Interface degradation in advanced double-poly self-aligned bipolar transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
1995
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | II, 97 S. graph. Darst. |
Internformat
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| 100 | 1 | |a Lü, Jianqiang |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Interface degradation in advanced double-poly self-aligned bipolar transistors |c Jianqiang Lü |
| 264 | 1 | |c 1995 | |
| 300 | |a II, 97 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Techn. Univ., Diss., 1995 | ||
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Datensatz im Suchindex
| _version_ | 1807320675500687360 |
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| adam_text |
CONTENTS
1
INTRODUCTION
1
1.1
PROGRESS
IN
BIPOLAR
TRANSISTOR
TECHNOLOGY
1
1.2
SHORT
OVERVIEW
OF
THE
WORK
DESCRIBED
IN
THIS
THESIS
5
REFERENCES
7
2
DEGRADATION
EFFECTS
IN
BIPOLAR
TRANSISTORS
9
2.1
INTRODUCTION
9
2.2
PRINCIPLE
OF
BIPOLAR
TRANSISTOR
PERFORMANCE
9
2.2.1
TRANSISTOR
GAIN
MECHANISM
9
2.2.2
BASIC
CURRENT-VOLTAGE
RELATIONSHIP
OF
TRANSISTOR
12
2.3
DEVICE
STRUCTURE
AND
EXPERIMENTAL
PERFORMANCE
13
2.4
MEASUREMENT
RESULTS
16
2.4.1
I-V
CHARACTERISTICS
16
2.4.2
BASIC
DEGRADATION
PHENOMENA
17
2.4.3
THRESHOLD
STRESS
VOLTAGE
19
2.4.4
PERIMETER
EFFECT
21
2.4.5
REVERSE
MODE
23
2.5
DEGRADATION
MECHANISM
23
2.5.1
SIMULATION
AND
MICROSCOPIC
ORIGINS
23
2.5.2
SEMI-EMPIRICAL
MODEL
26
2.6
SUMMARY
29
REFERENCES
30
3.
TUNNELING
EFFECTS
IN
BASE-EMITTER
JUNCTION
32
3.1
INTRODUCTION
32
3.2
BAND-TO-BAND
TUNNELING
IN
REVERSE-BIASED
JUNCTIONS
34
3.2.1
INTRODUCTION
34
3.2.2
MEASUREMENT
RESULTS
AND
DISCUSSION
36
3.3
TUNNELING
IN
FORWARD-BIASED
JUNCTIONS
38
3.3.1
INTRODUCTION
38
3.3.2
TRAP-ASSISTED
TUNNELING
PROCESSES
40
3.3.3
MEASUREMENT
RESULTS
AND
DISCUSSION
49
3.4
PHONON
(SIO
2
AND
SI)
ASSISTED
TUNNELING
53
3.4.1
INTRODUCTION
53
3.4.2
RESULTS
AND
DISCUSSION
54
3.5
SUMMARY
57
REFERENCES
58
4.
RANDOM
TELEGRAPH
NOISE
IN
BIPOLAR
TRANSISTORS
60
4.1
INTRODUCTION
60
4.2
EXPERIMENTAL
PROCEDURE
61
4.3
RESULTS
AND
DISCUSSION
62
4.3.1
1/F
NOISE
62
4.3.2
OBSERVATION
OF
RANDOM
TELEGRAPH
NOISE
62
4.3.3
TWO-LEVEL
RTN
64
4.3.4
INITIAL
DISCUSSION
66
4.3.5
VOLTAGE
DEPENDENCE
69
4.3.6
TEMPERATURE
DEPENDENCE
73
4.4
SUMMARY
"
74
REFERENCES
75
5.
DEFECTS
AT
THE
SI-SIO,
INTERFACE
76
5.1
INTRODUCTION
76
5.2
GENERAL
PROPERTIES
OF
MOS
DEVICES
76
5.2.1
CAPACITANCE
OF
MOS
DEVICES
76
5.2.2
INFLUENCE
OF
THE
FERMI
ENERGY
AND
THE
FIXED
CHARGE
78
5.2.3.
INFLUENCE
OF
INTERFACE
STATES
78
5.2.4
EXTERNAL
INFLUENCE
79
5.2.5
CURRENT-VOLTAGE
CHARACTERISTICS
79
5.3
SAMPLE
DESCRIPTION
79
5.4
CHARACTERISTICS
OF
MOS
DEVICES
80
5.4.1.
MEASUREMENT
METHODS
80
5.4.2
CALCULATION
OF
THE
INTERFACE
STATE
DENSITY
82
5.4.3
RESULTS
83
5.5
DEGRADATION
OF
MOS
DEVICES
85
5.5.1
THE
STRESS
CONDITIONS
85
5.5.2
OBSERVATION
OF
THE
DEGRADATION
ON
THE
INTERFACE
87
5.5.3
TIME
DEPENDENCE
OF
THE
DEGRADATION
91
5.6
SUMMARY
93
REFERENCES
94
6
CONCLUSION
95
ACKNOWLEDGMENTS
97 |
| any_adam_object | 1 |
| author | Lü, Jianqiang |
| author_facet | Lü, Jianqiang |
| author_role | aut |
| author_sort | Lü, Jianqiang |
| author_variant | j l jl |
| building | Verbundindex |
| bvnumber | BV010790929 |
| classification_tum | ELT 315d |
| ctrlnum | (OCoLC)75667073 (DE-599)BVBBV010790929 |
| discipline | Elektrotechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV010790929 |
| illustrated | Illustrated |
| indexdate | 2024-08-14T00:28:27Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007208196 |
| oclc_num | 75667073 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-12 DE-706 DE-11 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-12 DE-706 DE-11 DE-188 |
| physical | II, 97 S. graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| record_format | marc |
| spelling | Lü, Jianqiang Verfasser aut Interface degradation in advanced double-poly self-aligned bipolar transistors Jianqiang Lü 1995 II, 97 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1995 npn-Transistor (DE-588)4390966-8 gnd rswk-swf Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Degradation Technik (DE-588)4206992-0 gnd rswk-swf Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content npn-Transistor (DE-588)4390966-8 s Metall-Halbleiter-Kontakt (DE-588)4169590-2 s Degradation Technik (DE-588)4206992-0 s DE-604 Bipolartransistor (DE-588)4145669-5 s Heißes Elektron (DE-588)4159455-1 s DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007208196&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Lü, Jianqiang Interface degradation in advanced double-poly self-aligned bipolar transistors npn-Transistor (DE-588)4390966-8 gnd Heißes Elektron (DE-588)4159455-1 gnd Degradation Technik (DE-588)4206992-0 gnd Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| subject_GND | (DE-588)4390966-8 (DE-588)4159455-1 (DE-588)4206992-0 (DE-588)4169590-2 (DE-588)4145669-5 (DE-588)4113937-9 |
| title | Interface degradation in advanced double-poly self-aligned bipolar transistors |
| title_auth | Interface degradation in advanced double-poly self-aligned bipolar transistors |
| title_exact_search | Interface degradation in advanced double-poly self-aligned bipolar transistors |
| title_full | Interface degradation in advanced double-poly self-aligned bipolar transistors Jianqiang Lü |
| title_fullStr | Interface degradation in advanced double-poly self-aligned bipolar transistors Jianqiang Lü |
| title_full_unstemmed | Interface degradation in advanced double-poly self-aligned bipolar transistors Jianqiang Lü |
| title_short | Interface degradation in advanced double-poly self-aligned bipolar transistors |
| title_sort | interface degradation in advanced double poly self aligned bipolar transistors |
| topic | npn-Transistor (DE-588)4390966-8 gnd Heißes Elektron (DE-588)4159455-1 gnd Degradation Technik (DE-588)4206992-0 gnd Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Bipolartransistor (DE-588)4145669-5 gnd |
| topic_facet | npn-Transistor Heißes Elektron Degradation Technik Metall-Halbleiter-Kontakt Bipolartransistor Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007208196&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT lujianqiang interfacedegradationinadvanceddoublepolyselfalignedbipolartransistors |