Microcircuit engineering 92: proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany
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| Format: | Tagungsbericht Buch |
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| Sprache: | English |
| Veröffentlicht: |
Amsterdam u.a.
Elsevier
1993
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| Schriftenreihe: | Microelectronic engineering
21 |
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zs.-Bandes |
| Beschreibung: | 500 S. |
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| 245 | 1 | 0 | |a Microcircuit engineering 92 |b proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany |c ed. by Heiner Ryssel ... |
| 264 | 1 | |a Amsterdam u.a. |b Elsevier |c 1993 | |
| 300 | |a 500 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Microelectronic engineering |v 21 | |
| 500 | |a Einzelaufnahme eines Zs.-Bandes | ||
| 650 | 4 | |a Integrated circuits |x Very large scale integration |x Design and construction |v Congresses | |
| 650 | 4 | |a Microelectronics |v Congresses | |
| 650 | 4 | |a Microlithography |v Congresses | |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Erlangen |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Ryssel, Heiner |d 1941- |e Sonstige |0 (DE-588)108187802 |4 oth | |
| 711 | 2 | |a International Conference on Microfabrication |n 18 |d 1992 |c Erlangen |j Sonstige |0 (DE-588)5083704-7 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006509223&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006509223 | ||
Datensatz im Suchindex
| _version_ | 1804124186925334528 |
|---|---|
| adam_text | Contents
Optical lithography
1
N.
NOMURA,
К.
YAMASHITA,
M.
ENDO and
M. SASAGO
Lithography beyond
64
Mb
3
T. LESLIE, W.
ARDEN,
J.
BEN-JACOB,
D.
COLEMAN,
J. POLIMENI and
F. PREIN
Photolithography overview for
64
megabit production
11
J.M. HUTCHINSON, W.N.
PARTLO, R.
HSU and W.G. OLDHAM
213
nm lithography
15
M. OP
DE
BEECK, A. HISASUE, A. TOKUI,
H. KUSUNOSE, K. KAMON
and
H. MORIMOTO
Topographical masks: a new approach to increase the
DOF
on topographical
substrates
19
A.
GRASSMANN,
G.
ITTNER and S. WITTEKOEK
Production-worthy deep UV stepper for
0. 35
micron lithography
25
G. AMBLARD, A. WEILL and
С
STAUFFER
Advanced i-line lithography: processes for positive and negative patterning using
the same acid hardening resist
29
S. STALNAKER, P. LUEHRMANN, J. WAELPOEL,
С
SAGER
and P.
REYNOLDS
Focal plane determination for sub-half micron optical steppers
33
A. YEN, W.N. PARTLO, R.W McCLEARY and M.C. TIPTON
0. 25
μΐη
lithography using a deep-UV stepper with annular illumination
37
U. SENGUPTA, T. ISHIHARA, R.
SANDSTROM
and
С
REISER
Parametric studies of a spectrally narrowed KrF excimer laser for the deep UV
stepper
43
Y. MIMURA and S. AOYAMA
High-precision optical lithography for gate process using an antireflective under-
coating and local exposure dose control 47
G. CZECH, L. MADER, K.H.
KÜSTERS,
P.
KÜPPERS
and A.
GUTMANN
Reduction of linewidth variation for the gate conductor level by lithography based
on a new antireflective layer
51
R. HILD and G. NITZSCHE
Optical filtering as an alternative method to phase shifting
57
B. MARTIN and D. GOURLEY
The application of sputtered TiN on metallisation layers to optimise available
depth-of-field on high NA steppers 61
X-ray lithography
Contents
65
E
LOUIS
F. BIJKERK,
L
SHMAENOK, H.-J. VOORMA, M.J. VAN
DER WIEL,
R.
SCHLATMANN,
J.
VERHOEVEN, E.W.J.M. VAN DER DRIFT, J. ROMIJN,
B.A.C. ROUSSEEUW,
F. VOß,
R.
DESOR and B.
NIKOLAUS
Soft X-ray protection lithography using a high repetition rate laser-induced X-ray
source for sub-
100
nanometer lithography processes
67
T. TANAKA, M. FUTAGAMI, M. MORIGAMI, K. OKADA, S. FUJIWARA,
Y. YAMAOKA, M. HARADA, K. KANEDA, J. NISHINO and S. SUZUKI
Pattern replication accuracy in
1
:1 SR lithography
71
K. KONDO, M. NAKAISHI, M. YAMADA, M. YAMABE and K. SUGISHIMA
Stress stabilization of tantalum absorbers on X-ray masks
75
D.E.
ANDREWS and C.N. ARCHIE
Early operating experience with the Helios compact synchrotron X-ray source
79
S.C. NASH,
C. BLÁSING-BANGERT
and K.-D.
ROTH
Pattern placement metrology on X-ray masks
83
I. HIGASHIKAWA, K.
KOGA,
T.
TANAKA,
M.
MORIGAMI and
T. ITOH
Linewidth control in
1:1
SR lithography
87
G. MESSINA, A. PAOLETTI,
S. SANTANGELO
and A. TUCCIARONE
Electron scattering of diamond membranes in X-ray mask fabrication
91
I.C.E. TURCU, I.N. ROSS, A. HENING, M. STEYER, B. SOOM, J.G. WATSON
and P. HERMAN
X-ray lithography with efficient picosecond KrF laser-plasma source at
1
nm
wavelength
95
V. WHITE, S. BAJIKAR, D.
DENTÓN,
F.
CERRINA,
В.
LAI,
W.B. YUN,
D.
LEGNINI,
Y.
XIAO,
J. CHRZAS,
E. DIFABRIZIO,
L.
GRELLA and
M. BACIOCCHI
Microfabrication
of phase shifting zone plates for hard X-rays
99
F. CERRINA, F. BASZLER, S. TURNER and M. KHAN
TRANSMIT: a beamline modelling program
103
J.R. MALDONADO, M. KRISHNAN, R.
PRASAD,
P. GREENE, H.K. OERTEL
and M. WEISS
Effect of cylindrical spot shape in gas plasma sources for X-ray lithography
107
J.R. MALDONADO,
I. BABICH,
L.C.
HSIA,
R.
RIPPSTEIN,
Α.
FLAMHOLZ
and
V. DIMILIA
Measurement of the effective wavelength of X-ray lithography sources
113
J.
SCHULZ,
A. EL-KHOLI, J.
GÖTTERT,
K. KADEL and J. MOHR
The influence of sloped absorber sidewalls in deep X-ray lithography
117
K. KADEL, W.K. SCHOMBURG and G. STERN
X-ray masks with tungsten absorbers for use in the
LIGA
process
123
Electron beam lithography
127
T.H.P. CHANG, L.P. MURAY,
U. STAUFER
and D.P. KERN
Arrayed miniature electron beam columns
129
P.B. FISCHER and S.Y.
CHOU
High resolution electron beam lithography and high accuracy overlay
usina
а
modified
SEM 141
Contents
H. ITOH, M.
SASAKI,
H.
TODOKORO,
Y.
SOHDA,
Y. NAKAYAMA
and
N. SAITOU
Е
-beam correction methods for cell projection optical system
145
T. KIUCHI, A. YAMADA, Y. TAKAHASHI, Y. OAE, M.
NAKANO,
J
ΚΑΙ,
Η.
YASUDA and
К.
KAWASHIMA
Accuracy of exposure during continuous stage movement in a variable shaped
vector scanning electron beam lithography system
149
В. КОЕК,
R.
GRANT,
L
HAAS,
В.
JENNINGS and
В.
WALLMAN
Meeting the pattern definition challenge of 256MBit DRAM X-ray masks
153
С
KÖHLER,
W.
BRÜNGER,
Ch.
EHRLICH,
H.
HUBER
and K.
REIMER
Application
of
е
-beam nanolithography for absorber structuring of high resolution
X-ray masks
159
G. MATSUOKA, T. IWASAKI, H.
ANDOU
and Y. MINAMIDE
Mark detection in electron beam lithography using evaluation of wave signal
symmetry
165
H. ELSNER and P. HAHMANN
Phase shift mask making by
е
-beam lithography
169
S.V.
BABIN,
I. KOSTIC and P. HUDEK
Experimental investigation of the resist heating effect in a variably shaped EBL
system
173
Ion beams
177
J.M. LINDQUIST, R.J. YOUNG and M.C. JAEHNIG
Recent advances in application of focused ion beam technology
179
G. STENGL, G.
BOSCH,
A. CHALÚPKA, J.
FEGERL,
R.
FISCHER,
G.
LAMMER,
H.
LÖSCHNER,
L. MALEK, R.
NOWAK,
C.
TRAHER
and P. WOLF
Ion projector distortion stability and wafer exposures under electronic alignment
( pattern lock ) conditions
187
P.D.
PREWETT, A.W. EASTWOOD, G.S. TURNER and J.G. WATSON
Gallium staining in FIB repair of photomasks
191
L. BISCHOFF, E. HESSE, G.
HOFMANN,
F.K. NAEHRING, W. PROBST,
B. SCHMIDT and J. TEICHERT
High current FIB system for micromechanics application
197
R. HILL, J.C. MORGAN, R.G. LEE and T. OLSON
FIB endpoint detection and depth resolution
201
R. MIMURA, H. SAWARAGI, R. AIHARA and M. TAKAI
Design of a
200
kV
FIB system with a liquid metal ion source for
1С
process
inspection
F.C.
VAN
DEN HEUVEL, M.H.F. OVERWIJK, E.M. FLEUREN,
Η.
LAISINA
and
K.J. SAUER
Focused-ion-beam-induced tungsten deposition for
1С
repair
209
H. SAYAMA, S.
HARA,
Η.
ANDOH,
Η.
KIMURA,
Υ.
OHNO,
S.
SATOH and
M.
TAKAI
Soft-error immunity evaluation of DRAM using high-energy nuclear
microprobe
213
T.
OZAKI,
Y.H.
HISAOKA and H. MURAKAMI
Approximation formula for parasitic aberrations due to mechanical defects of an
electrostatic deflector 217
Resists
Contents
221
H S.
SACHDEV, J.R. WHITAKER and K.G. SACHDEV
New silicon containing positive resist and its applications for sub-half micron
lithography 223
A. WEILL, G. AMBLARD, F. DEBAENE and D. SAGE
Resist polarity changes during the silylation process
227
G.S.
CALABRESE,
J.F.
BOHLAND, E.K. PAVELCHEK, R.
SINTA,
B.W.
DUDLEY,
S.K. JONES and P.W. FREEMAN
Process enhancements for positive tone silylation
231
H.W.P.
KOOPS,
В.
FISCHER and T. KERBER
Endpoint
detection for silylation processes with waveguide modes
235
A.M. GOETHALS, K.H. BAIK, K. RONSE, L. VAN DEN HOVE and B. ROLAND
Stability of silylated images for application to dry developable deep-UV lithog-
raphy
239
G. STANGL, E. CEKAN, Ch.
ECKES,
W.
FRIZA,
F. THALINGER,
Α.
BRUCKNER, P. HUDEK and
W.
FALLMANN
Newly developed novolak-based resist materials for ion projection lithography
(IPL) with structure dimensions of
200-100
nanometers
245
A. WEILL,
0.
JOUBERT, P.
PANIEZ,
F.
DEBAENE,
M.
PONS and
D.
SAGE
Melt flow of the silylated areas during the DESIRE process
251
R. LEUSCHNER, H.
AHNE,
U.
MARQUARDT,
U.
NICKEL,
E.
SCHMIDT,
M.
SEBALD and R. SEZI
Patterning of organic layers using negative and positive working Top-CARL
process
255
W.-A. LOONG, M.-S. YEN, F.-C. WANG, B.-Y. HSU and Y.-L. LIU
Enhanced O2 plasma stripping of P+and Si+implanted negative resist by H2
plasma
pretreatment
259
E.
GOGOLIDES,
К.
YANNAKOPOULOU, A.G. NASSIOPOULOS,
E.
TSOIS and
M. HATZAKIS
Characterization of a positive-tone wet silylation^precess with the AZ
5214™
photoresist
263
W. SPIESS, H.
RÖSCHERT,
H. WENGENROTH and G. PAWLOWSKI
Application aspects of a positive tone deep UV resist
267
#.
EL-KHOLI, P. BLEY, J.
GÖTTERT
and J. MOHR
Examination of the solubility and the molecular weight distribution of PMMA in
view of an optimised resist system in deep etch X-ray lithography
271
T. KERBER and H.W.P.
KOOPS
Surface imaging with HMCTS on SAL-resists, a dry developable electron beam
process with high sensitivity and good resolution
275
K. BELL, S. DIXIT, R. KAUTZ, T.
KOES,
R.
LAZARUS and
G. TALOR
Reduced photoresist scumming tendencies through the optimization of photore¬
sist formulation parameters
279
P. HUDEK, Z. BORKOWICZ, I. KOSTIC, I.W. RANGELOW and R. KASSING
Single-layer resist for deep, micro- and nanometer structure transfer
283
I. RAPTIS,
N.
GLEZOS and M. HATZAKIS
Use of the Boltzmann transport equation for the evaluation of energy deposition
in the case of electron sensitive resist films over composite substrates
289
Contents
S.V. DUBONOS, B.N. GAIFULLIN, H.F. RAITH, A.A. SVINTSOV and S.l.
ZAITSEV
Evaluation,
verification and error determination of proximity parameters
α, β
and
η
in electron beam lithography
293
G. TEMMEL and H. RYSSEL
A novel end point detection technique for in situ development of photoresist
297
Pattern transfer
301
H. ARIMOTO, H. KITADA, Y. SUGIYAMA, A. TACKEUCHI, A. ENDO and
S.
MUTO
10-nm-wire fabrication in GaAs/AIGaAs MQWs by Cl2 reactive ion beam etching
using SiO2 sidewall masks
303
T. KOSUGI, H. IWASE and K.
GAMO
The characteristics of ion beam assisted etching of GaAs by pulsed focused ion
beam irradiation
307
P.B. FISCHER and S.Y.
CHOU
RIE
of sub-50 nm high aspect-ratio pillars, ridges, and trenches in silicon and
silicon-germanium
311
P.A.F. HERBERT, M. MURTAGH, P.V. KELLY, G.M.
CREAN
and W.M. KELLY
On-line detection and monitoring of plasma etch damage to semi-insulating GaAs
315
G.
MENEGHINI,
L. BOSCHIS, C. CORIASSO, A. STANO, M.
GENTILI,
L. GRELLA and M. FIGLIOMENI
CH4/H2
RIE
of InGaAsP/lnP materials: An application to
DFB
laser fabrication
321
K. BÖRNIG
and J. PELKA
Simulation of time depending particle transport during dry etch process
325
P. VERDONCK,
G. BRASSEUR
and J. SWART
Reactive ion etching and plasma etching of tungsten
329
J.
HOMMEL,
D. OTTENWÄLDER, V. HÁRLE,
F. SCHNEIDER,
A. MENSCHIG,
F. SCHOLZ
and H.
SCHWEIZER
Special
angle technique with Ar/O^RIBE for the fabrication of steep nm-scale
profiles in InGaAsP/lnP and subsequent epitaxial overgrowth
333
V.J.
LAW,
G.A.C.
JONES, D.A. RITCHIE and M. TEWORDT
Optical emission spectroscopy of plasma etching of GaAs and InP
337
Y.X. LI, M. LAROS, P.M.
SARRO,
P.J. FRENCH and R.F. WOLFFENBUTTEL
Plasma etching of polysilicon/nitride/polysilicon sandwich structure for sensor
applications 341
R. GERMANN,
S. HAUSSER
and J.-P. REITHMAIER
Reactive ion etching of InAIAs with Ar/CI-, mixtures for ridge waveguide lasers
345
D.J. PAUL, J.R.A. CLEAVER and H. AHMED
Fabrication of wires in silicon germanium material
349
Testing 353
T. ANBE, K. OKUBO, H. TEGUFtl and
A. ITO
Automatic measurement with an electron beam tester
355
Contents
I.W. RANGELOW,
V.
LAHR, R. KASSING,
С
BLÄSING-BANGERT, K.-D. ROTH,
G. BOSCH,
A. CHALÚPKA, R.
FISCHER,
H.
LÖSCHNER,
R.
NOWAK,
С.
TRAHER,
G. STENGL, H.
KRAUS
and E.
BAYER
Distortion evaluation of nickel stencil masks with the help of ion proximity
exposures and registration measurements on the Leitz LMS-2000
359
I.
SCHÖNSTEIN,
J.
MÜLLER,
U. HILLERINGMANN and K. GOSER
Characterization of
submicron NMOS
devices due to visible light emission
363
G.S. DAVIES and R.J.
HOLWILL
An investigation into the effects of a path length offset on a coherence probe
microscope 367
K.
URA,
A. TAKAOKA, K. YOSHIDA and J.
WADA
Observation of local crystal orientation variation of
Al line
due to LSI processing
by using two-million-volts electron microscope
371
L.
FREY,
W.
ERGELE,
T.
FALTER,
L. GONG and H.
RYSSEL
Analysis of microstructured samples by focused ion beam sample preparation
375
Submicron
devices
379
E.
GÓRNIK
Future nanometer electronics
381
H. ROTHUIZEN, P. ROENTGEN and
N.
BUCHÁN
Lateral down-scaling of selective area MOVPE-grown GalnAs/lnP wires and dots
389
A.
HÜLSMANN,
P. ROMAN, J.
BRAUNSTEIN,
G.
KAUFEL,
К.
KÖHLER
and
T.
JAKOBUS
Fabrication
and performance of 1-dim MODFETs
393
Ch.
GRÉUS,
A. ORTH, F. DAIMINGER, L. BUTOV, J.
STRAKA
and A.
FORCHEL
Optical studies of barrier modulated InGaAs/GaAs quantum wires
397
B. JACOBS, H. ZULL, A. FORCHEL, I. GYURO, P. SPEIER, E. ZIELINSKI and
P.
RÖNTGEN
Comparison of the sidewall recombination in dry and wet etched InGaAs/lnP
wires
401
С
DE GRAAF,
J.
CARO,
K.
HEYERS
and S.
RADELAAR
Dual-gate nanostructured silicon MOSFETs: fabrication and low temperature
characterization
405
CM. REEVES, S.J. WIND, F.J.
HOHN,
J.J. BUCCHIGNANO, Y.T.
LII
and
D.P. KLAUS
Fabrication and characterization of compact
100
nm scale metal oxide semi¬
conductor field effect transistors
409
T. MIKOLAJICK and H. RYSSEL
Influence of statistical dopant fluctuations on
MOS
transistors with deep sub-
micron channel lengths
419
M.N. WEBSTER, A.H.
VERBRUGGEN, H.F.F.
JOS,
J. ROMIJN, P.M.A.
MOORS
and S.
RADELAAR
Patterning of a Ti/R/Au metallization for
submicron
bipolar transistors made by
direct write
е
-beam lithography
423
M. NIAZMAND, D.
FRIEDRICH
and W.
WINDBRACKE
Shallow junction formation by dopant outdiffusion from CoSi2 and its application
in sub
0. 5
ц.т
MOS
processes
427
Contents
C.
SHEARWOOD,
H.
AHMED,
L.M.
NICHOLSON,
J.A.C.
BLAND, M.J. BAIRD
M.
PATEL
and HP. HUGHES
Fabrication and magnetisation measurements of variable-pitch gratings of cobalt
on GaAs
431
S.J.M. BAKKER, B.A.C. ROUSSEEUW, E. VAN
DER DRIFT,
T.M. KLAPWIJK
and S.
RADELAAR
Fabrication
of Si-coupled three terminal superconducting device using selective
deposition of
ß-W 435
S.L. WANG, S.
BAKKER, T.M. KLAPWIJK
and
P.C.
VAN SON
Submicron
gaps on high mobility Si-MOSFETs: a flexible tool for electron
transport studies
439
Microfabrication
443
A. HEUBERGER
Silicon microsystems
445
D.F. MOORE, A.C.F. HOOLE and A. HEAVER
Microfabrication
of freestanding
microstructures
459
B.
LÖCHEL,
Α.
MACIOSSEK,
Μ.
KÖNIG,
H.
-L.
HUBER and
G.
BAUER
Fabrication
of magnetic
microstructures
by using thick layer resists
463
D. PETERS, W.
BARTSCH,
D.
STEPHANI,
C.E.
HOLLAND and
CA. SPINDT
Fabrication of
0. 4
μηη
grid apertures for field-emission array cathodes
467
A.
STEMMER,
Η.
ZARSCHIZKY,
E.
KNAPEK,
G.
LEFRANC and
H. SCHERER-
WINNER
Design and fabrication of multilevel diffractive optical elements (DOEs) and
holographic optical elements (HOEs)
471
W. PATRICK,
С
BERGAMASCHI
and Hp. MEIER
Integrated circuits on If I
—
V semiconductors
-
A low cost, reliable technology for
university environments
475
W.
LANGHEINRICH,
В.
SPANGENBERG,
R.
BARTH
and H.
KURZ
Superconducting
submicron
bridges fabricated by electron beam lithography and
dry etching
..
479
A. KOHL, R. ZENGERLE, H.J. BRUCKNER, H.J. OLZHAUSEN, R.
MULLER
and
K.
HEIME
Fabrication of buried InP/lnGaAsP waveguide-wires for use in optical beamwidth
transformers 483
Author index 487
|
| any_adam_object | 1 |
| author_GND | (DE-588)108187802 |
| building | Verbundindex |
| bvnumber | BV009831624 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_tum | ELT 270f |
| ctrlnum | (OCoLC)29591488 (DE-599)BVBBV009831624 |
| discipline | Elektrotechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1992 Erlangen gnd-content |
| genre_facet | Konferenzschrift 1992 Erlangen |
| id | DE-604.BV009831624 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T17:41:40Z |
| institution | BVB |
| institution_GND | (DE-588)5083704-7 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006509223 |
| oclc_num | 29591488 |
| open_access_boolean | |
| owner | DE-29T DE-83 |
| owner_facet | DE-29T DE-83 |
| physical | 500 S. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| publisher | Elsevier |
| record_format | marc |
| series2 | Microelectronic engineering |
| spelling | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany ed. by Heiner Ryssel ... Amsterdam u.a. Elsevier 1993 500 S. txt rdacontent n rdamedia nc rdacarrier Microelectronic engineering 21 Einzelaufnahme eines Zs.-Bandes Integrated circuits Very large scale integration Design and construction Congresses Microelectronics Congresses Microlithography Congresses Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Erlangen gnd-content Halbleitertechnologie (DE-588)4158814-9 s DE-604 Ryssel, Heiner 1941- Sonstige (DE-588)108187802 oth International Conference on Microfabrication 18 1992 Erlangen Sonstige (DE-588)5083704-7 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006509223&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany Integrated circuits Very large scale integration Design and construction Congresses Microelectronics Congresses Microlithography Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)1071861417 |
| title | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany |
| title_auth | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany |
| title_exact_search | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany |
| title_full | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany ed. by Heiner Ryssel ... |
| title_fullStr | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany ed. by Heiner Ryssel ... |
| title_full_unstemmed | Microcircuit engineering 92 proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany ed. by Heiner Ryssel ... |
| title_short | Microcircuit engineering 92 |
| title_sort | microcircuit engineering 92 proceedings of the international conference on microfabrication september 21 24 1992 erlangen germany |
| title_sub | proceedings of the International Conference on Microfabrication, September 21 - 24, 1992, Erlangen, Germany |
| topic | Integrated circuits Very large scale integration Design and construction Congresses Microelectronics Congresses Microlithography Congresses Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Integrated circuits Very large scale integration Design and construction Congresses Microelectronics Congresses Microlithography Congresses Halbleitertechnologie Konferenzschrift 1992 Erlangen |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006509223&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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