Optical effects of ion implantation:
Gespeichert in:
Hauptverfasser: | , , |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Cambridge [u.a.]
Cambridge Univ. Press
1994
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Ausgabe: | 1. publ. |
Schriftenreihe: | Cambridge studies in modern optics
13 |
Schlagworte: | |
Online-Zugang: | Inhaltsverzeichnis |
Beschreibung: | XIV, 280 S. graph. Darst. |
ISBN: | 0521394309 |
Internformat
MARC
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250 | |a 1. publ. | ||
264 | 1 | |a Cambridge [u.a.] |b Cambridge Univ. Press |c 1994 | |
300 | |a XIV, 280 S. |b graph. Darst. | ||
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650 | 4 | |a Ion implantation | |
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Datensatz im Suchindex
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adam_text | OPTICAL EFFECTS OF ION IMPLANTATION P. D. TOWNSEND, P. J. CHANDLER AND
L. ZHANG SCHOOL OF MATHEMATICAL AND PHYSICAL SCIENCES UNIVERSITY OF
SUSSEX 1 CAMBRIDGE UNIVERSITY PRESS CONTENTS PREFACE 1 1.1 1.2 1.2.1
1.2.2 1.2.3 1.2.4 1.3 1.3.1 1.3.2 1.3.3 1.3.4 1.3.5 1.3.6 1.4 1.5 1.6
1.7 AN OVERVIEW OF ION IMPLANTATION DEVELOPMENT OF ION IMPLANTATION
PROPERTIES INFLUENCED BY ION IMPLANTATION MECHANICAL AND CHEMICAL
PROPERTIES ELECTRICAL PROPERTIES OPTICAL PROPERTIES OPTICAL PROPERTIES
CONTROLLED BY SURFACE LAYERS PROCESSES OCCURRING DURING ION IMPLANTATION
NUCLEAR COLLISIONS AND HIGH DEFECT DENSITIES POINT DEFECTS AND
ELECTRONIC INTERACTIONS SYNERGISTIC EFFECTS RADIATION ENHANCED DIFFUSION
THERMAL EFFECTS COMPOSITIONAL EFFECTS A SUMMARY OF THE ADVANTAGES OF ION
BEAM PROCESSING PATTERN DEFINITION ENERGY AND DOSE REQUIREMENTS SUMMARY
OF IMPLANTATION EFFECTS REFERENCES 2 2.1 2.1.1 2.1.2 2.1.3 2.1.4 2.1.5
2.2 ION RANGES, DAMAGE AND SPUTTERING PREDICTIONS OF RANGE DISTRIBUTIONS
NUCLEAR COLLISIONS DIFFERENTIAL CROSS-SECTION ELECTRONIC STOPPING
SUMMARY OF NUCLEAR AND ELECTRONIC STOPPING ION RANGE DISTRIBUTIONS
DAMAGE DISTRIBUTIONS PAGE XIII 1 1 4 5 6 8 10 11 12 14 14 14 16 17 18 20
21 21 22 24 24 27 29 31 33 34 35 VLL VLLL CONTENTS 2.2.1 2.2.2 2.2.3
2.2.4 2.2.5 2.2.6 2.2.7 2.2.8 2.2.9 2.3 2.4 2.5 2.5.1 2.5.2 2.5.3 2.5.4
ELECTRONIC DEFECT FORMATION DISPLACEMENT THRESHOLD EFFECTS DIFFUSION,
RELAXATION AND AMORPHISATION STABILITY OF AMORPHISED LAYERS
AMORPHISATION OF SEMICONDUCTORS STABILITY OF POINT AND CLUSTER DEFECTS
DEFECT DIFFUSION AND CRYSTALLOGRAPHY STRUCTURAL AND COMPOSITIONAL
CHANGES CONCLUSIONS ON DAMAGE DISTRIBUTIONS CHANNELLING SPUTTERING
COMPUTER SIMULATIONS SIMULATION APPROACHES MOLECULAR DYNAMICS BOLTZMANN
TRANSPORT EQUATION STATE OF SIMULATION PROGRAMS REFERENCES 3 3.1 3.2 3.3
3.4 3.5 3.5.1 3.5.2 3.5.3 3.6 3.7 3.8 3.9 3.10 3.11 3.12 3.12.1 OPTICAL
ABSORPTION ANALYSIS METHODS USING ABSORPTION, ESR AND RBS IN SITU
OPTICAL ABSORPTION CRYSTALLOGRAPHIC EFFECTS ON STRESS AND DEFECT MOTION
SAPPHIRE ALKALI HALIDES F AND F 2 CENTRES F 3 , F 2 AND F 3 BANDS
OTHER FEATURES DEFECT COMPLEXES GROWTH CURVES MOLECULAR BEAM EFFECTS ON
ABSORPTION ISOTOPIC AND ION SPECIES EFFECTS MEASUREMENT OF OSCILLATOR
STRENGTH ESR AND ENDOR HIGH DOSE EFFECTS AMORPHISATION 3.12.2 COLLOIDS
3.12.3 3.13 PRECIPITATE PHASES SUMMARY OF PROBLEMS IN INTERPRETATION
REFERENCES 4 4.1 LUMINESCENCE LUMINESCENCE PROCESSES 38 39 39 47 47 49
51 52 54 55 57 62 63 65 66 66 67 70 70 71 75 77 83 85 88 89 90 93 95 100
101 103 103 103 105 108 109 112 115 115 CONTENTS 4.2 LUMINESCENCE DURING
ION IMPLANTATION 4.3 EFFECTS OF IMPLANTATION TEMPERATURE 4.4 IN SITU
LUMINESCENCE 4.4.1 ALKALI HALIDES - EXCITONS 4.4.2 ALKALI HALIDES - A
SEARCH FOR BI-EXCITONS 4.4.3 CAF 2 4.4.4 SILICA 4.4.5 SAPPHIRE 4.4.6
LINBCB - IMPURITY AND STOICHIOMETRIC EFFECTS 4.4.7 LINB0 3 - EXCITONS
4.4.8 SURFACE IMPURITY EMISSION 4.4.9 SOLID ARGON 4.4.10 SUMMARY OF IN
SITU LUMINESCENCE EFFECTS 4.5 PHOTOLUMINESCENCE 4.5.1 LUMINESCENCE OF
NAF 4.5.2 SYNTHESIS OF NEW SEMICONDUCTOR ALLOYS 4.5.3 DIVACANCIES IN
SAPPHIRE 4.6 WAVEGUIDE LASERS 4.7 THERMOLUMINESCENCE 4.7.1 SILICA AND
QUARTZ 4.7.2 CAF 2 4.7.3 LIF DOSIMETERS 4.8 IMPURITY DOPING OF CAO 4.9
CATHODOLUMINESCENCE 4.10 DEPTH EFFECTS REFERENCES 5 ION IMPLANTED
WAVEGUIDE ANALYSIS 5.1 CHARACTERISTICS OF ION IMPLANTED WAVEGUIDES 5.2
WAVEGUIDE MODE THEORY 5.2.1 MAXWELL EQUATION APPROACH 5.2.2 QUANTUM
MECHANICS ANALOGY 5.3 WAVEGUIDE COUPLING 5.3.1 END COUPLING 5.3.2 PRISM
COUPLING 5.4 INDEX PROFILE DETERMINATION 5.4.1 WKB APPROXIMATION FOR A
GRADED INDEX PROFILE 5.4.2 ION IMPLANTED OPTICAL BARRIER WAVEGUIDES
5.4.3 REFLECTIVITY CALCULATION METHOD (RCM) 5.4.4 INDEX PROFILE
CHARACTERISATION 5.4.5 EXAMPLES OF REFRACTIVE INDEX PROFILE FITTED BY
USIN X 5.4.6 5.5 5.5.1 5.5.2 CONTENTS THIN FILM REFLECTIVITY METHOD
PLANAR WAVEGUIDE ATTENUATION PRISM METHODS INSERTION LOSS REFERENCES 6
6.1 6.1.1 6.1.2 6.1.3 6.2 6.3 6.4 6.5 6.5.1 6.5.2 6.5.3 6.6 6.7 6.8
6.8.1 6.8.2 6.9 6.10 6.11 6.12 6.13 6.14 ION IMPLANTED OPTICAL
WAVEGUIDES PRACTICAL WAVEGUIDE STRUCTURES CONVENTIONAL FABRICATION
METHODS FABRICATION BY ION IMPLANTATION STRUCTURAL EFFECTS CHEMICALLY
FORMED ION IMPLANTED WAVEGUIDES SUMMARY OF EFFECTS OF ION IMPLANTATION
ON INDEX MATERIALS EXHIBITING INDEX CHANGES CRYSTALLINE QUARTZ NIOBATES
LITHIUM NIOBATE OPTICAL DAMAGE IN LITHIUM NIOBATE OTHER NIOBATES
TANTALATES BISMUTH GERMANATE LASER HOSTS GARNETS OTHER LASER SUBSTRATES
NON-LINEAR MATERIALS OTHER CRYSTALLINE MATERIALS NON-CRYSTALLINE
MATERIALS COMBINATION WITH CONVENTIONAL TECHNIQUES ION IMPLANTED
CHEMICAL WAVEGUIDES SUMMARY OF PROGRESS SO FAR REFERENCES 7 7.1 7.1.1
7.1.2 7.1.3 7.2 7.2.1 7.2.2 7.2.3 7.3 7.3.1 APPLICATIONS OF ION
IMPLANTED WAVEGUIDES WAVEGUIDE CONSTRUCTION TECHNIQUES CHANNEL
WAVEGUIDES OPTICAL WRITING DOUBLE BARRIER IMPLANTS ION IMPLANTED
WAVEGUIDE LASERS SPECTROSCOPIC EFFECTS PLANAR WAVEGUIDE LASER
PERFORMANCE CHANNEL WAVEGUIDE LASERS FREQUENCY DOUBLING QUARTZ 183 189
190 192 194 196 197 197 198 200 201 202 202 207 207 213 215 217 219 222
222 226 228 232 233 238 238 241 242 247 248 248 251 253 255 259 260 263
264 265 CONTENTS XI 7.3.2 POTASSIUM NIOBATE 266 7.3.3 POTASSIUM TITANYL
PHOSPHATE 270 7.4 PHOTOREFRACTIVE EFFECTS 272 7.5 FUTURE AND RELATED
APPLICATIONS 275 REFERENCES 277 INDEX 279
|
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author | Townsend, Peter D. Chandler, P. J. Zhang, L. |
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discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
edition | 1. publ. |
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id | DE-604.BV009757969 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:40:22Z |
institution | BVB |
isbn | 0521394309 |
language | English |
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physical | XIV, 280 S. graph. Darst. |
publishDate | 1994 |
publishDateSearch | 1994 |
publishDateSort | 1994 |
publisher | Cambridge Univ. Press |
record_format | marc |
series | Cambridge studies in modern optics |
series2 | Cambridge studies in modern optics |
spelling | Townsend, Peter D. Verfasser aut Optical effects of ion implantation P. D. Townsend, P. J. Chandler and L. Zhang 1. publ. Cambridge [u.a.] Cambridge Univ. Press 1994 XIV, 280 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Cambridge studies in modern optics 13 Ions - Implantation ram Matériaux - Propriétés optiques ram Ion implantation Materials Optical properties Optik (DE-588)4043650-0 gnd rswk-swf Optische Eigenschaft (DE-588)4123887-4 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 s Optik (DE-588)4043650-0 s DE-604 Optische Eigenschaft (DE-588)4123887-4 s Chandler, P. J. Verfasser aut Zhang, L. Verfasser aut Cambridge studies in modern optics 13 (DE-604)BV004081392 13 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006454720&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Townsend, Peter D. Chandler, P. J. Zhang, L. Optical effects of ion implantation Cambridge studies in modern optics Ions - Implantation ram Matériaux - Propriétés optiques ram Ion implantation Materials Optical properties Optik (DE-588)4043650-0 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Ionenimplantation (DE-588)4027606-5 gnd |
subject_GND | (DE-588)4043650-0 (DE-588)4123887-4 (DE-588)4027606-5 |
title | Optical effects of ion implantation |
title_auth | Optical effects of ion implantation |
title_exact_search | Optical effects of ion implantation |
title_full | Optical effects of ion implantation P. D. Townsend, P. J. Chandler and L. Zhang |
title_fullStr | Optical effects of ion implantation P. D. Townsend, P. J. Chandler and L. Zhang |
title_full_unstemmed | Optical effects of ion implantation P. D. Townsend, P. J. Chandler and L. Zhang |
title_short | Optical effects of ion implantation |
title_sort | optical effects of ion implantation |
topic | Ions - Implantation ram Matériaux - Propriétés optiques ram Ion implantation Materials Optical properties Optik (DE-588)4043650-0 gnd Optische Eigenschaft (DE-588)4123887-4 gnd Ionenimplantation (DE-588)4027606-5 gnd |
topic_facet | Ions - Implantation Matériaux - Propriétés optiques Ion implantation Materials Optical properties Optik Optische Eigenschaft Ionenimplantation |
url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006454720&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV004081392 |
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