The MOCVD challenge: 2 A survey of GaInAsP-GaAs for photonic and electronic device applications
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Bristol [u.a.]
Hilger [u.a.]
1995
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XVI, 443 S. Ill., graph. Darst. |
| ISBN: | 0750303093 |
Internformat
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Datensatz im Suchindex
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| adam_text | THE MOCVD CHALLENGE VOLUME 2: A SURVEY OF GALNASP-GAAS FOR PHOTONIC AND
ELECTRONIC DEVICE APPLICATIONS MANIJEH RAZEGHI MCCORMICK SCHOOL OF
ENGINEERING CENTER FOR QUANTUM DEVICES/EECS DEPARTMENT NORTHWESTERN
UNIVERSITY EVANSTON, ILLINOIS 60208 INSTITUTE OF PHYSICS PUBLISHING
BRISTOL AND PHILADELPHIA CONTENTS PREFACE XI FOREWORD XIII INTRODUCTION
XV 1 INTRODUCTION TO SEMICONDUCTOR COMPOUNDS 1 1.1 III-V SEMICONDUCTOR
ALLOYS 1 1.2 III-V SEMICONDUCTOR DEVICES 4 1.3 TECHNOLOGY OF MULTILAYER
GROWTH 8 REFERENCES 19 2 MOCVD GROWTH TECHNIQUE 22 2.1 MOCVD GROWTH
SYSTEMS 22 2.2 THE MOCVD GROWTH MECHANISM AND GROWTH PROCESS 29 2.3 GAS
FLOW PATTERNS AND REACTOR DESIGN 34 2.4 MOCVD STARTING MATERIALS 42 2.5
LOW-PRESSURE MOCVD AND MOMBE 47 REFERENCES 49 3 IN SITU CHARACTERIZATION
DURING MOCVD 54 3.1 INTRODUCTION 54 3.2 REFLECTANCE ANISOTROPY AND
ELLIPSOMETRY 57 3.3 OPTIMIZATION OF THE GROWTH OF III-V BINARIES BY RDS
64 3.4 RDS INVESTIGATION OF III-V LATTICE-MATCHED HETEROJUNCTIONS 71 3.5
RDS INVESTIGATION OF III-V LATTICE-MISMATCHED STRUCTURES 88 3.6 INSIGHTS
ON THE GROWTH PROCESS- 108 REFERENCES 111 4 EX SITU CHARACTERIZATION
TECHNIQUES 114 4.1 CHEMICAL BEVEL REVELATION 114 4.2 DEEP-LEVEL
TRANSIENT SPECTROSCOPY 118 4.3 X-RAY DIFFRACTION 129 VIII CONTENTS 4.4
4.5 4.6 4.7 PHOTOLUMINESCENCE ELECTROCHEMICAL CAPACITANCE-VOLTAGE AND
PHOTOVOLTAGE SPECTROSCOPY RESISTIVITY AND HALL MEASUREMENT THICKNESS
MEASUREMENT REFERENCES MOCVD GROWTH OF GAAS LAYERS 5.1 5.2 5.3 5.4 5.5
INTRODUCTION GAAS AND RELATED COMPOUNDS BAND STRUCTURE MOCVD GROWTH
MECHANISM OF GAAS AND RELATED COMPOUNDS EXPERIMENTAL DETAILS
INCORPORATION OF IMPURITIES IN GAAS GROWN BY MOCVD REFERENCES GROWTH AND
CHARACTERIZATION OF THE GALNP-GAAS SYSTEM 6.1 6.2 6.3 6.4 6.5 6.6
INTRODUCTION GROWTH DETAILS STRUCTURAL ORDER IN GA X IN]_ X P ALLOYS
GROWN BY MOCVD DEFECTS IN GALNP LAYERS GROWN BY MOCVD DOPING BEHAVIOUR
OF GALNP GAAS-GALNP HETEROSTRUCTURES 143 149 155 166 168 170 170 170 179
182 188 197 199 199 200 202 204 207 214 6.7 GROWTH AND CHARACTERIZATION
OF GALNP-GAAS MULTILAYERS BY MOCVD 248 6.8 OPTICAL AND STRUCTURAL
INVESTIGATIONS OF GAAS-GALNP QUANTUM WELLS AND SUPERLATTICES GROWN BY
MOCVD 252 6.9 CHARACTERIZATION OF GAAS-GALNP QUANTUM WELLS BY AUGER
ANALYSIS ON CHEMICAL BEVELS 260 6.10 EVALUATION OF THE BAND OFFSETS OF
GAAS/GALNP MULTILAYERS BY ELECTROREFLECTANCE (RAZEGHI ET AL 1992) 264
6.11 INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM WELLS 275
REFERENCES 279 7 OPTICAL DEVICES 283 7.1 ELECTRO-OPTICAL MODULATORS 283
7.2 GAAS-BASED INFRARED PHOTODETECTORS GROWN BY MOCVD 293 7.3 SOLAR
CELLS AND GAAS SOLAR CELLS 308 REFERENCES 313 8 GAAS-BASED LASERS 317
8.1 INTRODUCTION 317 8.2 BASIC PHYSICAL CONCEPTS 318 8.3 LASER
STRUCTURES 326 CONTENTS IX 8.4 NEW GAAS-BASED MATERIALS FOR LASERS 336
REFERENCES 365 9 GAAS-BASED HETEROJUNCTION ELECTRON DEVICES GROWN BY
MOCVD 369 9.1 INTRODUCTION 369 9.2 HETEROSTRUCTURE FIELD-EFFECT
TRANSISTORS (HFETS) 371 9.3 HETEROJUNCTION BIPOLAR TRANSISTORS (HBTS)
391 REFERENCES 400 10 OPTOELECTRONIC INTEGRATED CIRCUITS (OEICS) 403
10.1 INTRODUCTION 403 10.2 MATERIAL CONSIDERATIONS 404 10.3 OEICS ON SI
SUBSTRATE 405 10.4 THE ROLE OF OPTOELECTRONIC INTEGRATION IN COMPUTING
409 10.5 EXAMPLES OF OPTOELECTRONIC INTEGRATION BY MOCVD 414 REFERENCES
417 APPENDICES A EFFECT OF SUBSTRATE MISCUT ON THE MEASURED SUPERLATTICE
PERIOD 419 * OPTIMIZATION OF THICKNESS AND IN COMPOSITION OF INGAAS WELL
FOR 980 NM LASERS 422 REFERENCES 425 * ENERGY LEVELS AND LASER GAINS IN
A QUANTUM WELL (GALNASP): THE EFFECTIVE MASS APPROXIMATION 426 D
LUTTINGER-KOHN HAMILTONIAN 429 D.L K-P THEORY 429 D.2 LUTTINGER-KOHN
HAMILTONIAN 429 REFERENCES 430 E INFRARED DETECTORS 431 E.L
CLASSIFICATION 431 E.2 GENERAL THEORY OF PHOTODETECTORS 431 REFERENCES
435 INDEX 437
|
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| illustrated | Illustrated |
| indexdate | 2024-07-09T17:52:55Z |
| institution | BVB |
| isbn | 0750303093 |
| language | English |
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| physical | XVI, 443 S. Ill., graph. Darst. |
| publishDate | 1995 |
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| spelling | Razeghi, Manijeh Verfasser aut The MOCVD challenge 2 A survey of GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi Bristol [u.a.] Hilger [u.a.] 1995 XVI, 443 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier (DE-604)BV006946716 2 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006971378&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Razeghi, Manijeh The MOCVD challenge |
| title | The MOCVD challenge |
| title_auth | The MOCVD challenge |
| title_exact_search | The MOCVD challenge |
| title_full | The MOCVD challenge 2 A survey of GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_fullStr | The MOCVD challenge 2 A survey of GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_full_unstemmed | The MOCVD challenge 2 A survey of GaInAsP-GaAs for photonic and electronic device applications Manijeh Razeghi |
| title_short | The MOCVD challenge |
| title_sort | the mocvd challenge a survey of gainasp gaas for photonic and electronic device applications |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006971378&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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