CVD of nonmetals:
Gespeichert in:
Format: | Buch |
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Sprache: | German |
Veröffentlicht: |
Weinheim [u.a.]
VCH
1996
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Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XVI, 424 S. Ill. |
ISBN: | 3527292950 |
Internformat
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245 | 1 | 0 | |a CVD of nonmetals |c ed. by William S. Rees, jr. |
264 | 1 | |a Weinheim [u.a.] |b VCH |c 1996 | |
300 | |a XVI, 424 S. |b Ill. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Dépôt chimique en phase vapeur | |
650 | 7 | |a Dépôt chimique en phase vapeur |2 ram | |
650 | 4 | |a Non-métaux | |
650 | 7 | |a Non-métaux |2 ram | |
650 | 4 | |a Chemical vapor deposition | |
650 | 4 | |a Nonmetals | |
650 | 0 | 7 | |a Nichtmetallischer Werkstoff |0 (DE-588)4171773-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
689 | 0 | 1 | |a Nichtmetallischer Werkstoff |0 (DE-588)4171773-9 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Rees, William S. |e Sonstige |4 oth | |
856 | 4 | 2 | |m HBZ Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007293075&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
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adam_text | Contents
1. Introduction
William S. Rees, Jr.
1.1 Organization of the Book 2
1.1.1 Scope of the Book 2
1.1.2 Potential Audience 3
1.1.3 Selection of Chapter Topics 3
1.1.4 Chapter Organization 3
1.1.4.1 Cross-References Between Chapters 3
1.1.4.2 Where to Find a Topic 3
1.2 Uses of Materials 3
1.2.1 Electronic Applications 4
1.2.1.1 Band Gap Classifications 4
1.2.2 Optical Applications 4
1.2.3 Structural Applications 4
1.3 Comparison of Deposition Techniques 5
1.3.1 Comparison of Chemical Vapor Deposition Sub-Techniques 5
1.3.1.1 Organometallic Vapor Phase Epitaxy (OMVPE) 6
1.3.1.2 Plasma CVD 6
1.3.1.3 Photo CVD 7
1.3.1.4 Pressure Modifications in CVD 8
1.3.1.5 Spray Pyrolysis Modifications 8
1.3.2 Comparison of Non-Chemical Vapor Deposition Technologies 9
1.3.2.1 Molecular Beam Epitaxy (MBE) 9
1.3.2.2 Other Physical Vapor Deposition Techniques 10
1.4 General Comments on CVD 10
1.4.1 Reactor Types 10
1.4.2 Important Reaction Locations in CVD Reactors 11
1.5 Experimental Design 12
1.5.1 System Configuration 12
1.5.1.1 System Reactant Input 12
1.5.1.2 Reaction Zones 17
1.5.1.3 Reaction Co-Product Removal System 19
1.5.2 Handling of Precursors 20
1.5.3 Methods of Energy Input 21
1.5.3.1 Thermal CVD 21
1.5.3.2 Alternate Modes 22
1.5.4 Vapor Analysis in CVD 23
1.6 Reaction Kinetics in CVD 23
1.6.1 General Comments 23
X Contents
1.6.2 Vapor Phase Reactions 24
1.6.3 Vapor-Solid Phase Reactions 24
1.6.4 Solid Phase Reactions 26
1.6.5 Control of Reaction Location 26
1.6.6 Rate-Determining Steps in CVD 26
1.6.7 Temperature and Growth Rate Effects 29
1.7 Thermodynamics in CVD 29
1.8 General Comments on Precursors 30
1.8.1 Design Considerations 30
1.8.2 Structural Motifs 32
1.8.3 Mechanistic Insights 35
1.9 References 35
2. Superconducting Materials
Douglas L. Schulz and Tobin J. Marks
2.1 Introduction 39
2.2 Overview of Superconductivity 40
2.2.1 Physical Properties of Superconductors 40
2.2.2 Low Temperature Superconducting Materials 43
2.2.2.1 Crystal Structures of LTS Materials 43
2.2.3 High Temperature Superconducting Materials 44
2.2.3.1 Crystal Structure of HTS Materials 44
2.2.4 Applications of Superconductors 48
2.2.4.1 Large-Scale Applications of Superconducting Magnets 48
2.2.4.2 Low-Field Applications of Superconductors 49
2.2.4.3 Superconducting Electronics Applications 50
2.3 CVD of LTS Materials 52
2.3.1 Nb3Sn CVD Film Growth 52
2.3.1.1 Nb3Sn CVD Precursors and Reaction Schemes 53
2.3.1.2 Nb3Sn CVD Reactor Design 53
2.3.1.3 Substrates for Nb3Sn CVD 54
2.3.1.4 Physical Properties of CVD-Derived Nb3Sn Films 55
2.3.2 Nb3Ge CVD Film Growth 56
2.3.2.1 Nb3Ge CVD Precursors and Reaction Schemes 56
2.3.2.2 Nb3Ge CVD Reactor Design 57
2.3.2.3 Physical Properties of CVD-Derived Nb3Ge Films 57
2.3.2.4 Effects of Chemical Doping Upon Physical Properties of
CVD-Derived Nb3Ge Films 58
2.3.3 NbC,_vNy CVD Film Growth 59
2.3.3.1 NbC^Ny CVD Precursors and Reaction Schemes 60
2.3.3.2 Reactor Design for CVD of NbC^N,, on Carbon Fiber 61
2.3.3.3 Physical Properties of CVD-Derived NbCi_yNy Films 62
2.3.4 NbN CVD Film Growth 62
2.3.4.1 NbN CVD Precursors and Reaction Schemes 63
Contents XI
2.3.4.2 Physical Properties of CVD-Derived NbN Films 63
2.3.5 CVD of Other LTS Materials 64
2.3.5.1 Nb3Si CVD Film Growth 64
2.3.5.2 V3Si CVD Film Growth 64
2.3.5.3 V3Ge CVD Film Growth 65
2.3.5.4 Nb3Ga CVD Film Growth 65
2.3.5.5 TiCi_yNj, CVD Film Growth 65
2.3.5.6 W^Gey CVD Film Growth 66
2.3.5.7 Ta CVD Film Growth 66
2.3.5.8 LTS Film Growth by CVD of Hydrides and Organometallics on
HotWires 66
2.3.6 Thermodynamic Analysis of LTS CVD 67
2.4 CVD of HTS Materials 67
2.4.1 CVD Precursor Design Strategies for HTS Materials 68
2.4.1.1 Metal P-Diketonate Complexes for HTS CVD 69
2.4.1.2 Limitations of Alkaline Earth /J-Diketonate Complexes for HTS CVD . 71
2.4.1.3 New Barium Precursors for CVD of HTS Materials 71
2.4.2 CVD of YBCO 74
2.4.2.1 Compositional Analysis of CVD-Derived YBCO Films 74
2.4.2.2 Structural Orientations of YBCO Films by CVD 78
2.4.2.3 Low Temperature CVD of YBCO Using N2O as a Reactant Gas 83
2.4.2.4 Plasma-Enhanced CVD of YBCO 84
2.4.2.5 CVD of YBCO Films Using Other Precursors 85
2.4.2.6 Alternative Precursor Delivery Systems 87
2.4.2.7 CVD Processing of Technologically Related YBCO Films 90
2.4.2.8 CVD of YBa2Cu4Os 91
2.4.2.9 Thermodynamic Analysis of YBCO CVD 92
2.4.3 CVD of BSCCO Ill
2.4.3.1 In Situ CVD Growth of BSCCO 112
2.4.3.2 BSCCO Films by CVD Using Fluorinated Metal-Organic Precursors . . 115
2.4.3.3 Doping Studies in the CVD of BSCCO Thin Films 116
2.4.3.4 CVD of BSCCO on Novel Substrates 117
2.4.3.5 Novel BSCCO Film Orientations 117
2.4.3.6 Novel CVD Routes to BSCCO Thin Films 118
2.3.4.7 Halide CVD of BSCCO Thin Films 119
2.4.3.8 Thermodynamic Analysis of BSCCO CVD 120
2.4.4 CVD of TBCCO 121
2.4.4.1 CVD of TBCCO Thin Films on Single Crystal Substrates 121
2.4.4.2 CVD of TBCCO Thin Films on Metallic Substrates 128
2.4.4.3 Doping Studies for CVD of TBCCO Thin Films 129
2.4.4.4 Mist Microwave-Plasma CVD of (Tl, Pb)-Sr-Ca-Cu-O Films 129
2.4.4.5 Thermodynamic Analysis of TBCCO CVD 129
2.5 CVD of HTS Lattice-Matched Metal Oxides 132
2.6 Conclusions 136
References 137
XII Contents
3. Chemical Vapor Deposition of Conducting Materials
Tobias Gerfin and Klaus-Hermann Dahmen
3.1 Introduction 152
3.2 Deposition Techniques 153
3.3 Nontransparent Conducting Films 155
3.3.1 Titanium Nitride 155
3.3.1.1 Introduction 155
3.3.1.2 Precursors 156
3.3.1.3 Properties 168
3.3.2 Other Nitrides 170
3.3.2.1 Film Deposition Using Halides 170
3.3.2.2 Film Deposition Using Metal-Organic Precursors 171
3.3.3 Conclusions 171
3.4 Transparent Conducting Films 172
3.4.1 Introduction 172
3.4.2 Indium Oxide Systems 172
3.4.2.1 Precursors and Preparation 172
3.4.2.2 Properties and Applications 174
3.4.3 Tin Oxide Systems 176
3.4.3.1 Preparation and Precursors 176
3.4.3.2 Properties and Applications 178
3.4.4 Zinc Oxide Systems 180
3.4.4.1 Precursors and Preparation 180
3.4.4.2 Properties and Applications 183
3.4.5 Conclusion 184
References 185
4. Semiconducting Materials
Gary S. Tompa
4.1 Introduction to Semiconductors and Formation Technology 194
4.2 The Growth Technology 197
4.2.1 Competing Technologies 197
4.2.1.1 Liquid Phase Epitaxy (LPE) 197
4.2.1.2 Implantation 198
4.2.1.3 Molecular Beam Epitaxy (MBE) 199
4.2.1.4 Vapor Phase Epitaxy (VPE) 202
4.2.1.5 Others 203
4.2.2 Organometallic Vapor Phase Epitaxy (OMVPE) 204
4.2.3 Organometallic Vapor Phase Epitaxy (OMVPE) System Technology . . . 208
4.2.3.1 Reactor History 211
4.2.3.2 Modeling 216
4.2.3.3 Control Systems 218
4.2.3.4 Safety 221
4.2.3.5 Assisted Techniques 222
Contents XIII
4.2.3.6 The Deposition Equipment Manufacturers 223
4.2.3.7 Cost of Ownership 224
4.2.3.8 Choice of Process 225
4.3 The Substrates 225
4.4 The Reactants 227
4.4.1 The Gases 228
4.4.2 The Metal-Organics 228
4.4.3 Organometallic Source Vessels 230
4.4.4 Reactant Efficiencies 233
4.5 The Materials 234
4.5.1 Group II-VI Materials 234
4.5.2 Group III-V Materials 235
4.5.3 Group III-V Nitrides 237
4.5.4 Group IV-IV Materials Silicon, Silicon germanium 239
4.5.5 Carbides (Including and Diamond) 240
4.5.6 Oxides 241
4.5.7 Organic Materials 242
4.5.8 Characterization 243
4.6 The Device Applications 243
4.6.1 Field Effect Transistors (FETs) 243
4.6.2 Heterojunction Bipolar Transistors (HBTs) 244
4.6.3 High Electron Mobility Transistors (Modulation Deped Field
Effect Transistors [(HEMTs (MODFETs)] 245
4.6.4 LEDs 246
4.6.5 Lasers 248
4.6.6 Photodiode Detectors 250
4.6.7 Solar Cells 251
4.6.8 High Temperature Devices 253
4.6.9 III-V Integrated circuits, Opto Electronic Integrated Circuits (OEICs) . 253
4.7 The Future Prospects 254
4.7.1 Selective Area Epitaxy 254
4.7.2 Atomic Layer Epitaxy (ALE) 254
4.7.3 Real-Time In-Situ Process Monitoring 256
4.7.4 Alternative Sources 256
4.7.5 Large Area Production Technology 257
4.7.6 Insights 257
4.8 Conclusion 257
References 258
5. CVD of Insulating Materials
Andrew R. Barron
5.1 Introduction 262
5.2 Applications for Electrically Insulating Materials 262
5.2.1 Device Isolation and Gate Insulation 263
XIV Contents
5.2.2 Passivation 265
5.2.3 Planarization 266
5.3 General Considerations 267
5.3.1 Deposition Methods 267
5.3.2 Deposition Variables 268
5.3.3 Precursor Considerations 269
5.4 Oxides 269
5.4.1 Silicon Oxides 270
5.4.1.1 Silica (SiO2) 270
5.4.1.2 Silicate Glasses 278
5.4.2 Aluminium Oxides 282
5.4.2.1 Alumina (A12O3) 283
5.4.2.2 Aluminum Silicates 288
5.4.3 Transition Metal Oxides 290
5.4.3.1 Tantalum and Niobium Oxide 290
5.4.3.2 Titanium, Zirconium and Hafnium Oxide 292
5.4.4 Superconducting Metal Oxide (SMO) Lattice-Matched Insulators .... 294
5.5 Nitrides 295
5.5.1 Silicon Nitride and Oxynitride 296
5.5.2 Aluminum Nitride 300
5.5.3 Transition Metal Nitrides 307
5.6 Sulfides 308
5.6.1 Gallium Sulfide 309
5.6.2 Indium Sulfide 311
5.7 Fluorides 312
5.8 Concluding Remarks 313
References 313
6. Structural Ceramic Coatings and Composites
W. Jack Lackey
6.1 Introduction 321
6.2 Fibers 322
6.2.1 Current Status 322
6.2.2 Reactor Designs 324
6.2.3 Stress in Coated Fibers 329
6.2.4 Processing 331
6.2.5 Economic Analysis 339
6.3 Interface Coatings 341
6.3.1 Types of Interface Coatings 342
6.3.2 Layered Oxide Structures as Interfaces 342
6.3.3 CVD of Oxides 344
6.3.3.1 Textured CVD Coatings 345
6.3.3.2 CVD of Alumina 347
6.3.3.3 Porous Interface Coatings 348
Contents XV
6.3.3.4 Coatings of j8 -Alumina 348
6.4 Composite Consolidation 349
6.4.1 Chemical Vapor Infiltration of Carbon 350
6.4.2 Chemical Vapor Infiltration of Silicon Carbide 360
6.4.3 Chemical Vapor Infiltration of Alumina 361
6.4.4 Chemical Vapor Infiltration of Zirconium Oxide2 361
References 361
7. Other Materials
Gertrud E. Krauter and William S. Rees, Jr.
11 Halides 369
7.1.1 Fluorides 369
7.1.1.1 Group 1 Fluorides 369
7.1.1.2 Group 2 Fluorides 369
7.1.1.3 Transition Element Fluorides 370
7.1.2 Metal Iodides 370
7.2 Metal Oxides 370
7.2.1 Transition Element Oxides 372
7.2.1.1 Titanium, Zirconium and Hafnium Oxides 372
7.2.1.2 Vanadium, Niobium and Tantalum Oxides 373
7.2.1.3 Chromium, Molybdenum and Tungsten Oxides 373
7.2.1.4 Iron and Ruthenium Oxides 374
7.2.1.5 Cobalt Oxide 375
7.2.1.6 Nickel Oxide 375
7.2.1.7 Zinc Oxide 375
7.2.2 Main Group Element Oxides 376
7.2.2.1 Antimony Oxide 376
7.2.2.2 Indium Oxide 376
7.2.2.3 Thallium Oxide 376
7.2.3 Rare Earth Element Oxides 377
7.3 Metal Sulfides 377
7.3.1 Transition Element Sulfides 377
7.3.1.1 Titanium Sulfide 377
7.3.1.2 Molybdenum and Tungsten Sulfides 378
7.3.2 Main Group Element Sulfides 378
7.3.2.1 Group 2 Element Sulfides 378
7.3.2.2 Group 14 Element Sulfides 378
7.3.2.3 Arsenic Sulfide 379
7.4 Metal Selenides and Tellurides 379
7.4.1 Indium Selenide 379
7.4.2 Germanium Selenide 380
7.4.3 Tin Selenide 380
7.4.4 Arsenic Selenide 380
7.4.5 Antimony and Bismuth Tellurides 380
XVI Contents
7.5 Metal Nitrides 381
7.5.1 Transition Element Nitrides 381
7.5.1.1 Titanium, Zirconium and Hafnium Nitrides 381
7.5.1.2 Vanadium, Niobium and Tantalum Nitrides 382
7.5.1.3 Tungsten Nitride 382
7.5.2 Main Group Element Nitrides 383
7.5.2.1 Magnesium Nitride 383
7.5.2.2 Carbon Nitride 383
7.5.2.3 Germanium Nitride 383
7.5.2.4 Phosphorus Nitride 383
7.6 Metal Carbides 383
7.6.1 Transition Element Carbides 384
7.6.1.1 Titanium, Zirconium and Hafnium Carbides 384
7.6.1.2 Vanadium, Niobium and Tantalum Carbides 384
7.6.1.3 Chromium, Molybdenum and Tungsten Carbides 385
7.6.2 Main Group Element Carbides 386
7.6.2.1 Boron Carbide 386
7.7 Elemental Boron and Metal Borides 386
7.7.1 Elemental Boron 386
7.7.2 Metal Borides 387
7.7.2.1 Titanium, Zirconium and Hafnium Borides 387
7.7.2.2 Niobium and Tantalum Borides 388
7.7.2.3 Molybdenum and Tungsten Borides 388
7.8 Complex Ceramic Materials 389
7.8.1 Metal Carbonitrides 389
7.8.1.1 Boron-Carbon-Nitrogen Compounds 389
7.8.1.2 Titanium and Zirconium Carbonitrides 389
7.8.1.3 Niobium Carbonitride 390
7.8.1.4 Molybdenum Carbonitride 390
7.8.2 Titanium Silicocarbide 390
7.8.3 Spinels . . 390
7.8.4 Garnets 391
7.8.5 Other Magnetic Metal Oxides 391
7.8.6 Other Compounds 391
References 392
Glossary 401
Index 415
|
any_adam_object | 1 |
building | Verbundindex |
bvnumber | BV010903808 |
callnumber-first | T - Technology |
callnumber-label | TS695 |
callnumber-raw | TS695.15 |
callnumber-search | TS695.15 |
callnumber-sort | TS 3695.15 |
callnumber-subject | TS - Manufactures |
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ctrlnum | (OCoLC)35791401 (DE-599)BVBBV010903808 |
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discipline | Physik Fertigungstechnik Werkstoffwissenschaften / Fertigungstechnik |
format | Book |
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id | DE-604.BV010903808 |
illustrated | Illustrated |
indexdate | 2024-07-09T18:00:53Z |
institution | BVB |
isbn | 3527292950 |
language | German |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007293075 |
oclc_num | 35791401 |
open_access_boolean | |
owner | DE-384 DE-91G DE-BY-TUM DE-355 DE-BY-UBR DE-703 DE-92 DE-29T DE-83 DE-634 DE-188 |
owner_facet | DE-384 DE-91G DE-BY-TUM DE-355 DE-BY-UBR DE-703 DE-92 DE-29T DE-83 DE-634 DE-188 |
physical | XVI, 424 S. Ill. |
publishDate | 1996 |
publishDateSearch | 1996 |
publishDateSort | 1996 |
publisher | VCH |
record_format | marc |
spelling | CVD of nonmetals ed. by William S. Rees, jr. Weinheim [u.a.] VCH 1996 XVI, 424 S. Ill. txt rdacontent n rdamedia nc rdacarrier Dépôt chimique en phase vapeur Dépôt chimique en phase vapeur ram Non-métaux Non-métaux ram Chemical vapor deposition Nonmetals Nichtmetallischer Werkstoff (DE-588)4171773-9 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 s Nichtmetallischer Werkstoff (DE-588)4171773-9 s DE-604 Rees, William S. Sonstige oth HBZ Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007293075&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | CVD of nonmetals Dépôt chimique en phase vapeur Dépôt chimique en phase vapeur ram Non-métaux Non-métaux ram Chemical vapor deposition Nonmetals Nichtmetallischer Werkstoff (DE-588)4171773-9 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
subject_GND | (DE-588)4171773-9 (DE-588)4009846-1 |
title | CVD of nonmetals |
title_auth | CVD of nonmetals |
title_exact_search | CVD of nonmetals |
title_full | CVD of nonmetals ed. by William S. Rees, jr. |
title_fullStr | CVD of nonmetals ed. by William S. Rees, jr. |
title_full_unstemmed | CVD of nonmetals ed. by William S. Rees, jr. |
title_short | CVD of nonmetals |
title_sort | cvd of nonmetals |
topic | Dépôt chimique en phase vapeur Dépôt chimique en phase vapeur ram Non-métaux Non-métaux ram Chemical vapor deposition Nonmetals Nichtmetallischer Werkstoff (DE-588)4171773-9 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
topic_facet | Dépôt chimique en phase vapeur Non-métaux Chemical vapor deposition Nonmetals Nichtmetallischer Werkstoff CVD-Verfahren |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007293075&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT reeswilliams cvdofnonmetals |