High speed electronics and optoelectronics: 26 March 1992, Somerset, New Jersey
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Bellingham, Wash.
SPIE
1992
|
| Schriftenreihe: | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE
1680 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | VII, 177 S. Ill., graph. Darst. |
| ISBN: | 0819408417 |
Internformat
MARC
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| 245 | 1 | 0 | |a High speed electronics and optoelectronics |b 26 March 1992, Somerset, New Jersey |c John E. Bowers ..., eds. |
| 246 | 1 | 3 | |a High-speed electronics and optoelectronics |
| 264 | 1 | |a Bellingham, Wash. |b SPIE |c 1992 | |
| 300 | |a VII, 177 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 490 | 1 | |a Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |v 1680 | |
| 650 | 4 | |a Integrated circuits |x Congresses | |
| 650 | 4 | |a Lasers |x Congresses | |
| 650 | 4 | |a Optoelectronic devices |x Congresses | |
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Datensatz im Suchindex
| _version_ | 1804123930453082112 |
|---|---|
| adam_text | Contents
v
Conference
Committee
vii
Introduction
Session
1
High-Speed Electronics
2
High-speed InP-based HBT integrated circuits (Invited Paper)
[1680-01]
J. F. Jensen, W.
E. Stanchi
na, R. A.
Metzger,
M.
E.
Hafizi,
T.
Liu,
D.
B. Rensen, Hughes Research
Labs.
12
High-performance AIGaAs/CaAs
HBT
1С
technology (Invited
Paper)
[1680-02]
S. J.
Prasad,
В.
Vetanen,
С.
Haynes, S.
Park, I. Beers,
S.
Diamond,
G. A. Pubanz, J. T.
Ebner,
S.
Sanielevici,
A. Ágoston, Tektronix, Inc.
27
Optoelectronic applications of heterojunction bipolar transistor technology: promises and
problems
[1680-03]
L. M. Lunardi, S. Chandrasekhar, AT&T Bell Labs.
33
Low4emperature characterization of high-current-gain AIGaAs/GaAs narrow-base
heterojunction bipolar transistor
[1680-04]
K. Ikossi-Anastasiou, Louisiana State Univ.; A. Ezis, Universal Energy Systems;
Κ. Ε.
Evans,
C. E.
Stutz, Air
Force Wright Lab.
41
Exploratory antimony containing heterojunction bipolar transistors
[1680-05]
K. Ikossi-Anastasiou, Louisiana State Univ.
53
Advanced-power and low-noise
HEMT
devices and MMICs (Invited Paper)
[1680-06]
P.
С
Chao,
P.
M.
Smith,
J. M.
Ballingall, GE Electronics
Lab.
61
Comparison of the noise performance of MODFET s
[1680-07]
B. Hughes, Hewlett-Packard Co.
72
Х
-band
peeled
H EMT
amplifier
[1680-08]
P. G. Young, Univ. of Toledo; R. R. Romanofsky, S. A. Alterovitz, NASA Lewis Research Ctr.;
E. D.
Smith, Univ. of Toledo.
Session
2
High-Speed Lasers
80
Short pulse generation using semiconductor lasers
[1680-10]
Y. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, F. S.
Chao,
W.
Tsang,
M.
A. Chin,
A. M. Sergent,
AT&T Bell Labs.
87
Effects of
carrier transport on relative
intensity
noise and modulation
response in quantum-well
lasers
[1680-11]
R. Nagarajan, M. M. Ishikawa, J. E.
Bowers, Univ. of
California/Santa
Barbara.
(continued)
SPIE
Vol.
1680
High-Speed Electronics and Optoelectronics
(1992)
/in
92
Modulation characteristics
oí
shorwravity strained-layer
lasers
Π
680-12]
L.
F. Lester, S. S. O Keefe, W. J.
Schaff,
L.
F. Eastman,
Cornell Univ.
101
Photonic integrated circuits (Invited Paper)
[1680-13]
U. Koren,
AT&T
Bell Labs.
110
Multiple-quantum-well photonic integrated circuits for pulse generation at i-IOGHz repetition
rates
[1680-19]
P. B.
Hansen,
U. Koren,
С.
Raybon,
В.
1. Miller,
M. C.
Young,
M. Chien, J. Verdie»,
C. A. Burrus,
AT&T Belt Labs.
121
Structure-dependent damping in quantum-well lasers
[1680-14]
W.
С
Rideout, W. F. Sharfm, M. O. VasseH, J. S. LaCourse, R. B.
Lauer,
СТЕ
Labs. Inc.
127
16-CHz GaAs/AlGaAs multiple-quantum-well laser with vertically compact waveguide
Structure
[1680-21]
J. D. Ralston, I. Esquivias, S. Weisser, D. F. Gallagher, P.
j. Tasker, E. C
Larkins, j.
Rosenzweig,
H.
P.
Zappe,
J. Fleissner, D. J.
As, Fraunhofer-Institut für Angewandte Festkörperphysik
(Germany).
Session 3
High-Speed Photodetectors
_______________________
138
Measurement of high-speed
photodiodes
using DFB heterodyne system with microwave
reflectometer (Invited Paper)
[1680-151
D. A. Humphreys, National Physical Lab. (UK).
153
InGaAs MSM photodetectors for long-wavelength fiber communications (Invited Paper)
[1680-20]
}.
B. Soole, Bell Communications Research.
161
Thin film transfer of InAlAs/lnCaAs MSM photodetector or InGaAsP lasers onto GaAs or Si
substrates
[1680-22}
C. Schwartz, S. Xin, W. I. Wang, Columbia Univ.; C. L. Shieh, J. Y.
СЫ, С
A. Anniento,
P. O. Haugsjaa, A. J.
Negri, GTE
Labs. Inc.
169
AIGaSb/GaSb-based metal-semiconductor-metal and p-i-n photodetectors
Π
680-23]
Y.
Wang,
К.
Longenbach,
M.
С.
Teich,
W.
I. Wang, Columbia Univ.;
S.
Tiwari,
M.
С.
Hargis, IBM
Thomas J. Watson Research Ctr.
176
Addendum
177
Author index
iv
/SPIE
Vol.
1680
High-Speed E/ectronics and Optoelectronics
(1992)
|
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| genre_facet | Konferenzschrift 1992 Somerset NJ |
| id | DE-604.BV009589108 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:37:36Z |
| institution | BVB |
| isbn | 0819408417 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006337811 |
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| physical | VII, 177 S. Ill., graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | SPIE |
| record_format | marc |
| series | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| series2 | Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE |
| spelling | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey John E. Bowers ..., eds. High-speed electronics and optoelectronics Bellingham, Wash. SPIE 1992 VII, 177 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1680 Integrated circuits Congresses Lasers Congresses Optoelectronic devices Congresses Optoelektronik (DE-588)4043687-1 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Somerset NJ gnd-content Optoelektronik (DE-588)4043687-1 s DE-604 Bowers, John E. Sonstige oth Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE 1680 (DE-604)BV000010887 1680 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006337811&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey Society of Photo-Optical Instrumentation Engineers: Proceedings of SPIE Integrated circuits Congresses Lasers Congresses Optoelectronic devices Congresses Optoelektronik (DE-588)4043687-1 gnd |
| subject_GND | (DE-588)4043687-1 (DE-588)1071861417 |
| title | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey |
| title_alt | High-speed electronics and optoelectronics |
| title_auth | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey |
| title_exact_search | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey |
| title_full | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey John E. Bowers ..., eds. |
| title_fullStr | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey John E. Bowers ..., eds. |
| title_full_unstemmed | High speed electronics and optoelectronics 26 March 1992, Somerset, New Jersey John E. Bowers ..., eds. |
| title_short | High speed electronics and optoelectronics |
| title_sort | high speed electronics and optoelectronics 26 march 1992 somerset new jersey |
| title_sub | 26 March 1992, Somerset, New Jersey |
| topic | Integrated circuits Congresses Lasers Congresses Optoelectronic devices Congresses Optoelektronik (DE-588)4043687-1 gnd |
| topic_facet | Integrated circuits Congresses Lasers Congresses Optoelectronic devices Congresses Optoelektronik Konferenzschrift 1992 Somerset NJ |
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