TCAD based development of a flash EPROM technology:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Konstanz
Hartung-Gorre
1996
|
| Ausgabe: | 1. Aufl. |
| Schriftenreihe: | Series in microelectronics
55 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | WST: TCAD-based development of a flash-EPROM technology. - Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 1996. - Zsfassung in dt. Sprache |
| Beschreibung: | IX, 123 S. graph. Darst. |
| ISBN: | 3896490354 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV010840153 | ||
| 003 | DE-604 | ||
| 005 | 19961206 | ||
| 007 | t | ||
| 008 | 960701s1996 gw d||| m||| 00||| ger d | ||
| 016 | 7 | |a 947908242 |2 DE-101 | |
| 020 | |a 3896490354 |c brosch. : DM 88.00, sfr 88.00, S 660.00 |9 3-89649-035-4 | ||
| 035 | |a (OCoLC)36640355 | ||
| 035 | |a (DE-599)BVBBV010840153 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-29T | ||
| 050 | 0 | |a TK7895.M4 | |
| 100 | 1 | |a Gappisch, Steffen |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a TCAD based development of a flash EPROM technology |c Steffen Gappisch |
| 246 | 1 | 3 | |a TCAD-based development of a flash-EPROM technology |
| 250 | |a 1. Aufl. | ||
| 264 | 1 | |a Konstanz |b Hartung-Gorre |c 1996 | |
| 300 | |a IX, 123 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Series in microelectronics |v 55 | |
| 500 | |a WST: TCAD-based development of a flash-EPROM technology. - Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 1996. - Zsfassung in dt. Sprache | ||
| 650 | 4 | |a Flash memories (Computers) |x Computer-aided design | |
| 650 | 4 | |a Metal oxide semiconductors, Complementary |x Computer-aided design | |
| 650 | 0 | 7 | |a Flash-Speicher |0 (DE-588)4518714-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CMOS |0 (DE-588)4010319-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CMOS-Speicher |0 (DE-588)4278777-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a EPROM |0 (DE-588)4134129-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Flash-Speicher |0 (DE-588)4518714-9 |D s |
| 689 | 0 | 1 | |a CMOS |0 (DE-588)4010319-5 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a EPROM |0 (DE-588)4134129-6 |D s |
| 689 | 1 | 1 | |a CMOS-Speicher |0 (DE-588)4278777-4 |D s |
| 689 | 1 | |8 1\p |5 DE-604 | |
| 830 | 0 | |a Series in microelectronics |v 55 |w (DE-604)BV002454417 |9 55 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007246446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
Datensatz im Suchindex
| _version_ | 1805067573573713920 |
|---|---|
| adam_text |
CONTENTS
ACKNOWLEDGEMENTS
I
ABSTRACT
VII
ZUSAMMENFASSUNG
IX
1
INTRODUCTION
1
1.1
MOTIVATION
.
1
1.2
STATE-OF-THE-ART
FLASH
TECHNOLOGY
.
2
1.3
GOAL
OF
THIS
WORK
.
3
1.4
WORKING
ENVIRONMENT
.
3
1.5
STRUCTURE
OF
THIS
THESIS
.
4
2
FLASH
MEMORY
PHYSICS
7
2.1
FLASH
OPERATION
PRINCIPLE
.
7
2.2
STORAGE
PRINCIPLE
OF
NONVOLATILE
MEMORIES
.
9
2.3
PROGRAMMING/ERASLNG
MECHANISM
FOR
FLASH
EPROM
CELLS
.
10
2.3.1
PROGRAMMING
WITH
HOT
ELECTRON
INJECTION
.
10
2.3.2
MODELING
OF
HOT
ELECTRON
INJECTION
.
13
2.3.3
ERASING
WITH
FOWLER-NORDHEIM
TUNNELING
.
14
2.3.4
MODELING
OF
FOWLER-NORDHEIM
TUNNELING
.
15
3
FLASH
EVALUATION
19
3.1
HOW
TO
DESIGN
AN
OPTIMAL
FLASH
CELL
.
19
3.2
FLASH
FEASIBILITY
IN
STANDARD
CMOS
.
22
3.3
FLASH
REALIZATION
IN
STANDARD
CMOS
.
24
3.3.1
SYMMETRICAL
FLASH
CELL
WITH
BORON
CHANNEL
IMPLANT
.
24
3.3.2
SYMMETRICAL
FLASH
CELL
WITH
N-BURIED
CHANNEL
24
3.3.3
ASYMMETRICAL
FLASH
CELL
.
25
4
FLASH
TECHNOLOGY
31
4.1
PROCESS
FLOW
.
31
4.2
GATE
LEAKAGE
.
36
5
SIMULATION
AND
OPTIMIZATION
41
5.1
OPTIMIZATION
OF
SYMMETRICAL
FLASH
CELLS
.
42
5.1.1
OPTIMIZATION
FLASH
DRAIN
IMPLANT
.
44
5.1.2
OPTIMIZATION
OF
BORON
CHANNEL
IMPLANT
.
48
5.1.3
OPTIMIZATION
OF
N-BURIED
CHANNEL
IMPLANT
54
5.2
SIMULATION
OF
ASYMMETRICAL
FLASH
CELLS
.
60
6
RESULTS
SYMMETRICAL
CELLS
65
6.1
INJECTION
AND
DRAIN
CURRENT
.
66
6.2
BREAKDOWN
VOLTAGE
.
72
6.3
PROGRAMMING
PERFORMANCE
.
75
6.4
ERASING
PERFORMANCE
.
77
6.5
CYCLING
ENDURANCE
.
79
6.6
DISTURB
CHARACTERISTICS
.
80
6.7
COUPLING
FACTORS
AND
PROGRAMMING
PERFORMANCE
.
85
7
RESULTS
ASYMMETRICAL
CELLS
95
7.1
INJECTION
AND
DRAIN
CURRENT
.
95
7.2
PROGRAMMING
PERFORMANCE
.
98
7.3
ERASING
PERFORMANCE
.
99
8
DESIGN
OF
FLASH-EPROM
CELLS
101
8.1
LAYOUT
RULES
.
101
8.2
NOR-MEMORY
MATRIX
.
103
9 PERIPHERAL
FLASH
CIRCUITS
107
9.1
FLASH
MEMORY
DESIGN
.
107
9.2
CHARGE
PUMPS
.
108
9.3
HIGH-VOLTAGE
SWITCHES
.
112
10
CONCLUSIONS
117
A
LIST
OF
SYMBOLS
119
CURRICULUM
VITAE
123 |
| any_adam_object | 1 |
| author | Gappisch, Steffen |
| author_facet | Gappisch, Steffen |
| author_role | aut |
| author_sort | Gappisch, Steffen |
| author_variant | s g sg |
| building | Verbundindex |
| bvnumber | BV010840153 |
| callnumber-first | T - Technology |
| callnumber-label | TK7895 |
| callnumber-raw | TK7895.M4 |
| callnumber-search | TK7895.M4 |
| callnumber-sort | TK 47895 M4 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| ctrlnum | (OCoLC)36640355 (DE-599)BVBBV010840153 |
| edition | 1. Aufl. |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV010840153</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19961206</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">960701s1996 gw d||| m||| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">947908242</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3896490354</subfield><subfield code="c">brosch. : DM 88.00, sfr 88.00, S 660.00</subfield><subfield code="9">3-89649-035-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)36640355</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010840153</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7895.M4</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Gappisch, Steffen</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">TCAD based development of a flash EPROM technology</subfield><subfield code="c">Steffen Gappisch</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">TCAD-based development of a flash-EPROM technology</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">1. Aufl.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Konstanz</subfield><subfield code="b">Hartung-Gorre</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">IX, 123 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Series in microelectronics</subfield><subfield code="v">55</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">WST: TCAD-based development of a flash-EPROM technology. - Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 1996. - Zsfassung in dt. Sprache</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Flash memories (Computers)</subfield><subfield code="x">Computer-aided design</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors, Complementary</subfield><subfield code="x">Computer-aided design</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Flash-Speicher</subfield><subfield code="0">(DE-588)4518714-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CMOS-Speicher</subfield><subfield code="0">(DE-588)4278777-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">EPROM</subfield><subfield code="0">(DE-588)4134129-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Flash-Speicher</subfield><subfield code="0">(DE-588)4518714-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">CMOS</subfield><subfield code="0">(DE-588)4010319-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">EPROM</subfield><subfield code="0">(DE-588)4134129-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">CMOS-Speicher</subfield><subfield code="0">(DE-588)4278777-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Series in microelectronics</subfield><subfield code="v">55</subfield><subfield code="w">(DE-604)BV002454417</subfield><subfield code="9">55</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007246446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010840153 |
| illustrated | Illustrated |
| indexdate | 2024-07-20T03:36:23Z |
| institution | BVB |
| isbn | 3896490354 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007246446 |
| oclc_num | 36640355 |
| open_access_boolean | |
| owner | DE-29T |
| owner_facet | DE-29T |
| physical | IX, 123 S. graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Hartung-Gorre |
| record_format | marc |
| series | Series in microelectronics |
| series2 | Series in microelectronics |
| spelling | Gappisch, Steffen Verfasser aut TCAD based development of a flash EPROM technology Steffen Gappisch TCAD-based development of a flash-EPROM technology 1. Aufl. Konstanz Hartung-Gorre 1996 IX, 123 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Series in microelectronics 55 WST: TCAD-based development of a flash-EPROM technology. - Zugl.: Zürich, Eidgenössische Techn. Hochsch., Diss., 1996. - Zsfassung in dt. Sprache Flash memories (Computers) Computer-aided design Metal oxide semiconductors, Complementary Computer-aided design Flash-Speicher (DE-588)4518714-9 gnd rswk-swf CMOS (DE-588)4010319-5 gnd rswk-swf CMOS-Speicher (DE-588)4278777-4 gnd rswk-swf EPROM (DE-588)4134129-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Flash-Speicher (DE-588)4518714-9 s CMOS (DE-588)4010319-5 s DE-604 EPROM (DE-588)4134129-6 s CMOS-Speicher (DE-588)4278777-4 s 1\p DE-604 Series in microelectronics 55 (DE-604)BV002454417 55 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007246446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Gappisch, Steffen TCAD based development of a flash EPROM technology Series in microelectronics Flash memories (Computers) Computer-aided design Metal oxide semiconductors, Complementary Computer-aided design Flash-Speicher (DE-588)4518714-9 gnd CMOS (DE-588)4010319-5 gnd CMOS-Speicher (DE-588)4278777-4 gnd EPROM (DE-588)4134129-6 gnd |
| subject_GND | (DE-588)4518714-9 (DE-588)4010319-5 (DE-588)4278777-4 (DE-588)4134129-6 (DE-588)4113937-9 |
| title | TCAD based development of a flash EPROM technology |
| title_alt | TCAD-based development of a flash-EPROM technology |
| title_auth | TCAD based development of a flash EPROM technology |
| title_exact_search | TCAD based development of a flash EPROM technology |
| title_full | TCAD based development of a flash EPROM technology Steffen Gappisch |
| title_fullStr | TCAD based development of a flash EPROM technology Steffen Gappisch |
| title_full_unstemmed | TCAD based development of a flash EPROM technology Steffen Gappisch |
| title_short | TCAD based development of a flash EPROM technology |
| title_sort | tcad based development of a flash eprom technology |
| topic | Flash memories (Computers) Computer-aided design Metal oxide semiconductors, Complementary Computer-aided design Flash-Speicher (DE-588)4518714-9 gnd CMOS (DE-588)4010319-5 gnd CMOS-Speicher (DE-588)4278777-4 gnd EPROM (DE-588)4134129-6 gnd |
| topic_facet | Flash memories (Computers) Computer-aided design Metal oxide semiconductors, Complementary Computer-aided design Flash-Speicher CMOS CMOS-Speicher EPROM Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007246446&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002454417 |
| work_keys_str_mv | AT gappischsteffen tcadbaseddevelopmentofaflashepromtechnology |