Heterostructure epitaxy and devices: [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995]
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | Undetermined |
| Veröffentlicht: |
Dordrecht [u.a.]
Kluwer
1996
|
| Schriftenreihe: | NATO: [NATO ASI series / 3]
11 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 323 S. Ill., graph. Darst. |
| ISBN: | 0792340183 |
Internformat
MARC
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| 245 | 1 | 0 | |a Heterostructure epitaxy and devices |b [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] |c ed. by Jozef Novák ... [HEAD '95] |
| 264 | 1 | |a Dordrecht [u.a.] |b Kluwer |c 1996 | |
| 300 | |a XIII, 323 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a NATO: [NATO ASI series / 3] |v 11 | |
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| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
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| 689 | 0 | 1 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
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| 700 | 1 | |a Novák, Jozef |e Sonstige |4 oth | |
| 810 | 2 | |a 3] |t NATO: [NATO ASI series |v 11 |w (DE-604)BV010438356 |9 11 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007394009&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007394009 | ||
Datensatz im Suchindex
| _version_ | 1804125531730345985 |
|---|---|
| adam_text | CONTENTS
PREFACE
xiii
SECTION
I. EPITAXIAL GROWTH
Simulation of
ΙΠ
-V
layer growth (invited)
Y.
Arima
and T. Irisawa
..................................................................................................................1
Real time monitoring of epitaxial growth (invited)
W.
Richter,
K. Knorr,
T. Zettlerand M.
Zorn...............................................................................
U
Influence of carrier gas on AlAs, GaAs and InP
MOCVD
growth
S.
Hasenöhrl,
H.
Hardtdegen andChr.Ungermanns.
....................................................................21
LP-MOVPE of
Ш
-V
semiconductors using highly pure
N2 as the carrier gas
H. Hardtdegen, M.
Hollfelder,
S. Hon, R.
Carins
and
Chr. Ungermanns.....................................25
Dependence of properties of
LP MOCVD
InGaP layers on growth conditions
R. Kúdela,
l.Vâvra,
J. Novák
and
M. Kučera
................................................................................29
Growth of GaN MOCVD layers on GaN single crystals
K.
Pakuła,
A. Wy
šmolek
, K.P.
Korona,
J.M.
Baranowski,
R.
Stepniewski, I. Grzegory,
M. Bockowski, J.
Jun,
S.
Krukowski,
M.
Wroblewski and S.Porowski
.......................................¡33
Electrical and optical properties of Te-doped GaSb grown by MOVPE
K. HjeltandT. Tuomi
....................................................................................................................37
Computer simulations of epitaxial growth, surface kinetic processes
and RHEED intensity oscillations
D. Papajová, Š.
Németh
and M.
Veselý
.........................................................................................41
Growth and characterization of InP/Ga0_47
^0,53
As deposited by MOMBE
M.v.d. Ahe,
Chr.
Ungermanns, H. Hardtdegen, A.
Förster,
В.
Setzer
and
H.
Lüth.......................45
Investigation
of the effect of GaAs buffer layers grown by MBE
at different temperatures on the performance of GaAs MESFETs
M.
bagadas,
M. Androulidaki, G. Constantinidis,
N.
Kornilios andZ. Hatzopoulos
...................49
Multilayered GaAs VPE structures for micro machining
K.
Somogyi,
Sz.
Varga,
Ch.
Grattepaìn
and
L.
Dobos
..................................................................53
VUl
Growth of InP and
GaïnAsP
layers by liquid-phase epitaxy using holmium
gettering
and doping
O. Procházková,
F Šrobár, J.
Novotný
and J.
Zavadil
.................................................................57
Meander
type LPE and high temperature stability
of elastically strained GalnAsP/InP layers
D. Nohavica,
K.P.
Homewood, W.P. Gillin,
U.A.
Lourenco, Z. Yang,
J. Oswald and D.
Ehrentraut.........................................................................................................61
SECTION II. HETEROSTRUCTURES
Scanning tunneling microscopy characterization of heterostructures
E.R. Weber, J.-F. Zheng and X. Liu
..............................................................................................65
Microscopic origin of femtosecond spectral hole burning in quantum wells
A. Masková andM.Moško...........................................................................................................
75
Carrier capture due to carrier-carrier interaction in quantum wells
K. Kálna
and M. MoSko
...............................................................................................................79
Optical and theoretical study of GaAs quantum wells embedded
in GaAs/AlAs superlattices
V. Donchev,
I. Ivanov
and K. Germanova
.....................................................................................83
MOCVD growth and characterization of InAs/GaAs superlattices
M. Černiansky. J.Kováč
and V. Gottschakh
.................................................................................87
Electrical characteristics of epitaxial
AI/Al
xGa
ţ.z
As
/n-
Al a^sGa «,?j As
heterostructures
Zs.J.
Horváth
and
L
Dozsa
...........................................................................................................91
Investigation of a GaAs heterostructure with an AlAs potential
barrier by DLTS measurements
L.
Stuchlíková,
L. Harmatha,, J.
Kovái,
A. Kováčik,
V. Gottschakh
and B.
Rheinlander........................................................................................................................95
Effect of heterobarriers on the DX center in AlGaAsSb and in GaAlAs
L
Dózsa,
P.
Hubik, J.
Kristofik
and
N. Terziev.
............................................................................99
Mechanical study of the strained
h^Gai* As/GaAs
heterostructures
Å.
Nemcsics, J.
Szabó,
S.
GurbánandL. Csontos
.......................................................................103
Hot electrons at semiconductor heterojunctions
M. Horák
.....................................................................................................................................
lù7
їх
SECTION
ІП.
COMPOSITE
SYSTEMS
in/V-compound
semiconductors on
silicon
(invited)
A.Schlachetzki.............................................................................................................................
IH
Crystal growth of column III nitrides by OMVPE (invited)
I. Akasaki and H.
Amano
.............................................................................................................125
GaSb dots grown on GaAs surface by MOCVD
R. Bozek, J.M. Baranowski, R. Stepniewski and J.
Wróbel
.........................................................135
Crystallographic tilting in lattice-mismatched heteroepitaxy:
a kinetic approach
F.Riesz
........................................................................................................................................139
Optimization of MOYPE growth for InGaAs on
(001
)Si
H.-H. Wehmann, G.-P. Tang, H. Iber, S. Mo, A. Schlachetzki and
L Malacky..........................
143
SEM-based characterization techniques for strongly
mismatched heteroepitaxy
E.
Peiner, S. Mo, H. Iber, G.-P.
Tang and
A. Schlachetzki
.........................................................147
Defect characterization of strained InGaAs structures
prepared on InP and GaAs
R. Srnanek, J. Kovac,
I. Novotný,
J. Skriniarova,
S.
Németh,
B.Opitz
and
A.Kohl
....................153
Influence of the temperature on the morphology and crystal quality
of
МВБ
grown InAs/GaAs heterostructures
L. Francesio, P. Franzosi, S.
Gennari,
L.
Nasi,
G. Salviati,
M.R. Bruni, G. Padeletti andM.G.
Simeoné
...............................................................................157
SECTION IVtCHARACTERIZATION
Study of fundamental growth mechanism by atomic force microscopy (invited)
C.C.Hsu.J.B.Xuandl.H. Wilson
..............................................................................................161
Characterisation of the epitaxial layers using the lift-off technique (invited)
J.Novák
.......................................................................................................................................173
Many crystal X-ray diffractometry on super-lattices (invited)
V.Holý.
........................................................................................................................................183
χ
Quantum magnetotransport in
two-dimensional electron
gas
in InGaAs/InP heterostructures
B. Pödör, C. Combos, Gy.
Kovács,
I.G.
Saveľev,
V.S. Novikov and G.
Reményi
......................193
Transport
properties of MBE GaAs layers grown at 420°C
M.
Morvic,
J.
Betko,
J. Novák, A.
Förster
and P. Kordoš
...........................................................197
Donor neutralisation by hydrogen in
S
and
Se
doped GaAs and GaAlAs
K.
Somogyi,
В.
Theys,
L.
Csontos,
Sz.
Varga
and
J.
Chevallier
..................................................201
Comparison of
photoluminescence
spectra of MOCVD
and VPE grown GaAs layers
K.Somogyi
...................................................................................................................................205
X-ray diffraction study of MOCVD grown InGaP
D. Korytár, L.
Francesio and
R.
Kůdela.....................................................................................
209
Structural and optical properties of ordered domains in InGaP2 alloys
L
Nasi,
F.
Fermi,
M.
Mazzer,
C. Zanotti-Fregonara, L.
Vitali,
F. Vidimari
and
G. Sahiati
.............................................................................................................................213
Ordering in InGaP prepared by MOCVD
K Dobráčka,
I.
Vávra,
R. KúdelaandF. Harvanka
...................................................................217
Ti/PťAu
ohmic contacts to
p-type InGaP
K.Vogel, V. Malina and P.
Réssel
...............................................................................................221
Comparison of physical properties of bulk crystals and
epitaxial layers of GaN
H. Teisseyre, M.
Leszczyński,
T.
Suski,
P.
Perlin,
J.
Jun,
I. Grzegory,
M. Bockowski,
S. Porawski,
Т.О.
Moustakas, J. Major and W. Gebicki
.............................................................225
SECTION
V.
DEVICES
MOCVD
growth of GabJn.ASyPj.y-GaAs
quantum structures
(invited)
M. Razeghi, J.
Hoff,
M. Erdtmann, S.
Kim,
D.
Wu,
E. Kaas,
С.
Jelen,
S.
Slivken,
I.
Eliashevich. J.
Diaz,
E.
Bigan, G.J.
Brown and
S. Javadpow.
................................................229
InP-based HBT:
principle,
design
and technology (invited)
J.L Pelouard
................................................................................................................247
Technology and properties of aluminium-free pseudomorphic
HEMTs based
ob InP/lnGaAs
structures (invited)
P.
Kordoš
..................................................................................... 257
Xl
Tunneling heterostructure devices (invited)
H.lMth
.........................................................................................................................................267
InGaAs/GaAs pseudomorphic double delta doped HEMTs
L.
Malacký,
J.
Kuzmik,
Z. Mozolová,
M. Kučera, K.
Lübke
andH.-H.Wehmann
.......................277
Alpha particle radiation effects in high electron mobility transistors
G.J. Papaioannou, M.J. Papastamatiou,
N.
Arpatzanis, P. Dimitrakis,
C. Michelakis and Z. Hatzopoulos
..............................................................................................281
Single versus double current bistability in resonant-tunnelling devices
T. Figielski, T. WosinskiandA.
Mákosa
.....................................................................................285
Heterostructure lasers based on GaSb and InAs for spectroscopy
E. Hulicius.T.
Šimeček,
A. Hospodkova, J. Oswald, C.
Alibert, A.N.
Baranov,
YU.P. Yakovlev, A.M. Utvak, P. WerleandR.
Mücke.................................................................289
AlAs and InGaP potential barrier photodetector grown on vicinal surfaces
KRedhammer,
J. Kováč, Š.
Németh,
V.
Gottschalch, B.
Rheinländer,
A. Kováčik and J.Škriniarová
......................................................................................................293
GaP-based diodes for electrometric applications
I.A.
Bocharova,
S.A.
Malyshev, L.N. SurviloandYu.V. Trofimov.
..............................................297
Design
of InGaAs/InAlGaAs/InP RCE
PIN photodiode
A. Šatka,
D.W.E.
Allsopp, J. Kováč, F.
Uherek,
B.
Rheinländer
and V. Gottschalch
.................301
InP/GalnAs MSM photodetector
for simple integration in
HEMT
circuits
M
Horstmann,
M.
Morso,
К.
Schimpf,
H.
Hardtdegen,
M.
Hollfelder
and P. Kordoš
...............305
Nature
of internal feedback in the self-electro-optic effect devices
F.Šrobár
.....................................................................................................................................309
Optoelectronic integrated circuit
A2 B*-insulator- A3B5
with positive feedback
S.A.
Manego, A.S. Posedko, L.N. Survilo and Yu.V.
Trofimov
....................................................313
Characteristics of multiple delta doped GaAs structures
T. Latinský, J.
Šafránková, Z Mozolová,
R.
Harmon,
S.
Németh
and M.
Bujdák
.......................317
SUBJECT
INDEX.
......................................................................................................321
|
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| genre | (DE-588)1071861417 Konferenzschrift 1995 Smolenice Castle gnd-content |
| genre_facet | Konferenzschrift 1995 Smolenice Castle |
| id | DE-604.BV011042484 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:03:03Z |
| institution | BVB |
| isbn | 0792340183 |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007394009 |
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| physical | XIII, 323 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Kluwer |
| record_format | marc |
| series2 | NATO: [NATO ASI series / 3] |
| spelling | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] ed. by Jozef Novák ... [HEAD '95] Dordrecht [u.a.] Kluwer 1996 XIII, 323 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier NATO: [NATO ASI series / 3] 11 Epitaxie (DE-588)4152545-0 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1995 Smolenice Castle gnd-content Epitaxie (DE-588)4152545-0 s Heterostruktur (DE-588)4123378-5 s DE-604 Novák, Jozef Sonstige oth 3] NATO: [NATO ASI series 11 (DE-604)BV010438356 11 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007394009&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] Epitaxie (DE-588)4152545-0 gnd Heterostruktur (DE-588)4123378-5 gnd |
| subject_GND | (DE-588)4152545-0 (DE-588)4123378-5 (DE-588)1071861417 |
| title | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] |
| title_auth | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] |
| title_exact_search | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] |
| title_full | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] ed. by Jozef Novák ... [HEAD '95] |
| title_fullStr | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] ed. by Jozef Novák ... [HEAD '95] |
| title_full_unstemmed | Heterostructure epitaxy and devices [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] ed. by Jozef Novák ... [HEAD '95] |
| title_short | Heterostructure epitaxy and devices |
| title_sort | heterostructure epitaxy and devices proceedings of the nato advanced research workshop on heterostructure epitaxy and devices smolenice castle slovakia october 15 19 1995 |
| title_sub | [Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, Smolenice Castle, Slovakia, October 15 - 19, 1995] |
| topic | Epitaxie (DE-588)4152545-0 gnd Heterostruktur (DE-588)4123378-5 gnd |
| topic_facet | Epitaxie Heterostruktur Konferenzschrift 1995 Smolenice Castle |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007394009&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV010438356 |
| work_keys_str_mv | AT novakjozef heterostructureepitaxyanddevicesproceedingsofthenatoadvancedresearchworkshoponheterostructureepitaxyanddevicessmolenicecastleslovakiaoctober15191995 |