Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1994
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 85 S. Ill., graph. Darst. |
Internformat
MARC
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| 245 | 1 | 0 | |a Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |c von Dajin Li |
| 264 | 1 | |c 1994 | |
| 300 | |a 85 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Hamburg-Harburg, Techn. Univ., Diss., 1994 | ||
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Datensatz im Suchindex
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|---|---|
| adam_text |
CONTENTS
1.
INTRODUCTION
3
2.
DIFFUSION
OF
GOLD
IN
SILICON
WITH
THE
RAPID
THERMAL
PROCESSING
5
2.1.
THE
RAPID
THERMAL
PROCESSING,
5
2.2.
DIFFUSION
OF
GOLD
IN
INTRINSIC
SILICON,
13
2.2.1.
THE
KICK-OUT
MECHANISM,
13
2.2.2.
THE
BOUNDARY
CONDITIONS,
16
2.2.3.
DIFFUSION
ENHANCEMENT
DURING
THE
NON
STEADY-STATE
CONDITION,
18
2.3.
DIFFUSION
OF
GOLD
IN
REAL
SI
BIPOLAR
TRANSISTORS,
23
2.3.1.
THE
PHOSPHORUS
GETTERING
EFFECT,
23
2.3.2.
THE
GOLD
DISTRIBUTION
IN
REAL
DEVICE
REGION,
28
2.3.3.
THE
RTP
AU-KI
11
PROCESS
AND
A
PROCESS
MODEL
FOR
GOLD
DIFFUSION
WITH
THE
RTP
EQUIPMENT,
32
3.
THE
EFFECT
OF
THE
GOLD
DISTRIBUTION
ON
THE
BEHAVIOR
OF
BIPOLAR TRANSISTORS
38
3.1.
THE
EFFECT
OF
THE
GOLD
DISTRIBUTION
ON
THE
TURN-OFF
BEHAVIOR,
38
3.2.
THE
EFFECT
OF
THE
GOLD
DISTRIBUTION
ON
THE
CURRENT
GAIN,
52
3.3.
SIMULATION
AND
DISCUSSION,
60
3.4.
EXPERIMENTATION
AND
DISCUSSION,
72
4.
CONCLUSIONS
80
ACKNOWLEDGEMENT
81
APPENDIX
82
REFERENCES
83
2 |
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| ctrlnum | (OCoLC)257820059 (DE-599)BVBBV009870962 |
| discipline | Physik Elektrotechnik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV009870962 |
| illustrated | Illustrated |
| indexdate | 2024-08-18T00:46:55Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006537393 |
| oclc_num | 257820059 |
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| owner | DE-91 DE-BY-TUM DE-29T DE-706 DE-83 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-706 DE-83 DE-188 |
| physical | 85 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
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| spelling | Li, Dajin Verfasser aut Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors von Dajin Li 1994 85 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Hamburg-Harburg, Techn. Univ., Diss., 1994 Silicium (DE-588)4077445-4 gnd rswk-swf Rapid thermal processing (DE-588)4347011-7 gnd rswk-swf Bipolartransistor (DE-588)4145669-5 gnd rswk-swf Diffusion (DE-588)4012277-3 gnd rswk-swf Gold (DE-588)4157819-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Rapid thermal processing (DE-588)4347011-7 s Gold (DE-588)4157819-3 s Diffusion (DE-588)4012277-3 s Silicium (DE-588)4077445-4 s Bipolartransistor (DE-588)4145669-5 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006537393&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Li, Dajin Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors Silicium (DE-588)4077445-4 gnd Rapid thermal processing (DE-588)4347011-7 gnd Bipolartransistor (DE-588)4145669-5 gnd Diffusion (DE-588)4012277-3 gnd Gold (DE-588)4157819-3 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4347011-7 (DE-588)4145669-5 (DE-588)4012277-3 (DE-588)4157819-3 (DE-588)4113937-9 |
| title | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |
| title_auth | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |
| title_exact_search | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |
| title_full | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors von Dajin Li |
| title_fullStr | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors von Dajin Li |
| title_full_unstemmed | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors von Dajin Li |
| title_short | Diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |
| title_sort | diffusion of gold in silicon with the rapid thermal processing for high speed bipolar switching transistors |
| topic | Silicium (DE-588)4077445-4 gnd Rapid thermal processing (DE-588)4347011-7 gnd Bipolartransistor (DE-588)4145669-5 gnd Diffusion (DE-588)4012277-3 gnd Gold (DE-588)4157819-3 gnd |
| topic_facet | Silicium Rapid thermal processing Bipolartransistor Diffusion Gold Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006537393&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT lidajin diffusionofgoldinsiliconwiththerapidthermalprocessingforhighspeedbipolarswitchingtransistors |