Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1996
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| Schlagworte: | |
| Beschreibung: | II, 135 S. Ill., graph. Darst. |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV010809883 | ||
| 003 | DE-604 | ||
| 005 | 20221212 | ||
| 007 | t | ||
| 008 | 960624s1996 gw ad|| m||| 00||| engod | ||
| 035 | |a (OCoLC)633132858 | ||
| 035 | |a (DE-599)BVBBV010809883 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-91 |a DE-12 |a DE-703 |a DE-11 |a DE-355 |a DE-706 | ||
| 084 | |a ELT 285d |2 stub | ||
| 100 | 1 | |a Jiang, Weidong |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |c von Weidong Jiang |
| 246 | 1 | 3 | |a Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| 264 | 1 | |c 1996 | |
| 300 | |a II, 135 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Univ. d. Bundeswehr, Diss., 1996 | ||
| 650 | 0 | 7 | |a Wafer |0 (DE-588)4294605-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Luft |0 (DE-588)4130887-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Ätzen |0 (DE-588)4000648-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Trockenätzen |0 (DE-588)4222074-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Laser |0 (DE-588)4034610-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Chlor |0 (DE-588)4147748-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Excimerlaser |0 (DE-588)4153300-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 1 | |a Laser |0 (DE-588)4034610-9 |D s |
| 689 | 0 | 2 | |a Ätzen |0 (DE-588)4000648-7 |D s |
| 689 | 0 | 3 | |a Chlor |0 (DE-588)4147748-0 |D s |
| 689 | 0 | 4 | |a Luft |0 (DE-588)4130887-6 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 1 | |a Wafer |0 (DE-588)4294605-0 |D s |
| 689 | 1 | 2 | |a Molekularstrahlepitaxie |0 (DE-588)4170399-6 |D s |
| 689 | 1 | 3 | |a Trockenätzen |0 (DE-588)4222074-9 |D s |
| 689 | 1 | 4 | |a Excimerlaser |0 (DE-588)4153300-8 |D s |
| 689 | 1 | 5 | |a Chlor |0 (DE-588)4147748-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007222063 | ||
Datensatz im Suchindex
| _version_ | 1804125294645215233 |
|---|---|
| any_adam_object | |
| author | Jiang, Weidong |
| author_facet | Jiang, Weidong |
| author_role | aut |
| author_sort | Jiang, Weidong |
| author_variant | w j wj |
| building | Verbundindex |
| bvnumber | BV010809883 |
| classification_tum | ELT 285d |
| ctrlnum | (OCoLC)633132858 (DE-599)BVBBV010809883 |
| discipline | Elektrotechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02129nam a2200565 c 4500</leader><controlfield tag="001">BV010809883</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20221212 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">960624s1996 gw ad|| m||| 00||| engod</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)633132858</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010809883</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-12</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 285d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jiang, Weidong</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere</subfield><subfield code="c">von Weidong Jiang</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">II, 135 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">München, Univ. d. Bundeswehr, Diss., 1996</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Wafer</subfield><subfield code="0">(DE-588)4294605-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Luft</subfield><subfield code="0">(DE-588)4130887-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ätzen</subfield><subfield code="0">(DE-588)4000648-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Molekularstrahlepitaxie</subfield><subfield code="0">(DE-588)4170399-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Trockenätzen</subfield><subfield code="0">(DE-588)4222074-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Laser</subfield><subfield code="0">(DE-588)4034610-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Chlor</subfield><subfield code="0">(DE-588)4147748-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Excimerlaser</subfield><subfield code="0">(DE-588)4153300-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Laser</subfield><subfield code="0">(DE-588)4034610-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Ätzen</subfield><subfield code="0">(DE-588)4000648-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Chlor</subfield><subfield code="0">(DE-588)4147748-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">Luft</subfield><subfield code="0">(DE-588)4130887-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Wafer</subfield><subfield code="0">(DE-588)4294605-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Molekularstrahlepitaxie</subfield><subfield code="0">(DE-588)4170399-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">Trockenätzen</subfield><subfield code="0">(DE-588)4222074-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="4"><subfield code="a">Excimerlaser</subfield><subfield code="0">(DE-588)4153300-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="5"><subfield code="a">Chlor</subfield><subfield code="0">(DE-588)4147748-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007222063</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010809883 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:59:17Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007222063 |
| oclc_num | 633132858 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-703 DE-11 DE-355 DE-BY-UBR DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-703 DE-11 DE-355 DE-BY-UBR DE-706 |
| physical | II, 135 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| record_format | marc |
| spelling | Jiang, Weidong Verfasser aut Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere 1996 II, 135 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Univ. d. Bundeswehr, Diss., 1996 Wafer (DE-588)4294605-0 gnd rswk-swf Luft (DE-588)4130887-6 gnd rswk-swf Ätzen (DE-588)4000648-7 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Trockenätzen (DE-588)4222074-9 gnd rswk-swf Laser (DE-588)4034610-9 gnd rswk-swf Chlor (DE-588)4147748-0 gnd rswk-swf Excimerlaser (DE-588)4153300-8 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Laser (DE-588)4034610-9 s Ätzen (DE-588)4000648-7 s Chlor (DE-588)4147748-0 s Luft (DE-588)4130887-6 s DE-604 Wafer (DE-588)4294605-0 s Molekularstrahlepitaxie (DE-588)4170399-6 s Trockenätzen (DE-588)4222074-9 s Excimerlaser (DE-588)4153300-8 s |
| spellingShingle | Jiang, Weidong Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere Wafer (DE-588)4294605-0 gnd Luft (DE-588)4130887-6 gnd Ätzen (DE-588)4000648-7 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Trockenätzen (DE-588)4222074-9 gnd Laser (DE-588)4034610-9 gnd Chlor (DE-588)4147748-0 gnd Excimerlaser (DE-588)4153300-8 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4294605-0 (DE-588)4130887-6 (DE-588)4000648-7 (DE-588)4170399-6 (DE-588)4222074-9 (DE-588)4034610-9 (DE-588)4147748-0 (DE-588)4153300-8 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_alt | Laser-induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_auth | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_exact_search | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_full | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_fullStr | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_full_unstemmed | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere von Weidong Jiang |
| title_short | Laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| title_sort | laser induced chemical etching of silicon at wavelength of 248 nm in chlorine atmosphere |
| topic | Wafer (DE-588)4294605-0 gnd Luft (DE-588)4130887-6 gnd Ätzen (DE-588)4000648-7 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd Trockenätzen (DE-588)4222074-9 gnd Laser (DE-588)4034610-9 gnd Chlor (DE-588)4147748-0 gnd Excimerlaser (DE-588)4153300-8 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Wafer Luft Ätzen Molekularstrahlepitaxie Trockenätzen Laser Chlor Excimerlaser Silicium Hochschulschrift |
| work_keys_str_mv | AT jiangweidong laserinducedchemicaletchingofsiliconatwavelengthof248nminchlorineatmosphere |