Introduction to semiconductor integrated optics:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Boston, Mass. [u.a.]
Artech House
1995
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| Schriftenreihe: | Artech House optoelectronics library
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XX, 371 S. graph. Darst. |
| ISBN: | 0890067899 |
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| 245 | 1 | 0 | |a Introduction to semiconductor integrated optics |c Hans P. Zappe |
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| adam_text | INTRODUCTION TO SEMICONDUCTOR INTEGRATED OPTICS HANS P. ZAPPE ARTECH
HOUSE BOSTON * LONDON CONTENTS ACKNOWLEDGMENTS XV REFACE XVII
ITRODUCTION XIX CHAPTER 1 BASIC ELECTROMAGNETICS 1 1.1 GENERAL
RELATIONSHIPS 1 1.1.1 MAXWELL S EQUATIONS 1 1.1.2 CURRENT CONTINUITY 2
1.1.3 THE WAVE EQUATION 3 1.1.4 *** WAVES AND POLARIZATION 4 1.2 SOLVING
THE WAVE EQUATION 4 1.2.1 PROPAGATION CONSTANT 6 1.2.2 MAXWELL FOR
SINUSOIDAL FIELDS 7 1.3 ENERGY 8 1.3.1 POYNTING VECTOR 9 1.4
INTERFERENCE 10 CHAPTER 2 A SUMMARY OF SEMICONDUCTORS 13 2.1 SILICON AND
GALLIUM ARSENIDE 13 2.1.1 CRYSTALLINE PROPERTIES 14 2.1.2 MILLER INDICES
AND ATOMIC PLANES 16 2.2 ENERGY BANDS 17 2.2.1 BAND STRUCTURE
CALCULATIONS 18 2.2.2 ENERGY BANDS 19 2.2.3 ELECTRON TRANSITIONS BETWEEN
BANDS 20 2.2.4 EFFECTIVE MASS 21 2.3 CARRIER CONCENTRATION 24 2.3.1
DENSITY OF STATES 24 2.3.2 FERMI-DIRAC DISTRIBUTION 25 VIA INTRODUCTION
TO SEMICONDUCTOR INTEGRATED OPTICS 2.3.3 INTRINSIC CARRIER CONCENTRATION
2.4 DOPING 2.4.1 DONORS AND ACCEPTORS 2.4.2 FERMI LEVEL DETERMINATION
2.4.3 DEGENERATE SEMICONDUCTORS 2.5 TRANSPORT 2.5.1 DRIFT AND DIFFUSION
2.5.2 CONTRIBUTIONS TO MOBILITY 2.5.3 HIGH FIELD EFFECTS 2.6 THE PN
JUNCTION 2.6.1 THE DEPLETION APPROXIMATION 2.6.2 DEBYE LENGTH 2.6.3 THE
PN JUNCTION UNDER BIAS 2.6.4 REVERSE BIAS BREAKDOWN 2.6.5 JUNCTION
CAPACITANCE 2.6.6 THE P-I-N DIODE 2.7 HETEROJUNCTIONS AND QUANTUM WELLS
2.7.1 SINGLE AND DOUBLE HETEROSTRUCTURES 2.7.2 QUANTUM WELLS CHAPTER 3
OPTICAL PROPERTIES OF SEMICONDUCTORS 3.1 REFRACTIVE INDEX 3.2 ABSORPTION
3.2.1 DIRECT BANDGAP 3.2.2 INDIRECT BANDGAP 3.2.3 BAND TAILS 3.2.4 FREE
CARRIER ABSORPTION 3.2.5 FRANZ-KELDYSH EFFECT 3.3 RECOMBINATION 3.3.1
RADIATIVE TRANSITIONS 3.3.2 DIRECT AND INDIRECT TRANSITIONS 3.3.3
NONRADIATIVE RECOMBINATION 3.4 POLARIZATION 3.4.1 SUSCEPTIBILITY 3.4.2
POLARIZATION MODEL 3.5 COMPLEX MATERIAL CONSTANTS 3.5.1 COMPLEX
DIELECTRIC CONSTANT 3.5.2 COMPLEX REFRACTIVE INDEX 3.5.3 COMPLEX
PROPAGATION CONSTANT 3.5.4 SUMMARY OF COMPLEXITIES 3.6 DIELECTRIC TENSOR
3.7 KRAMERS-KRONIG RELATIONS CONTENTS IX IHAPTER 4 OPTICAL SEMICONDUCTOR
MATERIALS 77 4.1 III-V MATERIALS 77 4.1.1 THE III-V EXTENDED FAMILY 77
4.1.2 REGIMES OF APPLICATION 79 4.2 COMPOSITION AND OPTICAL PROPERTIES
81 4.2.1 REFRACTIVE INDEX 81 4.2.2 ENERGY GAP 83 4.3 BULK CRYSTAL GROWTH
84 4.3.1 LIQUID-ENCAPSULATED CZOCHRALSKI 86 4.3.2 HORIZONTAL BRIDGMAN
AND VERTICAL GRADIENT FREEZE 87 4.3.3 WAFER SAWING AND FLAT GRINDING *
88 4.4 EPITAXIAL LAYER GROWTH 89 4.4.1 LIQUID PHASE EPITAXY 90 4.4.2
MOLECULAR BEAM EPITAXY 90 4.4.3 METALORGANIC CHEMICAL VAPOR DEPOSITION
92 4.5 MORE OPTICAL MATERIALS 94 4.5.1 SILICON 94 4.5.2 SILICON:
MODIFICATIONS AND ACCESSORIES 95 4.5.3 SILICON/GERMANIUM 96 4.5.4 OTHER
COMPOUND SEMICONDUCTORS 96 99 100 100 102 103 103 104 104 107 107 109
109 110 114 114 115 117 117 118 119 120 LAPTER 5 BASICS OF SEMICONDUCTOR
PROCESSING 5.1 5.2 5.3 5.4 5.5 5.6 A TYPICAL OPTOELECTRONIC PROCESS
5.1.1 THE BASICS 5.1.2 THE EMBELLISHMENTS 5.1.3 THE ENVIRONMENT
PHOTOLITHOGRAPHY 5.2.1 MASKS 5.2.2 PHOTORESIST 5.2.3 LIFT-OFF AND IMAGE
REVERSAL 5.2.4 MASK ALIGNERS 5.2.5 NONOPTICAL LITHOGRAPHY ETCHING 5.3.1
DRY ETCHING BASICS AND MACHINERY 5.3.2 ETCH GASSES 5.3.3 PROBLEMS AND
LIMITATIONS 5.3.4 WET ETCHING DIELECTRICS 5.4.1 PLASMA DEPOSITION 5.4.2
CHEMICAL VAPOR DEPOSITION METALS PROCESSING VARIA X INTRODUCTION TO
SEMICONDUCTOR INTEGRATED OPTICS 5.6.1 III-V POST-PROCESSING 5.6.2 ION
IMPLANTATION 5.6.3 RAPID THERMAL ANNEALING CHAPTER 6 REFLECTIONS AT
BOUNDARIES 6.1 ANGLES OF REFLECTION AND REFRACTION 6.2 BOUNDARY
CONDITIONS OF ELECTROMAGNETIC FIELDS 6.3 REFLECTION AND TRANSMISSION
COEFFICIENTS 6.3.1 ** CONFIGURATION 6.3.2 TM CONFIGURATION 6.3.3 POWER
TRANSMISSION AND REFLECTION 6.4 TWO SPECIAL CASES 6.4.1 NORMAL INCIDENCE
6.4.2 TOTAL INTERNAL REFLECTION CHAPTER 7 GUIDED WAVES AND SLAB
WAVEGUIDES 7.1 PERFECT MIRROR WAVEGUIDES 7.1.1 DISCRETE WAVEGUIDE MODES
7.1.2 PROPAGATION CONSTANTS AND EFFECTIVE INDEX 7.2 DIELECTRIC
WAVEGUIDES: THE RAY OPTIC MODEL 7.2.1 TOTAL INTERNAL REFLECTION 7.2.2
SYMMETRIC WAVEGUIDES 7.2.3 MONOMODE CONDITIONS 7.2.4 PROPAGATION
CONSTANTS AND EFFECTIVE INDEX, AGAIN 7.2.5 ASYMMETRIC WAVEGUIDES 7.3
ELECTROMAGNETIC MODEL 7.3.1 EIGENVALUE EQUATION FOR A SLAB WAVEGUIDE
7.3.2 PROPAGATING AND DECAYING SOLUTIONS 7.3.3 PROPAGATION AND DECAY
CONSTANTS 7.4 DIELECTRIC WAVEGUIDES: ELECTRIC AND MAGNETIC FIELDS 7.4.1
FIELD SOLUTIONS 7.4.2 POWER NORMALIZATION 7.4.3 SYMMETRIC WAVEGUIDE:
CUTOFF CONDITION 7.4.4 ASYMMETRIC WAVEGUIDE: CUTOFF CONDITION 7.4.5
CONFINEMENT FACTOR 7.5 GOOS-HAENCHEN SHIFT CHAPTER 8 OPTICAL CHANNEL
WAVEGUIDES 8.1 TWO-DIMENSIONAL WAVEGUIDE STRUCTURES 8.1.1 ETCHED
STRUCTURES 8.1.2 OTHER III-V WAVEGUIDE TECHNIQUES 8.1.3 SILICON-BASED
WAVEGUIDES 8.2 TWO-DIMENSIONAL WAVEGUIDE ANALYSIS CONTENTS XI 8.2.1
EFFECTIVE INDEX APPROXIMATION 183 8.2.2 METHOD OF FIELD SHADOWS 186
8.2.3 WAVEGUIDE MODES 188 8.2.4 MONOMODE WAVEGUIDES 189 8.2.5 LATERAL
WAVEGUIDING MECHANISMS 191 8.3 INPUT/OUTPUT COUPLING 193 8.3.1 BUTT
COUPLING 193 8.3.2 END-FIRE COUPLING 194 8.3.3 GRATING COUPLING 195
8.3.4 PRISM COUPLERS 196 8.4 WAVEGUIDE LOSSES 197 8.4.1 BAND-EDGE
ABSORPTION 197 8.4.2 FREE-CARRIER ABSORPTION 198 8.4.3 SCATTERING 199
8.4.4 RADIATION LOSSES 200 8.4.5 TYPICAL LOSS VALUES 201 8.5 LOSS
CHARACTERIZATION 201 8.5.1 CUT-BACK TECHNIQUE 202 8.5.2 FABRY-PEROT
RESONANCES 202 8.6 PASSIVE WAVEGUIDE STRUCTURES 204 8.6.1 CURVES 204
8.6.2 COUPLERS 207 8.6.3 Y-JUNCTIONS 209 HAPTER 9 LASERS 215 9.1 LASER
OPERATION*A QUICK HEURISTIC DISCUSSION 216 9.2 PHOTON EMISSION IN
SEMICONDUCTORS 217 9.2.1 SPONTANEOUS AND STIMULATED EMISSION 217 9.2.2
ELECTRON DISTRIBUTION AND TRANSITION RATES 218 9.2.3 LINESHAPE FUNCTION
220 9.2.4 SPECTRAL SHAPE AND BROADENING 222 9.3 OPTICAL GAIN 223 9.3.1
AMPLIFICATION AND ATTENUATION 224 9.3.2 SEMICONDUCTOR GAIN 225 9.3.3
GAIN SATURATION 228 9.3.4 HOLE BURNING 231 9.4 LASER OSCILLATION 232
9.4.1 FABRY-PEROT ETALON 232 9.4.2 THE ETALON WITH OPTICAL GAIN 236
9.4.3 LASER RESONANCE 239 9.5 SEMICONDUCTOR LASER STRUCTURES 239 9.5.1
MATERIALS AND HETEROSTRUCTURES 239 XII INTRODUCTION TO SEMICONDUCTOR
INTEGRATED OPTICS 9.6 9.7 9.8 9.9 * 9.5.2 9.5.3 9.5.4 QUANTUM-WELL
LASERS TYPICAL LASER DESIGNS RELIABILITY AND LIFETIME ELECTRICAL AND
OPTICAL CHARACTERIZATION 9.6.1 9.6.2 9.6.3 9.6.4 9.6.5 LIGHT- DISTRIL
9.8.1 9.8.2 9.8.3 THRESHOLD CURRENT OUTPUT POWER AND EFFICIENCY SPECTRUM
SPATIAL INTENSITY DISTRIBUTION TEMPERATURE VARIATIONS EMITTING DIODES
UTED FEEDBACK LASERS DISTRIBUTED FEEDBACK DBR/DFB FABRICATION OPERATION
AND SPECIAL FEATURES SURFACE-EMITTING LASERS 9.9.1 9.9.2 9.9.3 MIRROR
DEFLECTORS SURFACE GRATING COUPLERS VCSELS CHAPTER 10 PHOTODETECTORS
10.1 GENERAL PRINCIPLES 10.1.1 PHOTON TO ELECTRON CONVERSION 10.1.2
EFFICIENCY 10.1.3 NOISE 10.2 SEMICONDUCTOR DETECTOR MATERIALS 10.3 THE
P-I-N PHOTODIODE 10.3.1 WAVEGUIDE DETECTOR 10.3.2 SURFACE DETECTOR 10.4
SCHOTTKY AND MSM DETECTORS 10.4.1 SCHOTTKY BARRIER 10.4.2 MSM DETECTOR
10.4.3 SURFACE ILLUMINATION 10.5 AVALANCHE PHOTODIODES 10.5.1 AVALANCHE
MULTIPLICATION 10.5.2 PHOTODETECTOR STRUCTURE CHAPTER 11 MODULATORS 11.1
PHASE AND INTENSITY MODULATION 11.2 MODULATOR STRUCTURES: A BRIEF SURVEY
11.2.1 ELECTRO-OPTIC EFFECTS 11.2.2 DIRECTIONAL COUPLERS 11.2.3 TOTAL
INTERNAL REFLECTION DEFLECTORS 11.2.4 BRAGG GRATINGS CONTENTS XIUE 11.2.5
SURFACE ACOUSTIC WAVE DEVICES 297 11.2.6 INTERFEROMETRIC MODULATORS 299
11.2.7 TRAVELING WAVE MODULATORS 299 11.2.8 MECHANICAL BEAM STEERING 299
11.3 ELECTRO-OPTICS 300 11.3.1 POCKETS EFFECT 300 11.3.2 KERR EFFECT 301
11.3.3 FRANZ-KELDYSH EFFECT 302 11.3.4 PLASMA EFFECTS 304 11.3.5 SILICON
ELECTRO-OPTICS 305 11.4 QUANTUM-WELL MODULATORS 306 11.4.1
QUANTUM-CONFINED STARK EFFECT 306 11.4.2 ELECTROREFRACTION IN QUANTUM
WELLS 308 11.4.3 CHIRP 310 11.4.4 QUANTUM-WELL MODULATOR STRUCTURES 311
11.5 INTERFEROMETRIC MODULATORS 312 11.5.1 OUTPUT CHARACTERISTICS 313
11.5.2 INTERFEROMETER MODULATOR PERFORMANCE 315 11.5.3 OTHER ORIGINS FOR
PHASE SHIFT 315 HAPTER 12 HYBRIDIZATION AND MONOLITHIC INTEGRATION 321
12.1 INTEGRATION VERSUS HYBRIDIZATION 322 12.1.1 EXAMPLES: PHOTONIC
INTEGRATION 323 12.1.2 EXAMPLES: ELECTRONICS INTEGRATION 326 12.1.3
EXAMPLES: HYBRIDIZATION 326 12.2 WAVEGUIDE-BASED INTEGRATION 328 12.2.1
EVANESCENT AND BUTT COUPLING 328 12.2.2 SELECTIVE GROWTH 331 12.2.3
QUANTUM-WELL INTERMIXING 332 12.2.4 ELECTRICAL ISOLATION 334 12.3
MONOLITHIC DEVICES AND SYSTEMS 334 12.3.1 ODIER INTEGRATABLE DEVICE
STRUCTURES 335 12.3.2 MONOLITHIC SYSTEM IMPLEMENTATIONS 338 12.4 HYBRID
OPTICAL SYSTEMS 338 12.4.1 ALIGNMENT 339 12.4.2 BONDING 340 12.4.3
HETEROEPITAXY 342 PPENDIX A LIST OF VARIABLES 349 PPENDIX * LIST OF
USEFUL PHYSICAL CONSTANTS 357 BOUT THE AUTHOR 359 IDEX 361
|
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| indexdate | 2024-07-09T17:59:35Z |
| institution | BVB |
| isbn | 0890067899 |
| language | English |
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| spelling | Zappe, Hans P. Verfasser aut Introduction to semiconductor integrated optics Hans P. Zappe Boston, Mass. [u.a.] Artech House 1995 XX, 371 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Artech House optoelectronics library Integrated optics Semiconductors Integrierte Optoelektronik (DE-588)4223876-6 gnd rswk-swf Integrierte Optik (DE-588)4027240-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Integrierte Optoelektronik (DE-588)4223876-6 s Halbleiter (DE-588)4022993-2 s DE-604 Integrierte Optik (DE-588)4027240-0 s GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007236723&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zappe, Hans P. Introduction to semiconductor integrated optics Integrated optics Semiconductors Integrierte Optoelektronik (DE-588)4223876-6 gnd Integrierte Optik (DE-588)4027240-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4223876-6 (DE-588)4027240-0 (DE-588)4022993-2 |
| title | Introduction to semiconductor integrated optics |
| title_auth | Introduction to semiconductor integrated optics |
| title_exact_search | Introduction to semiconductor integrated optics |
| title_full | Introduction to semiconductor integrated optics Hans P. Zappe |
| title_fullStr | Introduction to semiconductor integrated optics Hans P. Zappe |
| title_full_unstemmed | Introduction to semiconductor integrated optics Hans P. Zappe |
| title_short | Introduction to semiconductor integrated optics |
| title_sort | introduction to semiconductor integrated optics |
| topic | Integrated optics Semiconductors Integrierte Optoelektronik (DE-588)4223876-6 gnd Integrierte Optik (DE-588)4027240-0 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Integrated optics Semiconductors Integrierte Optoelektronik Integrierte Optik Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007236723&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT zappehansp introductiontosemiconductorintegratedoptics |