Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Hamburg
DESY
1996
|
| Schriftenreihe: | Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht / F 35 D]
1996,12 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zugl.: Hamburg, Univ., Diss., 1996 |
| Beschreibung: | 130 Sp. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV010938401 | ||
| 003 | DE-604 | ||
| 005 | 19970128 | ||
| 007 | t | ||
| 008 | 960902s1996 gw ad|| tm|| 00||| ger d | ||
| 016 | 7 | |a 948228873 |2 DE-101 | |
| 035 | |a (OCoLC)68669381 | ||
| 035 | |a (DE-599)BVBBV010938401 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-12 |a DE-29T |a DE-355 | ||
| 080 | |a 29 | ||
| 080 | |a 37 | ||
| 084 | |a UN 6250 |0 (DE-625)146157: |2 rvk | ||
| 088 | |a DESY F35D 96 12 | ||
| 100 | 1 | |a Böttcher, Stephan |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |c vorgelegt von Stephan Böttcher. [DESY] |
| 264 | 1 | |a Hamburg |b DESY |c 1996 | |
| 300 | |a 130 Sp. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht / F 35 D] |v 1996,12 | |
| 500 | |a Zugl.: Hamburg, Univ., Diss., 1996 | ||
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 810 | 2 | |a F 35 D] |t Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht |v 1996,12 |w (DE-604)BV008832619 |9 1996,12 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007316733&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 943 | 1 | |a oai:aleph.bib-bvb.de:BVB01-007316733 | |
Datensatz im Suchindex
| _version_ | 1808046366857887744 |
|---|---|
| adam_text |
CONTENTS
1
THE
ZEUS
EXPERIMENT
AT
HERA
17
1.1
DESCRIPTION
OF
THE
DETECTOR
.
17
1.1.1
TRACKING
DETECTORS
.
18
1.1.2
CALORIMETRY
.
19
1.1.3
MUON
SPECTROMETERS
AND
BACKING
CALORIMETER
.
20
1.1.4
ZEUS
THREE
LEVEL
TRIGGER
.
21
1.2
THE
CALORIMETER
READ
OUT
ELECTRONICS
.
22
1.2.1
THE
ZEUS
ANALOG
PIPELINE
MEMORY
CHIP
.
24
1.2.2
RADIATION
ENVIRONMENT
AT
ZEUS
.
29
1.2.3
RADIATION
HARDNESS
OF
THE
PIPELINE
MEMORY
.
29
2
RADIATION
HARDNESS
OF
CMOS
ELECTRONICS
31
2.1
PHYSICS
OF
THE
MOS
STRUCTURE
.
31
2.1.1
THE
SILICON
MOS
CAPACITOR
.
31
2.1.2
BIAS
VOLTAGE
REGIMES
.
33
2.1.3
LOW
FREQUENCY
MOS
CAPACITANCE
.
36
2.2
BASIC
EFFECTS
OF
IONIZING
IRRADIATION
IN
MOS
DEVICES
.
40
2.2.1
TRAPPED
OXIDE
CHARGE
.
41
2.2.2
INTERFACE
TRAPS
.
41
2.3
IRRADIATION
RESPONSE
OF
MOS-TRANSISTORS
.
42
2.3.1
THRESHOLD
VOLTAGE
SHIFT
.
44
2.3.2
GATE
EDGE
LEAKAGE
CURRENT
.
45
2.3.3
MOBILITY
DEGRADATION
.
46
2.4
IMPLEMENTATION
OF
THE
PIPELINE
MEMORY
CIRCUIT
.
46
2.4.1
RADIATION
TOLERANT
TRANSISTOR
LAYOUT
.
46
2.4.2
THE
PROCESS
TECHNOLOGY
.
47
2.4.3
THE
TEST
INSERT
CHIP
.
49
3
IRRADIATION
AND
MEASUREMENT
PROCEDURES
55
3.1
IRRADIATION
.
55
3.1.1
SOURCE
.
56
3.1.2
TEST
INSERT
IRRADIATION
.
56
3.1.3
PIPELINE
MEMORY
IRRADIATION
.
57
3.2
MEASUREMENTS
WITH
THE
PIPELINE
MEMORY
.
58
3.2.1
DATASET
.
60
3.3
MEASUREMENTS
ON
MOS
TRANSISTORS
.
61
3.3.1
MEASUREMENT
SETUP
.
62
3.3.2
DATASET
.
62
3.4
MEASUREMENTS
ON
MOS
CAPACITORS
.
63
3.4.1
MEASUREMENT
SETUP
.
64
4
RADIATION
EFFECTS
IN
NMOS-TRANSISTORS
65
4.1
THRESHOLD
VOLTAGE
SHIFT
.
66
4.1.1
PRACTICAL
DEFINITION
OF
V
T
H
.
66
4.1.2
BIAS
DEPENDENCE
.
68
4.1.3
DOSE
DEPENDENCE
.
68
4.2
INTERFACE
TRAP
GENERATION
.
69
4.2.1
THE
SUB-THRESHOLD
SLOPE
METHOD
.
69
4.2.2
STATIC
TRANSCONDUCTANCE
DEGRADATION
.
72
5
RADIATION
EFFECTS
IN
MOS
CAPACITORS
75
5.1
STATIC
CAPACITOR
PROPERTIES
.
76
5.1.1
SERIES
RESISTANCE
CORRECTION
.
76
5.1.2
OXIDE
CAPACITANCE
.
78
5.1.3
SUBSTRATE
IMPURITY
CONCENTRATION
.
80
5.2
SURFACE
POTENTIAL
.
83
5.2.1
MAPPING
THE
SURFACE
POTENTIAL
THROUGH
THE
CAPACITANCE
83
5.2.2
SURFACE
POTENTIAL
FROM
INTEGRATING
THE
CV-CURVE
.
84
5.3
RADIATION
EFFECTS
.
86
5.3.1
INTERFACE
TRAP
DENSITY
FROM
THE
SURFACE
CHARGE
GRADIENT
86
5.4
INTERFACE
TRAP
ADMITTANCE
.
90
5.4.1
INTERFACE
TRAP
ADMITTANCE
MODEL
.
90
5.4.2
METHODS
TO
EXTRACT
INTERFACE
TRAP
PROPERTIES
FROM
THE
CONDUCTANCE
.
99
5.4.3
INTERFACE
TRAP
CAPACITANCE
MODEL
FIT
.
100
5.4.4
RESULTS
ON
INTERFACE
TRAP
PROPERTIES
IN
DEPLETION
.
105
5.4.5
INTERFACE
TRAP
DENSITY
SUMMARY
.
109
6
RADIATION
EFFECTS
IN
THE
ZEUS
PIPELINE
113
6.1
SUPPLY
CURRENTS
.
113
6.2
PIPELINE
GAIN
AND
PEDESTAL
.
117
6.2.1
CELL
GAIN
.
118
6.2.2
CELL
PEDESTAL
.
119
6.3
STORAGE
CELL
LEAKAGE
CURRENT
.
121
6.3.1
DEPENDENCE
ON
THE
CELL
STATUS
DURING
IRRADIATION
.
.
.
.123
7
CONCLUSIONS
125
7.1
DISCRETE
DEVICES
.
125
7.1.1
THRESHOLD
VOLTAGE
SHIFT
.
126
7.1.2
INTERFACE
TRAPS
.
126
7.2
RADIATION
EFFECTS
IN
THE
PIPELINE
MEMORY
CIRCUIT
.
127
7.2.1
STATIC
DIGITAL
SUPPLY
CURRENT
.
128
7.2.2
ANALOG
AMPLIFIER
BIAS
CURRENTS,
PIPELINE
GAIN
.
128
7.2.3
PIPELINE
PEDESTAL
.
129
7.2.4
CELL
LEAKAGE
CURRENT
.
129
7.3
SUMMARY
.
130 |
| any_adam_object | 1 |
| author | Böttcher, Stephan |
| author_facet | Böttcher, Stephan |
| author_role | aut |
| author_sort | Böttcher, Stephan |
| author_variant | s b sb |
| building | Verbundindex |
| bvnumber | BV010938401 |
| classification_rvk | UN 6250 |
| ctrlnum | (OCoLC)68669381 (DE-599)BVBBV010938401 |
| discipline | Physik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV010938401</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19970128</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">960902s1996 gw ad|| tm|| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">948228873</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)68669381</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010938401</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-355</subfield></datafield><datafield tag="080" ind1=" " ind2=" "><subfield code="a">29</subfield></datafield><datafield tag="080" ind1=" " ind2=" "><subfield code="a">37</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UN 6250</subfield><subfield code="0">(DE-625)146157:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="088" ind1=" " ind2=" "><subfield code="a">DESY F35D 96 12</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Böttcher, Stephan</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors</subfield><subfield code="c">vorgelegt von Stephan Böttcher. [DESY]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Hamburg</subfield><subfield code="b">DESY</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">130 Sp.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht / F 35 D]</subfield><subfield code="v">1996,12</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Zugl.: Hamburg, Univ., Diss., 1996</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="810" ind1="2" ind2=" "><subfield code="a">F 35 D]</subfield><subfield code="t">Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht</subfield><subfield code="v">1996,12</subfield><subfield code="w">(DE-604)BV008832619</subfield><subfield code="9">1996,12</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007316733&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="943" ind1="1" ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007316733</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010938401 |
| illustrated | Illustrated |
| indexdate | 2024-08-22T00:43:00Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007316733 |
| oclc_num | 68669381 |
| open_access_boolean | |
| owner | DE-12 DE-29T DE-355 DE-BY-UBR |
| owner_facet | DE-12 DE-29T DE-355 DE-BY-UBR |
| physical | 130 Sp. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | DESY |
| record_format | marc |
| series2 | Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht / F 35 D] |
| spelling | Böttcher, Stephan Verfasser aut Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors vorgelegt von Stephan Böttcher. [DESY] Hamburg DESY 1996 130 Sp. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht / F 35 D] 1996,12 Zugl.: Hamburg, Univ., Diss., 1996 (DE-588)4113937-9 Hochschulschrift gnd-content F 35 D] Deutsches Elektronen-Synchrotron <Hamburg>: [Interner Bericht 1996,12 (DE-604)BV008832619 1996,12 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007316733&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Böttcher, Stephan Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |
| subject_GND | (DE-588)4113937-9 |
| title | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |
| title_auth | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |
| title_exact_search | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |
| title_full | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors vorgelegt von Stephan Böttcher. [DESY] |
| title_fullStr | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors vorgelegt von Stephan Böttcher. [DESY] |
| title_full_unstemmed | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors vorgelegt von Stephan Böttcher. [DESY] |
| title_short | Study of the radiation damage in analog CMOS pipelines, MOS transistors, and MOS capacitors |
| title_sort | study of the radiation damage in analog cmos pipelines mos transistors and mos capacitors |
| topic_facet | Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007316733&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV008832619 |
| work_keys_str_mv | AT bottcherstephan studyoftheradiationdamageinanalogcmospipelinesmostransistorsandmoscapacitors |