Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV: 28 February - 1 March 1994, San Jose, Calif.
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English |
Veröffentlicht: |
Bellingham, Wash.
SPIE-The International Society for Optical Engineering
1994
|
Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
2194 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | IX, 420 S.: Ill. u. graph. Darst. |
ISBN: | 0819414891 |
Internformat
MARC
LEADER | 00000nam a2200000 cb4500 | ||
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035 | |a (DE-599)BVBBV010738483 | ||
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082 | 0 | |a 621.3815/31 |2 20 | |
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245 | 1 | 0 | |a Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV |b 28 February - 1 March 1994, San Jose, Calif. |c David O. Patterson, chair/ed. |
246 | 1 | 3 | |a Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing IV |
264 | 1 | |a Bellingham, Wash. |b SPIE-The International Society for Optical Engineering |c 1994 | |
300 | |a IX, 420 S.: Ill. u. graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 2194 | |
650 | 4 | |a Ion beam lithography |v Congresses | |
650 | 4 | |a Lithography, Electron beam |v Congresses | |
650 | 4 | |a Masks (Electronics) |v Congresses | |
650 | 4 | |a Semiconductors |x Etching |v Congresses | |
650 | 4 | |a X-ray lithography |v Congresses | |
650 | 0 | 7 | |a Fotolithografie |g Halbleitertechnologie |0 (DE-588)4174516-4 |2 gnd |9 rswk-swf |
655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1994 |z San Jose Calif. |2 gnd-content | |
689 | 0 | 0 | |a Fotolithografie |g Halbleitertechnologie |0 (DE-588)4174516-4 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Patterson, David O. |e Sonstige |4 oth | |
830 | 0 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 2194 |w (DE-604)BV000010887 |9 2194 | |
856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007169997&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
999 | |a oai:aleph.bib-bvb.de:BVB01-007169997 |
Datensatz im Suchindex
_version_ | 1804125216867090432 |
---|---|
adam_text | Contents
vii
Conference
Committee
¡χ
Introduction
PAPERS OF SPECIAL INTEREST
2
Micromechanics for actuators via deep x-ray lithography
[2194-09]
H. Cuckel, K. J. Skrobis, T. R. Christenson, J. Klein, Univ. of Wisconsin/Madison
11
Cell projection electron-beam lithography
[2194-25]
N.
Saitou, Hitachi Central Research Lab. (Japan); Y. Sakitani, Hitachi Ltd. (Japan)
22
Cost of ownership for x-ray proximity lithography
[2194-01]
K. Early, W. H. Arnold, Advanced Micro Devices, Inc.
SESSION
1
X-RAY LITHOGRAPHY: MANUFACTURING
__________________________________________
36
Overlay measurement and analysis of x-ray/optical lithography for mix-and-match device
applications
[2194-02]
A. W. Yanof, K. D. Cummings, P. A. Seese, M. Thompson, M. Drew, Motorola Inc.;
D. D. DeMay, IBM Corp.; J. M.
Oberschmidt,
R.
Fair, A. C.
Lamberti, IBM
Semiconductor
Research and Development Ctr.
51
Supporting early development of advanced high-performance logic with synchrotron orbital
radiation lithography: a feasibility evaluation
[2194-03]
L. W.
Liebmann,
A. T. Pomerené, D. D.
DeMay,
А. С.
Lamberti,
T. P. Donohue, J.
N. Burghartz,
IBM Microelectronics
63
Alignment accuracy improvement by consideration of wafer processing impacts
[2194-04]
K. Simon, H.-U.
Scheunemann, H.-L. Huber, Fraunhofer-Institut für Siliziumtechnologie (FRG);
P. Kaiser, Karl Suss KG (FRG)
73
22-nm overlay accuracy of synchrotron radiation stepper using an improved chromatic bifocus
alignment system
[2194-05]
S. Hamada, K.
Ito,
T.
Miyatake,
F. Sato, K.
Yamazaki, Sumitomo Heavy Industries, Ltd. (Japan)
83
Comparative study of x-ray lithography process optimization using theoretical and empirical
tools
[2194-06]
W. G. Waldo, Motorola Inc.;
С
Capasso, A. A. Kraznoperova, M. Khan, J. W. Taylor, F. Cerrina,
Univ. of Wisconsin/Madison
95
Development of a laboratory extreme-ultraviolet lithography tool
[2194-07]
D. A. Tichenor, G. D. Kubiak, M. E. Malinowski, R. H.
Stulen,
S. J. Haney, K. W.
Berger,
R. P.
Nissen,
G. A. Wilkerson, P. H. Paul, S. R. Birtola, P. S. lin, R. W. Arling,
A. K. Ray-Chaudhuri, W. C. Sweatt, W. W. Chow,
Sandia
National Labs.; j. E. Bjorkholm,
R. R.
Freeman,
M. D. Himei, A. A. MacDowel!, D. M. Tennant, L. A.
Fetter,
O. R.
Wood II,
W.
К.
Waskiewicz,
D. L.
White,
D. L.
Windt,
AT&T Bell Labs.;
T. E.
Jewell, Optical Engineering
Consultant
SPIE
Vol.
2194
liii
106
X-ray lithography processing at CXrL from beamline to quarter-micron NMOS devices
[2194-08]
R. Nachman, G. Chen, M. T. Reilly, G. M. Wells, J. P. Wallace, H. H. Li, A. A. Kraznoperova,
P. D. Anderson, E.
Brodsky,
Univ. of Wisconsin/Madison; E. Gartin, IBM Corp.; S. A. Campbell,
Univ. of Minnesota/Minneapolis-St. Paul; J. W. Taylor, F. Cerrina, Univ. of Wisconsin/Madison
SESSION
2
X-RAY LITHOGRAPHY: SUBSYSTEMS
120
Neon dense plasma focus point x-ray source for
¿
0.25
μνη
lithography
[2194-10]
R. R.
Prasad,
M. Krishnan, J.
Mangano,
P. A. Greene,
N.
Qi, Science Research Lab.
129
Spectral effects on x-ray lithography
[2194-11 ]
W. G. Waldo, Motorola Inc.; A. A. Kraznoperova, M. Khan, C. Capasso, J. W. Taylor, F. Cerrina,
Univ. of Wisconsin/Madison
144
Synchrotron irradiation stability of x-ray masks utilizing stress-free W-Ti absorbers and SiC
membranes
[2194-12]
H. Okuyama, Y. Yamashita, SORTEC Corp. (japan); K. Marumoto, H. Yabe, Y. Matsui, Mitsubishi
Electric Corp. (japan); Y. Yamaguchi, T. Shoki, H. Nagasawa,
Hoya
Corp. (Japan)
153
Development of a membrane-etch wet station for x-ray masks
[2194-13]
S. S. Marine,
D. E. Benoit,
К.
W.
Collins,
K. R.
Kimmel,
H. G. Linde, J. P. Lissor, D. M. Plouŕf,
j. A. Warner, C.
A. Whiting, IBM Microelectronics
Div.; J. D.
Towne, A. Cooper & Son
162
Optimization of ESCAP photoresist for x-ray lithography
[2194-14]
A. T. Pomerené, K. Petrillo, D. E.
Seeger, IBM Thomas
J. Watson
Research Ctr.; H.
Ito,
G. Breyta,
D. C.
Hofer, IBM Almaden Research Ctr.
169
Reactive-ion etching of tungsten for high-resolution x-ray masks
[2194-15]
L. M. Shirey, Naval Research
Lab.;
К.
W.
Foster, Applied Research Corp.;
W. P. Chu,
Motorola
Inc.; J. Kosakowski, K. W. Rhee,
SFA,
Inc.; E. A. Dobisz, C. R. Eddy, Jr., D. W. Park,
I. P. Isaacson, D. McCarthy,
C. R. Marrian, M. C.
Peckerar, Naval Research Lab.
178
Comparison of dry-etch approaches for tungsten patterning
[2194-16]
E. A. Dobisz, C. R. Eddy, jr., Naval Research
Lab.;
j. Kosakowski,
SFA,
Inc.; O. J. Glembocki,
L. M. Shirey, Naval Research
Lab.;
К.
W.
Foster, Applied Research Corp.;
W. P. Chu,
Naval
Research
Lab.;
К.
W.
Rhee,
SFA,
Inc.;
D. W. Park, C. R. K. Marrian, M. C.
Peckerar, Naval
Research Lab.
187
Effect of
condenser
mirror
surface
roughness on partially coherent
image formation in
proximity x-ray lithography
[2194-17]
J.
Xiao,
F. Cerrina, Univ.
of Wisconsin/Madison
198
Modeling of a positive chemically amplified photoresist for x-ray lithography
[2194-18]
A. A. Kraznoperova, S. J. Rhyner, Y. Zhu, J. W. Taylor, F. Cerrina, Univ. of Wisconsin/Madison;
W. G.
Waldo, Motorola Inc.
209
1-kW x-pinch soft x-ray source
[2194-19]
S.
С
Plidden, M. R.
Richter,
D.
A. Hammer,
D. H. Kalantar, Applied
Pulsed
Power, Inc.
221
Total evaluation of W-Ti absorber for x-ray mask
[2194-21 ]
K. Marumoto, H. Yabe, S.
Aya,
К.
Kise,
Y. Matsui, Mitsubishi Electric
Corp. (Japan)
iv/
SPIE
Vol.
2194
231
Soft x-ray output from the spherical pinch plasma radiation source (SPX
11)
for
microlithography applications
[2194-22]
J. Chen, E. Panarella, B. Hilko, H. Chen, Advanced Laser and Fusion Technology, Inc. (Canada)
240
Application and experimental verification of finite element modeling of friction effects for
x-ray lithography mask mounts
[2194-23]
H. T. H. Chen, M. E.
Hansen,
R. L.
Engelstad, Univ.
of Wisconsin/Madison;
W. A.
Johnson,
Motorola
249
Interferometrie
investigation of x-ray mask fabrication distortions
[2194-44]
M. E.
Hansen,
R. L.
Engelstad,
M. T, Reilly, F. T.
Moore, Univ. of Wisconsin/Madison
255
High-sensitivity x-ray mask damage studies employing holographic gratings and phase-shifting
interferometry
[2194-45]
M. E.
Hansen, F. Cerrina, Univ.
of Wisconsin/Madison
SESSION 3 ELECTON-BEAM
LITHOGRAPHY
262
Miniature electron microscopes for lithography
[2194-26]
A. D. Feinerman, D. A. Crewe, D.-C. Perng, Univ. of Illinois/Chicago; C. A. Spindt,
P. R. Schwoebel, SRI International; A. V. Crewe, Univ. of Chicago
274
Pulsed electron-beam source for high-resolution high-throughput microlithography
[2194-27]
T.-Y. Hsu, P. Hadizad, R. L.
Liou,
С.
Roth,
M. A. Cundersen, Univ.
of
Southern
California
281
Techniques
for determination of the absorbed energy density function in electron-beam
lithography
[2194-28]
S.
V. Babin,
Physics and Technology Institute (Russia)
287
Very simple data processing system for deep
submicron nanofabrication
[2194-29]
S. Shy,
T. F. Lei, C
H. Chu,
C. Y.
Chang, National
Nano
Device Lab. (Taiwan);
S. H.
Lee,
W. A. Loong, National Chiao Tung Univ. (Taiwan)
SESSION
4
ELECTRON-BEAM LITHOGRAPHY: PROXIMITY EFFECTS
298
Rule-based approach to
е
-beam and process-induced proximity effect correction for
phase-shifting mask fabrication
[2194-30]
C. Pierrat, J. G. Garofalo, J.
DeMarco,
S.
Vaidya, AT&T Bell Labs.; O. W. Otto, Trans Vector
Technologies Inc.
310
Proximity correction of high-dosed frame with PROXECCO
[2194-31 ]
H.
Eisenmann,
T.
Waas,
aiss GmbH (FRG);
H. Hartmann,
Fraunhofer-Institute
for Solid State
Technology (FRG)
318
Direct inclusion of the proximity effect in the calculation of kinoforms
[2194-32]
J.
Bengtsson,
Chalmers Univ. of Technology (Sweden)
323
Improved proximity correction algorithm for electron-beam lithography
[2194-33]
W. Lu,
Southeast Univ. (China);
H. Y.
Shen, Nanjing Electronic Device Institute (China);
J. X. Tao,
N.
Gu, Y.
Wei, Southeast Univ. (China)
SPIE
Vol.
2194
/v
SESSION 5
RESISTS FOR MANUFACTURING
332
Chemically amplified negative resist for
е
-beam fabrication of x-ray masks
[2194-34]
A. D. Katnani, J. M. Rocque, R. W. Kwong, D. Puisto, D. K. Bailey, IBM Corp.
344
Dry-etch characteristics of chemically amplified and onium-salt-sensitized electron-beam
resists
[2194-35]
S. E. Huq, P. D. Prewett, Rutherford
Appleton Lab.
(UK)
355
Vertical lithography: controlling resist profiles in optical lithography with a large area electron
beam
[2194-36]
W. R. Livesay, Electron Vision Corp.
366
Submicron
е
-beam lithography process using an overcoating conducting polymer for the
reduction of beam charging effects on lithium
niobáte
and quartz
[2194-37]
C. D.
Konclek,
L. C. Poli,
Army
Research
Lab.
375
Characterization of safe solvent PMMA resist variables for electron-beam application
[2194-38]
B. W. Smith, T. D. Eakin, Rochester Institute of Technology; D. W. Johnson, Microlithography
Chemical Corp.
SESSION
6
lON-tEAM LITHOGRAPHY
___________________________
384
Ion
protection:
Ле
ѕиссе»ѕог
to optical Hthography
[2194-40]
H.
Löschner,
G.
Stengl,
lon
Microfabricatîon
Systems GmbH (Austria); I. L. Berry,
Microelectronics Research Lab.;],
N.
Randall, Texas Instruments Inc.;]. C. Wolfe, Univ. of
Houston; W. Finkelstein, R. W. Hill, Advanced Lithography Croup; j. Melngailis, Univ. of
Maryland/College Park; L. R. Harriott, AT&T Bell Labs.; W.
Brünger,
L. M.
Buchmann,
Fraunhofer-Institut für Silizium Technology (FRG)
394
Advances in focused ion-beam repair of opaque defects
[219441]
D.
С
Ferranti,
].
С.
Morgan,
W.
В.
Thompson, Micrion
Соф.;
W.
С.
Joyce, SEMATECH
407
Recent progress in gas field ion source technology
[2194-42]
С
Wilbertz, T. Miller, S. Kalbitzer,
Max-Pianck-Institut für Kernphysik (FRG)
418
Addendum
419
Author Index
|
any_adam_object | 1 |
building | Verbundindex |
bvnumber | BV010738483 |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874 |
callnumber-search | TK7874 |
callnumber-sort | TK 47874 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_tum | ELT 285f |
ctrlnum | (OCoLC)30614005 (DE-599)BVBBV010738483 |
dewey-full | 621.3815/31 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/31 |
dewey-search | 621.3815/31 |
dewey-sort | 3621.3815 231 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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genre | (DE-588)1071861417 Konferenzschrift 1994 San Jose Calif. gnd-content |
genre_facet | Konferenzschrift 1994 San Jose Calif. |
id | DE-604.BV010738483 |
illustrated | Not Illustrated |
indexdate | 2024-07-09T17:58:02Z |
institution | BVB |
isbn | 0819414891 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007169997 |
oclc_num | 30614005 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | IX, 420 S.: Ill. u. graph. Darst. |
publishDate | 1994 |
publishDateSearch | 1994 |
publishDateSort | 1994 |
publisher | SPIE-The International Society for Optical Engineering |
record_format | marc |
series | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
series2 | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
spelling | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. David O. Patterson, chair/ed. Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing IV Bellingham, Wash. SPIE-The International Society for Optical Engineering 1994 IX, 420 S.: Ill. u. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 2194 Ion beam lithography Congresses Lithography, Electron beam Congresses Masks (Electronics) Congresses Semiconductors Etching Congresses X-ray lithography Congresses Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 San Jose Calif. gnd-content Fotolithografie Halbleitertechnologie (DE-588)4174516-4 s DE-604 Patterson, David O. Sonstige oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 2194 (DE-604)BV000010887 2194 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007169997&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Ion beam lithography Congresses Lithography, Electron beam Congresses Masks (Electronics) Congresses Semiconductors Etching Congresses X-ray lithography Congresses Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd |
subject_GND | (DE-588)4174516-4 (DE-588)1071861417 |
title | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. |
title_alt | Electron-beam, x-ray, and ion-beam submicrometer lithographies for manufacturing IV |
title_auth | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. |
title_exact_search | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. |
title_full | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. David O. Patterson, chair/ed. |
title_fullStr | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. David O. Patterson, chair/ed. |
title_full_unstemmed | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV 28 February - 1 March 1994, San Jose, Calif. David O. Patterson, chair/ed. |
title_short | Electron beam, x-ray, and ion beam submicrometer lithographies for manufacturing IV |
title_sort | electron beam x ray and ion beam submicrometer lithographies for manufacturing iv 28 february 1 march 1994 san jose calif |
title_sub | 28 February - 1 March 1994, San Jose, Calif. |
topic | Ion beam lithography Congresses Lithography, Electron beam Congresses Masks (Electronics) Congresses Semiconductors Etching Congresses X-ray lithography Congresses Fotolithografie Halbleitertechnologie (DE-588)4174516-4 gnd |
topic_facet | Ion beam lithography Congresses Lithography, Electron beam Congresses Masks (Electronics) Congresses Semiconductors Etching Congresses X-ray lithography Congresses Fotolithografie Halbleitertechnologie Konferenzschrift 1994 San Jose Calif. |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007169997&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV000010887 |
work_keys_str_mv | AT pattersondavido electronbeamxrayandionbeamsubmicrometerlithographiesformanufacturingiv28february1march1994sanjosecalif AT pattersondavido electronbeamxrayandionbeamsubmicrometerlithographiesformanufacturingiv |