Process technology for semiconductor lasers: crystal growth and microprocesses ; with 20 tables
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | German |
| Veröffentlicht: |
Berlin [u.a.]
Springer
1996
|
| Schriftenreihe: | Springer series in materials science
30 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturverz. S. 155 - 166 |
| Beschreibung: | X, 169 S. Ill., graph. Darst. |
| ISBN: | 3540589724 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV010511257 | ||
| 003 | DE-604 | ||
| 005 | 19970624 | ||
| 007 | t | ||
| 008 | 951127s1996 gw ad|| |||| 00||| ger d | ||
| 016 | 7 | |a 945878982 |2 DE-101 | |
| 020 | |a 3540589724 |c Pp. : DM 98.00 |9 3-540-58972-4 | ||
| 035 | |a (OCoLC)246790984 | ||
| 035 | |a (DE-599)BVBBV010511257 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 044 | |a gw |c DE | ||
| 049 | |a DE-20 |a DE-92 |a DE-703 |a DE-898 |a DE-355 |a DE-634 |a DE-83 |a DE-11 |a DE-91G | ||
| 082 | 0 | |a 621.366 | |
| 084 | |a UH 5616 |0 (DE-625)145669: |2 rvk | ||
| 084 | |a UQ 1100 |0 (DE-625)146473: |2 rvk | ||
| 084 | |a ELT 270f |2 stub | ||
| 084 | |a PHY 373f |2 stub | ||
| 100 | 1 | |a Iga, Kenichi |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Process technology for semiconductor lasers |b crystal growth and microprocesses ; with 20 tables |c Kenichi Iga ; Susumu Kinoshita |
| 264 | 1 | |a Berlin [u.a.] |b Springer |c 1996 | |
| 300 | |a X, 169 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Springer series in materials science |v 30 | |
| 500 | |a Literaturverz. S. 155 - 166 | ||
| 650 | 0 | 7 | |a Kristallwachstum |0 (DE-588)4123579-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterlaser |0 (DE-588)4139556-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Schichtwachstum |0 (DE-588)4273432-0 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 0 | 1 | |a Kristallwachstum |0 (DE-588)4123579-4 |D s |
| 689 | 0 | 2 | |a Schichtwachstum |0 (DE-588)4273432-0 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 1 | 1 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 689 | 2 | 0 | |a Halbleiterlaser |0 (DE-588)4139556-6 |D s |
| 689 | 2 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 2 | |5 DE-604 | |
| 700 | 1 | |a Kinoshita, Susumu |e Verfasser |4 aut | |
| 830 | 0 | |a Springer series in materials science |v 30 |w (DE-604)BV000683335 |9 30 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007006430&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
Datensatz im Suchindex
| _version_ | 1805067412914044928 |
|---|---|
| adam_text |
CONTENTS
1.
INTRODUCTION
.
1
1.1
OUTLINE
OF
SEMICONDUCTOR
LASER
THEORY
.
1
1.2
SEMICONDUCTOR
LASERS
IN
OPTO-ELECTRONICS
.
3
1.3
NECESSARY
TECHNOLOGY
FOR
SEMICONDUCTOR
LASERS
.
4
1.4
BRIEF
HISTORY
OF
SEMICONDUCTOR
LASERS
.
5
1.5
TYPICAL
SEMICONDUCTOR
LASERS
.
7
2.
MATERIALS
FOR
SEMICONDUCTOR
LASERS
.
8
2.1
III-V
COMPOUND
SEMICONDUCTORS
.
8
2.1.1
BAND
STRUCTURE
OF
III-V
SEMICONDUCTORS
.
8
2.1.2
OTHER
CHARACTERISTICS
OF
III-V
COMPOUND
SEMICONDUCTORS
.
13
2.2
CRYSTALS
FOR
VISIBLE
TO
NEAR-INFRARED-WAVELENGTH
EMISSION
SEMICONDUCTOR
LASERS
.
15
2.2.1
IMPORTANCE
OF
VISIBLE
TO
NEAR-INFRARED-WAVELENTH
LASER
EMISSION
.
15
2.2.2
CRYSTAL
MATERIALS
FOR
THE
NEAR-INFRARED
REGION
.
15
2.2.3
CRYSTAL
MATERIALS
FOR
VISIBLE
LASER
EMISSION
.
17
2.3
CRYSTALS
FOR
SEMICONDUCTOR
LASERS
WITH
1-GM
AND
LONGER
EMISSION
WAVELENGTHS
.
18
2.3.1
IMPORTANCE
OF
THE
1-^M
EMISSION
WAVELENGTH
.
18
2.3.2
CRYSTAL
MATERIALS
FOR
THE
1-GM
EMISSION
WAVELENGTH
.
20
2.3.3
LONGER-WAVELENGTH
MATERIALS
.
21
3.
BASIC
DESIGN
OF
SEMICONDUCTOR
LASERS
.
22
3.1
DOUBLE
HETEROSTRUCTURES
AND
THEIR
DESIGN
.
22
3.1.1
DOUBLE
HETEROSTRUCTURES
.
22
3.1.2
DESIGN
OF
DOUBLE-HETEROSTRUCTURE
LASERS
.
23
3.1.3
ENERGY-BAND
DIAGRAM
OF
DH
LASERS
.
24
3.1.4
OPTICAL
PROPERTIES
OF
DH
LASERS
.
32
A)
STEP-INDEX
PLANAR
WAVEGUIDE
.
32
B)
TE
MODES
.
34
C)
TM
MODES
.
37
.
D)
MODE-CONFINEMENT
FACTOR
.
38
3.1.5
THRESHOLD
CURRENT
OF
DH
LASERS
.
40
4.
EPITAXY
OF
III-V
COMPOUND
SEMICONDUCTORS
.
43
4.1
III-V
SUBSTRATES
FOR
SEMICONDUCTOR
LASERS
.
43
4.1.1
NECESSITY
OF
SUBSTRATES
.
43
4.1.2
SUBSTRATE
QUALITY
REQUIREMENTS
.43
4.2
BULK
GROWTH
TECHNIQUES
.
45
4.3
HETEROEPITAXIAL
TECHNIQUES
.
.
.
.
45
4.3.1
LIQUID-PHASE
EPITAXY
.
45
4.3.2
VAPOR-PHASE
EPITAXY
.
47
4.3.3
METALO-ORGANIC
CHEMICAL-VAPOR
DEPOSITION
.
47
4.3.4
MOLECULAR
BEAM
EPITAXY
.
48
4.3.5
CHEMICAL
BEAM
EPITAXY
.
49
5.
LIQUID
PHASE
EPITAXY
AND
GROWTH
TECHNOLOGY
.
51
5.1
OUTLINE
OF
AN
LPE
SYSTEM
.
51
5.2
REACTORS
.
52
5.2.1
HORIZONTAL
REACTOR
.
52
5.2.2
VERTICAL
REACTOR
.
56
5.3
LOADING
SUB-SYSTEM
.
57
5.4
PUMP
AND
EXHAUST
SUB-SYSTEM
.58
5.5
GAS-FLOW
SUB-SYSTEM
.59
5.6
HEATING
SUB-SYSTEM
.
60
5.7
MAINTENANCE
.
60
5.7.1
MAINTENANCE
OF
A
GRAPHITE
BOAT
.
60
5.7.2
BAKING
OF
THE
REACTOR
.
60
5.8
LIQUID-PHASE
EPITAXY
.
61
5.9
LPE
PROCESS
.
63
5.9.1
GAALAS/GA
AS
SYSTEM
.63
A)
DETERMINATION
OF
THE
SOURCE-MATERIAL
QUANTITY
.
63
B)
LPE
PROCEDURE
.67
5.9.2
GALNASP/INP
SYSTEM
.
69
5.9.3
OTHER
MATERIALS
.
77
A)
VISIBLE-LIGHT
SEMICONDUCTOR
LASERS
.
80
B)
LONGER-WAVELENGTH
(X
2
FZM)
SEMICONDUCTOR
LASERS
81
6.
VAPOR
PHASE
AND
BEAM
EPITAXIES
.
82
6.1
METAL-ORGANIC
CHEMICAL
VAPOR
DEPOSITION
(MOCVD)
.
82
6.1.1
MOCVD
SYSTEM
.
82
6.1.2
EXAMPLE
OF
MOCVD
GROWTH
.
84
A)
A
DOUBLE-HETEROSTRUCTURE
WAFER
.
84
B)
SEMICONDUCTOR
MULTILAYER
REFLECTOR
.
85
6.1.3
CHARACTERIZATION
.
87
A)
EVALUATION
OF
THE
NOMINAL
THRESHOLD-CURRENT
DENSITY
87
B)
REFLECTIVITY
OF
A
MULTILAYER
BRAGG
REFLECTOR
.
88
6.2
MOLECULAR-BEAM
AND
CHEMICAL-BEAM
EPITAXY
.
89
6.2.1
BACKGROUND
.
89
VIII
6.2.2
CHEMICAL
BEAM
EPITAXIAL
SYSTEM
.
91
6.2.3
PREPARATION
FOR
GROWTH
.
92
6.2.4
GAAS
AND
INP
GROWTH
.
93
6.2.5
GA
X
IN
1
_
X
AS
Y
P
1
_
Y
GROWTH
.
96
6.2.6
DOPING-LEVEL
CONTROL
.98
6.2.7
SUMMARY
OF
CBE
.
99
7.
CHARACTERIZATION
OF
LASER
MATERIALS
.
101
7.1
EVALUATION
OF
LASER
WAFERS
.
101
7.2
MEASUREMENT
OF
LATTICE
MISMATCH
.
103
7.3
MEASUREMENT
OF
THE
IMPURITY
CONCENTRATION
.
105
7.3.1
FOUR-POINT
PROBE
METHOD
.
105
7.3.2
SCHOTTKY
METHOD
.
107
7.3.3
HALL
MEASUREMENT
.
108
7.4
PHOTOLUMINESCENCE
.
110
7.5
MEASUREMENT
OF
THE
REFRACTIVE
INDEX
.
ILL
7.6
MISFIT
DISLOCATION
.
ILL
8.
SEMICONDUCTOR-LASER
DEVICES
-
FABRICATION
AND
CHARACTERISTICS
.
112
8.1
FABRICATION
OF
FUNDAMENTAL
LASER
DEVICES
.
112
8.1.1
BROAD
CONTACT
LASERS
.
112
8.1.2
STRIPE-GEOMETRY
LASERS
.
113
8.2
CURRENT
INJECTION
AND
CONTACTS
.
114
8.2.1
CURRENT/VOLTAGE
CHARACTERISTICS
.
114
8.2.2
CURRENT
INJECTION
.
116
8.3
EVALUATION
OF
THE
THRESHOLD-CURRENT
DENSITY
.
119
8.4
GAIN
BANDWIDTH
AND
OSCILLATION
SPECTRA
.
119
8.5
OUTPUT
AND
EFFICIENCY
OF
SEMICONDUCTOR
LASERS
.
121
8.6
NEAR-FIELD
PATTERN
AND
FAR-FIELD
PATTERN
.
122
8.7
TEMPERATURE
CHARACTERISTICS
.
122
8.8
RELIABILITY
.
123
9.
MODE-CONTROL
TECHNIQUES
IN
SEMICONDUCTOR
LASERS
.
124
9.1
TRANSVERSE-MODE
CHARACTERISTICS
AND
THE
SINGLE-MODE
CONDITION
.
124
9.1.1
NECESSITY
OF
TRANSVERSE-MODE
STABILIZATION
.
124
9.1.2
EQUIVALENT
REFRACTIVE-INDEX
METHOD
.
126
9.1.3
EIGENVALUE
EQUATION
OF
A
GUIDED
MODE
.
127
9.2
LONGITUDINAL-MODE
CONTROL
.
129
9.3
BURYING
EPITAXY
ON
MESAS
AND
V-GROOVES
.
133
9.3.1
STRUCTURES
OF
INDEX-GUIDED
LASERS
.
133
9.3.2
FABRICATION
OF
TRANSVERSE-MODE-CONTROLLED
STRUCTURES
.
134
9.4
MASS-TRANSPORT
TECHNIQUE
.
136
9.5
SELECTIVE
MELTBACK
TECHNIQUE
.
137
IX
9.5.1
SELECTIVE
MELTBACK
CHARACTERISTICS
.
137
9.5.2
APPLICATION
TO
AN
INNER-STRIPE
STRUCTURE
.
138
9.5.3
APPLICATION
TO
BH
STRIPE
LASERS
.
140
9.6
OVERGROWTH
ON
GRATINGS
.
141
9.7
GROWTH
OF
QUANTUM
WELLS
.
141
9.8
GROWTH
OF
MULTILAYER
BRAGG
MIRRORS
.
.YY'.
145
10.
SURFACE-EMITTING
LASERS
.
147
10.1
THE
CONCEPT
OF
SURFACE-EMITTING
LASERS
.
'
.
147
10.2
STRUCTURE
AND
CHARACTERISTICS
.
148
10.2.1
GALNASP/INP
SURFACE-EMITTING
LASERS
.
148
10.2.2
GAALAS/GAAS
SE
LASERS
.
149
10.3
SEMICONDUCTOR
MULTI-LAYER
STRUCTURE
.
150
10.4
TWO-DIMENSIONAL
ARRAYS
.
151
10.5
ULTRALOW-THRESHOLD
DEVICES
.
153
10.6
FUTURE
PROSPECTS
.
154
REFERENCES
.
155
SUBJECT
INDEX
.
167
X |
| any_adam_object | 1 |
| author | Iga, Kenichi Kinoshita, Susumu |
| author_facet | Iga, Kenichi Kinoshita, Susumu |
| author_role | aut aut |
| author_sort | Iga, Kenichi |
| author_variant | k i ki s k sk |
| building | Verbundindex |
| bvnumber | BV010511257 |
| classification_rvk | UH 5616 UQ 1100 |
| classification_tum | ELT 270f PHY 373f |
| ctrlnum | (OCoLC)246790984 (DE-599)BVBBV010511257 |
| dewey-full | 621.366 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.366 |
| dewey-search | 621.366 |
| dewey-sort | 3621.366 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>00000nam a2200000 cb4500</leader><controlfield tag="001">BV010511257</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19970624</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">951127s1996 gw ad|| |||| 00||| ger d</controlfield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">945878982</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">3540589724</subfield><subfield code="c">Pp. : DM 98.00</subfield><subfield code="9">3-540-58972-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)246790984</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010511257</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="044" ind1=" " ind2=" "><subfield code="a">gw</subfield><subfield code="c">DE</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-20</subfield><subfield code="a">DE-92</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-898</subfield><subfield code="a">DE-355</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-91G</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.366</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UH 5616</subfield><subfield code="0">(DE-625)145669:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 1100</subfield><subfield code="0">(DE-625)146473:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 270f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 373f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Iga, Kenichi</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Process technology for semiconductor lasers</subfield><subfield code="b">crystal growth and microprocesses ; with 20 tables</subfield><subfield code="c">Kenichi Iga ; Susumu Kinoshita</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Berlin [u.a.]</subfield><subfield code="b">Springer</subfield><subfield code="c">1996</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">X, 169 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Springer series in materials science</subfield><subfield code="v">30</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturverz. S. 155 - 166</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Schichtwachstum</subfield><subfield code="0">(DE-588)4273432-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Kristallwachstum</subfield><subfield code="0">(DE-588)4123579-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Schichtwachstum</subfield><subfield code="0">(DE-588)4273432-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterlaser</subfield><subfield code="0">(DE-588)4139556-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2="1"><subfield code="a">Halbleitertechnologie</subfield><subfield code="0">(DE-588)4158814-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kinoshita, Susumu</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Springer series in materials science</subfield><subfield code="v">30</subfield><subfield code="w">(DE-604)BV000683335</subfield><subfield code="9">30</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007006430&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield></record></collection> |
| id | DE-604.BV010511257 |
| illustrated | Illustrated |
| indexdate | 2024-07-20T03:33:48Z |
| institution | BVB |
| isbn | 3540589724 |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007006430 |
| oclc_num | 246790984 |
| open_access_boolean | |
| owner | DE-20 DE-92 DE-703 DE-898 DE-BY-UBR DE-355 DE-BY-UBR DE-634 DE-83 DE-11 DE-91G DE-BY-TUM |
| owner_facet | DE-20 DE-92 DE-703 DE-898 DE-BY-UBR DE-355 DE-BY-UBR DE-634 DE-83 DE-11 DE-91G DE-BY-TUM |
| physical | X, 169 S. Ill., graph. Darst. |
| publishDate | 1996 |
| publishDateSearch | 1996 |
| publishDateSort | 1996 |
| publisher | Springer |
| record_format | marc |
| series | Springer series in materials science |
| series2 | Springer series in materials science |
| spelling | Iga, Kenichi Verfasser aut Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables Kenichi Iga ; Susumu Kinoshita Berlin [u.a.] Springer 1996 X, 169 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Springer series in materials science 30 Literaturverz. S. 155 - 166 Kristallwachstum (DE-588)4123579-4 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 gnd rswk-swf Schichtwachstum (DE-588)4273432-0 gnd rswk-swf Halbleiterlaser (DE-588)4139556-6 s Kristallwachstum (DE-588)4123579-4 s Schichtwachstum (DE-588)4273432-0 s DE-604 Epitaxie (DE-588)4152545-0 s Halbleitertechnologie (DE-588)4158814-9 s Kinoshita, Susumu Verfasser aut Springer series in materials science 30 (DE-604)BV000683335 30 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007006430&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Iga, Kenichi Kinoshita, Susumu Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables Springer series in materials science Kristallwachstum (DE-588)4123579-4 gnd Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterlaser (DE-588)4139556-6 gnd Schichtwachstum (DE-588)4273432-0 gnd |
| subject_GND | (DE-588)4123579-4 (DE-588)4152545-0 (DE-588)4158814-9 (DE-588)4139556-6 (DE-588)4273432-0 |
| title | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables |
| title_auth | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables |
| title_exact_search | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables |
| title_full | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables Kenichi Iga ; Susumu Kinoshita |
| title_fullStr | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables Kenichi Iga ; Susumu Kinoshita |
| title_full_unstemmed | Process technology for semiconductor lasers crystal growth and microprocesses ; with 20 tables Kenichi Iga ; Susumu Kinoshita |
| title_short | Process technology for semiconductor lasers |
| title_sort | process technology for semiconductor lasers crystal growth and microprocesses with 20 tables |
| title_sub | crystal growth and microprocesses ; with 20 tables |
| topic | Kristallwachstum (DE-588)4123579-4 gnd Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterlaser (DE-588)4139556-6 gnd Schichtwachstum (DE-588)4273432-0 gnd |
| topic_facet | Kristallwachstum Epitaxie Halbleitertechnologie Halbleiterlaser Schichtwachstum |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=007006430&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000683335 |
| work_keys_str_mv | AT igakenichi processtechnologyforsemiconductorlaserscrystalgrowthandmicroprocesseswith20tables AT kinoshitasusumu processtechnologyforsemiconductorlaserscrystalgrowthandmicroprocesseswith20tables |