MOSFET models for VLSI circuit simulation: theory and practice
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Wien u.a.
Springer
1993
|
Schriftenreihe: | Computational microelectronics
|
Schlagworte: | |
Beschreibung: | XXI, 605 S. graph. Darst. |
ISBN: | 3211823956 0387823956 |
Internformat
MARC
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300 | |a XXI, 605 S. |b graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
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490 | 0 | |a Computational microelectronics | |
650 | 7 | |a Circuits intégrés à très grande échelle - Simulation par ordinateur |2 ram | |
650 | 7 | |a Circuits intégrés à très grande échelle |2 ram | |
650 | 7 | |a MOS (électronique) |2 ram | |
650 | 7 | |a Transistors MOSFET - Modèles mathématiques |2 ram | |
650 | 4 | |a Mathematisches Modell | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Computer simulation | |
650 | 4 | |a Integrated circuits |x Very large scale integration |x Mathematical models | |
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Datensatz im Suchindex
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any_adam_object | |
author | Arora, Narain |
author_facet | Arora, Narain |
author_role | aut |
author_sort | Arora, Narain |
author_variant | n a na |
building | Verbundindex |
bvnumber | BV009570482 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.95 |
callnumber-search | TK7871.95 |
callnumber-sort | TK 47871.95 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_rvk | ST 190 |
classification_tum | ELT 303f |
ctrlnum | (OCoLC)29356565 (DE-599)BVBBV009570482 |
dewey-full | 621.3815/284/011 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284/011 |
dewey-search | 621.3815/284/011 |
dewey-sort | 3621.3815 3284 211 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Informatik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV009570482 |
illustrated | Illustrated |
indexdate | 2024-07-09T17:37:17Z |
institution | BVB |
isbn | 3211823956 0387823956 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006323080 |
oclc_num | 29356565 |
open_access_boolean | |
owner | DE-739 DE-91 DE-BY-TUM DE-634 |
owner_facet | DE-739 DE-91 DE-BY-TUM DE-634 |
physical | XXI, 605 S. graph. Darst. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
publisher | Springer |
record_format | marc |
series2 | Computational microelectronics |
spelling | Arora, Narain Verfasser aut MOSFET models for VLSI circuit simulation theory and practice N. Arora Wien u.a. Springer 1993 XXI, 605 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Computational microelectronics Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf Elektronische Schaltung (DE-588)4113419-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s VLSI (DE-588)4117388-0 s Simulation (DE-588)4055072-2 s Elektronische Schaltung (DE-588)4113419-9 s DE-604 |
spellingShingle | Arora, Narain MOSFET models for VLSI circuit simulation theory and practice Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd Simulation (DE-588)4055072-2 gnd Elektronische Schaltung (DE-588)4113419-9 gnd |
subject_GND | (DE-588)4207266-9 (DE-588)4117388-0 (DE-588)4055072-2 (DE-588)4113419-9 |
title | MOSFET models for VLSI circuit simulation theory and practice |
title_auth | MOSFET models for VLSI circuit simulation theory and practice |
title_exact_search | MOSFET models for VLSI circuit simulation theory and practice |
title_full | MOSFET models for VLSI circuit simulation theory and practice N. Arora |
title_fullStr | MOSFET models for VLSI circuit simulation theory and practice N. Arora |
title_full_unstemmed | MOSFET models for VLSI circuit simulation theory and practice N. Arora |
title_short | MOSFET models for VLSI circuit simulation |
title_sort | mosfet models for vlsi circuit simulation theory and practice |
title_sub | theory and practice |
topic | Circuits intégrés à très grande échelle - Simulation par ordinateur ram Circuits intégrés à très grande échelle ram MOS (électronique) ram Transistors MOSFET - Modèles mathématiques ram Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET (DE-588)4207266-9 gnd VLSI (DE-588)4117388-0 gnd Simulation (DE-588)4055072-2 gnd Elektronische Schaltung (DE-588)4113419-9 gnd |
topic_facet | Circuits intégrés à très grande échelle - Simulation par ordinateur Circuits intégrés à très grande échelle MOS (électronique) Transistors MOSFET - Modèles mathématiques Mathematisches Modell Integrated circuits Very large scale integration Computer simulation Integrated circuits Very large scale integration Mathematical models Metal oxide semiconductor field-effect transistors Mathematical models MOS-FET VLSI Simulation Elektronische Schaltung |
work_keys_str_mv | AT aroranarain mosfetmodelsforvlsicircuitsimulationtheoryandpractice |