VLSI fabrication principles: Silicon and Gallium arsenide
Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay...
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
New York u.a.
Wiley
1994
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Ausgabe: | 2. ed. |
Schriftenreihe: | A Wiley-Interscience publication
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Schlagworte: | |
Zusammenfassung: | Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay up-to-date over the long term By presenting a unified treatment of both elemental and compound semiconductor technologies, and by emphasizing the underlying principles that govern their behavior, this book gives students and practicing professionals the tools with which to stay up-to-date with the rapid changes in VLSI fabrication technology All chapters have been modified and expanded to reflect a growing understanding of VLSI fabrication processes and shifts in the direction of process technology. The chapter on Epitaxy, for instance, has been greatly expanded and a new section added on molecular beam epitaxy, while the section on liquid phase epitaxy has been shortened because of its diminished role in process technology. New material on dry etching techniques has been incorporated in the chapter on Etching and Cleaning |
Beschreibung: | Literaturangaben |
Beschreibung: | XXIV, 834 S. zahlr. graph. Darst. |
ISBN: | 0471580058 |
Internformat
MARC
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245 | 1 | 0 | |a VLSI fabrication principles |b Silicon and Gallium arsenide |c Sorab K. Ghandhi |
250 | |a 2. ed. | ||
264 | 1 | |a New York u.a. |b Wiley |c 1994 | |
300 | |a XXIV, 834 S. |b zahlr. graph. Darst. | ||
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490 | 0 | |a A Wiley-Interscience publication | |
500 | |a Literaturangaben | ||
520 | 3 | |a Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay up-to-date over the long term | |
520 | |a By presenting a unified treatment of both elemental and compound semiconductor technologies, and by emphasizing the underlying principles that govern their behavior, this book gives students and practicing professionals the tools with which to stay up-to-date with the rapid changes in VLSI fabrication technology | ||
520 | |a All chapters have been modified and expanded to reflect a growing understanding of VLSI fabrication processes and shifts in the direction of process technology. The chapter on Epitaxy, for instance, has been greatly expanded and a new section added on molecular beam epitaxy, while the section on liquid phase epitaxy has been shortened because of its diminished role in process technology. New material on dry etching techniques has been incorporated in the chapter on Etching and Cleaning | ||
650 | 4 | |a Gallium arsenide | |
650 | 4 | |a Integrated circuits |x Very large scale integration | |
650 | 4 | |a Silicon | |
650 | 0 | 7 | |a Fertigung |0 (DE-588)4016899-2 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a VLSI |0 (DE-588)4117388-0 |D s |
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Datensatz im Suchindex
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any_adam_object | |
author | Ghandhi, Sorab Khushro 1928- |
author_GND | (DE-588)1077173571 |
author_facet | Ghandhi, Sorab Khushro 1928- |
author_role | aut |
author_sort | Ghandhi, Sorab Khushro 1928- |
author_variant | s k g sk skg |
building | Verbundindex |
bvnumber | BV009832481 |
callnumber-first | T - Technology |
callnumber-label | TK7874 |
callnumber-raw | TK7874 |
callnumber-search | TK7874 |
callnumber-sort | TK 47874 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ZN 4950 |
classification_tum | ELT 355b ELT 270b |
ctrlnum | (OCoLC)29219815 (DE-599)BVBBV009832481 |
dewey-full | 621.3815/2 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/2 |
dewey-search | 621.3815/2 |
dewey-sort | 3621.3815 12 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 2. ed. |
format | Book |
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id | DE-604.BV009832481 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:41:41Z |
institution | BVB |
isbn | 0471580058 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006509983 |
oclc_num | 29219815 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | XXIV, 834 S. zahlr. graph. Darst. |
publishDate | 1994 |
publishDateSearch | 1994 |
publishDateSort | 1994 |
publisher | Wiley |
record_format | marc |
series2 | A Wiley-Interscience publication |
spelling | Ghandhi, Sorab Khushro 1928- Verfasser (DE-588)1077173571 aut VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi 2. ed. New York u.a. Wiley 1994 XXIV, 834 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier A Wiley-Interscience publication Literaturangaben Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay up-to-date over the long term By presenting a unified treatment of both elemental and compound semiconductor technologies, and by emphasizing the underlying principles that govern their behavior, this book gives students and practicing professionals the tools with which to stay up-to-date with the rapid changes in VLSI fabrication technology All chapters have been modified and expanded to reflect a growing understanding of VLSI fabrication processes and shifts in the direction of process technology. The chapter on Epitaxy, for instance, has been greatly expanded and a new section added on molecular beam epitaxy, while the section on liquid phase epitaxy has been shortened because of its diminished role in process technology. New material on dry etching techniques has been incorporated in the chapter on Etching and Cleaning Gallium arsenide Integrated circuits Very large scale integration Silicon Fertigung (DE-588)4016899-2 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf VLSI (DE-588)4117388-0 s Fertigung (DE-588)4016899-2 s DE-604 |
spellingShingle | Ghandhi, Sorab Khushro 1928- VLSI fabrication principles Silicon and Gallium arsenide Gallium arsenide Integrated circuits Very large scale integration Silicon Fertigung (DE-588)4016899-2 gnd VLSI (DE-588)4117388-0 gnd |
subject_GND | (DE-588)4016899-2 (DE-588)4117388-0 |
title | VLSI fabrication principles Silicon and Gallium arsenide |
title_auth | VLSI fabrication principles Silicon and Gallium arsenide |
title_exact_search | VLSI fabrication principles Silicon and Gallium arsenide |
title_full | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
title_fullStr | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
title_full_unstemmed | VLSI fabrication principles Silicon and Gallium arsenide Sorab K. Ghandhi |
title_short | VLSI fabrication principles |
title_sort | vlsi fabrication principles silicon and gallium arsenide |
title_sub | Silicon and Gallium arsenide |
topic | Gallium arsenide Integrated circuits Very large scale integration Silicon Fertigung (DE-588)4016899-2 gnd VLSI (DE-588)4117388-0 gnd |
topic_facet | Gallium arsenide Integrated circuits Very large scale integration Silicon Fertigung VLSI |
work_keys_str_mv | AT ghandhisorabkhushro vlsifabricationprinciplessiliconandgalliumarsenide |