This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silico...

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Bibliographic Details

Format:	Book
Language:	English
Published:	Cambridge [u.a.] Cambridge Univ. Press 1996
Edition:	1. publ.
Subjects:	Field-effect transistors Molecular beam epitaxy Semiconductor doping Semiconductors > Design and construction Feldeffekttransistor Halbleiter Halbleitertechnologie Deltadotierung Molekularstrahlepitaxie
Summary:	This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silicon very large scale integrated circuits, discrete devices, and optoelectronic devices After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The optical, electrical, chemical, and structural techniques for characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles The latter part of the book deals with particular devices, such as silicon field-effect transistors, and III-V structures for electronic and optoelectronic applications. The book will be of considerable interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering
Physical Description:	XII, 604 S. Ill., graph. Darst.
ISBN:	0521482887