Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy:
Saved in:
| Main Author: | |
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| Format: | Thesis Book |
| Language: | English |
| Published: |
1993
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| Subjects: | |
| Physical Description: | 138 S. Ill., graph. Darst. |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV009543557 | ||
| 003 | DE-604 | ||
| 005 | 20010511 | ||
| 007 | t | ||
| 008 | 940420s1993 ad|| m||| 00||| engod | ||
| 035 | |a (OCoLC)46197298 | ||
| 035 | |a (DE-599)BVBBV009543557 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-12 |a DE-11 |a DE-188 | ||
| 084 | |a ELT 280d |2 stub | ||
| 084 | |a FER 786d |2 stub | ||
| 084 | |a ELT 285d |2 stub | ||
| 100 | 1 | |a Wang, Chunlin |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |c Chunlin Wang |
| 264 | 1 | |c 1993 | |
| 300 | |a 138 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Techn. Univ., Diss., 1993 | ||
| 650 | 0 | 7 | |a Einkristall |0 (DE-588)4013901-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silan |0 (DE-588)4337259-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxieschicht |0 (DE-588)4152546-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Plasmaätzen |0 (DE-588)4174821-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Disilan |0 (DE-588)4150150-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a CVD-Verfahren |0 (DE-588)4009846-1 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Plasmaätzen |0 (DE-588)4174821-9 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Einkristall |0 (DE-588)4013901-3 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Epitaxieschicht |0 (DE-588)4152546-2 |D s |
| 689 | 1 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 1 | 2 | |a Disilan |0 (DE-588)4150150-0 |D s |
| 689 | 1 | 3 | |a CVD-Verfahren |0 (DE-588)4009846-1 |D s |
| 689 | 1 | 4 | |a Silan |0 (DE-588)4337259-4 |D s |
| 689 | 1 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006303915 | ||
Record in the Search Index
| _version_ | 1804123883276599296 |
|---|---|
| any_adam_object | |
| author | Wang, Chunlin |
| author_facet | Wang, Chunlin |
| author_role | aut |
| author_sort | Wang, Chunlin |
| author_variant | c w cw |
| building | Verbundindex |
| bvnumber | BV009543557 |
| classification_tum | ELT 280d FER 786d ELT 285d |
| ctrlnum | (OCoLC)46197298 (DE-599)BVBBV009543557 |
| discipline | Elektrotechnik Fertigungstechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01836nam a2200505 c 4500</leader><controlfield tag="001">BV009543557</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20010511 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">940420s1993 ad|| m||| 00||| engod</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)46197298</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV009543557</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-12</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 280d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">FER 786d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 285d</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Chunlin</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy</subfield><subfield code="c">Chunlin Wang</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1993</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">138 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">München, Techn. Univ., Diss., 1993</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Einkristall</subfield><subfield code="0">(DE-588)4013901-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silan</subfield><subfield code="0">(DE-588)4337259-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxieschicht</subfield><subfield code="0">(DE-588)4152546-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Plasmaätzen</subfield><subfield code="0">(DE-588)4174821-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Disilan</subfield><subfield code="0">(DE-588)4150150-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Plasmaätzen</subfield><subfield code="0">(DE-588)4174821-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Einkristall</subfield><subfield code="0">(DE-588)4013901-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Epitaxieschicht</subfield><subfield code="0">(DE-588)4152546-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="2"><subfield code="a">Disilan</subfield><subfield code="0">(DE-588)4150150-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="3"><subfield code="a">CVD-Verfahren</subfield><subfield code="0">(DE-588)4009846-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="4"><subfield code="a">Silan</subfield><subfield code="0">(DE-588)4337259-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006303915</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV009543557 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:36:51Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006303915 |
| oclc_num | 46197298 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-12 DE-11 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-12 DE-11 DE-188 |
| physical | 138 S. Ill., graph. Darst. |
| publishDate | 1993 |
| publishDateSearch | 1993 |
| publishDateSort | 1993 |
| record_format | marc |
| spelling | Wang, Chunlin Verfasser aut Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang 1993 138 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1993 Einkristall (DE-588)4013901-3 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Silan (DE-588)4337259-4 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Plasmaätzen (DE-588)4174821-9 gnd rswk-swf Disilan (DE-588)4150150-0 gnd rswk-swf CVD-Verfahren (DE-588)4009846-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Plasmaätzen (DE-588)4174821-9 s Silicium (DE-588)4077445-4 s Einkristall (DE-588)4013901-3 s DE-604 Epitaxieschicht (DE-588)4152546-2 s Disilan (DE-588)4150150-0 s CVD-Verfahren (DE-588)4009846-1 s Silan (DE-588)4337259-4 s |
| spellingShingle | Wang, Chunlin Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Einkristall (DE-588)4013901-3 gnd Silicium (DE-588)4077445-4 gnd Silan (DE-588)4337259-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Plasmaätzen (DE-588)4174821-9 gnd Disilan (DE-588)4150150-0 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| subject_GND | (DE-588)4013901-3 (DE-588)4077445-4 (DE-588)4337259-4 (DE-588)4152546-2 (DE-588)4174821-9 (DE-588)4150150-0 (DE-588)4009846-1 (DE-588)4113937-9 |
| title | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_auth | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_exact_search | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_full | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_fullStr | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_full_unstemmed | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy Chunlin Wang |
| title_short | Etching of single crystalline silicon by hydrogen plasma and silicon deposition from Si 2 H 6 and SiH 4 for low temperature silicon epitaxy |
| title_sort | etching of single crystalline silicon by hydrogen plasma and silicon deposition from si 2 h 6 and sih 4 for low temperature silicon epitaxy |
| topic | Einkristall (DE-588)4013901-3 gnd Silicium (DE-588)4077445-4 gnd Silan (DE-588)4337259-4 gnd Epitaxieschicht (DE-588)4152546-2 gnd Plasmaätzen (DE-588)4174821-9 gnd Disilan (DE-588)4150150-0 gnd CVD-Verfahren (DE-588)4009846-1 gnd |
| topic_facet | Einkristall Silicium Silan Epitaxieschicht Plasmaätzen Disilan CVD-Verfahren Hochschulschrift |
| work_keys_str_mv | AT wangchunlin etchingofsinglecrystallinesiliconbyhydrogenplasmaandsilicondepositionfromsi2h6andsih4forlowtemperaturesiliconepitaxy |