Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | English |
| Published: |
1996
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| Subjects: | |
| Physical Description: | II, 135 S. Ill., graph. Darst. |
Staff View
MARC
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| 100 | 1 | |a Jiang, Weidong |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |c von Weidong Jiang |
| 246 | 1 | 3 | |a Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| 264 | 1 | |c 1996 | |
| 300 | |a II, 135 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Univ. d. Bundeswehr, Diss., 1996 | ||
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Record in the Search Index
| _version_ | 1804125294645215233 |
|---|---|
| any_adam_object | |
| author | Jiang, Weidong |
| author_facet | Jiang, Weidong |
| author_role | aut |
| author_sort | Jiang, Weidong |
| author_variant | w j wj |
| building | Verbundindex |
| bvnumber | BV010809883 |
| classification_tum | ELT 285d |
| ctrlnum | (OCoLC)633132858 (DE-599)BVBBV010809883 |
| discipline | Elektrotechnik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV010809883 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:59:17Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007222063 |
| oclc_num | 633132858 |
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| owner_facet | DE-91 DE-BY-TUM DE-12 DE-703 DE-11 DE-355 DE-BY-UBR DE-706 |
| physical | II, 135 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| record_format | marc |
| spelling | Jiang, Weidong Verfasser aut Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere 1996 II, 135 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Univ. d. Bundeswehr, Diss., 1996 Wafer (DE-588)4294605-0 gnd rswk-swf Luft (DE-588)4130887-6 gnd rswk-swf Ätzen (DE-588)4000648-7 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Trockenätzen (DE-588)4222074-9 gnd rswk-swf Laser (DE-588)4034610-9 gnd rswk-swf Chlor (DE-588)4147748-0 gnd rswk-swf Excimerlaser (DE-588)4153300-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Laser (DE-588)4034610-9 s Ätzen (DE-588)4000648-7 s Chlor (DE-588)4147748-0 s Luft (DE-588)4130887-6 s DE-604 Wafer (DE-588)4294605-0 s Molekularstrahlepitaxie (DE-588)4170399-6 s Trockenätzen (DE-588)4222074-9 s Excimerlaser (DE-588)4153300-8 s |
| spellingShingle | Jiang, Weidong Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere Wafer (DE-588)4294605-0 gnd Luft (DE-588)4130887-6 gnd Ätzen (DE-588)4000648-7 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Trockenätzen (DE-588)4222074-9 gnd Laser (DE-588)4034610-9 gnd Chlor (DE-588)4147748-0 gnd Excimerlaser (DE-588)4153300-8 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4294605-0 (DE-588)4130887-6 (DE-588)4000648-7 (DE-588)4170399-6 (DE-588)4222074-9 (DE-588)4034610-9 (DE-588)4147748-0 (DE-588)4153300-8 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_alt | Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_auth | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_exact_search | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_full | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_fullStr | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_full_unstemmed | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_short | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_sort | laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| topic | Wafer (DE-588)4294605-0 gnd Luft (DE-588)4130887-6 gnd Ätzen (DE-588)4000648-7 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Trockenätzen (DE-588)4222074-9 gnd Laser (DE-588)4034610-9 gnd Chlor (DE-588)4147748-0 gnd Excimerlaser (DE-588)4153300-8 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Wafer Luft Ätzen Molekularstrahlepitaxie Trockenätzen Laser Chlor Excimerlaser Silicium Hochschulschrift |
| work_keys_str_mv | AT jiangweidong laserinducedchemicaletchingofsiliconatwavelengthof248nminchlorineatmosphere |