NASECODE VIII: proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Dublin
Boole Press
1992
|
| Ausgabe: | 1. ed. |
| Schriftenreihe: | Conference series
14 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 165 S. Ill., graph. Darst. |
Internformat
MARC
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| 111 | 2 | |a NASECODE Conference |n 8 |d 1992 |c Wien |j Verfasser |0 (DE-588)5145220-0 |4 aut | |
| 245 | 1 | 0 | |a NASECODE VIII |b proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria |c ed. by J. J. H. Miller |
| 250 | |a 1. ed. | ||
| 264 | 1 | |a Dublin |b Boole Press |c 1992 | |
| 300 | |a 165 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Conference series |v 14 | |
| 650 | 4 | |a Integrated circuits |x Design and construction | |
| 650 | 4 | |a Numerical analysis | |
| 650 | 4 | |a Semiconductors |x Design and construction | |
| 650 | 0 | 7 | |a Mathematisches Modell |0 (DE-588)4114528-8 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterbauelement |0 (DE-588)4113826-0 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Wien |2 gnd-content | |
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| 689 | 0 | 1 | |a Mathematisches Modell |0 (DE-588)4114528-8 |D s |
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| 700 | 1 | |a Miller, John J. |e Sonstige |0 (DE-588)106662562 |4 oth | |
| 830 | 0 | |a Conference series |v 14 |w (DE-604)BV002416027 |9 14 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006528978&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006528978 | ||
Datensatz im Suchindex
| _version_ | 1804124217255395328 |
|---|---|
| adam_text | CONTENTS
PART I: SESSIONS OF INVITED PAPERS
COMPUTATIONAL TECHNIQUES IN PROCESS AND DEVICE SIMULATION
Organized by:
Samad
Moini,
Kody
Varahramyan
Experiments with a parallel
3D
device simulator
3
S
Moini
Process and device simulation of a BiCMOS technology
5
S S
Furkay,
D C
Cole,
L C
Harris,
S A StOnge,
W
M Au
PROCESS MODELING AND
SIMULATION
Organized by:
Kody
Varahramyan,
Samad
Moini
Nonequilibrium point defects and diffusion in silicon
9
SMHu
Interactions between dopants and point-defects during nitridation processes
12
E
Vandenbossche,
В
Baccus
Accurate and computationally efficient modeling of ion implantation in single-crystal silicon
14
A F Tasch
The effect of a screening oxide on ion implantation studied by Monte Carlo simulations
16
G
Hobler,
H
Pötzl
Atomistic modeling of misfit dislocations in heterostrucrures
18
G R
Srinwasan,
A S Nandedkar, L R
Logan
Analytical simulation of stress dependent silicon oxidation
20
D
Couard,
В
Baccus
NEW METHODS FOR SOLVING THE BOLTZMANN EQUATION
Organized by:
N
Goldsman
A cumulant
expansion approach to solving the Boltzmann transport equation
22
X L
Wang,
C M Maziar
Deterministic particles simulations of the semiconductor Boltzmann equation
24
P
Degond
Infinite series expansion method of solving Boltzmann s equation
25
К
Hennacy,
N
Goldsman
An efficient, self-consistent method for calculating the distribution function for an entire device
27
H
Lin,
N
Goldsman,
1
D
Mayergoyz
Semiconductor transport based on the theory of stochastic differential equations
29
С
£
Korman,
I D Mayergoyz
A model for transient impact
ionisation
31
D C
Herbert
MONTE
CARLO PARTICLE SIMULATIONS
Organized by:
С
Moglestue
Monte Carlo particle modelling of quantum well lasers
33
С
Moglestue
Self consistent 2D Monte Carlo simulations of real and k-space transfer in HEMTs
34
R
W
Kebali,
R A
Abram
Monte Cario
study of current switching in heterostructure diode
36
A Reklaitis,
G Mykolaitis
MATHEMATICAL MODELLING OF CONDUCTIVITY IN SUPERTHIN LAYERS OF
SEMICONDUCTOR AND DIELECTRICS IN HIGH ELECTRIC FIELDS
Organized by:
G
V Gadiyak
Numerical simulation of the thermal oxidation of silicon
38
G
V Gadiyak,
J L Korobitsina,
V
I Kramarenko
MOPIT system for device and technology simulation
40
G
V Gadiyak,
Y P
Zhydkov,
V P
Ginkin,
A A Shimansky
New
zero-field
probes
for the
transport
dynamics of very hot electrons
42
F R
McFeely,
E
Cartier,
E
Eklund
Simulation
of quantum tunneling: transmission coefficient vs. Wigner function approaches
44
K L
Jensen, A K Ganguly
INDUSTRY USES OF SIMULATION
Organized by: Phil Oldiges
The use of simulations for
non
volatile memories design
46
C Bergonzoni
An efficient way of simulating lateral scaling effects of bipolar transistors
48
GAM Hurkx,
EPM Bladt
ADVANCED HYDRODYNAMIC TRANSPORT MODELS
Organized by: Tang-wei Tang
An improved hydrodynamic transport model for silicon extracted from self-consistent Monte
Carlo data
50
T
W
Tang,
S
Ramaswamy
Influence
of silicon bandstructure on transport coefficient models for hydrodynamic simulators
52
X L
Wang, V Chandramouli,
T
James
Bordeten,
С
M h/laziar, A F
Tasch
Jr
An extended Scharfetter-Gummel algorithm suitable for solving a nonparabolic hydrodynamic
transport model
54
D L
Woolard,
T
A Wnslow,
M
A Littlejohn,
R
ƒ
Trew
A globally convergent algorithm for solving energy balance equations
56
Q Lin, N
Goldsman
Simulation of band-structure dependent transport and impact
ioniza
tion
in semiconductor P-N
junctions using an improved multivalley hydrodynamic model
58
M Hamza, H
Morel,
J P
Chante
Thermionic emission in a hydrodynamic model for heterojunction structures
61
H
Hjelmgren, T
W Tang
PARTII: SOFTWARE FORUM
Organized
by: W
Crans
Program SUBHET
65
A Reklaitis
SIMPAR
-
II: a parameter optimization environment tuned for advanced model analysis
66
L
Lauwers,
L
Dupas,
К
De
Meyer
Amplifier design
automation and device properties: the Ampdes synthesis program
68
ƒ
Stoffeb,
С
Van Reeuwijk
The treatment of magnetic fields in the 2D process/device simulator TRENDY
74
В
Krabbenborg,
P
Wolbert,
T
Mouthaan,
H
Wallinga
SESES -
a two- and three- dimensional semiconductor sensor simulation program
76
E Anderheggen,
ƒ
G Korvink, G
Sartoris,
L
Fornera,
M
Roos,
H U
Schwarzenbach
Application
of S-PISCES2B to the simulation of novel GTO thyristor structure employing a
buried P+ grid
79
E
Murray,
G A
Armstrong
PART III: SESSIONS OF CONTRIBUTED PAPERS
COMPUTATIONAL TECHNIQUES
Multigrid methods for semiconductor device simulation
85
ƒ
Molenaar
Device model parameter extraction within a TCAD/EDA tramework: nutomation and
integration issues
87
W
Drangmeister,
D
Schroeder
Thermodynamic methods in microtransducer and electronic device modeling
89
G
Wachutka
Refinement strategy for semiconductor sensor simulations
91
M
Roos,
L
Fornera,
H U Schwarzenbach, E
Anderheggen,
J G Korvink, G Sartoris
Extrapolation techniques for improved convergence in semiconductor device simulation
94
W
H A
Schilders,
P
A Gough,
К
Whight
A new type of model for the transient response of MOSFETS
96
C Schmeiser
A mixed numerical technique for computing approximate solutions for the drift diffusion
semiconductor model
98
R K Sharma, J R
Rice
Modelling
solar
cell distributed sheet resistance phenomena
102
D
Križaj,
S Sokolie, S
Amon
PHYSICAL ASPECTS
A boundary condition for the
Poisson
equation at non-ideal metal-semiconductor contacts
105
D
Schroeder
Overshoot effects in the relaxation time approximation
107
G
Wolodkin,
} Frey
Simulation of interface coupling effects in ultra-thin silicon on insulator MOSFETs
109
A Hassetn-Bey,
S Cristoloveanu
Influence of anisotropic scattering on modelling of small-scale electron transport in compound
semiconductors 111
M C
Cheng
A new approach in device testing
114
D
Crosetto
MONTE
CARLO TECHNIQUES
Inclusion of eleetron-plasmon scattering in ensemble Monte Carlo simulations
121
N S
Mansour,
K F
Braman
Phase transitions in a one-dimensional Ising model with long range interaction using Monte
Carlo simulations
^23
А К
Bassioumf,
I Y
Isme,
A R Elfiqi
Ensemble Monte Carlo simulation of electron transport in GaAs N+ -N-N+ structures with
laterally varying doping
125
H
Tian,
К
W Kim,
M
A
Littkjohn,
U
K
Miśhra,
M
Hashemi
CIRCUIT
MODELLING
Time and frequency domain numerical physical modelling of two-terminal microwave
non-linear circuits
127
С
Dalle,
M R
Friscmń,
P A
Rolland
The forming and^arameters extraction of LSI subdrcuits macromodels for circuit simulation
129
S G
Rusekov,
S L
Шуатю
Signal
delay for generally interconnected distributed structures
131
C A MarinoO, P Natíaanmäki, J P Santanen
Circuit
simulation and measurement in an integrated environment
133
M
Koltm,
I
Eperjesi,
T
Horváth, P Illés
ENERGY TRANSPORT
MODELLING
Effects of lattice temperature in MOSFET analysis under non-isothermal conditions
135
H
НаџиѕШ,
R
Dang
A hydrodynamk transient model for high speed photodetectors
137
Z
M
Li,
К
W
От,
S P
МсАШег,
J G
Simmons
Coupled device-circuit simulation using energy-momentum device models
139
M
Sever
Simulation of quantum transport in electron waveguides using Wigner function model
140
H
TsucMya,
M
Ogmoa,
T
Mtyośtu
DEVICE MODELLING
Simulation of lay-out dependent electrical-thermal interaction in a bipolar power transistor
142
M Oœterbmn,
A
}
Mouthmn,
H
Boezen
Investigations of external circuit
influence
on internal 2-D behaviour of GTO thyristor during
turn-off process
147
M
Turawski, A Napierulski
Numerical analysis of trapping effects on kink behavior of GaAs MESFETs
149
К
Horto,
H
КиѕШ
Numerical modelling of GaAs/AlGaAs heterojunction-CCD s performance including
2DECS leakage
151
К
Ytmń, O Omota
Domain decomposition technique for semiconductor device simulation
154
í P
Boghev, V V Sirotkin
Two-diMeratonal numerical simulation of transdence floating gate EEPROMS
156
A Concantwn,
S
Keeney, A Mtdhemtm,
R
Be,
The simulation of
EPROM
and flash EMMsOM prc^rammmg using energy transport
158
S
Keeney, A Mathewmm,
L
Ramzzi,
R
Annunzmta
Two-dimensional electrothermal model of thyristor with shorted emitter
160
Z Lisik
PROCESS SIMULATION
On mesh adaption for the solution of semiconductor diffusion equations
162
К
Chen,
M
ƒ
Baines,
Ρ
К
Swehy
A modified Monte Carlo model for efficient ion implantation simulation
164
A F
Burenkov,
M M
Temkin,
T L
Cremile
|
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| genre | (DE-588)1071861417 Konferenzschrift 1992 Wien gnd-content |
| genre_facet | Konferenzschrift 1992 Wien |
| id | DE-604.BV009861109 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:42:09Z |
| institution | BVB |
| institution_GND | (DE-588)5145220-0 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006528978 |
| oclc_num | 154273662 |
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| physical | 165 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Boole Press |
| record_format | marc |
| series | Conference series |
| series2 | Conference series |
| spelling | NASECODE Conference 8 1992 Wien Verfasser (DE-588)5145220-0 aut NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria ed. by J. J. H. Miller 1. ed. Dublin Boole Press 1992 165 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Conference series 14 Integrated circuits Design and construction Numerical analysis Semiconductors Design and construction Mathematisches Modell (DE-588)4114528-8 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Wien gnd-content Halbleiterbauelement (DE-588)4113826-0 s Mathematisches Modell (DE-588)4114528-8 s DE-604 Miller, John J. Sonstige (DE-588)106662562 oth Conference series 14 (DE-604)BV002416027 14 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006528978&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria Conference series Integrated circuits Design and construction Numerical analysis Semiconductors Design and construction Mathematisches Modell (DE-588)4114528-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| subject_GND | (DE-588)4114528-8 (DE-588)4113826-0 (DE-588)1071861417 |
| title | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria |
| title_auth | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria |
| title_exact_search | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria |
| title_full | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria ed. by J. J. H. Miller |
| title_fullStr | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria ed. by J. J. H. Miller |
| title_full_unstemmed | NASECODE VIII proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria ed. by J. J. H. Miller |
| title_short | NASECODE VIII |
| title_sort | nasecode viii proceedings of the eighth international conference on the numerical analysis of semiconductor devices and integrated circuits may 19 22 1992 city club vienna austria |
| title_sub | proceedings of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, May 19 - 22, 1992, City Club, Vienna, Austria |
| topic | Integrated circuits Design and construction Numerical analysis Semiconductors Design and construction Mathematisches Modell (DE-588)4114528-8 gnd Halbleiterbauelement (DE-588)4113826-0 gnd |
| topic_facet | Integrated circuits Design and construction Numerical analysis Semiconductors Design and construction Mathematisches Modell Halbleiterbauelement Konferenzschrift 1992 Wien |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006528978&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002416027 |
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