A thermodynamically motivated formulation of the energy model of semiconductor devices:
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Berlin
Weierstraß-Inst. für Angewandte Analysis und Stochastik
1995
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Schriftenreihe: | Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint
210 |
Beschreibung: | 27 S. |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
---|---|---|---|
001 | BV010756862 | ||
003 | DE-604 | ||
005 | 19960521 | ||
007 | t | ||
008 | 960506s1995 gw |||| 00||| eng d | ||
016 | 7 | |a 947296051 |2 DE-101 | |
035 | |a (OCoLC)75716026 | ||
035 | |a (DE-599)BVBBV010756862 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 0 | |a eng | |
044 | |a gw |c DE | ||
049 | |a DE-355 | ||
084 | |a SI 304 |0 (DE-625)143111: |2 rvk | ||
100 | 1 | |a Albinus, Günter |e Verfasser |4 aut | |
245 | 1 | 0 | |a A thermodynamically motivated formulation of the energy model of semiconductor devices |c Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
264 | 1 | |a Berlin |b Weierstraß-Inst. für Angewandte Analysis und Stochastik |c 1995 | |
300 | |a 27 S. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |v 210 | |
830 | 0 | |a Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |v 210 |w (DE-604)BV009885922 |9 210 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-007184120 |
Datensatz im Suchindex
_version_ | 1804125237746335745 |
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any_adam_object | |
author | Albinus, Günter |
author_facet | Albinus, Günter |
author_role | aut |
author_sort | Albinus, Günter |
author_variant | g a ga |
building | Verbundindex |
bvnumber | BV010756862 |
classification_rvk | SI 304 |
ctrlnum | (OCoLC)75716026 (DE-599)BVBBV010756862 |
discipline | Mathematik |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01167nam a2200301 cb4500</leader><controlfield tag="001">BV010756862</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19960521 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">960506s1995 gw |||| 00||| eng d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">947296051</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)75716026</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010756862</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-355</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">SI 304</subfield><subfield code="0">(DE-625)143111:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Albinus, Günter</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">A thermodynamically motivated formulation of the energy model of semiconductor devices</subfield><subfield code="c">Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin</subfield><subfield code="b">Weierstraß-Inst. für Angewandte Analysis und Stochastik</subfield><subfield code="c">1995</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">27 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint</subfield><subfield code="v">210</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint</subfield><subfield code="v">210</subfield><subfield code="w">(DE-604)BV009885922</subfield><subfield code="9">210</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007184120</subfield></datafield></record></collection> |
id | DE-604.BV010756862 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T17:58:22Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007184120 |
oclc_num | 75716026 |
open_access_boolean | |
owner | DE-355 DE-BY-UBR |
owner_facet | DE-355 DE-BY-UBR |
physical | 27 S. |
publishDate | 1995 |
publishDateSearch | 1995 |
publishDateSort | 1995 |
publisher | Weierstraß-Inst. für Angewandte Analysis und Stochastik |
record_format | marc |
series | Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
series2 | Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
spelling | Albinus, Günter Verfasser aut A thermodynamically motivated formulation of the energy model of semiconductor devices Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. Berlin Weierstraß-Inst. für Angewandte Analysis und Stochastik 1995 27 S. txt rdacontent n rdamedia nc rdacarrier Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 210 Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint 210 (DE-604)BV009885922 210 |
spellingShingle | Albinus, Günter A thermodynamically motivated formulation of the energy model of semiconductor devices Weierstrass-Institut für Angewandte Analysis und Stochastik <Berlin>: Preprint |
title | A thermodynamically motivated formulation of the energy model of semiconductor devices |
title_auth | A thermodynamically motivated formulation of the energy model of semiconductor devices |
title_exact_search | A thermodynamically motivated formulation of the energy model of semiconductor devices |
title_full | A thermodynamically motivated formulation of the energy model of semiconductor devices Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_fullStr | A thermodynamically motivated formulation of the energy model of semiconductor devices Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_full_unstemmed | A thermodynamically motivated formulation of the energy model of semiconductor devices Günter Albinus. Weierstrass-Institut für Angewandte Analysis und Stochastik im Forschungsverbund Berlin e.V. |
title_short | A thermodynamically motivated formulation of the energy model of semiconductor devices |
title_sort | a thermodynamically motivated formulation of the energy model of semiconductor devices |
volume_link | (DE-604)BV009885922 |
work_keys_str_mv | AT albinusgunter athermodynamicallymotivatedformulationoftheenergymodelofsemiconductordevices |