Characterization methods for submicron MOSFETs:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
Kluwer
1995
|
| Schriftenreihe: | The Kluwer international series in engineering and computer science
352: Analog circuits and signal processing |
| Schlagworte: | |
| Beschreibung: | Literaturverz. S. [229] - 230 |
| Beschreibung: | VII, 232 S.: graph. Darst. |
| ISBN: | 0792396952 |
Internformat
MARC
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| 245 | 1 | 0 | |a Characterization methods for submicron MOSFETs |c ed. by Hisham Haddara |
| 264 | 1 | |a Boston [u.a.] |b Kluwer |c 1995 | |
| 300 | |a VII, 232 S.: graph. Darst. | ||
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| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a The Kluwer international series in engineering and computer science |v 352: Analog circuits and signal processing | |
| 500 | |a Literaturverz. S. [229] - 230 | ||
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| 650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Mathematical models | |
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Datensatz im Suchindex
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| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| id | DE-604.BV011189204 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T18:05:29Z |
| institution | BVB |
| isbn | 0792396952 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007503925 |
| oclc_num | 33818512 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-706 |
| physical | VII, 232 S.: graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Kluwer |
| record_format | marc |
| series | The Kluwer international series in engineering and computer science |
| series2 | The Kluwer international series in engineering and computer science |
| spelling | Characterization methods for submicron MOSFETs ed. by Hisham Haddara Boston [u.a.] Kluwer 1995 VII, 232 S.: graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Kluwer international series in engineering and computer science 352: Analog circuits and signal processing Literaturverz. S. [229] - 230 Mathematisches Modell Electronic circuit design Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf Nanostruktur (DE-588)4204530-7 gnd rswk-swf MOS-FET (DE-588)4207266-9 s Nanostruktur (DE-588)4204530-7 s DE-604 Haddara, Hisham Sonstige oth The Kluwer international series in engineering and computer science 352: Analog circuits and signal processing (DE-604)BV023545171 352: Analog ci |
| spellingShingle | Characterization methods for submicron MOSFETs The Kluwer international series in engineering and computer science Mathematisches Modell Electronic circuit design Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Nanostruktur (DE-588)4204530-7 gnd |
| subject_GND | (DE-588)4207266-9 (DE-588)4204530-7 |
| title | Characterization methods for submicron MOSFETs |
| title_auth | Characterization methods for submicron MOSFETs |
| title_exact_search | Characterization methods for submicron MOSFETs |
| title_full | Characterization methods for submicron MOSFETs ed. by Hisham Haddara |
| title_fullStr | Characterization methods for submicron MOSFETs ed. by Hisham Haddara |
| title_full_unstemmed | Characterization methods for submicron MOSFETs ed. by Hisham Haddara |
| title_short | Characterization methods for submicron MOSFETs |
| title_sort | characterization methods for submicron mosfets |
| topic | Mathematisches Modell Electronic circuit design Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd Nanostruktur (DE-588)4204530-7 gnd |
| topic_facet | Mathematisches Modell Electronic circuit design Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET Nanostruktur |
| volume_link | (DE-604)BV023545171 |
| work_keys_str_mv | AT haddarahisham characterizationmethodsforsubmicronmosfets |