Verfügbarkeit: Properties of strained and relaxed silicon germanium

Properties of strained and relaxed silicon germanium:

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Bibliographische Detailangaben
Format:	Buch
Sprache:	English
Veröffentlicht:	London [u.a.] IEE [u.a.] 1995
Schriftenreihe:	Electronic Materials Information Service: EMIS datareviews series 12
Schlagworte:	Germanium Silicium Aufsatzsammlung
Online-Zugang:	Inhaltsverzeichnis
Beschreibung:	XIV, 232 S. Ill., graph. Darst.
ISBN:	0852968264

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Datensatz im Suchindex

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adam_text	PROPERTIES OF STRAINED AND RELAXED SILICON GERMANIUM EDITED BY ERICH KASPER UNIVERSITY OF STUTTGART, GERMANY IEE * JD CONTENTS FOREWORD BY HG. MAGUIRE VII INTRODUCTION BY E. KASPER VIII CONTRIBUTING AUTHORS X ABBREVIATIONS XIII 1. INTRODUCTION 1 1.1 STRESS DRIVEN MORPHOLOGICAL INSTABILITIES AND ISLANDING OF EPITAXIAL FILMS M.A. GRINFELD AND D.J. SROLOVITZ 3 1.2 EQUILIBRIUM THEORIES OF MISFIT DISLOCATION NETWORKS IN THE SIGE/SI SYSTEM R. HULL 17 1.3 METASTABLE STRAINED LAYER CONFIGURATIONS IN THE SIGE/SI SYSTEM R. HULL 28 2. STRUCTURAL PROPERTIES 47 2.1 CRYSTAL STRUCTURE, LATTICE PARAMETERS AND LIQUIDUS-SOLIDUS CURVE OF THE SIGE SYSTEM H.-J. HERZOG 49 2.2 ORDERING IN SIGE ALLOYS W. JAGER 53 2.3 THE SI/GE INTERFACE: STRUCTURE, ENERGY AND INTERDIFFUSION G. THEODOROU AND P.C. KELT RES 61 3. THERMAL, MECHANICAL AND LATTICE VIBRATIONAL PROPERTIES 65 3.1 ELASTIC STIFFNESS CONSTANTS OF SIGE S.P. BAKER AND E. ARZT 6 7 3.2 THERMAL PROPERTIES OF SIGE K.L. WANG ANDX. ZHENG 70 3.3 OPTICAL AND ACOUSTICAL PHONONS IN SIGE; RAMAN SPECTROSCOPY R. SCHORER 79 4. BAND STRUCTURE 85 4.1 ENERGY GAPS AND BAND STRUCTURE OF SIGE AND THEIR TEMPERATURE DEPENDENCE T. FROMHERZ AND G. BAUER 87 4.2 STRAIN EFFECTS ON THE VALENCE-BAND STRUCTURE OF SIGE CG. VAN DE WALLE 94 4.3 STRAIN EFFECTS ON THE CONDUCTION-BAND STRUCTURE OF SIGE CG. VAN DE WALLE 99 4.4 EFFECTIVE MASSES IN SIGE J.F. NIITZEL, CM. ENGELHARDT AND G ABSTREITER 103 4.5 SIGE HETEROJUNCTIONS AND BAND OFFSETS C.G. VAN DE WALLE 4.6 OPTICAL SPECTROSCOPY OF SIGE J. HUMLICEK 116 4.7 OPTICAL FUNCTIONS OF THE RELAXED SIGE ALLOY AND INFLUENCE OF STRAIN J. HUMLICEK 121 - V - 5. TRANSPORT PROPERTIES 133 5.1 ELECTRON AND HOLE MOBILITIES IN THE SIGE/SI SYSTEM F. SCHAEFFLER 135 5.2 INJECTION ACROSS A SI/SIGE HETEROJUNCTION H. JORKE 145 5.3 MAGNETOTRANSPORT IN SIGE/SI STRUCTURES G. STOGER ANDG.BAUER 161 6. SURFACE PROPERTIES 169 6.1 RECONSTRUCTION AND BONDING CONFIGURATIONS OF THE SIGE (100) SURFACE P. C. KELIRES AND G. THEODOROU 171 6.2 ATOMIC STEPS ON GROWING AND ANNEALED (001) SURFACES OF SI AND GE G. THEODOROU AND E. KARRA 176 6.3 SEGREGATION OF GE AND DOPANT ATOMS DURING GROWTH OF SIGE LAYERS H. JORKE 180 7. SOME DEVICE RELATED STRUCTURES ON SILICON SUBSTRATES: A COLLECTION OF THE MOST IMPORTANT DATA 191 7.1 SI/SIGE/SI HETEROJUNCTION BIPOLAR TRANSISTORS J. C. STURM 193 7.2 STRAIN ADJUSTMENT FOR N-MODFETS: SIGE UNSTRAINED, SI STRAINED (1.5%) D.K. NAYAK AND Y. SHIRAKI 205 7.3 SIGE P-MOSFETS: SIGE STRAINED (2.0%) D.K. NAYAK 212 7.4 STRAIN SYMMETRISATION FOR ULTRATHIN SIGE SUPERLATTICES T.P. PEARSALL 217 SUBJECT INDEX 227 - VI -
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isbn	0852968264
language	English
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physical	XIV, 232 S. Ill., graph. Darst.
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series2	Electronic Materials Information Service: EMIS datareviews series
spelling	Properties of strained and relaxed silicon germanium ed. by Erich Kasper London [u.a.] IEE [u.a.] 1995 XIV, 232 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Electronic Materials Information Service: EMIS datareviews series 12 Germanium (DE-588)4135644-5 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4143413-4 Aufsatzsammlung gnd-content Silicium (DE-588)4077445-4 s Germanium (DE-588)4135644-5 s DE-604 Kasper, Erich Sonstige oth Electronic Materials Information Service: EMIS datareviews series 12 (DE-604)BV001897468 12 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006977245&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis
spellingShingle	Properties of strained and relaxed silicon germanium Electronic Materials Information Service: EMIS datareviews series Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd
subject_GND	(DE-588)4135644-5 (DE-588)4077445-4 (DE-588)4143413-4
title	Properties of strained and relaxed silicon germanium
title_auth	Properties of strained and relaxed silicon germanium
title_exact_search	Properties of strained and relaxed silicon germanium
title_full	Properties of strained and relaxed silicon germanium ed. by Erich Kasper
title_fullStr	Properties of strained and relaxed silicon germanium ed. by Erich Kasper
title_full_unstemmed	Properties of strained and relaxed silicon germanium ed. by Erich Kasper
title_short	Properties of strained and relaxed silicon germanium
title_sort	properties of strained and relaxed silicon germanium
topic	Germanium (DE-588)4135644-5 gnd Silicium (DE-588)4077445-4 gnd
topic_facet	Germanium Silicium Aufsatzsammlung
url	http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006977245&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA
volume_link	(DE-604)BV001897468
work_keys_str_mv	AT kaspererich propertiesofstrainedandrelaxedsilicongermanium

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