Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston [u.a.]
Artech House
1996
|
| Schriftenreihe: | The Artech House solid state technology and devices library
|
| Schlagworte: | |
| Beschreibung: | XI, 227 S. zahlr. graph. Darst. |
| ISBN: | 089006587X |
Internformat
MARC
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| 007 | t | ||
| 008 | 961128s1996 d||| |||| 00||| eng d | ||
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| 100 | 1 | |a Liou, Juin J. |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |c Juin J. Liou |
| 264 | 1 | |a Boston [u.a.] |b Artech House |c 1996 | |
| 300 | |a XI, 227 S. |b zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a The Artech House solid state technology and devices library | |
| 650 | 7 | |a Semiconducteurs - Jonctions |2 ram | |
| 650 | 7 | |a Semiconducteurs à l'arséniure de gallium |2 ram | |
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Gallium arsenide semiconductors | |
| 650 | 4 | |a Semiconductors |x Junctions | |
| 650 | 0 | 7 | |a Heteroübergang |0 (DE-588)4127243-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Bipolartransistor |0 (DE-588)4145669-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Aluminiumarsenid |0 (DE-588)4324566-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Bipolartransistor |0 (DE-588)4145669-5 |D s |
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Datensatz im Suchindex
| _version_ | 1804125575221084160 |
|---|---|
| any_adam_object | |
| author | Liou, Juin J. |
| author_facet | Liou, Juin J. |
| author_role | aut |
| author_sort | Liou, Juin J. |
| author_variant | j j l jj jjl |
| building | Verbundindex |
| bvnumber | BV011085872 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.96.B55 |
| callnumber-search | TK7871.96.B55 |
| callnumber-sort | TK 47871.96 B55 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UX 2150 ZN 4850 |
| classification_tum | ELT 280f ELT 315f |
| ctrlnum | (OCoLC)34046345 (DE-599)BVBBV011085872 |
| dewey-full | 621.3815/282 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/282 |
| dewey-search | 621.3815/282 |
| dewey-sort | 3621.3815 3282 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV011085872 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:03:44Z |
| institution | BVB |
| isbn | 089006587X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007425679 |
| oclc_num | 34046345 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-83 DE-11 |
| physical | XI, 227 S. zahlr. graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Artech House |
| record_format | marc |
| series2 | The Artech House solid state technology and devices library |
| spelling | Liou, Juin J. Verfasser aut Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou Boston [u.a.] Artech House 1996 XI, 227 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Artech House solid state technology and devices library Semiconducteurs - Jonctions ram Semiconducteurs à l'arséniure de gallium ram Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang (DE-588)4127243-2 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 s Galliumarsenid (DE-588)4019155-2 s Aluminiumarsenid (DE-588)4324566-3 s Heteroübergang (DE-588)4127243-2 s DE-604 |
| spellingShingle | Liou, Juin J. Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Semiconducteurs - Jonctions ram Semiconducteurs à l'arséniure de gallium ram Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang (DE-588)4127243-2 gnd Bipolartransistor (DE-588)4145669-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4127243-2 (DE-588)4145669-5 (DE-588)4324566-3 (DE-588)4019155-2 |
| title | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_auth | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_exact_search | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_full | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_fullStr | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_full_unstemmed | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors Juin J. Liou |
| title_short | Principles and analysis of AlGaAs-GaAs heterojunction bipolar transistors |
| title_sort | principles and analysis of algaas gaas heterojunction bipolar transistors |
| topic | Semiconducteurs - Jonctions ram Semiconducteurs à l'arséniure de gallium ram Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang (DE-588)4127243-2 gnd Bipolartransistor (DE-588)4145669-5 gnd Aluminiumarsenid (DE-588)4324566-3 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Semiconducteurs - Jonctions Semiconducteurs à l'arséniure de gallium Bipolar transistors Gallium arsenide semiconductors Semiconductors Junctions Heteroübergang Bipolartransistor Aluminiumarsenid Galliumarsenid |
| work_keys_str_mv | AT lioujuinj principlesandanalysisofalgaasgaasheterojunctionbipolartransistors |