Narrow gap semiconductors 1995: proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995
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Format: | Tagungsbericht Buch |
Sprache: | English |
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Bristol [u.a.]
Inst. of Physics Publ.
1995
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Schriftenreihe: | Institute of Physics <London>: Institute of Physics conference series
144 |
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Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | X, 388 S. graph. Darst. |
ISBN: | 0750303417 |
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adam_text | NARROW GAP SEMICONDUCTORS 1995 PROCEEDINGS OF THE SEVENTH INTERNATIONAL
CONFERENCE ON NARROW GAP SEMICONDUCTORS, SANTA FE, NEW MEXICO, 8-12
JANUARY 1995 EDITED BY J L RENO INSTITUTE OF PHYSICS CONFERENCE SERIES
NUMBER 144 INSTITUTE OF PHYSICS PUBLISHING, BRISTOL AND PHILADELPHIA
CONTENTS PREFACE XI ORGANIZING COMMITTEE XII CHAPTER 1: INFRARED LASERS
AND EMITTERS GASB-BASED SEMICONDUCTOR LASERS IN THE 4 /** BAND H * CHOI,
G W TURNER AND H Q LE 1 300 * LIGHT EMITTING DEVICES FOR THE 3-10 SSM
BAND FROM ARSENIC RICH INASFLNASJSBI-JC STRAINED-LAYER SUPERLATTICES M J
PULLIN, PJP TANG, S J CHUNG, * * PHILLIPS, R A STRADLING, A G NORMAN, Y
* LI AND L HART 8 INTERFACES IN INASSB/INGAAS STRAINED-LAYER
SUPERLATTICES GROWN BY MOCVD FOR USE IN INFRARED EMITTERS R M BIEFELD, D
M FOLLSTAEDT, S R KURTZ AND * * ****** 13 HETEROSTRUCTURES AND INFRARED
EMITTERS WITH COMPRESSED INASSB LAYERS S R KURTZ AND R M BIEFELD 18
HIGH-POWER DIODE LASER-PUMPED MIDWAVE INFRARED HGCDTE/CDZNTE QUANTUM
WELL LASERS H Q LE, A SANCHEZ, J M ARIAS, M ZANDIAN, R R ZUCCA AND Y-Z
LIU 24 3-4 /AM LASER DIODES BASED ON GALNSB/INAS SUPERLATTICES R H
MILES, D H CHOW, T * HASENBERG, A R KOST AND Y-H ZHANG 31 MID INFRARED
LASERS GROWN ON INAS BY MODULATED-MOLECULAR-BEAM EPITAXY Y-H ZHANG,
HQLE.DH CHOW AND R H MILES 36 CHAPTER 2: II-VI CHARACTERIZATION
LUMINESCENCE AND OPTICAL GAIN FROM FREE, LOCALIZED AND CONFINED EXCITONS
IN NARROW-GAP HGO.7CDO.3TE J W TOMM, T KELZ, W HOERSTEL, T * TRAN, * *
WAGNER, R G BENZ II AND * J SUMMERS 41 INVESTIGATION OF IMPURITY/DEFECT
LEVEL IN HGI_ X CD X TE ALLOYS USING INFRARED MAGNETO-PHOTOCONDUCTIVITY
P L LIU, WLU,XF LU, H M GONG, X N **, Y M MU, J H CHU AND S * SHEN 46
MAGNETOPHONON OSCILLATIONS IN THE LONGITUDINAL MAGNETOTHERMAL EMF OF
NARROW GAP HGI^CD^TE J BAARS, * L LITTLER, D BRINK AND M BRUDER 50 VI
OPTICAL PROPERTIES AND INTERDIFFUSION OF (001) HGTE/HGI^CD^TE
SUPERLATTICES F GOSCHENHOFER, V LATUSSEK, S EINFELDT, M * MOELLER, * R
BECKER AND G LANDWEHR 55 EFFECT OF HG PRESSURE ON THE DIFFUSION OF HG IN
CDTE M U AHMED, E D JONES, J * MULLIN AND N M STEWART 60 STUDIES ON THE
PRESSURE-DEPENDENCY OF THE DIFFUSION OF IODINE INTO CDTE E D JONES, J
MALZBENDER, N SHAW AND J * MULLIN 6 5 THE STUDY OF MERCURY VACANCIES IN
HG^CDJTE FROM CAPACITANCE AND PHOTOLUMINESCENCE SPECTROSCOPY Y CHANG, J
H CHU, W G TANG, S GUO AND D TANG 70 TRANSFORMATION OF THE
PHOTOLUMINESCENCE PROPERTIES OF HGJ_^MN^TE FOR CHANGING SIGN OF THE
G-FACTOR YI MAZUR, G G TARASOV AND J W TOMM 75 CARS AND FARADAY EFFECT
IN NARROW GAP HGCDMNTE W HERBST, H PASCHER, F GEIST, M BARAN, T DIETL, W
DOBROWOLSKI AND R SZYMCZAK 80 GALVANOMAGNETIC PROPERTIES OF (CDI_^_
,ZN X MNJ,)3AS2 R LAIHO, * G LISUNOV, V N STAMOV AND V S ZAHVALINSKII 85
OPTICAL AND PHOTOELECTRICAL PROPERTIES OF /6-FESI 2 THIN FILMS W Z SHEN,
S * SHEN, W G TANG AND L W WANG 90 INFLUENCE OF MERCURY PRESSURE ON
COMPOSITION PROFILE OF LPE HGI-^CD^TE * LI, J H CHU, X Q CHEN, J Y CAO
AND D Y TANG 95 ELECTRONIC AND MAGNETIC PROPERTIES OF DILUTED MAGNETIC
SEMICONDUCTOR HGI-JMN^TEI^SE^ Y A KULBACHINSKII, P D MARYDNCHUK, IA
CHURILOV, M INOUE, M SASAKI, H NEGISHI ANDYHARA 100 OPTICAL TRANSMISSION
AND INFRARED PHOTOLUMINESCENCE OF HG - X -YCA X MN Y SE SINGLE CRYSTALS
YI MAZUR, G G TARASOV, S R LAVORIC, J W TOMM AND H KISSEL 10 5 NEW
PHOTOLUMINESCENCE PECULIARITIES IN MN-ENRICHED HG]_ X CD X TE SINGLE
CRYSTALS YI MAZUR, G G TARASOV AND J W TOMM 110 MEASUREMENT OF SURFACE
RECOMBINATION VELOCITY IN HGCDTE BY USING PHOTOCONDUCTIVE DECAY METHOD Y
* CHUNG, J * HONG, S * LEE, * 1 CHANG, S U KIM, M J PARK AND J M KIM 115
EFFECT OF THE DISTRIBUTION OF PHOTOGENERATED CARRIER ON HGCDTE
PHOTOCONDUCTIVITY Y GUI, J H CHU AND L GUI 120 CHAPTER 3: IV-VI
MATERIALS THE STUDY OF A RESONANT CR DONOR IN PBTE, PBSE, PBTEI-YSEY AND
PBI_ X SN^TE E GRODZICKA, W DOBROWOLSKI, T STORY, Z WILAMOWSKI AND *
WITKOWSKA 125 VLL ANOMALOUS TRANSPORT PROPERTIES OF SNJ-^GD^TE W
DOBROWOLSKI, E GRODZICKA, T STORY, Z GOLACKI AND R R GALAZKA 130
STIMULATED EMISSION IN MULTI-VALLEY LEAD SALTS WITH STAR DEGENERACY
LIFTED BY STRAIN AND MAGNETIC FIELDS J W TOMM, * H HERRMANN, M MOCKER, T
KELZ, T ELSAESSER, R KLANN, * V NOVIKOV, V G TALALAEV, V E TUDOROVSKII
AND H BOETTNER 135 FARADAY EFFECT IN EPITAXIAL FILMS OF IV-VI
SEMICONDUCTORS IV HERBST, H PASCHER AND G BAUER 14 0 BAND AND EXCHANGE
PARAMETERS OF PBI_ X EU X TE F GEIST, H PASCHER, G SPRINGHOLZ AND G
BAUER 145 FTIR CHARACTERIZATION OF IV-VI SEMICONDUCTORS GROWN BY LPE ON
(100) BAF 2 P J MCCANN, L LI, S YUAN AND J E FURNEAUX 150
MAGNETOTRANSPORT IN PBTE NIPI STRUCTURES J OSWALD, M PIPPAN, G HEIGL, G
SPAN AND T STELLBERGER 155 EPITAXY OF IV-VI MATERIALS ON SI WITH
FLUORIDE BUFFERS AND FABRICATION OF IR-SENSOR ARRAYS H ZOGG, A FACH, J
JOHN, J MASEK, P MUELLER AND * PAGLINO 160 MONOLAYER SHORT PERIOD
SUPERLATTICES OF NARROW GAP PBTE AND ANTIFERROMAGNETIC WIDE BAND GAP
EUTE G SPRINGHOLZ, J J CHEN, N FRANK, Y UETA, G MARSCHNER, * PICHLER, G
BAUER, M S DRESSELHAUS, G DRESSELHAUS, T M GIEBULTOWICZ, V NUNEZ AND L
SALAMANCA-RIBA 167 MAGNETOREFLECTIVITY STUDY OF ELECTRON-LO PHONON
INTERACTION IN PBI_ X EU X TE AND PBTE/PBI-JEUJTE MULTI-QUANTUM WELLS S
YUAN, H KRENN, G SPRINGHOLZ, G BAUER AND P J MCCANN 173 MANY-PARTICLE
EFFECTS IN MAGNETO-PHOTOLUMINESCENCE FROM EPITAXIAL FILMS OF NARROW GAP
IV-VI SEMICONDUCTORS R RUPPRECHT AND H PASCHER 179 UPPER AND LOWER
VALENCE BAND ENERGY SPECTRA OF NARROW GAP SEMICONDUCTOR SOLID SOLUTIONS
OF BI 2 _ X SN X TE3 CRYSTALS V A KULBACHINSKII, M INOUE, M SASAKI, H
NEGISHI, W X GAO, Y GIMAN, P LOSTAK AND J HORAK 184 IV-VI MISFIT
DISLOCATION SUPERLATTICES AS ZERO-DIMENSIONAL QUANTUM BOXES * A MIRONOV,
A I FEDORENKO, A Y SIPATOV, * H HERRMANN, J W TOMM AND VILITVINOV 189
CHAPTER 4: III-V GROWTH AND ORDERING RHEED AND XPS STUDY OF OXIDE
DESORPTION FROM INSB(100) SUBSTRATES W * LIU AND M * SANTOS 194 VLLL
RHEED STUDIES OF THE SURFACE RECONSTRUCTIONS OF INSB(OOL) DURING
MOLECULAR BEAM EPITAXY M * SANTOS AND W * LIU 199 LOW TEMPERATURE,
DAMAGE-FREE SURFACE CLEANING OF INSB(OOL) PRIOR TO MBE GROWTH A D
JOHNSON, G M WILLIAMS, A J PIDDUCK, * R WHITEHOUSE, T MARTIN, * *
ELLIOTT AND T ASHLEY 204 THE GROWTH OF TERNARY SUBSTRATES OF INDIUM
GALLIUM ANTIMONIDE BY THE DOUBLE CRUCIBLE CZOCHRALSKI TECHNIQUE T
ASHLEY, J A BESWICK, * COCKAYNE AND * * ELLIOTT 209 SLAB-DOPING OF
INSB:ER J P HEREMANS, D L PARTIN AND * * THRUSH 214 OPTICAL AND
STRUCTURAL CHARACTERISATION OF INAS/GASB SUPERLATTICES F FUCHS, J
SCHMITZ, N HERRES, J WAGNER, J D RALSTON AND P KOIDL 21 9 ORDERING AND
BANDGAP REDUCTION IN INASI_JSB X ALLOYS D M FOLLSTAEDT, R M BIEFELD, S R
KURTZ, L R DAWSON AND * * ****** 224 REMOTE DOPING OF INAS/GASB QUANTUM
WELLS BY MEANS OF A SECOND INAS WELL DOPED WITH SILICON ** MALIK, S J
CHUNG, R A STRADLING, W T YUEN, J J HARRIS AND A G NORMAN 229
METALORGANIC VAPOR PHASE EPITAXY OF INSB IN A MULTIWAFER REACTOR R
ROLPH, T ZIELINSKI, E WOELK AND H JIIRGENSEN 234 CHAPTER 5: II-VI GROWTH
PROPERTIES OF HGI-^CD^TE GROWN ON CDZNTE AND SI SUBSTRATE S SIVANANTHAN,
Y P CHEN, P S WIJEWARNASURIYA, J P FAURIE, F T SMITH AND PWNORTON 239
MOLECULAR BEAM EPITAXY GROWTH AND CHARACTERIZATION OF HGI_^MG X TE 5
OEHLING, U LUNZ, H HEINKE, G PLAHL, * R BECKER AND G LANDWEHR 245 NEW
HGCDTE VPE STRUCTURES ON SAPPHIRE BY USING HYBRID SUBSTRATES S BERNARDI
AND F CAMPANELLA 250 ISOTHERMAL VAPOUR PHASE EPITAXIAL GROWTH OF
LARGE-AREA HGCDTE FILM ON LATTICE-MATCHED CDZNTE SUBSTRATE T S LEE, Y T
JEOUNG, H * KIM, J M KIM, J M CHANG, 1H PARK, S * LEE, S U KIM AND M J
PARK 256 CHAPTER 6: III-V CHARACTERIZATION AUGER RATES IN MID-IR INASSB
LASER STRUCTURES H P HJALMARSON AND S R KURTZ 26 2 IX PICOSECOND FREE
ELECTRON LASER STUDIES OF AUGER RECOMBINATION IN INSB AND INASSB SYSTEMS
* N MURDIN, * R PIDGEON, D A JAROSZYNSKI, * * PHILLIPS, R A STRADLING, *
M CIESLA, R PRASERES AND * J G M LANGERAK 267 SPIN-CONSERVING AND
SPIN-FLIP TRANSITIONS BETWEEN HYBRID MAGNETO-ELECTRIC SUBBANDS IN
INAS/ALSB QUANTUM WELLS * GAUER, A WIXFORTH, J P KOTTHAUS, M KUBISA, W
ZAWADZKI, * BRAR AND H KROEMER 272 BISTABLE SWITCHING BETWEEN
DISSIPATIVE AND QUANTUM HALL CONDUCTION IN INSB, INGAAS AND GAAS G NA
HTWEI, A LINKE, M THIEDE, * BREITLOW, H SCHERER, F-J AHLERS, L BLIEK, H
KIINZEL AND J BOETTCHER 277 FAR INFRARED FREE ELECTRON AND
IMPURITY-SHIFTED CYCLOTRON RESONANCE IN TE-DOPED GASB R J WAGNER, * R
BENNETT, * V SHANABROOK, J R WATERMAN AND M D GOLDENBERG 282 LONG
WAVELENGTH PHOTORESPONSE OF SHORT PERIOD INAS/GASB SUPERLATTICES M
LAKRIMI, ** VAUGHAN, R J NICHOLAS, N J MASON AND P J WALKER 287 FAR-IR
SPECTROSCOPY OF SEMICONDUCTING AND SEMIMETALLIC INAS/ALJGAI-JSB QUANTUM
WELLS IN HIGH MAGNETIC FIELDS J KONO, * D MCCOMBE, J P CHENG, I HO, W *
MITCHEL AND * * STUTZ 292 FIRST OBSERVATION OF SHARP EXCITONIC
PHOTOLUMINESCENCE FROM HIGH PURITY EPITAXIAL INAS Y LACROIX, S P
WATKINS, * A TRAN AND M L THEWALT 29 7 PIEZORESISTANCE AND LONG TIME
RELAXATION EFFECT IN A TWO DIMENSIONAL HOLE SYSTEM AT A BE-DOPED
GAAS/ALO.SGAO.SAS HETEROJUNCTION UNDER UNIAXIAL STRESS * P HANSEN, V
KRAVCHENKO, J S OLSEN, N MININA AND A SAVIN 302 THE ELECTRONIC STATES OF
A GAAS/ALGAAS FIBONACCI QUASI-PERIODIC SUPERLATTICE H * MAO, WLU,ZH MA,
J M ZHANG, S JIANG AND S * SHEN 307 SUBBAND LANDAU LEVELS FROM THE
MAGNETO-CAPACITANCE SPECTROSCOPIES * LIU, J H CHU, S GUO AND D TANG 312
CHAPTER 7: INFRARED PHOTODETECTORS DEVICE PHYSICS OF QUANTUM WELL
INFRARED PHOTODETECTOR WITH OPTICAL OUTPUT Y RYZHII AND M RYZHII 317
INFRARED PHOTODETECTORS USING CAPACITANCE VARIATION IN INASI-^SB* MIS
DEVICES Y ZHANG AND J E FURNEAUX 321 PHOTOCURRENT SPECTRA OF
INAS/GAO.75LN 0 .25SB SUPERLATTICES WITH INFRARED DETECTOR STRUCTURE X L
HUANG, W Z SHEN, W LU, SC SHEN AND T G ANDERSSON 325 X ELECTRO-OPTICAL
FILTERS AND MODULATORS BASED ON INTERSUBBAND PROCESSES IN
INAS-GASB-ALSB-FAMILY DOUBLE QUANTUM WELLS J R MEYER, * A HOFFMAN, F J
BARTOLI AND L R RAM-MOHAN 330 TWO COLOR HGI_ X CDJTE PHOTOCONDUCTIVE IR
DETECTORS SENSITIVE TO RADIATION FROM 3-5 SSM AND 8-14 /XM BANDS X *
ZHANG, * * HUANG, Z X WANG, W LI, Z L TIAN AND M ZHANG 335 RANDOM
TELEGRAPH NOISE IN HGCDTE PHOTODIODES / SUGIYAMA, T UEDA, N KAJIHARA AND
Y MIYAMOTO 340 ELECTRONIC AND OPTOELECTRONIC DEVICES IN NARROW-GAP
SEMICONDUCTORS T ASHLEY 345 MODELING OF MULTIPLE INGAAS/GAAS QUANTUM
WELL INFRARED PHOTODETECTORS M ERSHOV AND V RYZHII 353 CHAPTER 8:
TRANSPORT DEVICES ELECTRONIC DEVICES BASED ON III-V/V HETEROSTRUCTURES T
D GOLDING, J R MEYER, J HUANG, * A HOFFMAN, E G WANG, J HXU AND J T
ZBOROWSKI 359 ECR-RIE OF HGTE/CDTE AND INAS/GASB HETEROSTRUCTURES
PATTERNED USING NANOCHANNEL GLASS * R EDDY JR, R J TONUCCI, D H PEARSON,
J R MEYER AND * A HOFFMAN 364 DEFECTS AND ELECTRIC PROPERTY
CHARACTERIZATION OF MULTI-ELECTRODE HGI_^CD X TE HALL DEVICES Y CAI, G Z
ZHENG, X * ZHU, J H JIANG, S L GUO AND D Y TANG 369 CYCLOTRON RESONANCE
AND HALL EFFECT STUDIES OF ULTRA-HIGH MOBILITY INSB FILMS Y ZHANG, J SU,
J WINESETT, J E FURNEAUX, W * LIU, M * SANTOS AND R E DOEZEMA 374
FAR-INFRARED STUDIES OF INAS QUANTUM WELLS WITH NB ELECTRODES ELYUH,J GE
HARRIS, E G GWINN, * * WONG AND H KROEMER 379 INDEX 385
|
any_adam_object | 1 |
author2 | Reno, John L. |
author2_role | edt |
author2_variant | j l r jl jlr |
author_facet | Reno, John L. |
building | Verbundindex |
bvnumber | BV010626012 |
classification_rvk | UP 3100 |
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ctrlnum | (OCoLC)832580200 (DE-599)BVBBV010626012 |
dewey-full | 537.622 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.622 |
dewey-search | 537.622 |
dewey-sort | 3537.622 |
dewey-tens | 530 - Physics |
discipline | Physik |
format | Conference Proceeding Book |
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open_access_boolean | |
owner | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-29T DE-703 DE-83 |
owner_facet | DE-355 DE-BY-UBR DE-91 DE-BY-TUM DE-29T DE-703 DE-83 |
physical | X, 388 S. graph. Darst. |
publishDate | 1995 |
publishDateSearch | 1995 |
publishDateSort | 1995 |
publisher | Inst. of Physics Publ. |
record_format | marc |
series | Institute of Physics <London>: Institute of Physics conference series |
series2 | Institute of Physics <London>: Institute of Physics conference series |
spelling | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 ed. by J. L. Reno Bristol [u.a.] Inst. of Physics Publ. 1995 X, 388 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Institute of Physics <London>: Institute of Physics conference series 144 Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1995 Santa Fe NM gnd-content Narrow-Gap-Halbleiter (DE-588)4238102-2 s DE-604 Reno, John L. edt International Conference on Narrow Gap Semiconductors 7 1995 Santa Fe, NM Sonstige (DE-588)5168109-2 oth Institute of Physics <London>: Institute of Physics conference series 144 (DE-604)BV002806317 144 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007087768&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 Institute of Physics <London>: Institute of Physics conference series Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
subject_GND | (DE-588)4238102-2 (DE-588)1071861417 |
title | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 |
title_auth | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 |
title_exact_search | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 |
title_full | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 ed. by J. L. Reno |
title_fullStr | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 ed. by J. L. Reno |
title_full_unstemmed | Narrow gap semiconductors 1995 proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 ed. by J. L. Reno |
title_short | Narrow gap semiconductors 1995 |
title_sort | narrow gap semiconductors 1995 proceedings of the seventh international conference on narrow gap semiconductors santa fe new mexico 8 12 january 1995 |
title_sub | proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 |
topic | Narrow-Gap-Halbleiter (DE-588)4238102-2 gnd |
topic_facet | Narrow-Gap-Halbleiter Konferenzschrift 1995 Santa Fe NM |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007087768&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV002806317 |
work_keys_str_mv | AT renojohnl narrowgapsemiconductors1995proceedingsoftheseventhinternationalconferenceonnarrowgapsemiconductorssantafenewmexico812january1995 AT internationalconferenceonnarrowgapsemiconductorssantafenm narrowgapsemiconductors1995proceedingsoftheseventhinternationalconferenceonnarrowgapsemiconductorssantafenewmexico812january1995 |