Epitaxial growth processes: 26 - 27 January 1994, Los Angeles, California
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Bellingham, Wash.
SPIE, the International Soc. for Optical Engineering
1994
|
| Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
2140 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | VII, 190 S. Ill., graph. Darst. |
| ISBN: | 0819414352 |
Internformat
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| 245 | 1 | 0 | |a Epitaxial growth processes |b 26 - 27 January 1994, Los Angeles, California |c Chris J. Palmstrøm ... chairs/eds. |
| 264 | 1 | |a Bellingham, Wash. |b SPIE, the International Soc. for Optical Engineering |c 1994 | |
| 300 | |a VII, 190 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 2140 | |
| 650 | 4 | |a Crystal growth |v Congresses | |
| 650 | 4 | |a Epitaxy |v Congresses | |
| 650 | 4 | |a Molecular beam epitaxy |v Congresses | |
| 650 | 4 | |a Semiconductors |x Materials |v Congresses | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1994 |z Los Angeles, Calif. |2 gnd-content | |
| 689 | 0 | 0 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 0 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Palmstrøm, Chris J. |4 edt | |
| 711 | 2 | |a Epitaxial Growth Processes |d 1994 |c Los Angeles, CA |j Sonstige |0 (DE-588)1091340447 |4 oth | |
| 830 | 0 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 2140 |w (DE-604)BV000010887 |9 2140 | |
| 856 | 4 | 2 | |u http://digitale-objekte.hbz-nrw.de/storage2/2018/07/06/file_403/8075802.pdf |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
| _version_ | 1804125223717437440 |
|---|---|
| adam_text | Contents
v
Conference
Committee
vii
Introduction
SESSION
1
GROWTH MECHANISMS
2
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) study of gallium
arsenide grown by molecular beam epitaxy (Invited Paper)
[2140-02]
В. С
Orr,
M. D.
Johnson,
С.
Orme, J. Suclijono, A.
W.
Hunt, Univ. of Michigan
10
Diffraction condition dependence of reflection high-energy electron diffraction (RHEED)
dampening during molecular-beam epitaxy (MBE) growth
[2140-03]
T.
R. Block,
К. С
Eiynk, D. P. Neikirk,
В. С
Streetman, Univ. of Texas/Austin
25
Pyrolysis of novel and safe phosphorus sources for chemical-beam epitaxy applications
[2140-05]
С
W.
Hill,
L.
P. Sadwick,
С.
W. Kim,
H. H.
Ryu,
C. B. Stringfellow, Univ.
of Utah
36
Thin film growth effects related to the propensity for clustering
[2140-07]
M. Zinke-Allmang, S. C. Puddephatt,
T. D.
Lowes, Univ. of Western Ontario (Canada)
46
Stress-promoted surface kinetics as a precursor of islanding
[2140-08]
B. I. Yakobson, North Carolina State Univ.
SESSION
2
GROWTH AND PROPERTIES OF ARTIFICIALLY STRUCTURED MATERIALS I
58
Selective area growth of Ill-V semiconductors by chemical beam epitaxy: study of reaction
mechanisms (Invited Paper)
[2140-09]
G. J. Davies, P. J. Skevington, British Telecom Research Labs. (UK); J. S. Foord, C. I. French,
C. L.
Levoguer, Univ. of Oxford (UK)
68
Growth and characterization of spontaneously ordered
ΑΙ Ι η
As and GalnAs on InP
[2140-11 ]
D. J.
Arent,
M.
Bode, P. Ahrenkiel,
R. Ahrenkiel, K. A. Bertness, S. R.
Kurtz,
C.
Kramer,
J. M.
Olson, National Renewable Energy Lab.
75
Low-pressure metallorganic vapor-phase epitaxy (LP-MOVPE) growth and characterization of
short-period strained-layer superlattices (SPSLSs) on InP substrates
[2140-12]
A. Lindner, Q. Liu, F. Scheffer, W.
Prost,
F.-J. Tegude, Univ.
Duisburg (FRG)
SESSION
3
MAGNETIC MATERIALS AND II-VI COMPOUNDS
86
Magneto-optical spectroscopy as a structure- and chemical-order sensitive probe (Invited
Paper)
[2140-15]
D. K.
Weiler,
G. R.
Harp,
R. F. C.
Farrow, A. Carl,
IBM Almaden Research Ctr.; J. Sticht, Biosym
Technologies Inc.
95
Use of re-emitted positron spectroscopy as a structural probe of metal overlayer systems:
Pd/Cu(1
00) [2140-16]
G. W. Anderson, K. O. Jensen, P. R. Norton, P. J.
Schultz, Univ.
of Western Ontario (Canada)
SPIE
Vol.
2140
Epitaxial Growth Processes
( 1994) /
Hi
106
Molecular-beam epitaxy (MBE) growth of chemically ordered Co-Pt and Fe-Pt alloy phases
[2140-17]
R. F. C. Farrow, G. R. Harp, D. K.
Weiler,
R.
F.
Marks,
M.
F. Toney,
A. Cebollada,
IBM Almaden
Research Ctr.; T. A. Rabedeau, Stanford Synchrotron Research Lab.
112
Structure
and magnetic properties of
Fe overlayers
on Al(IOO)
[2140-18]
С.
W.
Anderson,
M.
С.
Hanf,
P. R. Norton, Univ.
of
Western Ontario (Canada); C. Cigault,
J. R. Dutcher, Univ.
of
Guelph (Canada)
118
Interfacial contributions
to magnetic thin film anisotropy arising from epitaxial growth
processes in metal/semiconductor structures (Invited Paper)
[2140-19]
B. T.
Jonker,
Naval Research Lab.
131
Epitaxial growth of quaternary (Zn,Mg)(S,Se) for pseudomorphic separate confinement
heterostructure
(SCH)
laser structures
[2140-20]
L. He, D.
C. Grillo,
J.
Han,
Y. Fan, M.
D.
Ringle,
S. M. Clark, R. L.
Gunshor, Purdue Univ.;
H. Jeon, A. Salokatve, A.
V.
Nurmikko,
Brown
Univ.; G. C. Hua,
N.
Otsuka, Purdue Univ.
138
Metallorganic
vapor
phase
epitaxy (MOVPE) growth of ZnSe,.Jex on (111)
and
(001)
CaAs
substrates
[2140-21]
H. Stanzl, A. Rosenauer,
K. Wolf,
M.
Kastner,
В.
Hahn,
W.
Gebhardt, Univ. Regensburg (FRG)
SESSION 4
GROWTH AND PROPERTIES OF ARTIFICIALLY STRUCTURED MATERIALS II
______________
150
InAsP/lnP strained quantum wells grown by gas-source molecular-beam epitaxy on lnP(100)
and (111)B substrates (Invited Paper)
[2140-23]
C. W.
Tu, H. Q.
Hou, Univ. of
California/San Diego
158
Piezoactive
(1
10Ь
and (hlD-lnAs/CaAs heterostructures
for nonlinear optical applications
[2140-24]
M.
lig, K.
H. Ploog, Paul-Drude-Institut
für Festkörperelektronik
(FRG); A. Trampert,
Max-Planck-Institut für Festkörperforschung (FRG)
167
Analysis of growth parameters and strain in GalnSb/lnAs superlattices
[2140-25}
J. M. Van Hove, A. M. Wowchak, G. L. Carpenter, P. P. Chow, SVT Associates; L. A. Chow,
Stanford Univ.
179
Control of surface morphology and strain relaxation in InCaAs grown on GaAs using a
step-graded buffer
[2140-27]
R. S. Goldman,
J. C
P. Chang, K. L. Kavanagh, Univ. of California/San Diego
189
Addendum
190
Author Index
iv /
SPIE Voi.
2140
Epitaxial Growth Processes (19S4)
|
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| id | DE-604.BV010744086 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:58:09Z |
| institution | BVB |
| institution_GND | (DE-588)1091340447 |
| isbn | 0819414352 |
| language | English |
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| spelling | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California Chris J. Palmstrøm ... chairs/eds. Bellingham, Wash. SPIE, the International Soc. for Optical Engineering 1994 VII, 190 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 2140 Crystal growth Congresses Epitaxy Congresses Molecular beam epitaxy Congresses Semiconductors Materials Congresses Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 Los Angeles, Calif. gnd-content Epitaxie (DE-588)4152545-0 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Palmstrøm, Chris J. edt Epitaxial Growth Processes 1994 Los Angeles, CA Sonstige (DE-588)1091340447 oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 2140 (DE-604)BV000010887 2140 http://digitale-objekte.hbz-nrw.de/storage2/2018/07/06/file_403/8075802.pdf Inhaltsverzeichnis Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007174806&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Crystal growth Congresses Epitaxy Congresses Molecular beam epitaxy Congresses Semiconductors Materials Congresses Halbleitertechnologie (DE-588)4158814-9 gnd Epitaxie (DE-588)4152545-0 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4152545-0 (DE-588)1071861417 |
| title | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California |
| title_auth | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California |
| title_exact_search | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California |
| title_full | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California Chris J. Palmstrøm ... chairs/eds. |
| title_fullStr | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California Chris J. Palmstrøm ... chairs/eds. |
| title_full_unstemmed | Epitaxial growth processes 26 - 27 January 1994, Los Angeles, California Chris J. Palmstrøm ... chairs/eds. |
| title_short | Epitaxial growth processes |
| title_sort | epitaxial growth processes 26 27 january 1994 los angeles california |
| title_sub | 26 - 27 January 1994, Los Angeles, California |
| topic | Crystal growth Congresses Epitaxy Congresses Molecular beam epitaxy Congresses Semiconductors Materials Congresses Halbleitertechnologie (DE-588)4158814-9 gnd Epitaxie (DE-588)4152545-0 gnd |
| topic_facet | Crystal growth Congresses Epitaxy Congresses Molecular beam epitaxy Congresses Semiconductors Materials Congresses Halbleitertechnologie Epitaxie Konferenzschrift 1994 Los Angeles, Calif. |
| url | http://digitale-objekte.hbz-nrw.de/storage2/2018/07/06/file_403/8075802.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007174806&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000010887 |
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