Mixed analog digital VLSI devices and technology: an introduction
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York [u.a.]
McGraw-Hill
1996
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Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | X, 284 S. |
ISBN: | 0070654026 |
Internformat
MARC
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100 | 1 | |a Tsividis, Yannis P. |e Verfasser |4 aut | |
245 | 1 | 0 | |a Mixed analog digital VLSI devices and technology |b an introduction |c Yannis Tsividis |
246 | 1 | 3 | |a Mixed analog-digital VLSI devices and technology |
264 | 1 | |a New York [u.a.] |b McGraw-Hill |c 1996 | |
300 | |a X, 284 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Design and construction | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Mathematical models | |
650 | 4 | |a Mixed signal circuits | |
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Datensatz im Suchindex
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adam_text | Contents
Preface Ix
Chapter 1 Introduction: Mixed Analog-Digital Chips 1
1 1 The Role and Place of Modern Mixed Analog-Digital Chips 1
1 2 Advantages of Mixing Analog and Digital Circuits on the Same Chip 4
1 3 Applications of MAD Chips 4
1 4 Obstacles in the Design of MAD Chips 6
1 5 The Aim and Contents of This Book 10
Chapter 2 The MOSFET: Introduction and Qualitative View 15
2 1 Introduction 15
2 2 MOS Transistor Structure 15
2 3 Assumptions about Terminal Voltages, Currents, and Temperature 18
24A Qualitative Description of MOSFET Operation 19
241 Effect of Vas: Level of Inversion 19
242 Effect of Vse: The Body Effect 23
243 Effect of VBS: Drain Current 24
25A Fluid Dynamical Analog 31
2 6 Complete Set of Characteristics 34
2 7 Form of Functional lD-Vas Dependence: Practical Limits for
Regions of Inversion 35
2 8 Factors Affecting the Extrapolated Threshold Voltage 41
2 9 Other Factors Affecting the Drain Current 43
Chapter 3 MOSFET DC Modeling 47
3 1 Introduction 47
3 2 DC Model for Weak and for Strong Inversion 48
321 The Current Equations 50
322 Model Parameters Influenced by the Body Effect 58
323 Origin and Validity of the Model 61
3 3 Drain versus Source 63
3 4 Symmetric Models 64
v
vi Contents
3 5 General Models and Moderate Inversion 66
3 6 Mobility Dependence on Gate and Substrate Bias 70
3 7 Temperature Effects 73
3 8 Small-Dimension Effects 74
3 9 Breakdown 79
3 10 The pMOS Transistor 80
3 11 Device Symbols 82
3 12 Model Accuracy, Parameter Extraction, and Computer Simulation 83
Chapter 4 MOSFET Small-Signal Modeling 99
4 1 Introduction 99
4 2 Small-Signal Conductance Parameters 99
4 3 Expressions for Small-Signal Conductance Parameters in
Weak and in Strong Inversion 103
431 Gate Transconductance 103
432 Body Transconductance 108
433 Drain-Source Conductance 107
434 Drain-Substrate Conductance 110
435 Examples 110
436 Small-Signal Parameters in the Presence of Second-Order
Effects ill
4 4 Capacitance Parameters 111
441 Extrinsic Capacitances 113
442 Intrinsic Capacitances In Weak and in Strong Inversion 116
4 5 Intrinsic Cutoff Frequency and Limits of Model Validity 120
4 6 The Transistor at Very High Frequencies 123
461 Extrinsic Parasitic Resistances 123
462 Intrinsic Nonquasi-static Effects 123
4 7 Noise 126
471 Introductory Remarks 126
472 MOS Transistor Noise 129
4 8 General Models and Moderate Inversion 134
4 9 Parameter Extraction for Accurate Small-Signal Modeling 138
4 10 Requirements for Good CAD Models 140
Chapter 5 Technology and Available Circuit Components 147
5 1 Introduction 147
5 2 The n-Well CMOS Process 148
521 Basic Fabrication Steps and MOS Transistor Structures 148
522 Capacitors 158
523 Resistors 163
524 Inductors 168
525 Bipolar Transistors 170
526 Interconnects 172
527 Electrical Parameters 174
528 Input Protection 176
529 Latch-up 176
5 3 BICMOS Processes 177
531 Adding High-Performance Bipolar Transistors to CMOS 177
532 Bipolar Transistor Models 180
Contents vli
5 4 Other Silicon Processes 191
5 5 Sensors 193
5 6 Trimming 194
5 7 Tolerance and Matching of Electrical Parameters 195
5 8 Chip Size and Yield 197
5 9 The Influence of Pads and Package 199
Chapter 6 Layout 205
6 1 Introduction 205
6 2 Relation of Fabricated Transistors to Layout 206
6 3 Transistor Geometry and Layout 208
6 4 Layout for Device Matching and Precision Parameter Ratios 220
641 Capacitor Layout 220
642 Resistor Layout 229
643 Transistor Layout 231
644A Collection of Rules for Good Matching 234
6 5 Layout for Interference Reduction 236
6 6 Integrated-Circuit Design 248
Appendix A Additional MOS Transistor Modeling Information 259
Appendix B A Set of Benchmark Tests for Evaluating
MOSFET Models for Analog Design 261
Appendix C A Sample Spice Input File 269
|
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author | Tsividis, Yannis P. |
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id | DE-604.BV010824461 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T17:59:31Z |
institution | BVB |
isbn | 0070654026 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007233853 |
oclc_num | 33334795 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | X, 284 S. |
publishDate | 1996 |
publishDateSearch | 1996 |
publishDateSort | 1996 |
publisher | McGraw-Hill |
record_format | marc |
spelling | Tsividis, Yannis P. Verfasser aut Mixed analog digital VLSI devices and technology an introduction Yannis Tsividis Mixed analog-digital VLSI devices and technology New York [u.a.] McGraw-Hill 1996 X, 284 S. txt rdacontent n rdamedia nc rdacarrier Mathematisches Modell Integrated circuits Very large scale integration Design and construction Integrated circuits Very large scale integration Mathematical models Mixed signal circuits Hybridschaltung (DE-588)4026281-9 gnd rswk-swf Hybridschaltung (DE-588)4026281-9 s DE-604 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007233853&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Tsividis, Yannis P. Mixed analog digital VLSI devices and technology an introduction Mathematisches Modell Integrated circuits Very large scale integration Design and construction Integrated circuits Very large scale integration Mathematical models Mixed signal circuits Hybridschaltung (DE-588)4026281-9 gnd |
subject_GND | (DE-588)4026281-9 |
title | Mixed analog digital VLSI devices and technology an introduction |
title_alt | Mixed analog-digital VLSI devices and technology |
title_auth | Mixed analog digital VLSI devices and technology an introduction |
title_exact_search | Mixed analog digital VLSI devices and technology an introduction |
title_full | Mixed analog digital VLSI devices and technology an introduction Yannis Tsividis |
title_fullStr | Mixed analog digital VLSI devices and technology an introduction Yannis Tsividis |
title_full_unstemmed | Mixed analog digital VLSI devices and technology an introduction Yannis Tsividis |
title_short | Mixed analog digital VLSI devices and technology |
title_sort | mixed analog digital vlsi devices and technology an introduction |
title_sub | an introduction |
topic | Mathematisches Modell Integrated circuits Very large scale integration Design and construction Integrated circuits Very large scale integration Mathematical models Mixed signal circuits Hybridschaltung (DE-588)4026281-9 gnd |
topic_facet | Mathematisches Modell Integrated circuits Very large scale integration Design and construction Integrated circuits Very large scale integration Mathematical models Mixed signal circuits Hybridschaltung |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007233853&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
work_keys_str_mv | AT tsividisyannisp mixedanalogdigitalvlsidevicesandtechnologyanintroduction AT tsividisyannisp mixedanalogdigitalvlsidevicesandtechnology |