Surface passivation for silicon solar cells: = Oppervlakte-passivering voor silicium zonnecellen
Gespeichert in:
| 1. Verfasser: | |
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| Format: | Abschlussarbeit Buch |
| Sprache: | Dutch English |
| Veröffentlicht: |
1995
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XII, 163 S. graph. Darst. |
| ISBN: | 903930887X |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
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| 001 | BV010328864 | ||
| 003 | DE-604 | ||
| 005 | 19950804 | ||
| 007 | t | ||
| 008 | 950804s1995 d||| m||| 00||| dut d | ||
| 020 | |a 903930887X |9 90-393-0887-X | ||
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| 035 | |a (DE-599)BVBBV010328864 | ||
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| 041 | 0 | |a dut |a eng | |
| 049 | |a DE-355 |a DE-188 | ||
| 100 | 1 | |a Leguijt, Cornelis |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Surface passivation for silicon solar cells |b = Oppervlakte-passivering voor silicium zonnecellen |c door Cornelis Leguijt |
| 246 | 1 | 1 | |a Oppervlakte-passivering voor silicium zonnecellen |
| 264 | 1 | |c 1995 | |
| 300 | |a XII, 163 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Utrecht, Univ., Diss., 1995 | ||
| 650 | 7 | |a Oppervlaktebehandeling |2 gtt | |
| 650 | 7 | |a Silicium |2 gtt | |
| 650 | 7 | |a Zonnecellen |2 gtt | |
| 650 | 0 | 7 | |a Solarzelle |0 (DE-588)4181740-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 655 | 7 | |a Proefschriften (vorm) |2 gtt | |
| 689 | 0 | 0 | |a Solarzelle |0 (DE-588)4181740-0 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
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| 999 | |a oai:aleph.bib-bvb.de:BVB01-006873899 | ||
Datensatz im Suchindex
| _version_ | 1804124749103628288 |
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| adam_text | IMAGE 1
CONTENTS
1 GENERAL INTRODUCTION 1
1.1 RENEWABLE ENERGY 1
1.2 PHOTOVOLTAICS 2
1.3 THIS WORK 4
2 SURFACE RECOMBINATION 7
2.1 INTRODUCTION 7
2.2 TRANSPARENCY AND PASSIVATION OF BASE AND EMITTER 8 2.2.1
INTRODUCTION 8
2.2.2 HOMOGENEOUSLY DOPED LAYERS 9
2.2.3 NON-HOMOGENEOUSLY DOPED LAYERS 13
2.3 SURFACE RECOMBINATION AND CELL PERFORMANCE 13 2.3.1 INTRODUCTION 13
2.3.2 DARK CURRENT J O 14
2.3.3 INTERNAL QUANTUM EFFICIENCY 15
2.3.4 CELL EFFICIENCY 17
2.4 SHOCKLEY-READ-HALL RECOMBINATION AT SURFACES 18 2.4.1 INTRODUCTION
18
2.4.2 THERMAL EQUILIBRIUM, FLAT BANDS 19
2.4.3 NON-EQUILIBRIUM, FLAT BANDS 20
2.4.4 NON-EQUILIBRIUM, NO FLAT BANDS 21
2.4.5 ABOUT D IT , QJ AND THE CAPTURE CROSS SECTIONS 26
2.4.5.1 DENSITY OF SURFACE STATES 26
2.4.5.2 FIXED SURFACE CHARGES 26
2.4.5.3 CAPTURE CROSS SECTIONS 27
2.5 SHIELDING OF THE SURFACE BY DOPING PROFILES 27
2.5.1 INTRODUCTION 27
2.5.2 LOW-HIGH JUNCTION (BACK SURFACE FIELD) 28
2.5.3 FLOATING JUNCTION 32
2.6 SUMMARY OF RESULTS 33
IMAGE 2
CONTENTS
MEASUREMENT METHODS 35
3.1 INTRODUCTION 35
3.2 CALCULATION OF EXTREMA 36
3.2.1 INTRODUCTION 36
3.2.2 FUNDAMENTAL DECAY MODE 38
3.2.2.1 FUNCTION BEHAVIOUR 38
3.2.2.2 RECOMBINATION SPACE 38
3.2.3 EXTREMA OF RECOMBINATION PARAMETERS 40
3.2.3.1 EXTRACTION OF EXTREMA FOR R B FOR GIVEN % 41
3.2.3.2 EXTRACTION OF EXTREMA FOR ^2 FOR GIVEN TI 42
3.2.4 SPECIAL CASE S X = S 2 43
3.3 SHORT CIRCUIT CURRENT DECAY 43
3.3.1 INTRODUCTION 43
3.3.2 INSTRUMENTATION 44
3.3.3 MATHEMATICAL DESCRIPTION 45
3.4 MICROWAVE REFLECTION 47
3.4.1 INTRODUCTION 47
3.4.2 GENERAL PRINCIPLES 48
3.4.3 THEORY OF PHOTOCONDUCTIVITY MODULATION 51
3.4.3.1 THE MICROWAVE SIGNAL 51
3.4.3.2 HARMONIC MODULATION 51
3.4.3.3 PULSED MODULATION 55
3.4.4 INSTRUMENTATION 56
3.4.4.1 CALIBRATION 58
3.4.5 SENSITIVITY 59
3.4.6 EXAMPLES OF EXPERIMENTS 60
3.4.6.1 PULSED LIGHT 60
3.4.6.2 HARMONIC MODULATION TECHNIQUE 61
BORON DOPED BACK SURFACE FIELDS 63
4.1 INTRODUCTION 63
4.2 EXPERIMENTAL 64
4.2.1 WAFER PREPARATION 64
4.2.2 SOLAR CELL PREPARATION 66
4.3 CHARACTERIZATION OF DOPING PROFILES 66
4.3.1 INTRODUCTION 66
4.3.2 PROFILE CHARACTERIZATION . 67
4.3.2.1 SHEET RESISTANCE 67
4.3.2.2 SIMS 67
IMAGE 3
CONTENTS
4.3.2.3 STRIPPING HALL PROFILING 68
4.4 RESULTS 69
4.4.1 P + PP + SAMPLES 69
4.4.2 N + PP + SOLAR CELLS 71
4.4.3 COMPARISON TO OTHER DOPING METHOD 72
4.4.3.1 INTRODUCTION 72
4.4.3.2 EXPERIMENTAL 73
4.4.3.3 RESULTS 74
4.5 DISCUSSION 74
4.5.1 COMPARISON OF RESULTS ON P+PP+AND N+PP + SAMPLES 74
4.5.2 CALCULATION OF S E F/ FROM DOPING PROFILE 75
4.5.3 COMPARISON OF MEASURED AND MODELED VALUES OF S E /F 77
4.6 CONCLUSIONS 77
LOW TEMPERATURE SURFACE PASSIVATION 79
5.1 INTRODUCTION 80
5.1.1 LOW TEMPERATURE PROCESSING 80
5.1.2 PLASMA ENHANCED CVD 82
5.1.3 PECVD LAYERS FOR SURFACE PASSIVATION 86
5.2 RECOMBINATION VELOCITIES WITH PECVD SI-NITRIDE 87 5.2.1 INFLUENCE OF
PLASMA POWER 87
5.2.1.1 INTRODUCTION 87
5.2.1.2 EXPERIMENTAL 87
5.2.1.3 RESULTS 89
5.2.1.4 DISCUSSION AND CONCLUSIONS 90
5.2.2 INFLUENCE OF ANNEAL AND SUBSTRATE 91
5.2.2.1 INTRODUCTION 91
5.2.2.2 EXPERIMENTAL 92
5.2.2.3 RESULTS 94
5.2.2.4 DISCUSSION AND CONCLUSIONS 96
5.3 RECOMBINATION VELOCITIES WITH PECVD SI-OXIDE 98 5.3.1 INFLUENCE OF
PLASMA POWER (TEOS) 98
5.3.1.1 INTRODUCTION 98
5.3.1.2 EXPERIMENTAL 99
5.3.1.3 RESULTS 99
5.3.1.4 DISCUSSION AND CONCLUSIONS 101
5.3.2 INFLUENCE OF ANNEAL AND SUBSTRATE (SILANE) 102
5.3.2.1 INTRODUCTION 102
5.3.2.2 EXPERIMENTAL 103
IMAGE 4
CONTENTS
5.3.2.3 RESULTS 103
5.3.2.4 DISCUSSION AND CONCLUSIONS 106
5.4 MECHANISM OF PASSIVATION BY PECVD 108
5.4.1 ROLE OF HYDROGEN FROM ANNEAL AMBIENT 108
5.4.1.1 INTRODUCTION 108
5.4.1.2 EXPERIMENTAL 109
5.4.1.3 MEASUREMENTS OF DEUTERIUM CONCENTRATION PROFILE 109 5.4.1.4
RESULTS 110
5.4.1.5 DISCUSSION AND CONCLUSIONS 113
5.4.2 CV-MIS CHARACTERIZATION 115
5.4.2.1 INTRODUCTION 115
5.4.2.2 EXPERIMENTAL 116
5.4.2.3 RESULTS 117
5.4.2.4 DISCUSSION AND CONCLUSIONS 117
5.4.3 STABILITY OF OBTAINED PASSIVATION 120
5.4.3.1 INTRODUCTION 120
5.4.3.2 EXPERIMENTAL 121
5.4.3.3 RESULTS 123
5.4.3.4 DISCUSSION AND CONCLUSIONS 124
5.5 COMPARISON OF EXPERIMENTS 125
5.5.1 INTRODUCTION 125
5.5.2 MODEL INPUT PARAMETERS 125
5.5.3 MODEL CALCULATIONS OF 5 E // 127
5.5.4 DISCUSSION AND CONCLUSIONS 128
5.6 SUMMARY OF RESULTS 130
EMITTER PASSIVATION BY PECVD 133
6.1 INTRODUCTION 133
6.2 EXPERIMENTAL 134
6.3 EMITTER PROFILE CHARACTERIZATION 135
6.4 RESULTS 136
6.5 DISCUSSION 138
6.5.1 COMPARISON WITH CALCULATED VALUES OF S E FJ 138
6.5.2 RECONSIDERING THE ASSUMPTIONS FOR 5 E // 140
6.5.2.1 PHOTON ABSORPTION IN THE EMITTER AND SCR 140
6.5.2.2 RECOMBINATION AND GENERATION VIA TRAP LEVELS IN THE SCR 141
6.5.2.3 SHUNTING OF THE DIODE 141
6.5.2.4 COMPARISON WITH MEASUREMENTS OF S E FF 142
6.6 CONCLUSIONS 144
IMAGE 5
CONTENTS
SUMMARY 145
SAMENVATTING 147
REFERENCES 149
LIST OF PUBLICATIONS 159
NAWOORD 161
LEVENSLOOP 163
|
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| genre_facet | Hochschulschrift Proefschriften (vorm) |
| id | DE-604.BV010328864 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:50:36Z |
| institution | BVB |
| isbn | 903930887X |
| language | Dutch English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006873899 |
| oclc_num | 69119892 |
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| owner_facet | DE-355 DE-BY-UBR DE-188 |
| physical | XII, 163 S. graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
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| spelling | Leguijt, Cornelis Verfasser aut Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen door Cornelis Leguijt Oppervlakte-passivering voor silicium zonnecellen 1995 XII, 163 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Utrecht, Univ., Diss., 1995 Oppervlaktebehandeling gtt Silicium gtt Zonnecellen gtt Solarzelle (DE-588)4181740-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Proefschriften (vorm) gtt Solarzelle (DE-588)4181740-0 s Silicium (DE-588)4077445-4 s DE-604 SWB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006873899&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Leguijt, Cornelis Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen Oppervlaktebehandeling gtt Silicium gtt Zonnecellen gtt Solarzelle (DE-588)4181740-0 gnd Silicium (DE-588)4077445-4 gnd |
| subject_GND | (DE-588)4181740-0 (DE-588)4077445-4 (DE-588)4113937-9 |
| title | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen |
| title_alt | Oppervlakte-passivering voor silicium zonnecellen |
| title_auth | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen |
| title_exact_search | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen |
| title_full | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen door Cornelis Leguijt |
| title_fullStr | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen door Cornelis Leguijt |
| title_full_unstemmed | Surface passivation for silicon solar cells = Oppervlakte-passivering voor silicium zonnecellen door Cornelis Leguijt |
| title_short | Surface passivation for silicon solar cells |
| title_sort | surface passivation for silicon solar cells oppervlakte passivering voor silicium zonnecellen |
| title_sub | = Oppervlakte-passivering voor silicium zonnecellen |
| topic | Oppervlaktebehandeling gtt Silicium gtt Zonnecellen gtt Solarzelle (DE-588)4181740-0 gnd Silicium (DE-588)4077445-4 gnd |
| topic_facet | Oppervlaktebehandeling Silicium Zonnecellen Solarzelle Hochschulschrift Proefschriften (vorm) |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006873899&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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