Delta-doping of semiconductors:
This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silico...
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Cambridge [u.a.]
Cambridge Univ. Press
1996
|
| Ausgabe: | 1. publ. |
| Schlagworte: | |
| Zusammenfassung: | This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silicon very large scale integrated circuits, discrete devices, and optoelectronic devices After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The optical, electrical, chemical, and structural techniques for characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles The latter part of the book deals with particular devices, such as silicon field-effect transistors, and III-V structures for electronic and optoelectronic applications. The book will be of considerable interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering |
| Beschreibung: | XII, 604 S. Ill., graph. Darst. |
| ISBN: | 0521482887 |
Internformat
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| 520 | 3 | |a This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silicon very large scale integrated circuits, discrete devices, and optoelectronic devices | |
| 520 | |a After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The optical, electrical, chemical, and structural techniques for characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles | ||
| 520 | |a The latter part of the book deals with particular devices, such as silicon field-effect transistors, and III-V structures for electronic and optoelectronic applications. The book will be of considerable interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering | ||
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Datensatz im Suchindex
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| edition | 1. publ. |
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| id | DE-604.BV010668265 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:56:56Z |
| institution | BVB |
| isbn | 0521482887 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007121248 |
| oclc_num | 31815380 |
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| owner_facet | DE-91 DE-BY-TUM DE-355 DE-BY-UBR DE-29T DE-703 |
| physical | XII, 604 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Cambridge Univ. Press |
| record_format | marc |
| spelling | Delta-doping of semiconductors ed. by E. F. Schubert 1. publ. Cambridge [u.a.] Cambridge Univ. Press 1996 XII, 604 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier This book is the first to give a comprehensive review of the theory, fabrication, characterization, and device applications of abrupt, shallow, and narrow doping profiles in semiconductors. Such doping profiles are a key element in the development of modern semiconductor technology, including silicon very large scale integrated circuits, discrete devices, and optoelectronic devices After an introductory chapter setting out the basic theoretical and experimental concepts involved, the fabrication of abrupt and narrow doping profiles by several different techniques, including epitaxial growth, is discussed. The optical, electrical, chemical, and structural techniques for characterizing doping distributions are then presented, followed by several chapters devoted to the inherent physical properties of narrow doping profiles The latter part of the book deals with particular devices, such as silicon field-effect transistors, and III-V structures for electronic and optoelectronic applications. The book will be of considerable interest to graduate students, researchers, and engineers in the fields of semiconductor physics and microelectronic engineering Field-effect transistors Molecular beam epitaxy Semiconductor doping Semiconductors Design and construction Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Deltadotierung (DE-588)4290571-0 gnd rswk-swf Molekularstrahlepitaxie (DE-588)4170399-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Deltadotierung (DE-588)4290571-0 s 1\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 2\p DE-604 Feldeffekttransistor (DE-588)4131472-4 s 3\p DE-604 Molekularstrahlepitaxie (DE-588)4170399-6 s 4\p DE-604 Schubert, E. F. Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Delta-doping of semiconductors Field-effect transistors Molecular beam epitaxy Semiconductor doping Semiconductors Design and construction Feldeffekttransistor (DE-588)4131472-4 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Deltadotierung (DE-588)4290571-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| subject_GND | (DE-588)4131472-4 (DE-588)4022993-2 (DE-588)4158814-9 (DE-588)4290571-0 (DE-588)4170399-6 |
| title | Delta-doping of semiconductors |
| title_auth | Delta-doping of semiconductors |
| title_exact_search | Delta-doping of semiconductors |
| title_full | Delta-doping of semiconductors ed. by E. F. Schubert |
| title_fullStr | Delta-doping of semiconductors ed. by E. F. Schubert |
| title_full_unstemmed | Delta-doping of semiconductors ed. by E. F. Schubert |
| title_short | Delta-doping of semiconductors |
| title_sort | delta doping of semiconductors |
| topic | Field-effect transistors Molecular beam epitaxy Semiconductor doping Semiconductors Design and construction Feldeffekttransistor (DE-588)4131472-4 gnd Halbleiter (DE-588)4022993-2 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Deltadotierung (DE-588)4290571-0 gnd Molekularstrahlepitaxie (DE-588)4170399-6 gnd |
| topic_facet | Field-effect transistors Molecular beam epitaxy Semiconductor doping Semiconductors Design and construction Feldeffekttransistor Halbleiter Halbleitertechnologie Deltadotierung Molekularstrahlepitaxie |
| work_keys_str_mv | AT schubertef deltadopingofsemiconductors |