Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1996
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| Schlagworte: | |
| Beschreibung: | 192 S. Ill., graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |c von Wolfgang Braun |
| 264 | 1 | |c 1996 | |
| 300 | |a 192 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 502 | |a Berlin, Univ., Diss., 1996 | ||
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Datensatz im Suchindex
| _version_ | 1804125364783415296 |
|---|---|
| any_adam_object | |
| author | Braun, Wolfgang |
| author_facet | Braun, Wolfgang |
| author_role | aut |
| author_sort | Braun, Wolfgang |
| author_variant | w b wb |
| building | Verbundindex |
| bvnumber | BV010875959 |
| classification_rvk | UQ 2200 |
| classification_tum | PHY 609d ELT 280d PHY 693d |
| ctrlnum | (OCoLC)258028247 (DE-599)BVBBV010875959 |
| discipline | Physik Elektrotechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010875959 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T18:00:23Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007271604 |
| oclc_num | 258028247 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-11 DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-11 DE-706 |
| physical | 192 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| record_format | marc |
| spelling | Braun, Wolfgang Verfasser aut Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun 1996 192 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berlin, Univ., Diss., 1996 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf RHEED (DE-588)4295703-5 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Halbleitergrenzfläche (DE-588)4158802-2 gnd rswk-swf Aluminiumarsenid (DE-588)4324566-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Aluminiumarsenid (DE-588)4324566-3 s Molekularstrahlepitaxie (DE-588)4170399-6 s Halbleitergrenzfläche (DE-588)4158802-2 s RHEED (DE-588)4295703-5 s DE-604 |
| spellingShingle | Braun, Wolfgang Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth Galliumarsenid (DE-588)4019155-2 gnd RHEED (DE-588)4295703-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Aluminiumarsenid (DE-588)4324566-3 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4295703-5 (DE-588)4170399-6 (DE-588)4158802-2 (DE-588)4324566-3 (DE-588)4113937-9 |
| title | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_auth | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_exact_search | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_full | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_fullStr | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_full_unstemmed | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth von Wolfgang Braun |
| title_short | Reflection high energy-electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| title_sort | reflection high energy electron diffraction studies of semiconductor interfaces during molecular beam epitaxy growth |
| topic | Galliumarsenid (DE-588)4019155-2 gnd RHEED (DE-588)4295703-5 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Halbleitergrenzfläche (DE-588)4158802-2 gnd Aluminiumarsenid (DE-588)4324566-3 gnd |
| topic_facet | Galliumarsenid RHEED Molekularstrahlepitaxie Halbleitergrenzfläche Aluminiumarsenid Hochschulschrift |
| work_keys_str_mv | AT braunwolfgang reflectionhighenergyelectrondiffractionstudiesofsemiconductorinterfacesduringmolecularbeamepitaxygrowth |