Proceedings of the Topical Workshop on Heterostructure Microelectronics: Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Exeter
Pergamon
1995
|
| Schriftenreihe: | Solid-state electronics
38,9 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufn. eines Zs.-H. |
| Beschreibung: | VII S., S. 1551 - 1803 Ill., graph. Darst. |
Internformat
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| 264 | 1 | |a Exeter |b Pergamon |c 1995 | |
| 300 | |a VII S., S. 1551 - 1803 |b Ill., graph. Darst. | ||
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| 500 | |a Einzelaufn. eines Zs.-H. | ||
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Datensatz im Suchindex
| _version_ | 1804125270021505024 |
|---|---|
| adam_text | SPECIAL
ISSUE
PROCEEDINGS
OF THE TOPICAL WORKSHOP ON
HETEROSTRUCTURE MICROELECTRONICS
CONTENTS
Preface
..............................................................................................................................
vii
Committees
...................................................................................................................... viii
SESSION
1
APPLICATIONS—
1
Masahiro Muraguchi and Masayoshi Aikawa: Microwave components for cellular
portable radiotelephone
.................................................................................................... 1551
Paul Greiling, Conilee Kirkpatrick and Gary Valentine: Military applications for
heterostructure microelectronics technology
................................................................... 1559
K.
Ношо:
Applications of HBTs
................................................................................... 1569
Loi
D.
Nguyen, Minh V.
Le,
Takyiu Liu, Mark
Lui, Karen
Kaneko, Eric Holzman
and Michael J. Delaney: Millimeter wave InP
HEMT
technology: performance and
applications
...................................................................................................................... 1575
Saburo Takamiya, Naohtto Yoshtoa,
Norio
Hayafuji, Takuji Sonoda and
Shigeru Mitsui: Overview of recent development of HEMTs in the MM-wave range
1581
SESSION
2
APPLICATIONS—
2
Кепсні
Ohata, Masahiro Funabashi, Takahmi Inoue, Ken ichi Hosoya,
Kazuhiko
Onda
and Masaaki Kuzuhara: Millimeter wave heterojunction
FET
monolithic integrated circuits for compact communication systems
............................... 1589
U.
König
and H.
Dämbkes: SiGe
HBTs and HFETs
.................................................... 1595
Lutz J.
Micheel: Multivalued logic applications of heterostructure devices and circuitry
1603
[continued
PERGAMON ^
вв31И1·1
SSELAS 38(9) 1551-1734 (1994)
SESSION 3
DEVICE TECHNOLOGY—1
J. B.
Shealy, W.-N. Jiang, P. A. Parikh, G. Verzellis and
U. K.
Mishra: Junction
heterostructures for high performance electronics
.......................................................... 1607
Kami Yoh, Hayato Takeuchi, Hideki Hasegawa, Satoshi Izumiya and
Masataka Inoue: Improvements of drain current characteristics of InAs field-effect
transistors by the surface reaction of platinum gate
....................................................... 1611
Fritz Schuermeyer, Charles Cerny, J. P. Loehr and
R. E.
Sherriff: Photoelectric
emission and conductance studies on fully fabricated PHEMTs
................................... 1615
K. Mochizuki, T. Nakamura, T. Tanoue and H. Masuda: AlGaAs/GaAs HBTs with
buried SiO2 in the extrinsic collector
................................................................................ 1619
SESSION
4
MANUFACTURING
K. A. Christianson, C
Moglestue and W. T. Anderson: Failure mechanisms in
AlGaAs/GaAs HEMTs
................................................................................................... 1623
Y. Ashizawa,
С
Nozaki, T. Noda, A. Sasaki and S. Fujita: Surface related degradation
of InP-based HEMTs during thermal stress
.................................................................... 1627
H. T. Yamada, R. Shigemasa, H. I. Fujishiro, S. Nishi and T.
Saito:
Fabrication of
0.2
μτη
gate pseudomorphic inverted
HEMT
by phase-shifting technology
................... 1631
SESSION
5
POWER DEVICES—
1
F. Ren,
С
R. Abernathy, S. J. Pearton, L. W. Yang and S. T.
Fu:
Novel fabrication
of self-aligned GaAs/AlGaAs and GaAs/InGaP microwave power heterojunction bipolar
transistors
......................................................................................................................... 1635
G. Jackson, W. Struble, M.
Adlerstein,
S.
Shanfield,
M.
Совв,
M. Zaitlin,
E. Tong,
R.
Pučel
and P. Saledas: High gain, pulsed power AlGaAs/GaAs HBTs
.................... 1641
J. J.
Liou,
A. Ortiz-Conde, L. L.
Liou
and C.
I. Huang: Thermal-avalanche interacting
behavior of AlGaAs/GaAs multi-emitter finger heterojunction bipolar transistors
...... 1645
SESSION
6
POWER DEVICES—
2
M.
Komáru,
J. Udomoto, A. Inoue, T. Shimura, M. Sakai, T. Kuragaki and T.
Tanino:
Study on d.c. bias mode for common emitter HBT
........................................................ 1649
H. Sato, M. Hasegawa, M. Miyauchi, J. K. Twynam, K. Sakuno, M. Akagi,
K. Yamamura and T. Miyajima: Optimization of the HBT and bump configuration for
bump heat sink structure and application to HBT power MMICs
................................ 1653
CONTENTS—
continued]
J. K. TwYNAM,
M.
Yagura,
К.
Kishimoto,
T.
Kinosada,
H.
Sato and
M. Shimizu:
Thermal
stabilization of AlGaAs/GaAs power HBTs using
л
-Al, Ga,
_,As
emitter
ballast
resistors with high thermal coefficient of resistance
......................................................... 1657
S. G. Ingram, E. H. Linfield, K. M. Brown,
G. A. C
Jones, D. A. Richie and
M. J. Kelly: Performance of double heterostructure unipolar transistors in high
frequency power applications
........................................................................................... 1663
SESSION
7
MATERIAL TECHNOLOGY
F. Alexandre, J.
L. Benchimol, P. Launay, J. Dangla and
С
Dubon-Chevallier:
Modern epitaxial techniques for HBT structures
............................................................ 1667
Jun-ichi Shirakashi and Makoto Konagai: InGaP/GaAs and InP/InGaAs hetero-
junction bipolar transistors with a super heavily carbon-doped base grown by
metalorganic molecular beam epitaxy
.............................................................................. 1675
S. Suzuki, S. Kodama and
H. Hasegawa: A
novel passivation technology of
InGaAs surfaces using Si interface control layer and its application to field effect
transistor
........................................................................................................................... 1679
S. SfflOBARA, K. Sasaki and H. Hasegawa: Surface electrical breakdown chaaracteristics
of molecular beam epitaxial layers grown at low temperatures
...................................... 1685
SESSION
8
DEVICE TECHNOLOGY—
2
Peter Asbeck: Development of HBT structures to minimize parasitic elements
............ 1691
D. Pavlidis, K. Hong, K.
Hein
and Y. Kwon: Material and device properties of MOCVD
grown InAlAs/InGaAs HEMTs
....................................................................................... 1697
Yutaka Matsuoka and Eiichi
Sano:
InP/InGaAs double-heterostructure bipolar
transistors for high-speed ICs and OEICs
....................................................................... 1703
K.
Imamura,
M.
Takatsu,
T.
Mori, S.
Muto
and
N.
Yokoyama: Open-base multi-
emitter HBTs with increased logic functions
................................................................... 1711
SESSION
9
1С
TECHNOLOGY
H. Suehiro, T. Miyata,
N.
Hara
and S. Kuroda: A
48.1
ps
HEMT
DCFL
NAND
circuit
with a dual gate structure
................................................................................................. 1717
P
J· Zampardi, S. M. Beccue, J. Yu, K. Pedrotti, R. L. Pierson, W. J. Ho, M. F. Chang
and
К. С
Wang: Circuit demonstrations in a GaAs BiFET technology
....................... 1723
[continued
CONTENTS—
continued}
SESSION 10
DEVICE TECHNOLOGY—3
M. S. Shur, W. C.
Peatman,
H.
Park, W. Grimm and M.
Hurt: Novel
heterodimensional
diodes and transistors
....................................................................................................... 1727
A. Sadek
and K.
Ismail: Si/SiGe CMOS possibilities
...................................................... 1731
Keyword Index
................................................................................................................
I
Author Index
...................................................................................................................
II
INDEXED IN
Ita.
Akrt, Cam.
Sci
ЛЬ«г.
Chan. Ainu.
Serv.,
Curr. Conl./Phy«.
Chem.
ft Earth
Sci..
Curr. Coot
Ent.
Tech.
A Appi. Sci.,
Curr Tech Indx.
Eng.
Indi,
INSPEC
Ома.,
PASCAL-CNRS
Оли... Сот.
Cont.
Sci.
Cit
Indx,
Curr. Cont. SCISEARCH Dau., SSSA/CÎSA/ECA/ISMEC,
Mater
Sa. Cit Indx
PERGAMON
SSELAS
38(9) 1551-1734 (1995)
|
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| spelling | Topical Workshop on Heterostructure Microelectronics 1 1994 Susono Verfasser (DE-588)5158563-7 aut Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 Exeter Pergamon 1995 VII S., S. 1551 - 1803 Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Solid-state electronics 38,9 Einzelaufn. eines Zs.-H. Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 Susono-City gnd-content Heterostruktur-Bauelement (DE-588)4236378-0 s DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007205458&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4236378-0 (DE-588)1071861417 |
| title | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_auth | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_exact_search | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_full | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_fullStr | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_full_unstemmed | Proceedings of the Topical Workshop on Heterostructure Microelectronics Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| title_short | Proceedings of the Topical Workshop on Heterostructure Microelectronics |
| title_sort | proceedings of the topical workshop on heterostructure microelectronics mt fuji resort area susono city japan august 17 19 1994 |
| title_sub | Mt. Fuji Resort Area, Susono-City, Japan, August 17 - 19, 1994 |
| topic | Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Heterostruktur-Bauelement Konferenzschrift 1994 Susono-City |
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