Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Pennington, NJ
Electrochemical Soc.
1994
|
| Schriftenreihe: | Electrochemical Society: Proceedings
1994,11 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XI, 483 S. Ill., graph. Darst. |
| ISBN: | 1566770432 |
Internformat
MARC
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| 111 | 2 | |a International Symposium on Silicon-On-Insulator Technology and Devices |n 6 |d 1994 |c San Francisco, Calif. |j Verfasser |0 (DE-588)1402148-1 |4 aut | |
| 245 | 1 | 0 | |a Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices |c ed.: Sorin Cristoloveanu |
| 246 | 1 | 3 | |a Silicon-on-insulator technology and devices |
| 264 | 1 | |a Pennington, NJ |b Electrochemical Soc. |c 1994 | |
| 300 | |a XI, 483 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Electrochemical Society: Proceedings |v 1994,11 | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 7 | |a Technologie silicium sur isolant |2 ram | |
| 650 | 7 | |a Électronique - Matériaux |2 ram | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 4 | |a Silicon-on-insulator technology |v Congresses | |
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Datensatz im Suchindex
| _version_ | 1804125121533706240 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
PARTI
SOI MATERIALS
-
SYNTHESIS AND DEFECTS
Abstract Page
No No
Preface
iii
Parti
1
Introductory Remarks
-
К.
Izumi
3
Thirty years of silicoii-on-insulators
:
do trends emerge
? 507 5
G.W. Cullen, M.T. Duffy,
A.C.
Ipri (Invited Lecture)
Mechanisms of
SIMOX
synthesis
524 16
and related
microstructural
properties
J. Stoemenos, B.
Aspar,
J. Margail
(Invited Lecture)
Heavy metal
gettering
in
SIMOX
wafers
539 28
J.
Jabłoński,
Y. Miyamura, M. Imai, H. Tsuya
(Invited Lecture)
Defects induced by heavy-metal on bonded SOI wafer surfaces
516 ■ 38
K. Okonogi, H. Kikuchi, K.
Arai
Synthesis of a buried oxide in related Sio.sGeo.s material
518 44
using high energy oxygen implantation
J.P. Zhang, P.L.F. Hemment, S.M. Newstead
AR.
Powell,
Т.Е.
Whall,
Е.ЊС.
Parker
Delineation of crystallographic defects in ultra thin
SIMOX
materials
531 50
produced by low energy low dose oxygen implantation
L.F. Giiles,
N.
Meyyappan, A. Nejim, J. Blake
F.
Cristiano, P.L.F.
Hemment
Experimental study of structure formation in ion beam
540 57
synthesized buried layers
R. Weber,
W. Skorupa
Ultra thin buried oxide layers formed by low dose
SIMOX
processes
541 62
B.
Aspar,
С.
Pudda, A.M. Papon
AJ.
Auberton-Hervé,
J.M. Lamure
The effect of mechanical stresses on oxygen precipitation processes
542 70
during formation of the SOI-structures
V.G. Litovchenko, B.N. Romanyuk, V.P. Melnik
ML Klyui, G.Ph.
Romanova,
A.A.
Efremov
Abstract Page
No No
Effect of implantation conditions on defect microstnicture
543 82
in annealed
SIMOX
J.D. Lee, J.C. Park, S.J.
Krause,
D.
Venables,
P. Roitman
Effect of nitrogen ambients during high temperature
544 92
SIMOX
annealing
P. Roitman, S. Mayo, D. Simons, S.J.
Krause, D.
Venables
J.C.
Park,
J.D. Lee,
P.
Lenahan,
J.
Conley
Nuclcation of oxidation induced stacking faults (OISF)
545 98
in ion implanted
SIMOX
structures
L.F. Giles, A. Nejim, F.
Cristiano,
P.L.F. Hemment
Investigation of defects and mechanical stresses distribution
546 104
in SOI-structures formed by combined ion implantation
N.I. Klyui, V.G. Litovchenko, B.N. Romanyuk, V.P. Melnik
P+ removal techniques for thin-film BESOI
566
111
C.A. Desmond, C.E. Hunt,
S.D.
Coffins
SiC SOI structures by direct carbonization conversion
565 117
and direct growth from silacyclobutame
A.J. Steckl,
С
Yuan, Q.Y.
Tong,
U.
Gösele, M.J.
Loboda
Formation and characterization of double
SIMOX
structures
527 123
by sequential high and low energy oxygen implantation into silicon
N.
Hatzopoulos,
D.I.
Siapkas, P.L.F. Hemment,
W. Skorupa
PART
Π
MATERIAL CHARACTERIZATION
Part
Π
129
Introductory Remarks
-
P.L.F. Hemment
131
A review of characterization methods for SOI substrates
511 133
H.J. Hovel (Invited Lecture)
On the optical characterization of
SIMOX
materials
512 148
J.
Macia,
T.
Jawhari, A. Perez-Rodriguez, J.R.
Morante
Measurements of silicon film and buried oxide thickness
513 154
in SOI wafers by a contactless s-polarized reflectance technique
Y. S. Chang,
S.S.
Li
Structural characterization by RBS and
ТЕМ
of SiC buried layers
514 167
formed by ion beam synthesis at high temperature
A. Nejim, P.L.F. Hemment, J. Stoemenos
vi
Abstract Page
No No
Refractive index and compositional depth profiles in high energy
S
15 173
SIMOX
structures
N.
Hatzopoulos,
D.I.
Siapkas,
C.C.
Katsidis,
T.
Zorba,
P.L.F. Hemment
Electroluminescence
analysis of the screen oxide
SIMOX
structure
517 179
S.
Bota, A. Pérez-Rodriguez, J.R.
Morante,
A
Baraban,
P.P. Konorov
Depth micro-Raman profiles of SOI-SIMOX and bonded Si wafers
525 185
E. Martin,
A. Pérez-Rodriguez, J.
Jimenez, J.R.
Morante
Surface morphology of SDMOX-Si layers characterized
526 191
using atomic force microscopy
M. Nagase, T. Ishiyama, K.
Murase
Similarities between separation by implanted oxygen
528 197
and bonded and etchback silicon-on-insulator materials as
revealed by electron spin resonance
K. Vanheusden, A. Stesmans
Micro-Raman analysis of ZMR SOI materials
529 203
A. Torres, E. Martin,
A. Pérez-Rodríguez,
J.
Jimenez, J.R.
Morante
Rdaxabie, slow charge trapping
530 209
on silicon-on-insulator
(SOI)
mesa sidewalls
P.C.
Karulkar
Structure and electrical characteristics
534 224
of a thin buried oxide containing silicon inclusions
L.
Meda,
S.
Bertoni,
G.F. Cerofolini,
С.
Spaggiari,
H.
Gassei
Electrical characterization of the interface between buried oxide
536 230
and silicon substrate
P. Dimitrakis, G.J. Papaioannou, S. Cristoloveanu
С
-V
and thermally activated investigation
538 236
of ZMR SOI
meza
structures
AN. Nazarov, V.S. Lysenko, V.A Gusev,
V.l.
Kilchitskaya
Charge carrier injection into the buried oxide of wafer bonded
559 245
silicon-on-insulator materials
S.
Bengtsson,
P. Ericsson, K. Mitani, T. Abe
Charge trapping in BOX layers of
SIMOX
structures
560 253
covered with epitaxial silicon
S.I. Fedoseenko, V.V. Afanas ev,
AG. Revesz
PART UI
SOI TRANSISTORS
:
PHYSICS, CHARACTERIZATION AND RELIABILITY
Abstract Page
No No
Partul
259
Introductory Remarks
-
S. Cristoloveanu
261
Physical and electrical properties of fully-depleted
SOI
devices
532 263
J.L. Pelloie, Y.S. Sun (Invited Lecture)
The floating body in SOI
519 278
J.B. McKitterick (Invited Lecture)
The use of body ties in cryogenic SOI CMOS
520 290
E. Simoen,
С
Claeys
Analysis and modeling of self-heating effects
521 296
in thin-film SOI MOSFET s as a function of temperature
J, Jomaah, F.
Balestra,
G. Ghibaudo
Evolution of self-heating effects on current
522 304
and future SOI technologies
D. Yachou, J.
Gautier
Influence of oxygen implant dose on front and back channel
533 312
characteristics of MOSFET s fabricated in single
and double-implant
SIMOX
substrates
A. Yoshino, T. P. Ma, K. Okumura
The potential and restrictions of the double derivative method
535 318
for threshold voltage extraction in SOI MOSFET s
E. Simoen, E. Vandamme, A.L.P.
Rotondare»,
С.
Claeys
Properties of SOI MOSFET s obtained on multilayer
537 324
buried dielectrics
V.S. Lysenko,
A.N.
Nazarov,
Т.Е.
Rudenko
A.N.
Rudenko,
V.l.
Kilehitskaya, E.I. Givargizov,
A.B.
Limanov
Hot electron lifetime of
0.8
uni
CMOS transistors
554 333
fabricated in
SIMOX
W.C.
Jenkins, S.T. Liu
Effect ofLDD overlap on transistor self latch-up
555 339
and on
bot
carrier degradation
F.T. Brady, S.P. Sinha, N.F. Haddad,
D.E.
loannou
Opposite-channel-based hot-carrier injection in SOI MOSFET s
556 345
A. Zateski,
D.E.
loannou, G.J.
Campisi, H.L.
Hughes
Degradation and relaxation of the buried oxide
557 351
in SEMOX-MOSFETs
A. Karmám,
G.
Reimbold,
S. Cristoloveanu
vm
Abstract Page
No No
Improvement of
SIMOX
buried oxide breakdown voltage
558 357
by multiple step and multiple energy implantation
H. Gassel, H.
Vogt
Behaviour of buried oxides in SOI-SIMOX transistors
561 367
under ionizing radiation
V. Berland, A. Touboul, O. Flament
Mrad(Si) irradiation effects in Gate-Ail-Around
562 375
Silicon-On-Insulator n-MOSFET s
E. Simoen, U.
Magnusson,
I. Born, J. Vlummens, C. Claeys
S. Coenen, M. Decreton
Effect of supplemental dose in
SIMOX
563 381
on very high ionizing dose response
O. Flament, P. Paillet, J.L. Leray, B.
Aspar,
В.
Giffard,
AJ. Auberton-Hervé
Post-irradiation evolution of SOI-SIMOX
MOS
564 390
transistors parameters
V. Berland, A. Touboul, O. Flament
PART IV
DEVICES, CIRCUITS AND APPLICATIONS
Abstract Page
No No
Part
IV 397
Introductory Remarks
-
H. Hosack
399
Present status and potential of subquarter-micron
509 401
ultra-thin-film CMOS/SIMOX technology
T. Tsuchiya, T. Ohno, Y.
Kado
(Invited Lecture)
Requirements for TFSOI materials and their effects on devices
510 413
from a user s perspective
S.R. Wilson, B.Y. Hwang, J. Foerstner, T. Wetteroth
M. Racanelii, J. Tsao, M. Huang (Invited Lecture)
Projection of SOI for low power applications
547 425
T.W. Houston, A.Y. Yee (Invited Lecture)
Advantages and potential of SOI structures for smart sensors
508 430
H.
Vogt
(Invited Lecture)
Abstract
Page
No No
SOI for mainstream VLSI
-
Another look at the economic incentive
553 441
T. Stanley (Invited Lecture)
Device/Circuit modeling and simulation applied to design
548 447
of Deep-Submicron SOI CMOS technology
J.G. Fossum,
P.C.
Yeh, D.
Suh, S. Kristom
Architectures comparison for ultra-thin fully-depleted
549 453
submicron SOI
MOSFET s
O. Faynot, B. Giffard,
С
Raynaud, J.
Gautier
Implications of thin buried-oxide for
SIMOX
circuit performance
550 459
M.
Alles,
W.
Krull,
L.
Allen
A self-aligned cobalt
suicide
Т
-gate process and its application
551 465
to SOI microwave MOSFET s
A.L.
Caviglia,
A.A.
ffiadis, L.J. West
Low access resistance ultra-thin SOI MOSFET s
552 471
with a GOLD structure
B. Giffard, O. Faynot
AUTHOR INDEX
477
SUBJECT INDEX
481
|
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| genre | (DE-588)1071861417 Konferenzschrift 1994 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1994 San Francisco Calif. |
| id | DE-604.BV010645369 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:56:31Z |
| institution | BVB |
| institution_GND | (DE-588)1402148-1 |
| isbn | 1566770432 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007103408 |
| oclc_num | 30842023 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XI, 483 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| publisher | Electrochemical Soc. |
| record_format | marc |
| series | Electrochemical Society: Proceedings |
| series2 | Electrochemical Society: Proceedings |
| spelling | International Symposium on Silicon-On-Insulator Technology and Devices 6 1994 San Francisco, Calif. Verfasser (DE-588)1402148-1 aut Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices ed.: Sorin Cristoloveanu Silicon-on-insulator technology and devices Pennington, NJ Electrochemical Soc. 1994 XI, 483 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electrochemical Society: Proceedings 1994,11 Semiconducteurs ram Technologie silicium sur isolant ram Électronique - Matériaux ram Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik (DE-588)4128029-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1994 San Francisco Calif. gnd-content SOI-Technik (DE-588)4128029-5 s DE-604 Cristoloveanu, Sorin Sonstige oth Electrochemical Society: Proceedings 1994,11 (DE-604)BV001900941 1994,11 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007103408&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices Electrochemical Society: Proceedings Semiconducteurs ram Technologie silicium sur isolant ram Électronique - Matériaux ram Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik (DE-588)4128029-5 gnd |
| subject_GND | (DE-588)4128029-5 (DE-588)1071861417 |
| title | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices |
| title_alt | Silicon-on-insulator technology and devices |
| title_auth | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices |
| title_exact_search | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices |
| title_full | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices ed.: Sorin Cristoloveanu |
| title_fullStr | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices ed.: Sorin Cristoloveanu |
| title_full_unstemmed | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices ed.: Sorin Cristoloveanu |
| title_short | Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices |
| title_sort | proceedings of the sixth international symposium on silicon on insulator technology and devices |
| topic | Semiconducteurs ram Technologie silicium sur isolant ram Électronique - Matériaux ram Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik (DE-588)4128029-5 gnd |
| topic_facet | Semiconducteurs Technologie silicium sur isolant Électronique - Matériaux Semiconductors Congresses Silicon-on-insulator technology Congresses SOI-Technik Konferenzschrift 1994 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007103408&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001900941 |
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