Materials issues in microcrystalline semiconductors: symposium held November 29- December 1, 1989, Boston Massachusetts, USA
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, Pa.
Materials Research Soc.
1990
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
164 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XI, 399 S. Ill., graph. Darst. 24 cm |
| ISBN: | 1558990526 |
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| 245 | 1 | 0 | |a Materials issues in microcrystalline semiconductors |b symposium held November 29- December 1, 1989, Boston Massachusetts, USA |c Ed.: Philippe M. Fauchet ... |
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| adam_text | MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 164 MATERIALS
ISSUES IN MICROCRYSTALLINE SEMICONDUCTORS SYMPOSIUM HELD NOVEMBER
29-DECEMBER 1, 1989, BOSTON, MASSACHUSETTS, U.S.A. EDITORS: PHILIPPE M.
FAUCHET PRINCETON UNIVERSITY, PRINCETON, NEW JERSEY, U.S.A. KAZUNOBU
TANAKA ELECTROTECHNICAL LABORATORY, IBARAKI, JAPAN CHUANG CHUANG TSAI
XEROX PALO ALTO RESEARCH CENTER, PALO ALTO, CALIFORNIA, U.S.A. MIRISI
MATERIALS RESEARCH SOCIETY PITTSBURGH, PENNSYLVANIA CONTENTS PREFACE XI
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS XIII PART I:
MICROCRYSTALLINE SILICON: GROWTH *ROLE OF SURFACE AND GROWTH-ZONE
REACTIONS IN THE FORMATION PROCESS OF YC-SI:H 3 A. MATSUDA AND T. GOTO
OPTO-ELECTRONIC PROPERTIES OF **-SI GROWN FROM SIF 4 AND HO BY PECVD 15
Y. OKADA, I.H. CAMPBELL, P.M. FAUCHET, AND S. WAGNER FORMATION OF
MICROCRYSTALLINE SILICON FILM BY RMS PROCESS 21 CHENG WANG, G.N.
PARSONS, E.C. BUEHLER, R.J. NEMANICH, AND G. LUCOVSKY PREPARATION AND
CHARACTERIZATION OF HIGHLY CONDUCTIVE (100 S/CM) PHOSPHORUS DOPED
YC-SI:H FILMS DEPOSITED USING THE VHF-GD TECHNIQUE 27 KSHEM PRASAD, F.
FINGER, H. CURTINS, A. SHAH, AND J. BAUMAN COMPOSITION DETERMINATION OF
MICROCRYSTALLINE TWO-PHASE SILICON RICH OXIDES 33 D.H. BOULDIN, C.H.
LAM, AND K. ROSE *CHEMISTRY AND SOLID STATE PHYSICS OF MICROCRYSTALLINE
SILICON 39 STAN VEPREK ELECTRONIC AND STRUCTURAL CHARACTERIZATION OF THE
NEAR SURFACE LAYER AND THE BULK IN **-SI:H PREPARED WITH HYDROGEN
DILUTION 51 SAMER ALJISHI, SHU JIN, MARTIN STUTZMANN, AND LOTHAR LEY THE
FORMATION OF SILICON CLUSTERS IN PLASMA-ENHANCED CHEMICALLY VAPOUR
DEPOSITED SI:0:H:F ALLOYS 57 A.G. DIAS AND J. FIGUEIREDO PREPARATION OF
CRYSTALLINE SI THIN FILMS BY SPONTANEOUS CHEMICAL DEPOSITION 63 TOHRU
KOMIYA, AKIRA KAMO, HIROSHI KUJIRAI, ISAMU SHIMIZU, AND JUN-ICHI HANNA
MICROCRYSTALLINE SILICON FILMS PRODUCED BY RF MAGNETRON SPUTTERING AND
THE EFFECT OF DIFFERENT AMBIENTS ON THEIR CONDUCTIVITY 69 RATNABALI
BANERJEE, A.K. BANDYOPADHYAY, S.N. SHARMA, A.K. BATABYAL, AND A.K. BARUA
*INVITED PAPER THE GRAPHITIZATION OF AMORPHOUS HYDROGENATED CARBON FILMS
DURING THERMAL ANNEALING SAM SHUHAN LIN, SHUGUANG CHEN, AND DANG MO 75
PART II: SEMICONDUCTOR COMPOUNDS: NANOCRYSTALS ELECTRODEPOSITION OF 3-D
SIZE-QUANTIZED CDS AND CDSE FILMS 81 G. HODES, T. ENGELHARD, A.
ALBU-YARON, AND A. PETTFORD-LONG STRUCTURAL AND ELECTRICAL
CHARACTERIZATION OF CDSE THIN FILMS 87 MILTIADIS K. HATALIS, FUYU LIN,
AND MICHAEL R. WESTCOTT A STUDY OF THE PRESSURE-INDUCED PHASE TRANSITION
IN BULK AND NANOCRYSTALLINE CADMIUM SULFIDE 9 3 XUE-SHU ZHAO, JOHN
SCHROEDER, PETER D. PERSANS, AND ENLIAN LU TIME-RESOLVED SPECTRA OF EDGE
EMISSION OF CDSE MESOSCOPIC CLUSTERS IN GEO, GLASS MATRIX 99 TAKAO
INOKUMA, MITSURU ISHIKAWA, AKINORI TANAKA, AND TOSHIHIRO ARAI *OPTICAL
PROPERTIES OF II-VI SEMICONDUCTOR DOPED GLASS 105 P.D. PERSANS, AN TU,
M. LEWIS, T. DRISCOLL, AND R. REDWING FABRICATION AND CHARACTERIZATION
STUDIES OF SEMICONDUCTOR- IMPREGNATED POROUS VYCOR GLASS 117 CA. HUBER,
*.*. HUBER, *. *. SALZBERG, AND J. A. PEREZ SYNTHESIS, STRUCTURAL AND
OPTICAL CHARACTERIZATION OF II-VI SEMICONDUCTORS INCLUDED IN
SODALITE-TYPE HOSTS 123 K.L. MORAN, W.T.A. HARRISON, *.*. GIER, J.E.
MACDOUGALL, AND G.D. STUCKY THE PREPARATION OF III-V SEMICONDUCTORS IN
AQUEOUS SOLUTION 129 TOBY J. CUMBERBATCH AND ANDREW PUTNIS ROOM
TEMPERATURE EXCITONIC ABSORPTION IN SMALL CDS CRYSTALLITES 135 D.K. RAI
AND BINOD KUMAR PARTICLE-SIZE DISTRIBUTION OF CDSE QUANTUM DOTS
DETERMINED BY PHOTOLUMINESCENCE SPECTROSCOPY 141 E.N. PRABHAKAR, CA.
HUBER, AND D. HEIMAN THERMAL ANNEALING OF AMORPHOUS COMNNIO FILM ON
OXIDIZED SI SUBSTRATE 147 TAN HUI, QIN DONG, TAO MINGDE, LIN CHENGLU,
AND ZOU SHICHANG PREPARATION AND CHARACTERIZATION OF MOLYBDENUM
DISULFIDE MICROCRYSTALS IN COLLOIDAL DISPERSION 153 E. LU, P.D. PERSANS,
A.F. RUPPERT, AND R.R. CHIANELLI *INVITED PAPER PART III:
MICROCRYSTALLINE SILICON: PROPERTIES *THE ROLE OF HYDROGEN IN SILICON
MICROCRYSTALLIZATION 161 S. WAGNER, S.H. WOLFF, AND J.M. GIBSON
MICROCRYSTAL SI FILMS PREPARED BY REMOTE PLASMA CVD 171 SUNG CHUL KIM,
JUNG TAE HWANG, SEUNG KYU LEE, CHANG YOUNG JUNG, SUNG MOO SOE, SUNG OK
KOH, KWAN SOO CHUNG, AND JIN JANG FRACTAL-LIKE STRUCTURES PRESENT IN
HYDROGENATED AMORPHOUS AND MICROCRYSTALLINE SILICON 177 M.J. GEERTS,
R.C. VAN OORT, AND J.* VAN DEN HEUVEL FAST-PULSE EXCIMER-LASER-INDUCED
PROCESSES IN A-SI:H 183 K. WINER, R.Z. BACHRACH, R.I. JOHNSON, S.E.
READY, G.B. ANDERSON, AND J.B. BOYCE HYDROGEN PASSIVATION OF DOPED AND
UNDOPED MICROCRYSTALLINE SILICON 189 M. STUTZMANN, *.P. HERRERO, M.
INGELS, AND A. BREITSCHWERDT »CONTROL OF CHEMICAL REACTIONS FOR GROWTH
OF CRYSTALLINE SI AT LOW SUBSTRATE TEMPERATURE 19 5 ISAMU SHIMIZU,
JUN-ICHI HANNA, AND HAJIME SHIRAI EFFECTS OF HYDROGEN ATOMS ON
PASSIVATION AND GROWTH OF MICROCRYSTALLINE SI 2 05 TOSHIMICHI ITO,
TATSURO YASUMATSU, HIROKUNI WATABE, MOTOHIRO IWAMI, AND AKIO HIRAKI A
DISCUSSION OF ELECTRONIC OPTICAL ABSORPTION SPECTRA OF NANOCRYSTALLINE
SILICON THIN FILMS 211 ETIENNE BUSTARRET AND M.A. HACHICHA GROWTH OF
MICROCRYSTALLINE SILICON IN ULTRATHIN LAYERS 217 Y.-J. WU, P.D. PERSANS,
*. ABELES, AND S.-L. WANG PICOSECOND PHOTOMODULATION STUDY OF
NANOCRYSTALLINE HYDROGENATED SILICON 223 M. WRABACK, LINGRONG CHEN, J.
TAUE, AND Z. VARDENY OPTICAL PROPERTIES OF MICROCRYSTALLINE SILICON 229
MARTIN INGELS, MARTIN STUTZMANN, AND STEFAN ZOLLNER TRANSPORT PROPERTIES
OF B-, P-DOPED AND UNDOPED 5 0 KHZ PECVD MICROCRYSTALLINE SILICON 235
M.A. HACHICHA AND ETIENNE BUSTARRET SUPPRESSION OF ACCEPTOR DEACTIVATION
IN SILICON BY DISORDERED SURFACE REGIONS 2 39 K. SRIKANTH AND S. ASHOK
*INVITED PAPER PART IV: OPTICAL PROPERTIES »PROPERTIES OF BINARY SI:H
MATERIALS PREPARED BY HYDROGEN PLASMA SPUTTERING 247 SHOJI FURUKAWA AND
TATSURO MIYASATO CRITICAL REVIEW OF RAMAN SPECTROSCOPY AS A DIAGNOSTIC
TOOL FOR SEMICONDUCTOR MICROCRYSTALS 259 P.M. FAUCHET AND I.H. CAMPBELL
RAMAN SCATTERING FROM MICROCRYSTALLINE FILMS: CONSIDERATIONS OF
COMPOSITE STRUCTURES WITH DIFFERENT OPTICAL ABSORPTION PROPERTIES 2 65
R.J. NEMANICH, E.C. BUEHLER, Y.M. LEGRICE, R.E. SHRODER, G.N. PARSONS,
C. WANG, G. LUCOVSKY, AND J.B. BOYCE PHONON STATES IN SIC SMALL
PARTICLES 271 Y. SASAKI, C. HORIE, AND Y. NISHINA NONLINEAR OPTICAL
PROPERTIES OF STRUCTURED NANOPARTICLE COMPOSITES 27 7 MEYER H. BIRNBOIM
AND WEI PING MA ENHANCED NONLINEAR OPTICAL RESPONSE OF COATED
NANOPARTICLES 283 N. KALYANIWALLA, J.W. HAUS, M.H. BIRNBOIM, R. INGUVA,
AND W.P. MA PART V: SILICON ALLOYS *OPTOELECTRONICS AND PHOTOVOLTAIC
APPLICATIONS OF MICROCRYSTALLINE SIC 291 Y. HAMAKAWA, Y. MATSUMOTO, G.
HIRATA, AND H. OKAMOTO THE EFFECT OF HYDROGEN ON THE STRUCTURE OF
AMORPHOUS AND MICROCRYSTALLINE SIC PREPARED BY THE POLYMER ROUTE 303 C-J
CHU, S-J. TING, F. BOBONNEAU, AND J.D. MACKENZIE POWER DENSITY EFFECTS
IN THE PHYSICAL AND CHEMICAL PROPERTIES OF SPUTTERED DIAMOND-LIKE CARBON
THIN FILMS 309 N.-H. CHO, K.M. KRISHNAN, D.K. VEIRS, M.D. RUBIN, C.B.
HOPPER, B. BHUSHAN, AND D.B. BOGY THE EFFECT OF HYDROGEN ON THE
STRUCTURE AND ELECTRICAL AND OPTICAL PROPERTIES OF SILICON-GERMANIUM
ALLOYS 315 CM. FORTMANN, D.E. ALBRIGHT, I.H. CAMPBELL, AND P.M. FAUCHET
RAMAN STUDIES OF MICROSTRUCTURAL CHANGES IN AMORPHOUS SILICON-BORON
ALLOYS DUE TO ANNEALING 321 G. YANG, P. BAI, Y.J WU, B.Y. TONG, S.K.
WONG, J. DU, AND I. HILL *INVITED PAPER PART VI: DEVICES AND
APPLICATIONS PREPARATION OF HIGH-QUALITY POLY-SI AND UC-SI FILMS BY THE
SPC METHOD 3 29 T. MATSUYAMA, M. NISHIKUNI, M. KAMEDA, S. OKAMOTO, M.
TANAKA, S. TSUDA, M. OHNISHI, S. NAKANO, AND Y. KUWANO CHARACTERISTICS
OF UC-SI:H FOR SI HETEROJUNCTION BIPOLAR TRANSISTORS 341 H. FUJIOKA, M.
ITO, AND K. TAKASAKI DOPANT SEGREGATION AT POLYCRYSTALLINE SILICON GRAIN
BOUNDARIES IN DEVICE FABRICATION PROCESSES 347 M. ITOH, I. AIKAWA, N.
HIRASHITA, AND T. AJIOKA CORRELATIONS BETWEEN OPTICAL, ELECTRICAL, AND
STRUCTURAL PROPERTIES OF IN-SITU PHOSPHORUS-DOPED HYDROGENATED
MICROCRYSTALLINE SILICON - EFFECTS OF RAPID THERMAL ANNEALING ON
MATERIAL PROPERTIES 35 3 DAVID E. KOTECKI, SHWU J. JENG, JERZY KANICKI,
CHRISTOPHER C. PARKS, WERNER RAUSCH, KRISHNA SESHAN, AND JEAN TIEN
SELECTIVE DEPOSITION OF N + DOPED MC-SI:H:F BY RF PLASMA CVD ON SI AND
SIO* SUBSTRATES 359 K. BAERT, P. DESCHEPPER, H. PATTYN, J. NIJS, AND R.
MERTENS SELECTIVE GROWTH OF SI CRYSTALS OVER AMORPHOUS SUBSTRATES SEEDED
BY SOLID-STATE AGGLOMERATION OF PATTERNED SI 3 65 K. YAMAGATA AND T.
YONEHARA CRYSTAL-AXIS-ROTATION OF LASER-RECRYSTALLIZED SILICON ON
INSULATOR 371 K. SUGAHARA, T. IPPOSHI, Y. INOUE, T. NISHIMURA, AND Y.
AKASAKA A NEW MODEL FOR THE POLY-SILICON THIN FILM TRANSISTOR TOR USE
WITH SPICE 377 M.J. IZZARD, P. MIGLIORATO, W.I. MILNE ELECTRICAL
PROPERTIES OF SIPOS FILMS DEPOSITED ON CRYSTALLINE SILICON 383 TIEN-MIN
CHUANG, KENNETH ROSE, AND RONALD J. GUTMANN DEVELOPMENT OF THE VERY THIN
MICROCRYSTALLINE N-LAYER AND ITS APPLICATION TO THE STACKED SOLAR CELL
389 F. NAKABEPPU, T. ISHIMURA, K. KUMAGAI, AND K. FUKUI AUTHOR INDEX 39
5 SUBJECT INDEX 397 MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS 401
*INVITED PAPER
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| illustrated | Illustrated |
| indexdate | 2024-07-09T17:42:59Z |
| institution | BVB |
| institution_GND | (DE-588)5055163-2 |
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| language | English |
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| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA Ed.: Philippe M. Fauchet ... Pittsburgh, Pa. Materials Research Soc. 1990 XI, 399 S. Ill., graph. Darst. 24 cm txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 164 Semiconductors Congresses Silicon crystals Congresses Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Mikrokristall (DE-588)4169828-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1989 Boston Mass. gnd-content Mikrokristall (DE-588)4169828-9 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Fauchet, Philippe M. edt Symposium on Materials Issues in Microcrystalline Semiconductors 1989 Boston, Mass. Sonstige (DE-588)5055163-2 oth Materials Research Society: Materials Research Society symposia proceedings 164 (DE-604)BV001899105 164 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006561581&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA Materials Research Society: Materials Research Society symposia proceedings Semiconductors Congresses Silicon crystals Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Mikrokristall (DE-588)4169828-9 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4169828-9 (DE-588)1071861417 |
| title | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA |
| title_auth | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA |
| title_exact_search | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA |
| title_full | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA Ed.: Philippe M. Fauchet ... |
| title_fullStr | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA Ed.: Philippe M. Fauchet ... |
| title_full_unstemmed | Materials issues in microcrystalline semiconductors symposium held November 29- December 1, 1989, Boston Massachusetts, USA Ed.: Philippe M. Fauchet ... |
| title_short | Materials issues in microcrystalline semiconductors |
| title_sort | materials issues in microcrystalline semiconductors symposium held november 29 december 1 1989 boston massachusetts usa |
| title_sub | symposium held November 29- December 1, 1989, Boston Massachusetts, USA |
| topic | Semiconductors Congresses Silicon crystals Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Mikrokristall (DE-588)4169828-9 gnd |
| topic_facet | Semiconductors Congresses Silicon crystals Congresses Halbleiterbauelement Mikrokristall Konferenzschrift 1989 Boston Mass. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006561581&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
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