Silicon carbide and related materials 1995: proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995
Gespeichert in:
Weitere Verfasser: | |
---|---|
Format: | Tagungsbericht Buch |
Sprache: | English |
Veröffentlicht: |
Bristol u.a.
Inst. of Physics Publ.
1996
|
Schriftenreihe: | Institute of Physics <London>: Institute of Physics conference series
142 |
Schlagworte: | |
Beschreibung: | XXV, 1120 S. Ill., graph. Darst. |
ISBN: | 0750303352 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV010833014 | ||
003 | DE-604 | ||
005 | 20230201 | ||
007 | t | ||
008 | 960704s1996 ad|| |||| 10||| eng d | ||
020 | |a 0750303352 |9 0-7503-0335-2 | ||
035 | |a (OCoLC)34576702 | ||
035 | |a (DE-599)BVBBV010833014 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
049 | |a DE-355 |a DE-384 |a DE-703 |a DE-83 | ||
050 | 0 | |a TK7871.15.S56 | |
082 | 0 | |a 621.3815/2 |2 20 | |
084 | |a UQ 8500 |0 (DE-625)146599: |2 rvk | ||
245 | 1 | 0 | |a Silicon carbide and related materials 1995 |b proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 |c ed. by S Nakashima ... |
264 | 1 | |a Bristol u.a. |b Inst. of Physics Publ. |c 1996 | |
300 | |a XXV, 1120 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Institute of Physics <London>: Institute of Physics conference series |v 142 | |
650 | 7 | |a Carbure de silicium - Congrès |2 ram | |
650 | 7 | |a Couches minces semiconductrices - Congrès |2 ram | |
650 | 7 | |a Cristaux - croissance - Congrès |2 ram | |
650 | 4 | |a Crystal growth |v Congresses | |
650 | 4 | |a Nitrides |v Congresses | |
650 | 4 | |a Semiconductor films |v Congresses | |
650 | 4 | |a Silicon carbide |v Congresses | |
650 | 4 | |a Wide gap semiconductors |v Congresses | |
650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Nichtoxidkeramik |0 (DE-588)4297838-5 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1995 |z Kioto |2 gnd-content | |
689 | 0 | 0 | |a Nichtoxidkeramik |0 (DE-588)4297838-5 |D s |
689 | 0 | |5 DE-604 | |
689 | 1 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
689 | 1 | |5 DE-604 | |
700 | 1 | |a Nakashima, Shin'ichi |0 (DE-588)1158302150 |4 edt | |
711 | 2 | |a International Conference on Silicon Carbide and Related Materials |n 6 |d 1995 |c Kyōto |j Sonstige |0 (DE-588)1601340-2 |4 oth | |
830 | 0 | |a Institute of Physics <London>: Institute of Physics conference series |v 142 |w (DE-604)BV002806317 |9 142 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-007240395 |
Datensatz im Suchindex
_version_ | 1804125319289896960 |
---|---|
any_adam_object | |
author2 | Nakashima, Shin'ichi |
author2_role | edt |
author2_variant | s n sn |
author_GND | (DE-588)1158302150 |
author_facet | Nakashima, Shin'ichi |
building | Verbundindex |
bvnumber | BV010833014 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.15.S56 |
callnumber-search | TK7871.15.S56 |
callnumber-sort | TK 47871.15 S56 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | UQ 8500 |
ctrlnum | (OCoLC)34576702 (DE-599)BVBBV010833014 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Conference Proceeding Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02075nam a2200505 cb4500</leader><controlfield tag="001">BV010833014</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20230201 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">960704s1996 ad|| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0750303352</subfield><subfield code="9">0-7503-0335-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)34576702</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010833014</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield><subfield code="a">DE-384</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.15.S56</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815/2</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 8500</subfield><subfield code="0">(DE-625)146599:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Silicon carbide and related materials 1995</subfield><subfield code="b">proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995</subfield><subfield code="c">ed. by S Nakashima ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Bristol u.a.</subfield><subfield code="b">Inst. of Physics Publ.</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXV, 1120 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Institute of Physics <London>: Institute of Physics conference series</subfield><subfield code="v">142</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Carbure de silicium - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Couches minces semiconductrices - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Cristaux - croissance - Congrès</subfield><subfield code="2">ram</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Crystal growth</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Nitrides</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductor films</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Wide gap semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Nichtoxidkeramik</subfield><subfield code="0">(DE-588)4297838-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1995</subfield><subfield code="z">Kioto</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Nichtoxidkeramik</subfield><subfield code="0">(DE-588)4297838-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nakashima, Shin'ichi</subfield><subfield code="0">(DE-588)1158302150</subfield><subfield code="4">edt</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference on Silicon Carbide and Related Materials</subfield><subfield code="n">6</subfield><subfield code="d">1995</subfield><subfield code="c">Kyōto</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)1601340-2</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Institute of Physics <London>: Institute of Physics conference series</subfield><subfield code="v">142</subfield><subfield code="w">(DE-604)BV002806317</subfield><subfield code="9">142</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007240395</subfield></datafield></record></collection> |
genre | (DE-588)1071861417 Konferenzschrift 1995 Kioto gnd-content |
genre_facet | Konferenzschrift 1995 Kioto |
id | DE-604.BV010833014 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:59:40Z |
institution | BVB |
institution_GND | (DE-588)1601340-2 |
isbn | 0750303352 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007240395 |
oclc_num | 34576702 |
open_access_boolean | |
owner | DE-355 DE-BY-UBR DE-384 DE-703 DE-83 |
owner_facet | DE-355 DE-BY-UBR DE-384 DE-703 DE-83 |
physical | XXV, 1120 S. Ill., graph. Darst. |
publishDate | 1996 |
publishDateSearch | 1996 |
publishDateSort | 1996 |
publisher | Inst. of Physics Publ. |
record_format | marc |
series | Institute of Physics <London>: Institute of Physics conference series |
series2 | Institute of Physics <London>: Institute of Physics conference series |
spelling | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 ed. by S Nakashima ... Bristol u.a. Inst. of Physics Publ. 1996 XXV, 1120 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Institute of Physics <London>: Institute of Physics conference series 142 Carbure de silicium - Congrès ram Couches minces semiconductrices - Congrès ram Cristaux - croissance - Congrès ram Crystal growth Congresses Nitrides Congresses Semiconductor films Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf Nichtoxidkeramik (DE-588)4297838-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1995 Kioto gnd-content Nichtoxidkeramik (DE-588)4297838-5 s DE-604 Siliciumcarbid (DE-588)4055009-6 s Nakashima, Shin'ichi (DE-588)1158302150 edt International Conference on Silicon Carbide and Related Materials 6 1995 Kyōto Sonstige (DE-588)1601340-2 oth Institute of Physics <London>: Institute of Physics conference series 142 (DE-604)BV002806317 142 |
spellingShingle | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 Institute of Physics <London>: Institute of Physics conference series Carbure de silicium - Congrès ram Couches minces semiconductrices - Congrès ram Cristaux - croissance - Congrès ram Crystal growth Congresses Nitrides Congresses Semiconductor films Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Siliciumcarbid (DE-588)4055009-6 gnd Nichtoxidkeramik (DE-588)4297838-5 gnd |
subject_GND | (DE-588)4055009-6 (DE-588)4297838-5 (DE-588)1071861417 |
title | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 |
title_auth | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 |
title_exact_search | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 |
title_full | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 ed. by S Nakashima ... |
title_fullStr | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 ed. by S Nakashima ... |
title_full_unstemmed | Silicon carbide and related materials 1995 proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 ed. by S Nakashima ... |
title_short | Silicon carbide and related materials 1995 |
title_sort | silicon carbide and related materials 1995 proceedings of the sixth international conference kyoto japan 18 21 september 1995 |
title_sub | proceedings of the Sixth International Conference ; Kyoto, Japan, 18 - 21 September 1995 |
topic | Carbure de silicium - Congrès ram Couches minces semiconductrices - Congrès ram Cristaux - croissance - Congrès ram Crystal growth Congresses Nitrides Congresses Semiconductor films Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Siliciumcarbid (DE-588)4055009-6 gnd Nichtoxidkeramik (DE-588)4297838-5 gnd |
topic_facet | Carbure de silicium - Congrès Couches minces semiconductrices - Congrès Cristaux - croissance - Congrès Crystal growth Congresses Nitrides Congresses Semiconductor films Congresses Silicon carbide Congresses Wide gap semiconductors Congresses Siliciumcarbid Nichtoxidkeramik Konferenzschrift 1995 Kioto |
volume_link | (DE-604)BV002806317 |
work_keys_str_mv | AT nakashimashinichi siliconcarbideandrelatedmaterials1995proceedingsofthesixthinternationalconferencekyotojapan1821september1995 AT internationalconferenceonsiliconcarbideandrelatedmaterialskyoto siliconcarbideandrelatedmaterials1995proceedingsofthesixthinternationalconferencekyotojapan1821september1995 |