR NANOCRYSTALS: EXCITON QUANTUM
MECHANICS, SINGLE-NANOCRYSTAL LUMINESCENCE, AND METASTABLE HIGH-PRESSURE
PHASES 17 M. RIIRMAL AND L.E. BRUS *POROUS SEMICONDUCTORS: A TUTORIAL
REVIEW 29 LT. CANHAM PART II: THEORY OF SEMICONDUCTOR CLUSTERS.
NANOCRYSTALS. AND POROUS SILICON MOLECULAR DYNAMIC SIMULATIONS OF
SEMICONDUCTOR CLUSTERS 45 QIRIJA S. DUBEY AND GODFREY QUMBS ATOMIC AND
ELECTRONIC PROPERTIES OF SMALL HYDROGENATED SILICON CLUSTERS: SI 6 H 2M
AND SI 6 H + 2M+I 51 TAKEHIDE MIYAZAKI, IVAN STICH, TSUYOSHI UDA, AND
KIYOYUKI TERAKURA COMPARATIVE THEORETICAL STUDY OF AMORPHOUS AND
CRYSTALLINE SILICON CLUSTERS 57 M. LANNOO, * DELERUE, AND O. ALLAN AB
INITIO CALCULATION OF THE OPTICAL PROPERTIES OF SILICON QUANTUM WIRES 63
STEFANO OSSICINI, M. BIAGINI, CM. BERTONI, Q. ROMA, AND O. BISI A
MICROSCOPIC MODEL FOR THE DIELECTRIC FUNCTION OF POROUS SILICON 69 M.
CRUZ, M.R. BELTRAN, C. WANG, AND J. TAGUEENA-MARTINEZ THEORY OF PRESSURE
EFFECTS ON SILICON NANOCRYSTALLITES 75 Q. ALLAN, C. DELERUE, AND M.
LANNOO INVITED PAPER V THEORETICAL THERMAL CONDUCTIVITY OF POROUS
SILICON: NONLINEAR BEHAVIOR 81 J.E. LUGO, J.A. DE RIO, AND J.
TAGUEEHA-MARTINEZ PARTIM: SYNTHESIS AND PROPERTIES OF LUMINESCENT GROUP
IV CLUSTERS. NANOCRYSTALS. AND NANOSTRUCTURES SYNTHESIS, OPTICAL
PROPERTIES, AND MICROSTRUCTURE OF SEMICONDUCTOR NANOCRYSTALS FORMED BY
ION IMPLANTATION 89 J.D. BUDAL, C.W. WHITE, S.P. WITHROW, R.A. ZUHR, AND
J.O. ZHU VISIBLE PHOTOLUMINESCENCE FROM SI ION-IMPLANTED AND
THERMALLY-ANNEALED SK 2 FILMS 99 Y. KANEMITSU, N. SHIMIZU, S. OKAMOTO,
T. KOMODA, P.L.F. HEMMENT, AND B.J. SEALY ANNEALING STUDIES OF VISIBLE
LIGHT EMISSION FROM SILICON NANOCRYSTALS PRODUCED BY IMPLANTATION 105 Q.
GHISLOTTI, B. NIELSEN, L.F. DI ****, *. SHEEY, P. MUTTI, A. PIFFERI, P.
TARONI, L. VALENTINI, F. CORNI, AND R. TONINI IMPROVEMENT OF THE
LUMINESCING BEHAVIOR OF SI + -LMPLANTED SI0 2 FILMS ILL T. SCHUSTER, T.
DITTRICH, TI.E. PORTEANU, T. FISCHER, E. HECHTL, V. PETROVA-KOCH, AND F.
KOCH BLUE LUMINESCENCE FROM SIO X FILMS CONTAINING GE NANOCRYSTALS 117
N. ZACHARIAS, R. WEIGAND, J. BIASING, AND J. CHRISTEN CHARACTERIZATION
OF SIGE ALLOY NANOCRYSTALLITES PREPARED BY PULSED LASER ABLATION IN
INERT GAS AMBIENT 123 YUKA YAMADA, TAKAAKI ORII, AND TAKEHITO YOSHIDA
EXCITATION INTENSITY AND TEMPERATURE DEPENDENT PHOTOLUMINESCENCE
BEHAVIOR OF SILICON NANOPARTICLES 129 E. WERWA, A.A. SERAPHIN, AND K.D.
KOLENBRANDER NANOSTRUCTURED SILICON-BASED FILMS WITH VISIBLE LIGHT
EMISSION SYNTHESIZED BY LASER ABLATION 135 T. NAKIMURA, Y. KUNII, N.
ONO, AND K. MURAKAMI LUMINESCENCE PROPERTIES OF SILICON NANOCRYSTALS 141
SHOUTIAN LI, STUART J. SILVERS, AND M. SAMY EL-SHALL FERROMAGNETIC
PROPERTIES OF SPARK-PROCESSED PHOTOLUMINESCING SILICON 147 J. HACK, M.H.
LUDWIG, W. OEERTS, AND R.E. HUMMEL INVITED PAPER VI MULTICOLOR EFFECTS
OF LUMINESCING, NANOSTRUCTURED SILICON AFTER SPARK-PROCESSING IN PURE
AND COMPOSITE GASES 153 M.H. LUDWIG, A. AUGUSTIN, AND R.E. HUMMEL
PHOTOLUMINESCENCE CHARACTERISTICS OF HF-TREATED SILICON NANOCRYSTALS 159
S. TIOZAKI, S. SATO, H. ONO, AND H. MORISAKI UV AND BLUE
PHOTOLUMINESCENCE FROM SILICON NANOCOLLOIDS 165 SHINGO JWASAKI AND
KEISAKU KIMURA SOFT X-RAY EMISSION STUDIES OF THE ELECTRONIC STRUCTURE
IN SILICON NANOCLUSTERS 171 T. VAN BUUREN, L.N. DINH, L.L. CHASE, W.J.
SIEKHAUS, I. JIMENEZ, L.J. TERMINELLO, M. QRUSH, T.A. CALLCOTT, AND J.A.
CARLISLE COMPARATIVE OPTICAL STUDIES OF CHEMICALLY SYNTHESIZED SILICON
NANOCRYSTALS 177 QILDARDO R. DELGADO, HOWARD W.H. LEE, SUSAN M.
KAUZLARICH, AND RICHARD A. BLEY VISIBLE LUMINESCENCE IN SI/SI02
SUPERLATTICES 183 D.J. LOCKWOOD, J-M. BARIBEAU, P.D. GRANT, H.J. LABBE,
Z.H. LU, J. STAPIEDON, AND B.T. SULLIVAN PHOTOLUMINESCENCE MECHANISM OF
SILICON QUANTUM DOTS AND WELLS 195 Y. KANEMITSU AND S. OKAMOTO POSSIBLE
MECHANISM OF THE 30-100 PICOSECONDS FAST AND EFFICIENT PHOTOLUMINESCENCE
FROM NC-SI/A-SI0 2 DOPED WITH TRANSITION METALS 201 S. VEPREK, TH.
WIRSCHEM, J, DIAN, S. PERNA, R. MERICA, M.Q.J. VEPREK-HEIJMAN, V.
PERINA, M. FUSS, AND X. LIN PREPARATION AND CHARACTERIZATION OF SILICON
NANOCRYSTALS IN A SI0 2 MATRIX AND STUDY OF SUBOXIDE STABILITY 207 B.J.
HINDS, A. BANERJEE, R.S. JOHNSON, AND Q. LUCOVSKY PART IV: SYNTHESIS AND
PROPERTIES OF OTHER GROUP IV CLUSTERS. NANOCRYSTALS. AND NANOSTRUCTURES
ELECTRONIC STATES OF NANOCRYSTALLINE CARBON 215 O.P. LOPINSKI, V.L.
MERKULOV, AND J.S. LANNIN STRUCTURE AND VIBRATIONAL PROPERTIES OF
ISOLATED CARBON NANOCRYSTALLITES 225 V.L. MERKULOV, J.S. LANNIN, AND
J.M. COWLEY INVITED PAPER VII RAMAN SCATTERING INVESTIGATION OF
SUPERCONDUCTIVITY IN SI 4 6 CLATHRATES 231 S.L. FANG, L. QRIGORIAN, A.M.
RAO, P.C. EKLUND, O. DRESSELHAUS, M.S. DRESSELHAUS, H. KAWAJI, AND S.
YAMANAKA THE CHARACTERISTICS AND OXIDATION OF VAPOR-LIQUID-SOLID GROWN
SI NANOWIRES 237 J. WESTWATER, D.P. OOSAIN, S. TOMIYA, Y. TLIRANO, S.
USUI, AND H. RUDA SELF-ASSEMBLING FORMATION OF SILICON QUANTUM DOTS BY
LOW PRESSURE CHEMICAL VAPOR DEPOSITION 243 K. LIAKAGAWA, M. FUKUDA, S.
MIYAZAKI, AND M. TIIROSE RAMAN SPECTROSCOPY OF GE NANOCRYSTALS GROWN BY
SELF-ORGANIZATION PROCESSES 249 A. STELLA, C.E. BOTTANI, P. CHEYSSAC, R.
KOFMAN, P. MILANI, AND P. TOGNINI GROWTH OF GERMANIUM ON POROUS SILICON
(001) 255 W.FI. THOMPSON, Z. YAMANL, U.M. NAYFEH, M-A. HASAN, J.E.
QREENE, AND M.TI. NAYFEH EFFECT OF QUANTUM-WELL STRUCTURES ON THE
THERMOELECTRIC FIGURE OF MERIT IN THE SI/SII^GE* SYSTEM 261 X. SUN, M.S.
DRESSELHAUS, K.L. WANG, AND M.O. TANNER PARTV: GROUPS LLL-V AND LL-VI.
AND METAL SULFIDE. IODIDE. AND OXIDE NANOCRYSTALS AND NANOSTRUCTURES
OPTICAL PROPERTIES OF NANOCRYSTALLINE INP IN OPAL THREE-DIMENSIONAL
GRATINGS 269 H.P. JOHNSON, S.O. ROMANOV, V. BUTKO, H. YATES, M.E.
PEMBLE, AND CM. SOTOMAYOR TORRES LIMITS AND PROPERTIES OF SIZE
QUANTIZATION EFFECTS IN INAS SELF-ASSEMBLED QUANTUM DOTS 275 K.H.
SCHMIDT, O. MEDEIROS-RIBEIRO, M. CHENG, AND P.M. PETROFF DETERMINATION
OF OPTICAL PROPERTIES OF THE MICRO-FACETTED INGAAS QUANTUM WELLS AND
QUANTUM WIRES USING MAGNETOPHOTOLUMINESCENCE 281 SUNG-BOCK KIM,
JEONG-RAE RO, AND EL-HANG LEE RAMAN SCATTERING AND PHOTOLUMINESCENCE OF
SPONTANEOUSLY ORDERED GAO.5LNO.5P ALLOY 287 Q.FI. LI, Z.X. LIU, H.X.
HAN, Z.P. WANG, J.R. DONG, AND Z.Q. WANG GROWTH AND CHARACTERIZATION OF
ZNI. X MN X SEI. Y S Y EPILAYERS AND RELATED HETEROSTRUCTURES 293 F.S.
FLACK, *. SAMARTH, AND F. SEMENDY VIII THE FABRICATION OF SEMICONDUCTOR
NANOSTRUCTURE ARRAYS ON A SILICON SUBSTRATE USING AN ANODIZED ALUMINUM
TEMPLATE 299 S.P. MCQINNIS, J.N. CLEARY, AND B. DAS EFFECTS OF MN 2+
-DISTRIBUTION CONTROLLED BY CARBOXYLIC ACIDS ON PHOTOLUMINESCENCE
INTENSITY OF NANOSIZED ZNS:MN PARTICLES 305 T. ISOBE, T. IGARASHI, AND
M. SENNA SYNTHESIS OF MN 2+ - DOPED CDS NANOCRYSTALS EMBEDDED IN A
SOL-GEL SILICA MATRIX: CHARACTERIZATION OF THE LUMINESCENCE ACTIVATOR
311 O. COUNIO, S. ESNOUF, T. OACOIN, P. BARBOUX, A. HOFSTAETTER, AND
J-P. BOILOT ELECTRON AND HOLE TRAPPING DYNAMICS IN SEMICONDUCTOR
NANOCRYSTALS: FEMTOSECOND NONLINEAR TRANSMISSION AND PHOTOLUMINESCENCE
STUDY 317 V. KLLMOV AND D. MCBRANCH SURFACE DERIVATIZATION OF
NANOCRYSTALLINE CDSE SEMICONDUCTORS 323 J-K. LEE, M. LIUNO, AND M.Q.
BAWENDI RAMAN SCATTERING AND PHOTOLUMINESCENCE MEASUREMENTS ON LL-VI
SEMICONDUCTOR NANOCRYSTALS AS A FUNCTION OF PRESSURE AND PARTICLE SIZE
329 JOHN SCHROEDER, MIERIE LEE, MARKUS R. SILVESTRL, LIN-WEN HWANG, AND
PETER D. PERSANS SPECTRAL DIFFUSION OF ULTRANARROW FLUORESCENCE SPECTRA
IN SINGLE QUANTUM DOTS 335 S.A. EMPEDOCLES, D.J. NORRIS, AND M.Q.
BAWENDI ELECTRONIC STRUCTURE OF O-D EXCITON GROUND STATE IN CDSE
NANOCRYSTALS 341 M. CHAMARRO, M. DIB, C. QOURDON, P. LAVALLARD, O.
LUBLINSKAYA, AND A.I. EKIMOV THE BAND-EDGE LUMINESCENCE OF SURFACE
MODIFIED CDSE NANOCRYSTALLITES 347 M. KUNO, J.K. LEE, B.O. DABBOUSI,
F.V. MIKULEC, AND M.Q. BAWENDI STRUCTURAL INVESTIGATIONS OF COLLOIDAL
SEMICONDUCTOR NANOCRYSTAL HETEROSTRUCTURES: FACETING AND EPITAXY 353
A.V. KADAVANICH, A. MEWS, S.U. TOLBERT, X. PENG, M.C. SCHLAMP, J.*. LEE,
AND A.P. AIIVISATOS SYNTHESIS AND CHARACTERIZATION OF HIGHLY LUMINESCENT
(CDSE)ZNS QUANTUM DOTS 359 F.V. MIKULEC, B.O. DABBOUSI, J.
RODRIGUEZ-VIEJO, J.K HEINE, H. MATTOUSSI, K.F. JENSEN, AND M.Q. BAWENDI
IX CATHODOLUMINESCENCE OF CDSE/ZNS QUANTUM-DOT COMPOSITES 365 J.
RODRIGUEZ-VIEJO, J.R. HEINE, B.O. DABBOUSI, H. MATTOUSSI, J. MICHEL,
M.Q. BAWENDI, AND K.F. JENSEN SYNTHESIS AND OPTICAL PROPERTIES OF M0S2
NANOCLUSTERS 371 J.P. WIICOXON, P.P. NEWCOMER, AND Q.A. SAMARA THE
INVESTIGATION OF DONOR AND ACCEPTOR STATES IN THE NANOPARTICLES OF **2
LAYERED SEMICONDUCTOR 377 E. LIFSHITZ OPTICAL PROPERTIES OF CUPROUS
OXIDE NANOCRYSTALS 383 P.J. RODNEY, M.I. FREEDHOFF, A.P. MARCHETTI, Q.L.
MCLENDON, AND P.M. FAUCHET PREPARATION, CHARACTERIZATION, AND OPTICAL
PROPERTIES OF ZINC OXIDE NANOPARTICLES 389 SHOUTIAN LI, STUART J.
SILVERS, AND M. SAMY EL-SHALL THE STRUCTURE AND TEXTURE OF Y 2 0 3 :TB
NANOCRYSTALS 395 J. TAYLOR, M. LIBERA, E. QOLDBURT, AND R. BHARGAVA PART
VI: SYNTHESIS. SURFACES. AND STRUCTURE/PROPERTY RELATIONS OF LUMINESCENT
POROUS SEMICONDUCTORS POROUS SILICON FROM HYDROGENATED AMORPHOUS
SILICON: COMPARISON WITH CRYSTALLINE POROUS SILICON 403 J-N. CHAZALVIEL,
R.B. WEHRSPOHN, I. SOLOMON, AND F. OZANAM CHARACTERIZATION OF
LIGHT-EMITTING POROUS POLYCRYSTALLINE SILICON FILMS 415 M.C. POON, P.O.
HAN, J.KO. SIN, TL. WONG, AND P.K. ** *** STUDY OF POROUS SILICON
FABRICATED FROM N- AND P-TYPE- DOPED POLYCRYSTALLINE FILMS 421 L. TLAJI,
Y. LE THOMAS, F. CHANE CHE LAI, AND P. JOUBERT FORMATION OF BURIED
POROUS SILICON STRUCTURE BY HYDROGEN PLASMA IMMERSION ION IMPLANTATION
427 Z. FAN, PAUIK. CHU, X. LU, S.S.K. IYER, AND RI.W. CHEUNG DEPTH
GRADIENTS IN POROUS SILICON: HOW TO MEASURE THEM AND HOW TO AVOID THEM
431 M. THOENISSEN, M.Q. BERGER, W. THEISS, S. TLILBRICH, M. KRUEGER, R.
ARENS-FISCHER, S. BILLAT, O. LERONDEL, AND H. LUETH X-RAY DIFFRACTION AND
REFLECTIVITY STUDIES OF THIN POROUS SILICON LAYERS 437 D. BUTTARD, Q.
DOLINO, D. BELLET, AND T. BAUMBACH *LNVITED PAPER X NUCLEAR MAGNETIC
RESONANCE (NMR) OF POROUS SILICON W.K. CHANG, M.Y. LIAO, AND K.K.
QLEASON 443 OPTICAL PROPERTIES OF DEUTERIUM-TERMINATED POROUS SILICON
449 TAKAHIRO MATSUMOTO, YASUAKI MASUMOTO, AND NOBUYOSHI KOSHIDA ROLES OF
SURFACE TERMINATION IN PHOTOLUMINESCENCE MECHANISMS OF POROUS SI 455 Y.
SUDA, K. OBATA, A. KUMAGAI, AND N. KOSHIDA LUMINESCENCE AND
SURFACE-STATE CHARACTERISTICS IN P-TYPE POROUS SILICON 461 A. RAMIREZ
PORRAS, O. RESTO, S.Z. WEISZ, Y. GOLDSTEIN, A. MANY, AND E. SAVIR
ELECTROCHEMICAL AND CHEMICAL DEPOSITION OF LL-VI SEMICONDUCTORS IN
POROUS SILICON 467 R. TIERINO, M. QROS-JEAN, L. MONTES, AND D. LINCOT
FABRICATION AND CHARACTERIZATION OF LIGHT-EMITTING POROUS SILICON AND
POLYMER NANOCOMPOSITES 473 S.P. DUTTAGUPTA, P.M. FAUCHET X.L. CHEN, AND
S.A. JENEKHE DEPOSITION OF POLYPYRROLE INTO POROUS SILICON 479 J.D.
MORENO, F. AGULLO-RUEDA, R. OUERRERO-LEMUS, R.J. MARTIN-PALMA, J.M.
MARTINEZ-DUART, M.L. MARCOS, AND J. OONZAELEZ-VELASCO LOCAL STRUCTURE OF
INDIUM-PLATED POROUS SILICON 485 TOSHIMICHI ITO, TAKASHI OOIWA, TAKANOBU
TIAGAO, AND AKIMITSU TLATTA EFFECTS OF NANOCRYSTALLINE STRUCTURE AND
PASSIVATION ON THE PHOTOLUMINESCENT PROPERTIES OF POROUS SILICON CARBIDE
491 JONATHAN E. SPANIER, Q.S. CARGILL, III, IRVING P. HERMAN, SANGSIG
KIM, DAVID R. OOIDSTEIN, ANTHONY D. KURTZ, AND BEN Z. WEISS PART VII:
PHOTOLUMINESCENCE AND OTHER OPTICAL PROPERTIES OF POROUS SILICON
LOCALIZATION OF CARRIERS IN POROUS SILICON 499 /. MIHALCESCU, J.C, VIAL,
AND R. ROMESTAIN IN SITU PHOTOLUMINESCENCE INVESTIGATION OF THE INITIAL
POROUS SILICON FORMATION IN 0.2M NH 4 F (PH 3.2) 505 T. DITTRICH, V.Y.
TIMOSHENKO, AND J. RAPPICH ATOMIC LAYER ETCHING OF POROUS SILICON 511
LIT. LIBON, C. VOELKMANN, V. PETROVA-KOCH, AND F. KOCH ROOM TEMPERATURE
BAND-EDGE LUMINESCENCE FROM SILICON GRAINS PREPARED BY THE
RECRYSTALLIZATION OF MESOPOROUS SILICON 517 KAREN L. MOORE, LEONID
TSYBESKOV, PHILIPPE M. FAUCHET, AND DENNIS Q. HALL LIGHT EMISSION FROM
INTRINSIC AND DOPED SILICON-RICH SILICON OXIDE: FROM THE VISIBLE TO 1.6
|IM 523 L. TSYBESKOV, K.L. MOORE, P.M. FAUCHET, AND D.O. HALL
PHOTOIRRADIATION-LNDUCED NARROWING OF PHOTOLUMINESCENCE SPECTRA FROM
POROUS SILICON 529 M. OKAMOTO, *. */****, *. OOIWA, A. TTATTA, AND T.
/TO PHOTOLUMINESCENCE FROM POROUS SILICON ANODIZED WITH MONOCHROMATIC
LIGHT ILLUMINATION 535 TAKAHIRO MATSUMOTO, YASUAKI MASUMOTO, QO ARATA,
AND HIDENORI MIMURA ANISOTROPY OF THE POROUS SILICON PHOTOLUMINESCENCE
541 O. POLISSKI, B. AVERBOUKH, D. KOVALEV, AND F. KOCH SYNCHROTRON
RADIATION-INDUCED OPTICAL LUMINESCENCE FROM POROUS SILICON: RECENT
OBSERVATIONS 547 /. COULTHARD, *.*. SHAM, D-T. JIANG, AND K.M. TAN THE
RECOMBINATION STATISTICS OF THE VISIBLE PHOTOLUMINESCENCE OF SILICON
NANOCRYSTALS 553 J. DIENER, D.I. KOVALEV, S.D. QANICHEV, Q. POLISSKI,
AND F. KOCH AUGER IONIZATION OF SILICON NANOCRYSTALS 559 B. AVERBOUKH,
D. KOVALEV, M. BEN CHORIN, F. KOCH, ALL. EFROS, AND M. ROSEN OPTICAL
PROPERTIES OF FREESTANDING ULTRAHIGH POROSITY SILICON FILMS PREPARED BY
SUPERCRITICAL DRYING 565 J. VON BEHREN, P.M. FAUCHET, E.H. CHIMOWITZ,
AND CT. LIRA SELECTION RULES IN THE RAMAN SPECTRUM OF POROUS SILICON 571
F. AGUILOE-RUEDA, J.D. MORENO, E. MONTOYA, R. QUERRERO-LEMUS, R.J.
MARTIN-PALMA, AND J.M. MARTINEZ-DUART PART VIII: BIOCHEMICAL.
PHOTOCHEMICAL. PHOTOELECTRONIC. AND OPTICAL DEVICE APPLICATIONS OF
NANOCRYSTAL AND POROUS SEMICONDUCTORS *SILICON AS AN ACTIVE BIOMATERIAL
579 L.T. CANHAM, C.L. REEVES, D.J. WALLIS, J.P. TIEWEY, M.R. HOULTON,
Q.J. SAPSFORD, R.E. GODFREY, A. LONI, A.J. SIMONS, T.I. COX, AND M.C.L
WARD ELECTRON MICROSCOPY OF MESOSCALE ARRAYS OF QUANTUM-CONFINED CDS
NANOPARTICLES FORMED ON DNA TEMPLATES 591 RUSSELL F. PINIZZOTTO, YOUNG
Q. RHO, YANDONG CHEN, ROBERT M. PIRTLE, IRMA L. PIRTLE, JEFFERY L.
COFFER, AND KIN LI INVITED PAPER XII QUANTUM DOTS AS INORGANIC
DNA-BINDING PROTEINS 597 CATHERINE J. MURPHY, ERIC B. BRAUNS, AND HATHA
QEARHEART STUDIES OF PHOTOREDOX REACTIONS ON NANOSIZE SEMICONDUCTORS 601
JESS P. WILCOXON, F. PARSAPOUR, AND D.F. KELIEY TRANSIENT PHOTOCURRENT
RESPONSE OF DYE-SENSITIZED POROUS NANOCRYSTALLINE **2 ELECTRODES 607
ALBERT OOOSSENS, O.K. BOSCHLOO, AND J. SCHOONMAN ELECTRON TIME-OF-FLIGHT
MEASUREMENTS IN POROUS SILICON 613 PRASANNA RAO, *.*. SCHIFF, L.
TSYBESKOV, AND P.M. FAUCHET DE CURRENT-VOLTAGE CHARACTERISTICS AND
ADMITTANCE SPECTROSCOPY OF AN AL-POROUS SI BARRIER 619 K. KHIROUNI, J.C.
BOURGOIN, K. BORGI, FL. MAAREF, D. DERESMES, AND D. STIEVENARD POROUS
MICROCRYSTALLINE SILICON SOLAR CELLS 625 S.P. DUTTAGUPTA, S.K. KURINEC,
AND P.M. FAUCHET HOLOGRAPHIC GRATING IN POROUS SILICON 631 Q. LERONDEI,
M. THOENISSEN, S. SETZU, R. ROMESTAIN, AND J.C. VIAL OPTICAL SENSORS
BASED ON POROUS SILICON MULTILAYERS: A PROTOTYPE 637 W. THEISS, R.
ARENS-FISCHER, S. HILBRICH, D. SCHEYEN, M.Q. BERGER, M. KRUEGER, AND M.
THOENISSEN IMPROVED INTERFERENCE FILTER STRUCTURES MADE OF POROUS SILICON
643 M. THOENISSEN, M.Q. BERGER, M. KRUEGER, W. THEISS, S. HILBRICH, R.
ARENS-FISCHER, S. BIIIAT, AND *. LUETH FABRICATION OF 10-NM GRATINGS
USING STM CHEMICAL VAPOR DEPOSITION 649 A. ARCHER, J.M. HETRICK, AND MM.
TIAYFEH PART IX: ELECTROLUMINESCENCE AND LIGHT-EMITTING DEVICES OF
NANOCRYSTAL AND POROUS SILICON ELECTROLUMINESCENCE DEVICE PERSPECTIVES
OF SI + -LMPLANTED SI0 2 657 F. KOZLOWSKI, U.E. PORTEANU, V.
PETROVA-KOCH, AND F. KOCH ELECTROLUMINESCENT DEVICES BASED ON ZERO- AND
ONE-DIMENSIONAL SILICON STRUCTURES 663 A.Q. RIASSIOPOULOS, P.
PHOTOPOULOS, V. IOANNOU-SOUGIERIDIS, S. QRIGOROPOUIOS, AND D.
PAPADIMITRIOU XIII ELECTROLUMINESCENT DEVICES MADE FROM SILICON
NANOCRYSTALS EMBEDDED IN VARIOUS HOST MATRICES 669 OLLDARDO R. DELGADO,
HOWARD W.H. LEE, AND KHASHAYAR FAKBAZ VISIBLE LIGHT-EMITTING DIODE
EMPLOYING ELECTROCHEMICALLY ANODIZED NANOCRYSTALLINE SILICON THIN FILM
675 T. TOYAMA, T. YAMAMOTO, T. MATSUI, AND H. OKAMOTO
ELECTROLUMINESCENCE AND CARRIER TRANSPORT IN LEDS BASED ON SILICON-RICH
SILICON OXIDE 681 L. TSYBESKOV, K.D. HIRSCHMAN, S.F. DUTTAGUPTA, AND
P.M. FAUCHET PREPARATION AND CHARACTERIZATION OF THE ACTIVE LAYER FOR AN
LED BASED ON OXIDIZED POROUS SILICON 687 L. TSYBESKOV, K.D. HIRSCHMAN,
L.F. MOORE, P.M. FAUCHET, AND P.D.J. CALCOTT A STUDY OF THE FACTORS
WHICH DETERMINE THE MODULATION SPEED OF A SHALLOW PN JUNCTION POROUS
SILICON LED 693 A.J. SIMONS, T.I. COX, A. LONI, P.D.J. CALCOTT, M.J.
UREN, ANDH.T. CANHAM NONLINEAR ELECTRICAL FUNCTIONS OF POROUS SILICON
LIGHT-EMITTING DIODES 699 K. UENO, *. OZAKI, H. KOYAMA, AND TL. KOSHIDA
INTEGRATING BIPOLAR JUNCTION TRANSISTORS WITH SILICON-BASED
LIGHT-EMITTING DEVICES 705 K.D. HIRSCHMAN, L. TSYBESKOV, S.P.
DUTTAGUPTA, AND P.M. FAUCHET ELABORATION AND LIGHT EMISSION PROPERTIES
OF LOW-DOPED P-TYPE POROUS SILICON MICROCAVITIES 711 O. LERONDEL, P.
FERRAND, AND R. ROMESTAIN ENHANCEMENT OF THE SPONTANEOUS EMISSION RATES
IN ALL POROUS SILICON OPTICAL MICROCAVITIES 717 L. PAVESI, M.
CAZZANELLI, AND O. BISI PARTX: PREPARATION AND PROPERTIES OF
NANOCRYSTALLINE. MICROCRYSTALLINE. AND MICROSTRUCTURED THIN FILMS
GROWTH AND STRUCTURE OF MACROCRYSTALLINE SILICON PREPARED WITH GLOW
DISCHARGE AT VARIOUS PLASMA EXCITATION FREQUENCIES 725 F. FINGER, R.
CARIUS, P. HAPKE, L. HOUBEN, M. LUYSBERG, AND M. TZOLOV PREPARATION OF
MICROCRYSTALLINE SILICON WITH THE LAYER-BY-LAYER TECHNIQUE AT VARIOUS
PLASMA EXCITATION FREQUENCIES 737 P. HAPKE, R. CARIUS, F. FINGER, A.
LAMBERTZ, O. VETTERT, AND H. WAGNER *LNVITED PAPER XIV SUBSTRATE-SURFACE
EFFECT ON INITIAL GROWTH PROCESS OF MICROCRYSTALLINE SILICON FILMS 743 *
IKUTA, J. W. PARK, L.TI. KUO, T. YASUDA, S. YAMASAKI, AND K. TANAKA
GRAIN-SIZE CONTROL OF NANOCRYSTALLINE SILICON BY PULSED-GAS PLASMA
PROCESS 749 A. ITOH, T. IFUKU, M. OTOBE, AND S. ODA REAL-TIME MONITORING
OF HYDROGEN ELIMINATION PROCESSES IN PULSED-GAS PECVD USING IN SITU MASS
SPECTROSCOPY 755 EASWAR SRINIVASAN, JEREMY S. BORDEAUX, AND GREGORY N.
PARSONS OPTICAL AND ELECTRICAL PROPERTIES OF UNDOPED MICROCRYSTALLINE
SILICON DEPOSITED BY THE VHF-GD WITH DIFFERENT DILUTIONS OF SILANE IN
HYDROGEN 761 N. BECK, P. TORRES, J. FRIC, Z. REMES, A. PORUBA, H.A.
STUCHLIKOVAE, A. FEJFAR, N. WYRSCH, M. VANECEK, J. KOCKA, AND A. SHAH
ENLARGED PARAMETER SPACE BY USE OF VHF-GD FOR DEPOSITION OF THIN
TYPE **-SHH FILMS 767 P. TORRES, J. MEIER, R. FLUECKIGER, H. KEPPNER, AND
A. SHAH GROWTH MECHANISM OF MICROCRYSTALLINE SILICON DEPOSITED BY ECRCVD
773 /. BECKERS, E. CONRAD, P. MUELLER, N.H. NICKEL, I. SIEBER, AND W.
FUHS POST-DEPOSITION ANNEALING AND HYDROGENATION OF HOT-WIRE AMORPHOUS
AND MICROCRYSTALLINE SILICON FILMS 779 J.P. CONDE, P. BROGUEIRA, AND V.
CHU STRUCTURAL ANALYSIS OF NANOCRYSTALS EMBEDDED IN AMORPHOUS SI FILMS
785 B. QARRIDO, A. ACHIQ, J. MACIA, J.R. MORANTE, A. PEREZ-RODRIGUEZ, P.
RUTERANA, AND R. RIZK ROLE OF SIH 2 IN H NMR OF **-SKH DEPOSITED WITH
DIFFERENT PLASMA EXCITATION FREQUENCIES AND SILANE CONCENTRATIONS 791 P.
TIARI, P.C. TAYLOR, AND F. FINGER INFLUENCE OF HYDROGEN INCORPORATION
INTO SILICON ON THE ROOM-TEMPERATURE PHOTOLUMINESCENCE 797 J. RAPPICH,
TH. DITTRICH, Y. TIMOSHENKO, I. BECKERS, AND W. FUHS MICROSTRUCTURES OF
LUMINESCENT NC-SI BY EXCIMER LASER ANNEALING OF A-SI:H 803 XINFAN HUANG,
WEI WU, HONGHUI SHEN, WEI LI, XIAOYUAN CHEN, JUN XU, AND KUNJI CHEN
DEPOSITION OF PHOTOLUMINESCENT NANOCRYSTALLINE SILICON FILMS BY SIF4-SIH
4 -H 2 PLASMAS 809 Q. CICALA, O. BRUNO, P. CAPEZZUTO, L. SCHIAVULLI, V.
CAPOZZI, AND O. PERNA XV CHARGE CARRIER ABSORPTION IN DOPED
MICROCRYSTALLINE SILICON FILMS 815 M. TLEINTZE, E. HOTTER, OD. ABEL, AND
M.B. SCHUBERT PULSED ESR STUDY OF THE CONDUCTION ELECTRON SPIN CENTER IN
**-SKH 821 JIANG-HUAI ZHOU, SATOSHI YAMASAKI, JUNICHI ISOYA, KAZUYUKI
IKUTA, MICHLO HONDO, AKIHISA MATSUDA, AND KAZUNOBU TANAKA PHOTOCARRIER
RECOMBINATION IN MICROCRYSTALLINE SILICON STUDIED BY LIGHT-INDUCED
ELECTRON SPIN RESONANCE TRANSIENTS 827 J. MUELLER, F. FINGER, *. MALTEN,
AND TL. WAGNER HALL-EFFECT STUDIES ON MICROCRYSTALLINE SILICON WITH
DIFFERENT STRUCTURAL COMPOSITION AND DOPING 833 IF. BACKHAUSEN, R.
CARIUS, F. FINGER, F. *****, U. ZASTROW, AND H. WAGNER NANOCRYSTALLINE
GE SYNTHESIS BY PICOSECOND PULSED LASER INDUCED MELTING AND RAPID
SOLIDIFICATION 839 J. SOIIS, J. SIEGEL, *. OARCIA, J. JIMENEZ, AND R.
SERNA ELECTRICAL PROPERTIES OF THE MULTILAYER STRUCTURES BASED ON
ULTRATHIN DIAMONDLIKE CARBON FILMS 845 V.L. POLYAKOV, F.I. PEROV, N.M.
ROSSUKANYI, A.I. RUKOVISHNIKOV, A.V. KHOMICH, AND A.M. BARANOV
CRYSTALLINE AND ELECTRICAL PROPERTIES OF ITO SEMICONDUCTIVE FILMS
DEPOSITED BY ATMOSPHERIC RF PLASMA TECHNIQUE 851 R. W. MOSS, S. MISTURE,
D.H. LEE, R.A. CONDRATE, SR., AND X. W. WANG MORPHOTROPIC PHASE BOUNDARY
IN THE NANOCRYSTALLINE PBZR X TI]. X 0 3 SYSTEM 857 R.S. KATIYAR AND
J.F. MENG PART XI: APPLICATIONS OF NANOCRYSTALLINE AND MICROCRYSTALLINE
THIN FILMS *THE MICROMORPH CELL: A NEW WAY TO HIGH-EFFICIENCY-
LOW-TEMPERATURE CRYSTALLINE SILICON THIN-FILM CELL MANUFACTURING? 865 H.
KEPPNER, P. TORRES, J. MEIER, R. PLATZ, D. FISCHER, V. KROLL, S. DUBAIL,
J.A. ANNA SELVAN, N. PELLATON VAUCHER, Y. ZIEGLER, R. TSCHARNER, CH.
TIOF, N. BECK, M. QOETZ, P. FERNET, M. QOERLITZER, N. WYRSCH, J.
VEUILLE, J. CUPERUS, A. SHAH, AND J. POHL N-I-P MICROMORPH SOLAR CELLS
ON ALUMINUM SUBSTRATES 877 M. QOETZ, P. TORRES, P. PERNET, J. MEIER, D.
FISCHER, FI. KEPPNER, AND A. SHAH *LNVITED PAPER XVI MICROCRYSTALLINE
SILICON SOLAR CELLS AT HIGHER DEPOSITION RATES BY THE VHF-GD 883 P.
TORRES, J. MEIER, M. QOETZ, N. BECK, U. KROLI, TI. KEPPNER, AND A. SHAH
GROWTH OF THIN
M.C-SI:H ON INTRINSIC A-SI:H FOR SOLAR CELLS APPLICATION 889 P. PEMET,
M. QOETZ, TI. KEPPNER, AND A. SHAH NUCLEATION AND GROWTH OF NC-SI:H N-
AND P-TYPE LAYERS IN A-SI:H P-I-N AND N-I-P SOLAR CELLS: REAL-TIME
SPECTROELLIPSOMETRY STUDIES 895 JOOHYUN KOH, TI. FIIJIWARA, CR. WRONSKI,
AND R. W. COLLINS THIN MICROCRYSTALLINE SILICON BY A MICROWAVE REMOTE
PLASMA DEPOSITION SCHEME FOR HETEROJUNCTION SOLAR CELLS AND THIN-FILM
TRANSISTORS 901 B. JAGANNATHAN, R.L. WALLACE, AND W.A. ANDERSON
PROPERTIES OF AMORPHOUS SILICON THIN-FILM TRANSISTORS WITH
PHOSPHOROUS-DOPED HYDROGENATED MICROCRYSTALLINE SILICON 907 J.FT. CHOI,
C.W. KIM, *.*. YANG, AND J.TI. SOUK INFLUENCE OF NANOCRYSTALLINITY ON
PROPERTIES OF PHOTODIODE AND TFT IMAGE SENSOR STRUCTURE 913 A.
KOLODZIEJ, S. NOWAK, AND P. KREWNIAK INJECTION ELECTROLUMINESCENCE FROM
THIN-FILM P-I-N STRUCTURES MADE FROM NANOCRYSTALLINE HYDROGENATED
SILICON 919 A.A. ANDREEV, B.Y. AVERBOUCH, P. MAVLYANOV, S.B.
ALDABERGENOVA, M. AIBRECHT, D. STENKAMP, AND TI.P. STRUNK MICROSTRUCTURE
OF THIN-FILM PHOTOCONDUCTORS AND ITS CORRELATION WITH OPTICAL AND
ELECTRONIC PROPERTIES 925 U. KLEMENT, D. HORST, AND F. ERNST PART XII:
PREPARATION. CHARACTERIZATION. AND APPLICATIONS OF POLYCRYSTALLINE
SILICON AND OTHER CRYSTALLINE SYSTEMS CRYSTALLIZATION AND EVALUATION OF
NONSTOICHIOMETRIC SILICON-CARBON FILMS FOR HETERO THIN-FILM TRANSISTORS
933 KWANGSOO CHOI AND MASAKIYO MATSUMURA EXCIMER-LASER CRYSTALLIZATION
OF SILICON FILMS: NUMERICAL SIMULATION OF LATERAL SOLIDIFICATION 941
VIKAS V. OUPTA, TI. JIN SONG AND JAMES S. IM THE EFFECT OF FILM
THICKNESS AND PULSE DURATION VARIATION IN EXCIMER LASER CRYSTALLIZATION
OF THIN SI FILMS 947 J.P. LEONARD, M.A. BESSETTE, V.V. OUPTA, AND JAMES
S. IM INVITED PAPER XVII SINGLE-CRYSTAL SI FILMS VIA A
LOW-SUBSTRATE-TEMPERATURE EXCIMER-LASER CRYSTALLIZATION METHOD 953
ROBERT S. SPOSILI, M.A. CROWDER, AND JAMES S. IM CRYSTALLIZATION OF
SI(I- Y )C Y FILMS BY EXCIMER LASER ANNEALING: CHARACTERIZATION OF THE
MICROSTRUCTURE OF THE FILMS 959 P. BOHER, M. STEHLE, J.L. STEHLE, E.
FOGARASSY, J.J. QROB, A. QROB, AND D. MUELLER FABRICATION OF
POLYCRYSTALLINE SI THIN FILM FOR SOLAR CELLS 965 M. TANAKA, S. TSUGE, S.
KIYAMA, S. TSUDA, AND S. FIAKANO PURELY INTRINSIC POIYSILICON FILMS BY
HOT-WIRE CHEMICAL VAPOR DEPOSITION 977 J.K. RATH, K.F. FEENSTRA, D.
RUFF, H. MEILING, AND R.E.I. SCHROPP LOW-TEMPERATURE FORMATION OF
DEVICE-QUALITY POIYSILICON FILMS BY CAT-CVD METHOD 983 HIDEKI MATSUMURA,
AKIRA FLEYA, RITSUKO ILZUKA, AKIRA IZUMI, AN-QLANG HE, AND NOBUO OTSUKA
LARGE CRYSTALLITE POIYSILICON DEPOSITED USING PULSED-GAS PECVD AT
TEMPERATURES LESS THAN 250C 989 E. SRINLVASAN, S.J. ELLIS, R.J.
RIEMANICH, AND Q.TT. PARSONS EPITAXYLIKE GROWTH OF POLYCRYSTALLINE
SILICON ON THE SEED CRYSTALLITES GROWN ON GLASS 995 Y. MIYAMOTO, A.
MIIDA, AND I. SHIMIZU GROWTH OF HIGH-QUALITY POLY-SIGE ON GLASS
SUBSTRATES 1001 KUNIHIRO SHIOTA, DALSUKE INOUE, KOUICHIROU MINAMI,
MASAJI YAMAMOTO, AND JUN-LCHI TLANNA POLYCRYSTALLINE SILICON GROWN ON
POROUS SILICON-ON-LNSULATOR SUBSTRATES 1007 KLAUS Y.J. HSU, C.H. LEE,
AND C.C. YEH CHARACTERIZATION AND METROLOGY OF LOW PRESSURE CHEMICAL
VAPOR DEPOSITED (LPCVD) POIYSILICON 1013 LEO ASINOVSKY, MICHAEL SCHROTH,
FEI SHEN, AND JOHN SWEENEY, III TEMPERATURE DEPENDENT LINE-SHAPE OF THE
SILICON DANGLING BOND EPR-RESONANCE IN POLYCRYSTALLINE SILICON 1019 N.H.
NICKEL AND E.A. SCHIFF IN SITU REAL-TIME SPECTROSCOPIC ELLIPSOMETRY
APPLIED TO THE SURFACE MONITORING OF SEMICONDUCTORS 1025 P. BOHER AND
J.L. STEHLE INVITED PAPER XVIII PHOSPHORUS DOPING OF BORON CARBON
ALLOYS 1031 SEONG-DON HWANG, P.A. DOWBEN, A. CHEESEMAN, J.T. SPENCER,
AND D.N. MCIIROY THERMOELECTRIC PROPERTIES OF RHSB 3 CRYSTALS AND THIN
FILMS 1037 BAOXING CHEN, JUN-HAO XU, SIQING **, AND CTIRAD UHER AUTHOR
INDEX 1043 SUBJECT INDEX 1049 XIX
|
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| building | Verbundindex |
| bvnumber | BV011336285 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UD 8400 UQ 3100 |
| ctrlnum | (OCoLC)36284230 (DE-599)BVBBV011336285 |
| dewey-full | 537.6/226 |
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| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/226 |
| dewey-search | 537.6/226 |
| dewey-sort | 3537.6 3226 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
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| id | DE-604.BV011336285 |
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| owner | DE-29T DE-703 DE-20 DE-83 DE-91G DE-BY-TUM |
| owner_facet | DE-29T DE-703 DE-20 DE-83 DE-91G DE-BY-TUM |
| physical | XXV, 1060 S. Ill., graph. Darst. |
| publishDate | 1997 |
| publishDateSearch | 1997 |
| publishDateSort | 1997 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA eds.: Robert W. Collins ... Pittsburgh, Pa. Materials Research Soc. 1997 XXV, 1060 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 452 Luminescence Congresses Nanostructured materials Congresses Polycrystalline semiconductors Congresses Porous materials Congresses Porous silicon Congresses Semiconductors Congresses Thin film devices Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Mikrokristall (DE-588)4169828-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1996 Boston Mass. gnd-content Mikrokristall (DE-588)4169828-9 s Halbleiter (DE-588)4022993-2 s DE-604 Collins, Robert W. Sonstige oth Materials Research Society: Materials Research Society symposia proceedings 452 (DE-604)BV001899105 452 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007616038&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Luminescence Congresses Nanostructured materials Congresses Polycrystalline semiconductors Congresses Porous materials Congresses Porous silicon Congresses Semiconductors Congresses Thin film devices Congresses Halbleiter (DE-588)4022993-2 gnd Mikrokristall (DE-588)4169828-9 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4169828-9 (DE-588)1071861417 |
| title | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_auth | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_exact_search | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| title_full | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA eds.: Robert W. Collins ... |
| title_fullStr | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA eds.: Robert W. Collins ... |
| title_full_unstemmed | Advances in microcrystalline and nanocrystalline semiconductors - 1996 symposium held December 2 - 6, 1996, Boston, Massachusetts, USA eds.: Robert W. Collins ... |
| title_short | Advances in microcrystalline and nanocrystalline semiconductors - 1996 |
| title_sort | advances in microcrystalline and nanocrystalline semiconductors 1996 symposium held december 2 6 1996 boston massachusetts usa |
| title_sub | symposium held December 2 - 6, 1996, Boston, Massachusetts, USA |
| topic | Luminescence Congresses Nanostructured materials Congresses Polycrystalline semiconductors Congresses Porous materials Congresses Porous silicon Congresses Semiconductors Congresses Thin film devices Congresses Halbleiter (DE-588)4022993-2 gnd Mikrokristall (DE-588)4169828-9 gnd |
| topic_facet | Luminescence Congresses Nanostructured materials Congresses Polycrystalline semiconductors Congresses Porous materials Congresses Porous silicon Congresses Semiconductors Congresses Thin film devices Congresses Halbleiter Mikrokristall Konferenzschrift 1996 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007616038&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT collinsrobertw advancesinmicrocrystallineandnanocrystallinesemiconductors1996symposiumhelddecember261996bostonmassachusettsusa |