Characterization in compound semiconductor processing:
Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaAlAs, InP and HgCdTe based dev...
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Boston u.a.
Butterworth-Heinemann u.a.
1995
|
| Schriftenreihe: | Materials characterization series
|
| Schlagworte: | |
| Zusammenfassung: | Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaAlAs, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction. |
| Beschreibung: | XIV, 199 S. Ill., graph. Darst. |
| ISBN: | 0750692669 |
Internformat
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| 245 | 1 | 0 | |a Characterization in compound semiconductor processing |c Ed.: Yale Strausser ... |
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| 300 | |a XIV, 199 S. |b Ill., graph. Darst. | ||
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| 490 | 0 | |a Materials characterization series | |
| 520 | 3 | |a Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaAlAs, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction. | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
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Datensatz im Suchindex
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| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV010079002 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:46:08Z |
| institution | BVB |
| isbn | 0750692669 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006689848 |
| oclc_num | 30893976 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | XIV, 199 S. Ill., graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Butterworth-Heinemann u.a. |
| record_format | marc |
| series2 | Materials characterization series |
| spelling | Characterization in compound semiconductor processing Ed.: Yale Strausser ... Boston u.a. Butterworth-Heinemann u.a. 1995 XIV, 199 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials characterization series Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaAlAs, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction. Semiconducteurs ram Compound semiconductors Compound semiconductors Surfaces Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 s Halbleiterschicht (DE-588)4158812-5 s DE-604 Strausser, Yale Sonstige oth |
| spellingShingle | Characterization in compound semiconductor processing Semiconducteurs ram Compound semiconductors Compound semiconductors Surfaces Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| subject_GND | (DE-588)4062623-4 (DE-588)4158812-5 |
| title | Characterization in compound semiconductor processing |
| title_auth | Characterization in compound semiconductor processing |
| title_exact_search | Characterization in compound semiconductor processing |
| title_full | Characterization in compound semiconductor processing Ed.: Yale Strausser ... |
| title_fullStr | Characterization in compound semiconductor processing Ed.: Yale Strausser ... |
| title_full_unstemmed | Characterization in compound semiconductor processing Ed.: Yale Strausser ... |
| title_short | Characterization in compound semiconductor processing |
| title_sort | characterization in compound semiconductor processing |
| topic | Semiconducteurs ram Compound semiconductors Compound semiconductors Surfaces Verbindungshalbleiter (DE-588)4062623-4 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| topic_facet | Semiconducteurs Compound semiconductors Compound semiconductors Surfaces Verbindungshalbleiter Halbleiterschicht |
| work_keys_str_mv | AT strausseryale characterizationincompoundsemiconductorprocessing |